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1.3 GHz 9-cell高性能超导腔高阶模耦合器电磁及热分析研究
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作者 王子晗 潘卫民 +5 位作者 米正辉 翟纪元 贺斐思 沙鹏 王光伟 刘铭 《强激光与粒子束》 CAS CSCD 北大核心 2024年第7期62-68,共7页
中国科学院高能物理研究所于2023年6月完成了高品质因数1.3 GHz超导加速模组研发,在国际上率先实现了中温退火高品质因数超导腔模组技术路线。模组中集成了八只经过中温退火工艺处理的1.3 GHz9-cell超导腔,在模组的测试过程中超导腔的... 中国科学院高能物理研究所于2023年6月完成了高品质因数1.3 GHz超导加速模组研发,在国际上率先实现了中温退火高品质因数超导腔模组技术路线。模组中集成了八只经过中温退火工艺处理的1.3 GHz9-cell超导腔,在模组的测试过程中超导腔的高阶模耦合器温升异常,导致超导腔无法在高梯度下稳定工作。通过HFSS软件和CST软件中的微波仿真模块对高阶模耦合器进行电磁分析,再通过理论和Ansys Workbench软件对高阶模耦合器进行热仿真分析,并结合模组的高功率实验,找到了超导腔性能异常的原因,并对超导腔高阶模耦合器的冷却方式进行了进一步的优化,解决了模组中超导腔高梯度下的不稳定性。 展开更多
关键词 1.3 GHz 9-cell超导腔 高阶模耦合器 电磁分析 稳态热分析
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Insufficient TRPM5 Mediates Lipotoxicity-induced Pancreaticβ-cell Dysfunction
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作者 Kai-yuan WANG Shi-mei WU +2 位作者 Zheng-jian YAO Yun-xia ZHU Xiao HAN 《Current Medical Science》 SCIE CAS 2024年第2期346-354,共9页
Objective:While the reduction of transient receptor potential channel subfamily M member 5(TRPM5)has been reported in islet cells from type 2 diabetic(T2D)mouse models,its role in lipotoxicity-induced pancreaticβ-cel... Objective:While the reduction of transient receptor potential channel subfamily M member 5(TRPM5)has been reported in islet cells from type 2 diabetic(T2D)mouse models,its role in lipotoxicity-induced pancreaticβ-cell dysfunction remains unclear.This study aims to study its role.Methods:Pancreas slices were prepared from mice subjected to a high-fat-diet(HFD)at different time points,and TRPM5 expression in the pancreaticβcells was examined using immunofluorescence staining.Glucose-stimulated insulin secretion(GSIS)defects caused by lipotoxicity were mimicked by saturated fatty acid palmitate(Palm).Primary mouse islets and mouse insulinoma MIN6 cells were treated with Palm,and the TRPM5 expression was detected using qRT-PCR and Western blotting.Palm-induced GSIS defects were measured following siRNA-based Trpm5 knockdown.The detrimental effects of Palm on primary mouse islets were also assessed after overexpressing Trpm5 via an adenovirus-derived Trpm5(Ad-Trpm5).Results:HFD feeding decreased the mRNA levels and protein expression of TRPM5 in mouse pancreatic islets.Palm reduced TRPM5 protein expression in a time-and dose-dependent manner in MIN6 cells.Palm also inhibited TRPM5 expression in primary mouse islets.Knockdown of Trpm5 inhibited insulin secretion upon high glucose stimulation but had little effect on insulin biosynthesis.Overexpression of Trpm5 reversed Palm-induced GSIS defects and the production of functional maturation molecules unique toβcells.Conclusion:Our findings suggest that lipotoxicity inhibits TRPM5 expression in pancreaticβcells both in vivo and in vitro and,in turn,drivesβ-cell dysfunction. 展开更多
