As a promising ultra-wide bandgap semiconductor, gallium oxide(Ga_2O_3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field(8 MV/cm), ultra-wide bandgap(～ 4.8 eV) and l...As a promising ultra-wide bandgap semiconductor, gallium oxide(Ga_2O_3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field(8 MV/cm), ultra-wide bandgap(～ 4.8 eV) and large Baliga's figure of merit(BFOM) of Ga_2O_3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor(FET). In this paper, we introduce the basic physical properties of Ga_2O_3 single crystal, and review the recent research process of Ga_2O_3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga_2O_3 is preliminary revealed. Finally, the prospect of the Ga_2O_3 based FET for power electronics application is analyzed.展开更多
Intrinsic fi-Ga203 and Zn-doped β-Ga203 films were prepared using RF magnetron sputtering. The effects of the Zn doping and thermal annealing on the structural and optical properties are investigated. In compar- ison...Intrinsic fi-Ga203 and Zn-doped β-Ga203 films were prepared using RF magnetron sputtering. The effects of the Zn doping and thermal annealing on the structural and optical properties are investigated. In compar- ison with the intrinsic β-Ga203 films, the microstructure, optical transmittance, optical absorption, optical energy gap, and photoluminescence ofZn-doped β-Ga203 films change significantly. The post-annealed β-Ga203 films are polycrystalline. After Zn doping, the crystallization deteriorates, the optical band gap shrinks, the transmittance decreases and the UV, blue, and green emission bands are enhanced.展开更多
Cu and Cu/ITO films were prepared on polyethylene terephthalate （PET） substrates with a Ga2O3 buffer layer using radio frequency （RF） and direct current （DC） magnetron sputtering. The effect of Cu layer thicknes...Cu and Cu/ITO films were prepared on polyethylene terephthalate （PET） substrates with a Ga2O3 buffer layer using radio frequency （RF） and direct current （DC） magnetron sputtering. The effect of Cu layer thickness on the optical and electrical properties of the Cu film deposited on a PET substrate with a Ga2O3 buffer layer was studied, and an appropriate Cu layer thickness of 4.2 nm was obtained. Changes in the optoelectrical properties of Cu（4.2 nm）/ITO（30 nm） films were investigated with respect to the Ga2O3 buffer layer thickness. The optical and electrical properties of the Cu/ITO films were significantly influenced by the thickness of the Ga2O3 buffer layer. A maximum transmission of 86%, sheet resistance of 45 Ω/□ and figure of merit of 3.96 × 10^-3 Ω^ -1 were achieved for Cu（4.2 nm）/ITO（30 nm） films with a Ga2O3 layer thickness of 15 nm.展开更多
基金supported by the National Natural Science Foundation of China(Nos.61521064,61522408,61574169,6 1334007,61474136,61574166)the Ministry of Science andTechnology of China(Nos.2016YFA0201803,2016YFA0203800,2017YFB0405603)+2 种基金the Key Research Program of Frontier Sciences of Chinese Academy of Sciences(Nos.QYZDB-SSWJSC048,QYZDY-SSW-JSC001)the Beijing Municipal Science and Technology Project(No.Z171100002017011)the Opening Project of the Key Laboratory of Microelectronic Devices&Integration Technology,Institute of Microelectronics of Chinese Academy of Sciences
文摘As a promising ultra-wide bandgap semiconductor, gallium oxide(Ga_2O_3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field(8 MV/cm), ultra-wide bandgap(～ 4.8 eV) and large Baliga's figure of merit(BFOM) of Ga_2O_3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor(FET). In this paper, we introduce the basic physical properties of Ga_2O_3 single crystal, and review the recent research process of Ga_2O_3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga_2O_3 is preliminary revealed. Finally, the prospect of the Ga_2O_3 based FET for power electronics application is analyzed.
基金supported by the National Natural Science Foundation of China(No.10974077)the Natural Science Foundation of Shandong Province,China(No.2009ZRB01702)the Shandong Province Higher Educational Science andTechnology Program,China(No. J10LA08)
文摘Intrinsic fi-Ga203 and Zn-doped β-Ga203 films were prepared using RF magnetron sputtering. The effects of the Zn doping and thermal annealing on the structural and optical properties are investigated. In compar- ison with the intrinsic β-Ga203 films, the microstructure, optical transmittance, optical absorption, optical energy gap, and photoluminescence ofZn-doped β-Ga203 films change significantly. The post-annealed β-Ga203 films are polycrystalline. After Zn doping, the crystallization deteriorates, the optical band gap shrinks, the transmittance decreases and the UV, blue, and green emission bands are enhanced.
基金supported by the National Natural Science Foundation of China(No.10974077)the National Science Foundation of Shandong Province,China(No.2009ZRB01702)the Shandong Province Higher Educational Science and Technology Program,China(No.J10LA08)
文摘Cu and Cu/ITO films were prepared on polyethylene terephthalate （PET） substrates with a Ga2O3 buffer layer using radio frequency （RF） and direct current （DC） magnetron sputtering. The effect of Cu layer thickness on the optical and electrical properties of the Cu film deposited on a PET substrate with a Ga2O3 buffer layer was studied, and an appropriate Cu layer thickness of 4.2 nm was obtained. Changes in the optoelectrical properties of Cu（4.2 nm）/ITO（30 nm） films were investigated with respect to the Ga2O3 buffer layer thickness. The optical and electrical properties of the Cu/ITO films were significantly influenced by the thickness of the Ga2O3 buffer layer. A maximum transmission of 86%, sheet resistance of 45 Ω/□ and figure of merit of 3.96 × 10^-3 Ω^ -1 were achieved for Cu（4.2 nm）/ITO（30 nm） films with a Ga2O3 layer thickness of 15 nm.
