GaInNAs/GaAs single-quantum-well(SQW)lasers have been grown by solid-source molecular beam epitaxy.N is introduced by a home-made dc-active plasma source.Incorporation of N into InGaAs decreases the bandgap significan...GaInNAs/GaAs single-quantum-well(SQW)lasers have been grown by solid-source molecular beam epitaxy.N is introduced by a home-made dc-active plasma source.Incorporation of N into InGaAs decreases the bandgap significantly.The highest N concentration of 2.6%in GaInNAs/GaAs QW is obtained,corresponding to the photoluminescence(PL)peak wavelength of 1.57μm at 10 K.The PL peak intensity decreases rapidly and the PL full width at half maximum increases with the increasing N concentrations.Rapid thermal annealing at 850℃ could significantly improve the crystal quality of the QWs.An optimum annealing time of 5s at 850℃ was obtained.The GaInNAs/GaAs SQW laser emitting at 1.2μm exhibits a high characteristic temperature of 115 K in the temperature range of 20℃-75℃.展开更多
Material growth and device fabrication of the first 1.3μm quantum well （QW） edge emitting laser diodes in China are reported. Through the optimization of the molecular beam epitaxy （MBE） growth conditions and the...Material growth and device fabrication of the first 1.3μm quantum well （QW） edge emitting laser diodes in China are reported. Through the optimization of the molecular beam epitaxy （MBE） growth conditions and the tuning of the indium and nitrogen composition of the GalnNAs QWs, the emission wavelengths of the QWs can be tuned to 1.3μm. Ridge geometry waveguide laser diodes are fabricated. The lasing wavelength is 1.3μm under continuous current injection at room temperature with threshold current of 1kA/cm^2 for the laser diode structures with the cleaved facet mirrors. The output light power over 30mW is obtained.展开更多
The effects of Rapid Thermal Annealing (RTA) on the optical properties of GaInNAs/GaAs Single Quantum Well (SQW) grown by plasma assisted molecular beam epitaxy are investigated. Ion removal magnets were applied to re...The effects of Rapid Thermal Annealing (RTA) on the optical properties of GaInNAs/GaAs Single Quantum Well (SQW) grown by plasma assisted molecular beam epitaxy are investigated. Ion removal magnets were applied to reduce the ion damage during the growth process and the optical properties of GaInNAs/GaAs SQW are remarkably improved. RTA was carried out at 650℃ and its effect was studied by the comparising the room\|temperature PhotoLuminescence (PL) spectra for the non ion removed (grown without magnets) sample with for the ion removed (grown with magnets) one. The more significant improvement of PL characteristics for non ion removed GaInNAs/GaAs SQW after annealing (compared with those for ion removed) indicates that the nonradiative centers removed by RTA at 650℃ are mainly originated from ion damage. After annealing the PL blue shift for non ion removed GaInNAs/GaAs SQW is much larger than those for InGaAs/GaAs and ion removed GaInNAs/GaAs SQW. It is found that the larger PL blue shift of GaInNAs/GaAs SQW is due to the defect assisted In Ga interdiffusion rather than defect assisted N As interdiffusion.展开更多
GaAs-based nanomaterials are essential for near-infrared nano-photoelectronic devices due to their exceptional optoelectronic properties.However,as the dimensions of GaAs materials decrease,the development of GaAs nan...GaAs-based nanomaterials are essential for near-infrared nano-photoelectronic devices due to their exceptional optoelectronic properties.However,as the dimensions of GaAs materials decrease,the development of GaAs nanowires(NWs)is hindered by type-Ⅱquantum well structures arising from the mixture of zinc blende(ZB)and wurtzite(WZ)phases and surface defects due to the large surface-to-volume ratio.Achieving GaAs-based NWs with high emission efficiency has become a key research focus.In this study,pre-etched silicon substrates were combined with GaAs/AlGaAs core-shell heterostructure to achieve GaAs-based NWs with good perpendicularity,excellent crystal structures,and high emission efficiency by leveraging the shadowing effect and surface passivation.The primary evidence for this includes the prominent free-exciton emission in the variable-temperature spectra and the low thermal activation energy indicated by the variable-power spectra.The findings of this study suggest that the growth method described herein can be employed to enhance the crystal structure and optical properties of otherⅢ-Ⅴlow-dimensional materials,potentially paving the way for future NW devices.展开更多
基金Supported by the Major State Basic Research Program under Grant No.G2000036603the National Natural Science Foundation of China under Grant Nos.69896260 and 69988005.
