用分子束外延 (MBE)设备制备了 Ga As/ Al As和 Ga As/ Si/ Al As异质结 ,通过 XPS分别研究了异质结界面处 Si层厚度为 0 .5 ML 和 1ML 对异质结带阶的调节 ,得到最大调节量为 0 .2 e V;通过 C- V法研究了异质结的Ga As层在不同温度下...用分子束外延 (MBE)设备制备了 Ga As/ Al As和 Ga As/ Si/ Al As异质结 ,通过 XPS分别研究了异质结界面处 Si层厚度为 0 .5 ML 和 1ML 对异质结带阶的调节 ,得到最大调节量为 0 .2 e V;通过 C- V法研究了异质结的Ga As层在不同温度下生长对 0 .5 ML Si夹层的影响 ,得到 Si夹层的空间分布随 Ga As层生长温度的升高而扩散增强的温度效应 ,通过深能级瞬态谱 (DL TS)研究了在上述不同温度下生长的 Ga As层的晶体质量 .展开更多
To explain different doping effects in a buffer layer,thermally annealed interface,and upper epilayers of GaAs/Si films grown by Metalorganic Chemical Vapor Deposition(MOCVD),the behaviors of unintentional doping in G...To explain different doping effects in a buffer layer,thermally annealed interface,and upper epilayers of GaAs/Si films grown by Metalorganic Chemical Vapor Deposition(MOCVD),the behaviors of unintentional doping in GaAs/Si films are investigated in detail.A third doping mechanism of arsine impurity incorporation during the growth process of GaAs/Si films,apart from conventional mechanisms of gas phase reaction and diffusion from the silicon substrate,is proposed.The experimental results reveal that the doping behavior in the buffer layer studied is determined by the three types of doping mechanisms together.However in the thermally annealed interface and upper epilayers,the third doping mechanism is dominant.According to the third mechanism,the background carrier concentration in GaAs/Si films grown by MOCVD could be properly controlled through the arsine flow rate.展开更多
文摘用分子束外延 (MBE)设备制备了 Ga As/ Al As和 Ga As/ Si/ Al As异质结 ,通过 XPS分别研究了异质结界面处 Si层厚度为 0 .5 ML 和 1ML 对异质结带阶的调节 ,得到最大调节量为 0 .2 e V;通过 C- V法研究了异质结的Ga As层在不同温度下生长对 0 .5 ML Si夹层的影响 ,得到 Si夹层的空间分布随 Ga As层生长温度的升高而扩散增强的温度效应 ,通过深能级瞬态谱 (DL TS)研究了在上述不同温度下生长的 Ga As层的晶体质量 .
基金Supported by the Fundamental Research Funds for the Central University under Grant No 2013RC1205the National Basic Research Program of China under Grant No 2010CB327602。
文摘To explain different doping effects in a buffer layer,thermally annealed interface,and upper epilayers of GaAs/Si films grown by Metalorganic Chemical Vapor Deposition(MOCVD),the behaviors of unintentional doping in GaAs/Si films are investigated in detail.A third doping mechanism of arsine impurity incorporation during the growth process of GaAs/Si films,apart from conventional mechanisms of gas phase reaction and diffusion from the silicon substrate,is proposed.The experimental results reveal that the doping behavior in the buffer layer studied is determined by the three types of doping mechanisms together.However in the thermally annealed interface and upper epilayers,the third doping mechanism is dominant.According to the third mechanism,the background carrier concentration in GaAs/Si films grown by MOCVD could be properly controlled through the arsine flow rate.
