31.38 Gb/s GaN-based LED array visible light communication system enhanced with V-pit and sidewall quantum well structure

Although the 5G wireless network has made significant advances,it is not enough to accommodate the rapidly rising requirement for broader bandwidth in post-5G and 6G eras.As a result,emerging technologies in higher frequencies including visible light communication(VLC),are becoming a hot topic.In particular,LED-based VLC is foreseen as a key enabler for achieving data rates at the Tb/s level in indoor scenarios using multi-color LED arrays with wavelength division multiplexing(WDM)technology.This paper proposes an optimized multi-color LED array chip for high-speed VLC systems.Its long-wavelength GaN-based LED units are remarkably enhanced by V-pit structure in their efficiency,especially in the“yellow gap”region,and it achieves significant improvement in data rate compared with earlier research.This work investigates the V-pit structure and tries to provide insight by introducing a new equivalent circuit model,which provides an explanation of the simulation and experiment results.In the final test using a laboratory communication system,the data rates of eight channels from short to long wavelength are 3.91 Gb/s,3.77 Gb/s,3.67 Gb/s,4.40 Gb/s,3.78 Gb/s,3.18 Gb/s,4.31 Gb/s,and 4.35 Gb/s(31.38 Gb/s in total),with advanced digital signal processing(DSP)techniques including digital equalization technique and bit-power loading discrete multitone(DMT)modulation format.

Progress and prospects of GaN-based LEDs using nanostructures

Progress with GaN-based light emitting diodes （LEDs） that incorporate nanostructures is reviewed, especially the re- cent achievements in our research group. Nano-patterned sapphire substrates have been used to grow an A1N template layer for deep-ultraviolet （DUV） LEDs. One efficient surface nano-texturing technology, hemisphere-cones-hybrid nanostruc- tures, was employed to enhance the extraction efficiency of InGaN flip-chip LEDs. Hexagonal nanopyramid GaN-based LEDs have been fabricated and show electrically driven color modification and phosphor-free white light emission because of the linearly increased quantum well width and indium incorporation from the shell to the core. Based on the nanostruc- tures, we have also fabricated surface plasmon-enhanced nanoporous GaN-based green LEDs using AAO membrane as a mask. Benefitting from the strong lateral SP coupling as well as good electrical protection by a passivation layer, the EL intensity of an SP-enhanced nanoporous LED was significantly enhanced by 380%. Furthermore, nanostructures have been used for the growth of GaN LEDs on amorphous substrates, the fabrication of stretchable LEDs, and for increasing the 3-dB modulation bandwidth for visible light communication.

Laser lift-off technique and the re-utilization of GaN-based LED films grown on sapphire substrate

A thin GaN LED film,grown on 2-inch-diameter sapphire substrates,is separated by laser lift-off. Atom force microscopy (AFM) and the double-crystal X-ray diffraction (XRD) have been employed to characterize the performance of GaN before and after the lift-off process. It is demonstrated that the separation and transfer processes do not alter the crystal quality of the GaN films obviously. InGaN/ GaN multi-quantum-wells (MQW's) structure is grown on the separated sapphire sub-strate later and is compared with that grown on the conventional substrate under the same condition by using PL and XRD spectrum.

Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching

We use a simple and controllable method to fabricate GaN-based light-emitting diodes （LEDs） with 22° undercut sidewalls by the successful implementation of the inductively coupled plasma reactive ion etching （ICP-RIE）. Our exper- iment results show that the output powers of the LEDs with 22° undercut sidewalls are 34.8 rnW under a 20-mA current injection, 6.75% higher than 32.6 mW, the output powers of the conventional LEDs under the same current injection.

Simulation Study on Optical Properties of GaN-based Blue LED

The optical properties of GaN-based blue light-emitting diodes(LEDs)are extremely important to study as these LEDs are utilized in a great many industries due to their excellent qualities,including high brightness,high energy efficiency,low energy consumption,and rapid reaction time.In this paper,Silvaco TCAD simulation software is used to do two-dimensional modeling and simulation of a GaN-based blue single quantum well vertical structure LED,with an emphasis on varied forward voltages,In components in InGaN,and quantum well thickness.The volt-ampere characteristic curve is compared and evaluated,as well as the energy band structure,carrier concentration,radiation recombination efficiency,electroluminescence spectrum,and internal current density distribution.The results show that when the forward voltage is 3.5V and the thickness of the quantum well is constant,the luminescence spectrum will show a red shift with the increase of the In content in the quantum well,and the luminescence spectrum will also show a red shift when the thickness of the quantum well is increased.However,when the quantum well thickness and In component are kept constant,the luminescence spectrum appears a red shift with increasing forward voltage.