关键词 type 2 diabetes β-cell dysfunction LIPOTOXICITY TRPM5
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Upregulation of α-ENaC induces pancreatic β-cell dysfunction,ER stress,and SIRT2 degradation
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作者 Xue Zhang Dan Zhang +7 位作者 Lei Huo Xin Zhou Jia Zhang Min Li Dongming Su Peng Sun Fang Chen Xiubin Liang 《Journal of Biomedical Research》 CAS CSCD 2024年第3期241-255,共15页
Islet beta cells(β-cells)produce insulin in response to high blood glucose levels,which is essential for preserving glucose homeostasis.Voltage-gated ion channels inβ-cells,including Na+,K+,and Ca2+channels,aid in t... Islet beta cells(β-cells)produce insulin in response to high blood glucose levels,which is essential for preserving glucose homeostasis.Voltage-gated ion channels inβ-cells,including Na+,K+,and Ca2+channels,aid in the release of insulin.The epithelial sodium channel alpha subunit(α-ENaC),a voltage-independent sodium ion channel,is also expressed in human pancreatic endocrine cells.However,there is no reported study on the function of ENaC in theβ-cells.In the current study,we found thatα-ENaC was expressed in human pancreatic glandule and pancreatic isletβ-cells.In the pancreas of db/db mice and high-fat diet-induced mice,and in mouse isletβ-cells(MIN6 cells)treated with palmitate,α-ENaC expression was increased.Whenα-ENaC was overexpressed in MIN6 cells,insulin content and glucose-induced insulin secretion were significantly reduced.On the other hand,palmitate injured isletβ-cells and suppressed insulin synthesis and secretion,but increasedα-ENaC expression in MIN6 cells.However,α-ENaC knockout(Scnn1a−/−)in MIN6 cells attenuatedβ-cell disorder induced by palmitate.Furthermore,α-ENaC regulated the ubiquitylation and degradation of sirtuin 2 inβ-cells.α-ENaC also modulatedβ-cell function in correlation with the inositol-requiring enzyme 1 alpha/X-box binding protein 1(IRE1α/XBP1)and protein kinase RNA-like endoplasmic reticulum kinase/C/EBP homologous protein(PERK/CHOP)endoplasmic reticulum stress pathways.These results suggest thatα-ENaC may play a novel role in insulin synthesis and secretion in theβ-cells,and the upregulation ofα-ENaC promotes isletβ-cell dysfunction.In conclusion,α-ENaC may be a key regulator involved in isletβ-cell damage and a potential therapeutic target for type 2 diabetes mellitus. 展开更多
关键词 α-ENaC pancreaticβ-cells type 2 diabetes mellitus endoplasmic reticulum stress sirtuin 2