文摘GaInNAs/GaAs single-quantum-well(SQW)lasers have been grown by solid-source molecular beam epitaxy.N is introduced by a home-made dc-active plasma source.Incorporation of N into InGaAs decreases the bandgap significantly.The highest N concentration of 2.6%in GaInNAs/GaAs QW is obtained,corresponding to the photoluminescence(PL)peak wavelength of 1.57μm at 10 K.The PL peak intensity decreases rapidly and the PL full width at half maximum increases with the increasing N concentrations.Rapid thermal annealing at 850℃ could significantly improve the crystal quality of the QWs.An optimum annealing time of 5s at 850℃ was obtained.The GaInNAs/GaAs SQW laser emitting at 1.2μm exhibits a high characteristic temperature of 115 K in the temperature range of 20℃-75℃.
文摘Material growth and device fabrication of the first 1.3μm quantum well （QW） edge emitting laser diodes in China are reported. Through the optimization of the molecular beam epitaxy （MBE） growth conditions and the tuning of the indium and nitrogen composition of the GalnNAs QWs, the emission wavelengths of the QWs can be tuned to 1.3μm. Ridge geometry waveguide laser diodes are fabricated. The lasing wavelength is 1.3μm under continuous current injection at room temperature with threshold current of 1kA/cm^2 for the laser diode structures with the cleaved facet mirrors. The output light power over 30mW is obtained.
基金Project Supported by Major State Basic Research Program Under Grant No.G2 0 0 0 0 3 660 3 and by National NaturalScience Found
文摘The effects of Rapid Thermal Annealing (RTA) on the optical properties of GaInNAs/GaAs Single Quantum Well (SQW) grown by plasma assisted molecular beam epitaxy are investigated. Ion removal magnets were applied to reduce the ion damage during the growth process and the optical properties of GaInNAs/GaAs SQW are remarkably improved. RTA was carried out at 650℃ and its effect was studied by the comparising the room\|temperature PhotoLuminescence (PL) spectra for the non ion removed (grown without magnets) sample with for the ion removed (grown with magnets) one. The more significant improvement of PL characteristics for non ion removed GaInNAs/GaAs SQW after annealing (compared with those for ion removed) indicates that the nonradiative centers removed by RTA at 650℃ are mainly originated from ion damage. After annealing the PL blue shift for non ion removed GaInNAs/GaAs SQW is much larger than those for InGaAs/GaAs and ion removed GaInNAs/GaAs SQW. It is found that the larger PL blue shift of GaInNAs/GaAs SQW is due to the defect assisted In Ga interdiffusion rather than defect assisted N As interdiffusion.
文摘GaAs-based nanomaterials are essential for near-infrared nano-photoelectronic devices due to their exceptional optoelectronic properties.However,as the dimensions of GaAs materials decrease,the development of GaAs nanowires(NWs)is hindered by type-Ⅱquantum well structures arising from the mixture of zinc blende(ZB)and wurtzite(WZ)phases and surface defects due to the large surface-to-volume ratio.Achieving GaAs-based NWs with high emission efficiency has become a key research focus.In this study,pre-etched silicon substrates were combined with GaAs/AlGaAs core-shell heterostructure to achieve GaAs-based NWs with good perpendicularity,excellent crystal structures,and high emission efficiency by leveraging the shadowing effect and surface passivation.The primary evidence for this includes the prominent free-exciton emission in the variable-temperature spectra and the low thermal activation energy indicated by the variable-power spectra.The findings of this study suggest that the growth method described herein can be employed to enhance the crystal structure and optical properties of otherⅢ-Ⅴlow-dimensional materials,potentially paving the way for future NW devices.