Micro-plasma noise of 30 krad gamma irradiation broken-down GaN-based LED

A correlation model between micro plasma noise and gamma irradiation of GaN-based LED is built.The reverse bias I-V characteristics and micro-plasma noise were measured in it, before and after Gamma irradiation. It is found that even after 30 krad Gamma irradiation, the GaN-based LED has soft breakdown failure. The reverse soft breakdown region current local instability of this device before irradiation is analyzed by the microplasma noise method. The results were obtained that if the GaN-based LED contained micro-plasma defects, it will fail after low doses（30 krad） of gamma irradiation. The results clearly reflect the micro-plasma defects induced carriers fluctuation noise and the local instability of GaN-based LED reverse bias current.

不同波长LEDs光源对苦荞芽菜生长、生物活性物积累及抗氧化活性的影响

为探究不同波长LEDs光源对苦荞芽菜生长的影响,本研究以黑暗(D)作对照,采用单色红(R)、蓝(B)、绿(G)光源培养苦荞芽菜,收获后分别测定其形态指标、生物活性物积累量、类黄酮合成关键基因表达量及抗氧化活性指标,结果表明:B处理的苦荞芽菜下胚轴呈深红色,伸长生长受到强烈抑制,花青素、总黄酮及总酚积累量均最高,分别是D的7.18、2.96和2.49倍;R处理的下胚轴呈浅粉色,上述3种生物活性物积累量分别是对照的2.56、1.68和1.40倍;G处理的下胚轴伸长与R相似,外观呈透明白色,生物活性物积累量与对照无显著差异。B和R均强烈诱导类黄酮生物合成通路上关键结构基因表达,显著增加苦荞芽菜下胚轴抗氧化活性。此外,各单色光处理均未显著影响苦荞芽菜可食用部位的鲜重。由此可见,红、蓝LEDs光源可显著影响苦荞芽菜形态生长,并增加其生物活性物积累及抗氧化能力,以蓝光最佳。

宽输入电压范围的软开关四路均流LED驱动器

为了应对LED的不同输入电压等级应用场合,提出了一种具有宽输入电压范围的四路LED驱动器。该驱动器将Buck-Boost结构集成到全桥网络中,通过不同的开关组合工作在不同的模式,从而获得宽增益。采用无源均流方式实现了四路LED输出均流。由于驱动器的工作特性,开关管无需添加无损缓冲电路即可在全范围内实现零电压开通。详细分析了该驱动器的调制策略、工作原理和性能。最后,搭建了一个69 W的实验样机,实验结果表明该驱动器的输入电压范围为17 V~216 V,均流误差低于3.7%,最大效率可达97.8%。

温室园艺LED照明研究与应用现状

LED作为设施园艺光环境调控的优选光源和手段,节能、精准、长寿命且光效率高,可通过光质及其光强和光周期等光照属性的控制,调控植物光合作用和光形态建成,调节设施园艺作物生长发育、生物量和果实产量、开花及农产品品质,获得温室补光的效益。而且,基于时空光环境调控带来的显著效益,动态照明和立体照明应运而生,方兴未艾,应用前景广阔。本文总结了温室LED照明产品和应用领域,提出了动态照明和立体照明技术概念,总结了光质、光强和光周期植物调控的研究进展,重点阐述了光质调控植物园艺作物生长发育、产量、开花及农产品品质的研究进展,对未来温室LED补光产业发展前景进行了展望。

LED3A强化紫花苜蓿修复Cd污染土壤的效果研究

研究可生物降解螯合剂N-十二酰基乙二胺三乙酸盐(LED3A)诱导强化紫花苜蓿修复Cd污染土壤的效果,采用盆栽方法,考察LED3A对紫花苜蓿生理指标、Cd亚细胞分布和化学形态以及增效提取土壤中Cd的影响.结果表明,Cd胁迫显著抑制紫花苜蓿的生长及光合作用,增加丙二醛(MDA)的积累.而在土培体系中施用LED3A,可以提高植株生物量、光合色素含量、过氧化物酶(POD)和超氧化物歧化酶(SOD)活性,缓解细胞膜脂过氧化损伤和Cd诱导产生的氧化应激.LED3A的螯合强化作用能够增大紫花苜蓿细胞质中Cd的分布比例,促使植株中的Cd由高活性形态向低活性形态转化,通过细胞壁固持和液泡区隔化提高耐Cd性能,进而减轻毒害.与不添加LED3A组相比,最佳LED3A添加量(321.3 mg·kg^(-1))组紫花苜蓿植株中的总Cd含量和积累量分别提高了29.4%和69.1%,地下/地上富集系数及转运系数分别增加了28.6%,36.4%和10.5%.说明添加适量LED3A可有效提高紫花苜蓿对Cd的耐受性与修复Cd污染土壤的效果.