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The Effect of Tuberculosis Infection on Pancreatic Beta-Cell Function in Patients with Type 2 Diabetes Mellitus
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作者 Mengdan Kong Ailin Zhong +1 位作者 Shilin Qu Junli Xue 《Advances in Bioscience and Biotechnology》 CAS 2024年第2期129-139,共11页
Objective: The aim of this study is to investigate how individuals with type 2 diabetes mellitus’ pancreatic β-cell function index and insulin resistance index are affected by tuberculosis infection. Methods: The st... Objective: The aim of this study is to investigate how individuals with type 2 diabetes mellitus’ pancreatic β-cell function index and insulin resistance index are affected by tuberculosis infection. Methods: The study group consisted of 89 patients with type 2 diabetes mellitus and tuberculosis infection who were admitted to Jingzhou Chest Hospital between March 2019 and March 2021. Gender and duration of diabetes were matching conditions. The control group was made up of 89 patients with type 2 diabetes who were admitted to Jingzhou Central Hospital’s endocrinology department during the same period. The two patient groups provided general information such as gender, age, length of diabetes, and blood biochemical indexes such as glycosylated hemoglobin (HbA1c), fasting glucose (FPG), and fasting C-peptide (FC-P). The HOMA calculator was used to calculate the HOMA-β and the HOMA-IR, and intergroup comparisons and correlation analyses were carried out. Results: Regarding gender, age, disease duration, FC-P, and HbA1c, the differences between the two groups were not statistically significant (P > 0.05). However, BMI, FPG, HOMA-β, and HOMA-IR showed statistically significant differences (P < 0.05). In comparison to the control group, the study group’s HOMA-β was lower and its HOMA-IR was greater. According to Spearman’s correlation analysis, HOMA-β had a negative association (P th FPG, HbA1c, and the length of the disease, and a positive correlation with BMI and FC-P. A positive correlation was found between HOMA-IR and BMI, FPG, and FC-P (P < 0.01), as well as a correlation with the length of the disease (P > 0.05) and HbA1c. Conclusions: In type 2 diabetes mellitus combined with tuberculosis infection, the patients had higher FPG levels and lower FC-P levels, the secretory function of pancreatic β-cells was more severely impaired, and insulin resistance was more obvious. 展开更多
关键词 Tuberculosis Infection Type 2 Diabetes Mellitus Pancreatic β-cell Function Insulin Resistance
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GaInP/GaAs/Ge三结太阳电池100 MeV质子位移辐照损伤效应实验研究
