To guide the illuminating design to improve the on-state performances of gallium arsenide(GaAs)photoconductive semiconductor switch(PCSS),the effect of spot size on the operation mode of GaAsPCSS based on a semi-insul...To guide the illuminating design to improve the on-state performances of gallium arsenide(GaAs)photoconductive semiconductor switch(PCSS),the effect of spot size on the operation mode of GaAsPCSS based on a semi-insulating wafer with a thickness of 1 mm,triggered by a 1064-nm extrinsic laser beam with the rectangular spot,has been investigated experimentally.It is found that the variation of the spot size in length and width can act on the different parts of the output waveform integrating the characteristics of the linear and nonlinear modes,and then significantly boosts the PCSS toward different operation modes.On this basis,a two-channel model containing the active and passive parts is introduced to interpret the relevant influencing mechanisms.Results indicate that the increased spot length can peak the amplitude of static domains in the active part to enhance the development of the nonlinear switching,while the extended spot width can change the distribution of photogenerated carriers on both parts to facilitate the linear switching and weaken the nonlinear switching,which have been proved by comparing the domain evolutions under different spot sizes.展开更多
In this article,the bunched transport of photoexcited carriers in a GaAs photoconductive semiconductor switch(PCSS)with interdigitated electrodes is investigated under femtosecond laser excitation.Continuous outputs f...In this article,the bunched transport of photoexcited carriers in a GaAs photoconductive semiconductor switch(PCSS)with interdigitated electrodes is investigated under femtosecond laser excitation.Continuous outputs featuring high gain are obtained for single shots and at 1 kHz by varying the optical excitation energy.An ensemble three-valley Monte Carlo simulation is utilized to investigate the transient characteristics and the dynamic process of photoexcited carriers.It demonstrates that the presence of a plasma channel can be attributed to the bunching of high-density electron–hole pairs,which are transported in the form of a highdensity filamentary current.The results provide a picture of the evolution of photoexcited carriers during transient switching.A photoinduced heat effect is analyzed,which reveals the related failure mechanism of GaAs PCSS at various repetition rates.展开更多
基金supported in part by the Huxiang Youth Talent Support Program(No.2020RC3030)in part by the Foundation of State Key Laboratory of Pulsed Power Laser Technology(Nos.SKL2021ZR02 and SKL2021KF05)。
文摘To guide the illuminating design to improve the on-state performances of gallium arsenide(GaAs)photoconductive semiconductor switch(PCSS),the effect of spot size on the operation mode of GaAsPCSS based on a semi-insulating wafer with a thickness of 1 mm,triggered by a 1064-nm extrinsic laser beam with the rectangular spot,has been investigated experimentally.It is found that the variation of the spot size in length and width can act on the different parts of the output waveform integrating the characteristics of the linear and nonlinear modes,and then significantly boosts the PCSS toward different operation modes.On this basis,a two-channel model containing the active and passive parts is introduced to interpret the relevant influencing mechanisms.Results indicate that the increased spot length can peak the amplitude of static domains in the active part to enhance the development of the nonlinear switching,while the extended spot width can change the distribution of photogenerated carriers on both parts to facilitate the linear switching and weaken the nonlinear switching,which have been proved by comparing the domain evolutions under different spot sizes.
基金supported in part by National Natural Science Foundation of China(Nos.51877177 and 52007152)in part by the Scientific Research Program Funded by Shaanxi Provincial Education Department(Nos.21JP085 and 21JP088)+3 种基金the Youth Innovation Team of Shaanxi Universitiesin part by the Natural Science Basic Research Plan of Shaanxi Province(Nos.2021JZ-48 and 2020JM-462)in part by Fellowship of China Postdoctoral Science Foundation(No.2021M702639)in part by Open Research Fund of State Key Laboratory of Pulsed Power Laser Technology(No.SKL2020KF01)。
文摘In this article,the bunched transport of photoexcited carriers in a GaAs photoconductive semiconductor switch(PCSS)with interdigitated electrodes is investigated under femtosecond laser excitation.Continuous outputs featuring high gain are obtained for single shots and at 1 kHz by varying the optical excitation energy.An ensemble three-valley Monte Carlo simulation is utilized to investigate the transient characteristics and the dynamic process of photoexcited carriers.It demonstrates that the presence of a plasma channel can be attributed to the bunching of high-density electron–hole pairs,which are transported in the form of a highdensity filamentary current.The results provide a picture of the evolution of photoexcited carriers during transient switching.A photoinduced heat effect is analyzed,which reveals the related failure mechanism of GaAs PCSS at various repetition rates.