液晶汽车仪表LED背光硬件电路分析与设计

为了使液晶汽车仪表的背光灯在受到外界电气干扰的情况下能够保持稳定的输出电流、亮度不发生变化,对已使用的三种汽车仪表LED背光电路进行了研究和分析,提出了一种稳定性较高的硬件电路设计——仪表LED恒流源电路。该电路可通过调节精密电阻值来调节LED背光灯的亮度,设计方案简单、调整电流便捷、成本较低,在液晶汽车仪表市场中具有较高的应用价值。

LED产品出口扩张对产业专利创新的影响研究

基于我国LED产业呈现“出口规模”和“专利创新”双增长模式,本文利用2014—2021年35家沪深A股上市企业集团的面板数据,考察出口对创新的影响机理。研究表明,在短期,出口扩张显著抑制专利创新数量;在长期,出口扩张显著促进专利创新数量,且对实用新型和外观设计专利的促进效果显著大于发明专利。基于研究成果,建议应当在控制过度的欧美市场依赖和同质产品竞争的基础上重视出口扩张在长期对专利创新的积极影响,一定程度上对改善创新环境及提高创新水平都具有积极意义。

LED光处理对鲜切果蔬品质影响的研究进展

鲜切果蔬因其方便、新鲜、安全等优点而受到消费者喜爱,但果蔬经切分处理会引发微生物侵染、褐变和货架期缩短等一系列问题。发光二极管(Light-emitting diode, LED)光处理技术能降低果蔬呼吸强度,延缓衰老,且因其成本低廉、绿色安全等优点在鲜切果蔬中应用广泛。综述了LED光处理对鲜切果蔬感官品质、生理品质和表面微生物的影响,以期为LED光处理技术在鲜切果蔬保鲜应用中提供理论参考。

Micro LED车灯投影光学系统设计与优化

本文提出了一种基于Micro LED阵列的车灯投影方案,设计了以像素尺寸为80μm×80μm的200×150白光Micro LED阵列作为显示光源,视场角为16°×34°的车灯投影光学系统,并对物面倾斜角度和光学系统结构进行了优化。此外,分别采用反向畸变处理方法和像素灰度调制方法用以解决车灯投影图像的梯形畸变和照度均匀性问题,并搭建了投影实验平台,对图像校正方法进行了验证。实验结果表明:校正后图像梯形畸变系数p1,p2分别从0.0932和0.3680下降至0.0835和0.0373,像面照度均匀性从83.2%提高到93.2%。本文通过对基于Micro LED的倾斜投影车灯光学系统进行优化设计及采用图像校正方法,实现了高光效、低畸变的车灯投影。

不同光质配比的LED光源补光对水稻机插秧苗生长发育的影响

以甬优12和扬两优6号作为试验材料,育秧期间采用纯蓝LED光源、纯红LED光源及红蓝光质各50%配比光源补光,以自然光下育秧为对照,研究不同红蓝光质配比LED光源补光对水稻机插秧苗生长发育的影响。结果表明,不同光质配比的LED光源补光对水稻秧苗生长有显著影响。蓝光能够抑制幼苗株高,提高充实度和根冠比,在培育壮苗方面发挥重要作用。红光处理下的水稻幼苗茎和叶鞘显著伸长,秧苗生长进程加快。此外,参试2个品种经红蓝光处理后的幼苗叶龄显著提高。试验结果探明了使用LED补光处理对水稻幼苗形态的影响,为调控水稻工厂化育秧的光环境提供了科学依据。

基于LED反光杯系统的优化研究

在照明系统设计中,接收面的均匀照明以及光能的充分利用一直是光源设计急需解决的问题。目前在LED光源设计领域中,通常采用斯派罗法则分析和微分方程计算的方式进行照明效果优化,这些方式的优化层面较单一,周期长且误差较大。为了加强LED光源系统优化效率,同步提高光源系统的光照均匀度和能量利用率,论文提出了基于光照均匀度评价函数、能量利用率评价函数和综合性评价函数的优化设计算法。运用数值分析方法对单光源系统的反光杯第二面圆锥常数K与曲率半径R进行优化调整,实现整个反光杯光源系统的光照均匀度和能量利用率的同步优化。研究结果表明:利用该文算法优化后的系统比未优化的光源系统光照均匀度提高了14.2%,能量利用率提高了16.75%,与理想值的接近度提升了14.42%,验证了优化方法的可行性。在此基础上,论文进一步研究多光源系统阵列间距对系统光照均匀度和能量利用率的影响,得出光源阵列系统的最优阵列间距,在此间距下的光照均匀度与理想值的接近度为44.84%,能量利用率为88.84%,最终实现了光照均匀度和能量利用率均较好的矩形阵列光源系统。