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作者 王祖军 尹利元 +7 位作者 王兴鸿 张琦 唐宁 郭晓强 盛江坤 缑石龙 晏石兴 李传洲 《原子能科学技术》 EI CAS CSCD 北大核心 2023年第12期2348-2356,共9页
GaInP/GaAs/Ge三结太阳电池是当前航天器空间电源系统的核心元器件,其在空间辐射环境中遭受的辐照损伤会导致太阳电池性能参数衰降,甚至导致航天器供电系统功能失效。为获取GaInP/GaAs/Ge三结太阳电池高能质子辐照损伤退化规律,以国产Ga... GaInP/GaAs/Ge三结太阳电池是当前航天器空间电源系统的核心元器件,其在空间辐射环境中遭受的辐照损伤会导致太阳电池性能参数衰降,甚至导致航天器供电系统功能失效。为获取GaInP/GaAs/Ge三结太阳电池高能质子辐照损伤退化规律,以国产GaInP/GaAs/Ge三结太阳电池为研究对象,通过开展100 MeV质子不同注量下的辐照实验,分析质子位移损伤诱发GaInP/GaAs/Ge三结太阳电池的开路电压(V_(oc))、短路电流(I_(sc))、最大输出功率(P_(m))、光电转换效率(E_(ff))等辐射敏感参数的退化规律和损伤机理。结果表明:注量范围为1×10^(11)~2×10^(12)cm^(-2)时,V_(oc)、I_(sc)、P_(m)、E_(ff)的退化程度随辐照注量的增加而增大,当注量为2×10^(12)cm^(-2)时,P_(m)和E_(ff)归一化处理后的退化程度均为16.88%,与V_(oc)和I_(sc)相比,衰减更严重。对不同注量辐照所得V_(oc)、I_(sc)、P_(m)、E_(ff)进行拟合,获得了V_(oc)、I_(sc)、P_(m)、E_(ff)随辐照注量变化的特征曲线,根据该曲线可预估GaInP/GaAs/Ge三结太阳电池不同注量下性能的衰减幅度。 展开更多
关键词 gainp/GaAs/Ge三结太阳电池 质子辐照 位移损伤 辐射敏感参数
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Pancreaticβ-cell dysfunction in type 2 diabetes:Implications of inflammation and oxidative stress 被引量:2
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作者 Phiwayinkosi V Dludla Sihle E Mabhida +6 位作者 Khanyisani Ziqubu Bongani B Nkambule Sithandiwe E Mazibuko-Mbeje Sidney Hanser Albert Kotze Basson Carmen Pheiffer Andre Pascal Kengne 《World Journal of Diabetes》 SCIE 2023年第3期130-146,共17页
Insulin resistance and pancreaticβ-cell dysfunction are major pathological mechanisms implicated in the development and progression of type 2 diabetes(T2D).Beyond the detrimental effects of insulin resistance,inflamm... Insulin resistance and pancreaticβ-cell dysfunction are major pathological mechanisms implicated in the development and progression of type 2 diabetes(T2D).Beyond the detrimental effects of insulin resistance,inflammation and oxidative stress have emerged as critical features of T2D that defineβ-cell dysfunction.Predominant markers of inflammation such as C-reactive protein,tumor necrosis factor alpha,and interleukin-1βare consistently associated withβ-cell failure in preclinical models and in people with T2D.Similarly,important markers of oxidative stress,such as increased reactive oxygen species and depleted intracellular antioxidants,are consistent with pancreaticβ-cell damage in conditions of T2D.Such effects illustrate a pathological relationship between an abnormal inflammatory response and generation of oxidative stress during the progression of T2D.The current review explores preclinical and clinical research on the pathological implications of inflammation and oxidative stress during the development ofβ-cell dysfunction in T2D.Moreover,important molecular mechanisms and relevant biomarkers involved in this process are discussed to divulge a pathological link between inflammation and oxidative stress duringβ-cell failure in T2D.Underpinning the clinical relevance of the review,a systematic analysis of evidence from randomized controlled trials is covered,on the potential therapeutic effects of some commonly used antidiabetic agents in modulating inflammatory makers to improveβ-cell function. 展开更多
关键词 Type 2 diabetes Insulin resistance β-cell dysfunction INFLAMMATION Oxidative stress
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Association of point in range withβ-cell function and insulin sensitivity of type 2 diabetes mellitus in cold areas
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作者 Yanan Ni Dan Liu +1 位作者 Xiaona Zhang Hong Qiao 《Frigid Zone Medicine》 2023年第4期242-252,I0014,共12页
Background and Objective:Self-monitoring of blood glucose(SMBG)is crucial for achieving a glycemic target and upholding blood glucose stability,both of which are the primary purpose of anti-diabetic treatments.However... Background and Objective:Self-monitoring of blood glucose(SMBG)is crucial for achieving a glycemic target and upholding blood glucose stability,both of which are the primary purpose of anti-diabetic treatments.However,the association between time in range(TIR),as assessed by SMBG,andβ-cell insulin secretion as well as insulin sensitivity remains unexplored.Therefore,this study aims to investigate the connections between TIR,derived from SMBG,and indices representingβ-cell functionality and insulin sensitivity.The primary objective of this study was to elucidate the relationship between short-term glycemic control(measured as points in range[PIR])and bothβ-cell function and insulin sensitivity.Methods:This cross-sectional study enrolled 472 hospitalized patients with type 2 diabetes mellitus(T2DM).To assessβ-cell secretion capacity,we employed the insulin secretion-sensitivity index-2(ISSI-2)and(ΔC-peptide_(0-120)/Δglucose_(0-120))×Matsuda index,while insulin sensitivity was evaluated using the Matsuda index and HOMA-IR.Since SMBG offers glucose data at specific point-in-time,we substituted TIR with PIR.According to clinical guidelines,values falling within the range of 3.9-10 mmol were considered"in range,"and the corresponding percentage was calculated as PIR.Results:We observed significant associations between higher PIR quartiles and increased ISSI-2,(ΔC-peptide_(0-120)/Δglucose_(0-120))×Matsuda index,Matsuda index(increased)and HOMA-IR(decreased)(all P<0.001).PIR exhibited positive correlations with log ISSI-2(r=0.361,P<0.001),log(ΔC-peptide_(0-120)/Δglucose_(0-120))×Matsuda index(r=0.482,P<0.001),and log Matsuda index(r=0.178,P<0.001)and negative correlations with log HOMA-IR(r=-0.288,P<0.001).Furthermore,PIR emerged as an independent risk factor for log ISSI-2,log(ΔC-peptide_(0-120)/Δglucose_(0-120))×Matsuda index,log Matsuda index,and log HOMA-IR.Conclusion:PIR can serve as a valuable tool for assessingβ-cell function and insulin sensitivity. 展开更多