LED红蓝光配比对番茄生长和光合的影响

以番茄品种‘普罗旺斯’为材料,在双拱钢架日光温室内进行人工补光试验,设置T1(2R3B,即红光/蓝光珠数配比R:B=2:3)、T2(4R1B)、T3(6R1B)、T4(7R1B)四组红蓝光处理,以不进行人工补光为对照(CK),探究温室番茄生长和光合响应最优的红蓝光配比。结果表明,在T1处理下35d后,番茄的株高、SPAD、蒸腾速率(Tr)和光化学淬灭系数(qP)较对照组分别显著提高26.7%、19.6%、107.6%和34.3%。在T3处理下35d后,番茄的茎粗、花朵数、净光合速率(Pn)、胞间CO_(2)浓度(Ci)、气孔导度(Gs)、实际光化学效率(ΦPSⅡ)和电子传输速率(ETR)较对照组分别显著提高26.9%、38.6%、133.7%、5.9%、183.3%、31.3%和30.9%。在T4处理下35d后,最大光化学效率(Fv/Fm)较对照组分别显著提高4.0%。在对设施番茄进行不同配比红蓝光补光处理下,较对照组可显著促进番茄的生长及光合作用,在本试验设置的2R3B、4R1B、6R1B、7R1B四组红蓝组合光处理中,6R1B(红/蓝光珠数配比R:B=6:1)处理下各项指标表现的综合效果最佳,可为温室番茄栽培LED补光提供一定的理论指导。

可用于近紫外LED芯片的铕-铱双金属配合物红光共聚荧光粉

本研究以Ir配合物FIrPic作为Eu离子的配体,合成了一种新的Eu-Ir双金属配合物Eu(FIrPic)_(2)(Phen)UA,并通过自由基聚合成功制备了红色发光荧光共聚物PM-Eu-Ir,适用于商用近紫外芯片型LED。在不影响Eu^(3+)离子的荧光发射特性的前提下,加入Ir-配合物可以有效地敏化Eu^(3+)离子,增强其对400 nm紫外光的吸收。在365 nm紫外光激发下,共聚物PM-Eu-Ir在612 nm处显示出最强的发射峰,其CIE坐标为(0.461,0.254),这与365 nm近紫外芯片非常吻合。红色共聚荧光粉PM-Eu-Ir的微观形貌为典型的多层空间网络结构,除了表现出明显的红光发射和634.54μs的荧光寿命外,还在25~250℃的宽温范围内具有优异的热稳定性。使用共聚物PM-Eu-Ir制作的LED发出的红光亮度为149800 cd/m^(2)。研究结果表明,所制备的共聚荧光粉可作为红光元件用于制造近紫外芯片白光LED。

一种用于光隔离IGBT栅极驱动的智能型LED驱动电路

采用双极型工艺设计了一种智能型高速LED驱动电路,可用于光隔离IGBT栅极驱动芯片的输入驱动。该设计采用一种新型逻辑门结构来实现信号传输、故障反馈以及外部置位等功能,同时达到降低信号传输延迟时间的目的。测试结果表明,在常温条件下,LED驱动电路的输入信号传输延迟时间为70 ns,复位信号有效到故障消除的延迟时间为4.59μs。所设计的驱动电路能够满足光耦隔离IGBT栅极驱动芯片的使用要求。

Different properties of GaN-based LED grown on Si(111) and transferred onto new substrate

InGaN MQW LEDs, grown by metal-organic chemical vapor deposition (MOCVD) on Si(111) substrates, were successfully bonded and transferred onto new Si substrate. After chemical etching Si(111) substrate and inductively coupled plasma (ICP) etching the transferred LED film to Si-doped layer, a vertical structure GaN blue LEDs were then fabricated. The characteristics of the lateral structure LED (grown on Si) and the vertical structure LED (bonded on Si) were investigated. It shows the performance of ver- tical structure LEDs had obviously been improved compared to the lateral structure LEDs and the tensile stress in GaN layer of vertical structure LEDs is smaller than that in lateral structure LEDs.