关键词 time in range points in range self-monitoring of blood glucose β-cell function insulin sensitivity
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国产高效GaInP/GaAs/Ge三结太阳电池的低能质子辐射效应 被引量:6
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作者 王荣 刘运宏 +1 位作者 孙旭芳 崔新宇 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第10期1599-1602,共4页
运用2×1.7MV串列静电加速器提供的质子束,对MOCVD方法制备的GaInP/GaAs/Ge三结电池进行低能质子辐射效应研究.选质子能量为0.28,0.62和2.80MeV,辐照注量为1×1010,1×1011,1×1012和1×1013cm-2.对电池的辐射效应... 运用2×1.7MV串列静电加速器提供的质子束,对MOCVD方法制备的GaInP/GaAs/Ge三结电池进行低能质子辐射效应研究.选质子能量为0.28,0.62和2.80MeV,辐照注量为1×1010,1×1011,1×1012和1×1013cm-2.对电池的辐射效应用I-V特性和光谱响应测试进行分析.研究结果表明:随辐照注量的增加,太阳电池性能参数Isc,Voc和Pmax的衰降幅度均增大;但随质子辐照能量的增加,Isc,Voc和Pmax的衰降幅度均减小.实验中0.28MeV质子辐照引起电池Isc,Voc,Pmax衰降最显著,三结电池中光谱响应衰降最明显的是中间GaAs电池. 展开更多
关键词 gainp/GaAs/Ge太阳电池 质子辐照 光谱响应
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(Al)GaInP材料的MOCVD生长研究 被引量:3
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作者 俞波 李建军 +6 位作者 盖红星 牛南辉 邢艳辉 邓军 韩军 廉鹏 沈光地 《激光与红外》 CAS CSCD 北大核心 2005年第3期181-183,共3页
对可见光半导体光电子材料Ga0. 5In0. 5P、(AlXGa1-X)0. 5In0. 5P的MOCVD生长进行了研究。使用X射线双晶衍射和PL谱测量结合的手段,研究了生长速度和生长温度对材料质量的影响。根据测试结果优化了(Al)GaInP材料的生长速度和生长温度。... 对可见光半导体光电子材料Ga0. 5In0. 5P、(AlXGa1-X)0. 5In0. 5P的MOCVD生长进行了研究。使用X射线双晶衍射和PL谱测量结合的手段,研究了生长速度和生长温度对材料质量的影响。根据测试结果优化了(Al)GaInP材料的生长速度和生长温度。为研制出高性能的650nm半导体激光器打下良好的材料基础。 展开更多
关键词 金属有机化合物汽相淀积 ALgainp gainp
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自对准GaInP/GaAs HBT器件 被引量:8
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作者 钱永学 刘训春 +1 位作者 王润梅 石瑞英 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2002年第5期513-516,共4页
利用发射极金属掩蔽进行内切腐蚀的方法研制成自对准 In Ga P/Ga As异质结双极晶体管 ( HBT) ,其特征频率 ( ft)达到 5 4 GHz,最高振荡频率 ( fmax)达到 71GHz,并且 ,这种方法工艺简单 ,成品率高 .文中还对该结果进行了分析 。
关键词 异质结双极晶体管 镓铟磷/镓砷 T形发射极 铡向内切 HBT
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Si掺杂对AlGaInP/GaInP多量子阱性能的影响 被引量:1
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作者 李述体 范广涵 +4 位作者 周天明 王浩 孙慧卿 郑树文 郭志友 《发光学报》 EI CAS CSCD 北大核心 2004年第4期375-378,共4页
采用LP MOCVD技术在n GaAs衬底上生长了AlGaInP/GaInP多量子阱红光LED外延片。以X射线双晶衍射技术和光致发光技术对外延片进行了表征 ,研究了Si掺杂对AlGaInP/GaInP多量子阱性能的影响。研究表明 :掺Si能大大提高 (Al0 .3 Ga0 .7) 0 .5... 采用LP MOCVD技术在n GaAs衬底上生长了AlGaInP/GaInP多量子阱红光LED外延片。以X射线双晶衍射技术和光致发光技术对外延片进行了表征 ,研究了Si掺杂对AlGaInP/GaInP多量子阱性能的影响。研究表明 :掺Si能大大提高 (Al0 .3 Ga0 .7) 0 .5In0 .5P/Ga0 .5In0 .5P多量子阱的发光强度。相对于未故意掺杂的样品 ,多量子阱垒层掺Si使多量子阱的发光强度提高了 13倍 ,阱层和垒层均掺Si使多量子阱的发光强度提高了 2 8倍。外延片的X射线双晶衍射测试表明 。 展开更多
关键词 ALgainp Algainp/gainp多量子阱 X射线双晶衍射 Si掺杂 光致发光
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GaInP/GaAs/Ge三结太阳电池辐照损伤效应及加固技术研究进展 被引量:6
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作者 王祖军 王兴鸿 +7 位作者 晏石兴 唐宁 崔新宇 张琦 石梦奇 黄港 聂栩 赖善坤 《半导体光电》 CAS 北大核心 2022年第3期490-504,共15页
文章首先重点介绍了国内外开展GaInP/GaAs/Ge三结太阳电池的电子、质子及其他辐射粒子或射线辐照实验的研究进展,然后从辐照损伤效应的仿真模拟研究、抗辐射加固技术、损伤预估方法等方面综述了GaInP/GaAs/Ge三结太阳电池辐照损伤效应... 文章首先重点介绍了国内外开展GaInP/GaAs/Ge三结太阳电池的电子、质子及其他辐射粒子或射线辐照实验的研究进展,然后从辐照损伤效应的仿真模拟研究、抗辐射加固技术、损伤预估方法等方面综述了GaInP/GaAs/Ge三结太阳电池辐照损伤效应及加固技术的研究进展,最后梳理了当前GaInP/GaAs/Ge三结太阳电池辐照损伤效应研究中亟待解决的关键技术问题,为深入开展GaInP/GaAs/Ge三结太阳电池辐照损伤效应实验方法标准制定、损伤机理分析、在轨寿命预估及抗辐射加固技术研究提供了理论指导和实验技术支持。 展开更多
关键词 gainp/GaAs/Ge三结太阳电池 辐照损伤 位移效应 抗辐射加固 电子辐照 质子辐照
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MOCVD的GaInP薄膜生长可视化研究 被引量:1
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作者 胡贵华 胡小梅 +3 位作者 朱文华 俞涛 苏玉鹏 王海东 《系统仿真学报》 CAS CSCD 北大核心 2009年第23期7498-7502,共5页
运用动力学蒙特卡罗(KMC)方法对金属有机化学气相沉积(MOCVD)生长GaInP薄膜过程进行了模拟;将模拟的结果与虚拟现实(VR)系统开发的软件开发包Open Inventor接口,实现了MOCVD反应室内GaInP薄膜生长过程的可视化仿真。模拟仿真结果准确直... 运用动力学蒙特卡罗(KMC)方法对金属有机化学气相沉积(MOCVD)生长GaInP薄膜过程进行了模拟;将模拟的结果与虚拟现实(VR)系统开发的软件开发包Open Inventor接口,实现了MOCVD反应室内GaInP薄膜生长过程的可视化仿真。模拟仿真结果准确直观地展示了MOCVD反应室内GaInP薄膜生长的过程,揭示了扩散时间和衬底温度对GaInP薄膜形貌的影响规律;可视化结果为优化MOCVD生长GaInP薄膜的工艺参数提供理论依据。 展开更多
关键词 动力学蒙特卡罗方法 金属有机化学气相沉积 虚拟现实系统 gainp薄膜形貌 工艺参数
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一种国产GaInP/GaAs/Ge三结太阳电池的电子辐照特性 被引量:5
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作者 牛振红 郭旗 +3 位作者 任迪远 刘刚 高嵩 肖志斌 《核技术》 EI CAS CSCD 北大核心 2007年第1期37-39,共3页
对一种国产GalnP/GaAs/Ge三结太阳电池进行了1 MeV电子辐照损伤研究,分析和讨论了不同注量电池电参数和光谱响应的衰降规律。实验结果表明,这种电池不但有很高的初始效率,而且有好的抗辐射性,电子注量达到1×1015cm-2时,最大输出功... 对一种国产GalnP/GaAs/Ge三结太阳电池进行了1 MeV电子辐照损伤研究,分析和讨论了不同注量电池电参数和光谱响应的衰降规律。实验结果表明,这种电池不但有很高的初始效率,而且有好的抗辐射性,电子注量达到1×1015cm-2时,最大输出功率为辐照前的80.4%。辐照后GalnP顶电池几乎不发生退化,而GaAs中间电池短路电流严重退化,致使GalnP顶电池与GaAs中间电池电流失配,是GalnP/GaAs/Ge电池性能退化的主要原因。 展开更多
关键词 多结太阳电池 gainp/GaAs/Ge 电子辐照 辐照效应 光谱响应
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AlGaInP/GaInP多量子阱的拉曼光谱 被引量:1
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作者 陈练辉 范广涵 +1 位作者 孟耀勇 刘桂强 《量子电子学报》 CAS CSCD 北大核心 2004年第6期859-862,共4页
利用LP-MOCVD生长了不同周期的AlGaInP/GaInP MQW样品,并测量了它们的拉曼光谱。由于样品包括了掺杂的电流扩展层和欧姆接触层以及上、下限制层,拉曼光谱中观察到了与掺杂有关的耦合电子(空穴)气-纵光学声子模。根据喇曼光谱的选择定则... 利用LP-MOCVD生长了不同周期的AlGaInP/GaInP MQW样品,并测量了它们的拉曼光谱。由于样品包括了掺杂的电流扩展层和欧姆接触层以及上、下限制层,拉曼光谱中观察到了与掺杂有关的耦合电子(空穴)气-纵光学声子模。根据喇曼光谱的选择定则,结合光致发光谱,发现AlP-LO/TO的相对强度比可以评定晶体AlGaInP MQW的生长质量。 展开更多
关键词 光电子学 Algainp/gainp MQW 拉曼光谱 耦合电子(空穴)气-纵光学声子模
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μ-cell法测定农药对男性精子机能影响的分析 被引量:4
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作者 刘学 李贤相 +3 位作者 江隆久 卜新柱 徐恒秋 徐希平 《中华疾病控制杂志》 CAS 1999年第2期12-13,共2页
目的研究农药对生育生殖的影响。方法采用μ-cel测定方法。结果暴露组精子的质量与数量都受到了影响,均呈下降趋势。结论长期暴露于农药污染,可能引起生育生殖功能的下降。
关键词 农药 精子 μ-cell测定方法
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0.28-2.80MeV质子辐射对空间实用GaInP/GaAs/Ge多结太阳电池性能的影响 被引量:2
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作者 刘运宏 孙旭芳 王荣 《核技术》 EI CAS CSCD 北大核心 2008年第1期47-49,共3页
用0.28、0.62和2.80 MeV质子束模拟空间辐射对国产MOCVD方法制备的GaInP/GaAs/Ge多结电池进行质子辐射效应研究。辐照注量为1×10^(12)cm^(-2)。对电池的辐射效应用I-V特性和光谱响应测试进行分析。结果表明:随质子辐照能量的增加,... 用0.28、0.62和2.80 MeV质子束模拟空间辐射对国产MOCVD方法制备的GaInP/GaAs/Ge多结电池进行质子辐射效应研究。辐照注量为1×10^(12)cm^(-2)。对电池的辐射效应用I-V特性和光谱响应测试进行分析。结果表明:随质子辐照能量的增加,太阳电池性能参数I_(sc),V_(oc),p_(max)和光谱响应的衰降幅度均减小,0.28MeV质子辐照引起电池性能衰降最显著;低能质子辐照引起中间GaAs电池光谱响应衰降更明显。 展开更多
关键词 gainp/GaAs/Ge太阳电池 质子辐照 光谱响应
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GaInP材料生长及其性质研究 被引量:1
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作者 董建荣 刘祥林 +3 位作者 陆大成 汪度 王晓晖 王占国 《Journal of Semiconductors》 EI CAS CSCD 北大核心 1996年第2期88-92,共5页
用X光双晶衍射、Hall和光致发光研究了MOCVD生长的GaxIn1-xP(x=0.476~0.505)外延层.发现Ga组分随V/Ⅲ比的增大略有下降,认为是由于Ga-P键比In-P键强所造成的.77K下电子迁移率达3... 用X光双晶衍射、Hall和光致发光研究了MOCVD生长的GaxIn1-xP(x=0.476~0.505)外延层.发现Ga组分随V/Ⅲ比的增大略有下降,认为是由于Ga-P键比In-P键强所造成的.77K下电子迁移率达3300cm2/(V·s).Ga0.5In0.5P的载流子浓度随生长温度升高、V/Ⅲ比的增大而降低,提出磷(P)空位(Vp)是自由载流子的一个重要来源.17K下PL峰能和计算的带隙最大相差113meV,这可能与GaInP中杂质或缺陷以及其中存在有序结构有关. 展开更多
关键词 gainp MOCVD生长 外延层 半导体材料
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A1GaInP四元系材料双异质结发光二极管的最佳Al组分分析 被引量:3
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作者 陈贵楚 范广涵 +1 位作者 陈练辉 刘鲁 《量子电子学报》 CAS CSCD 北大核心 2003年第5期595-598,共4页
鉴于双异质结发光二极管(DH—LED)限制层的Al组分的不确定性,本文通过分析载流子在双异质结中的输运及受约束情况,从理论上剖析了Al组分确定为一个最合适的取值时,有源层中的载流子应有一个最大数量的复合,此时LED的复合效率最高、发光... 鉴于双异质结发光二极管(DH—LED)限制层的Al组分的不确定性,本文通过分析载流子在双异质结中的输运及受约束情况,从理论上剖析了Al组分确定为一个最合适的取值时,有源层中的载流子应有一个最大数量的复合,此时LED的复合效率最高、发光最强。这个最佳Al组分的确认,对于器件结构设计以及相关的MOCVD材料生长有指导意义。 展开更多
关键词 A1gainp四元系材料 双异质结发光二极管 DH—LED AL组分 铝镓铟磷材料
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退火对p型GaP和p型AlGaInP载流子浓度的影响 被引量:1
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作者 李述体 范广涵 +4 位作者 周天明 孙慧卿 王浩 郑树文 郭志友 《华南师范大学学报(自然科学版)》 CAS 2004年第1期67-70,共4页
采用LP-MOCVD技术在n-GaAs衬底上生长了AlGaInP/GaInP多量子阱红光LED外延片.相关研究表明退火对p型GaP和p型AlGaInP载流子浓度有重要影响.与未退火样品相比,460℃退火15min,外延片p型GaP层的空穴浓度由5 6×1018cm-3增大到6 5×... 采用LP-MOCVD技术在n-GaAs衬底上生长了AlGaInP/GaInP多量子阱红光LED外延片.相关研究表明退火对p型GaP和p型AlGaInP载流子浓度有重要影响.与未退火样品相比,460℃退火15min,外延片p型GaP层的空穴浓度由5 6×1018cm-3增大到6 5×1018cm-3,p型AlGaInP层的空穴浓度由6 0×1017cm-3增大到1 1×1018cm-3.这可能是由于退火破坏了Mg-H复合体,恢复了Mg受主的活性导致的. 展开更多
关键词 半导体 光致发光 砷化镓 载流子浓度 退火
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