The dream of epitaxially integrating III-nitride semiconductors on large diameter silicon is being fulfilled through the joint R&D efforts of academia and industry, which is driven by the great potential of Ga N-onsi...The dream of epitaxially integrating III-nitride semiconductors on large diameter silicon is being fulfilled through the joint R&D efforts of academia and industry, which is driven by the great potential of Ga N-onsilicon technology in improving the efficiency yet at a much reduced manufacturing cost for solid state lighting and power electronics. It is very challenging to grow high quality Ga N on Si substrates because of the huge mismatch in the coefficient of thermal expansion(CTE) and the large mismatch in lattice constant between Ga N and silicon, often causing a micro-crack network and a high density of threading dislocations(TDs) in the Ga N film.Al-composition graded Al Ga N/Al N buffer layers have been utilized to not only build up a compressive strain during the high temperature growth for compensating the tensile stress generated during the cool down, but also filter out the TDs to achieve crack-free high-quality n-Ga N film on Si substrates, with an X-ray rocking curve linewidth below 300 arcsec for both(0002) and(10N12) diffractions. Upon the Ga N-on-Si templates, prior to the deposition of p-Al Ga N and p-Ga N layers, high quality In Ga N/Ga N multiple quantum wells(MQWs) are overgrown with well-engineered V-defects intentionally incorporated to shield the TDs as non-radiative recombination centers and to enhance the hole injection into the MQWs through the via-like structures. The as-grown Ga N-on-Si LED wafers are processed into vertical structure thin film LED chips with a reflective p-electrode and the N-face surface roughened after the removal of the epitaxial Si(111) substrates, to enhance the light extraction efficiency. We have commercialized Ga N-on-Si LEDs with an average efficacy of 150–160 lm/W for 1mm^2 LED chips at an injection current of 350 m A, which have passed the 10000-h LM80 reliability test. The as-produced Ga N-on-Si LEDs featured with a single-side uniform emission and a nearly Lambertian distribution can adopt the wafer-level phosphor coating procedure, and are suitable for directional lighting, camera flash, streetlighting, automotive headlamps, and otherlighting applications.展开更多
The past decades have witnessed a tremendous development of GaN-based power electronic devices grown on Si substrate.This article provides a concise introduction,review,and outlook of the research developments of GaN-...The past decades have witnessed a tremendous development of GaN-based power electronic devices grown on Si substrate.This article provides a concise introduction,review,and outlook of the research developments of GaN-on-Si power device technology.The comprehensive review has discussed the crucial issues in the state-of-the-art device technology based on both GaN materials epitaxy including stress control and point defects study,and device fabrication including normally offsolutions like Cascode,trench MIS-gate,and p-GaN gate.Device reliability and other common fabrication issues in GaN high electron mobility transistors(HEMTs)are also discussed.Lastly,we give an outlook on the GaN-on-Si power devices from two aspects,namely high frequency,and high power GaN ICs,and GaN vertical power devices.展开更多
The electrical properties of the structure of GaN grown on an Si (111) substrate with low-temperature (LT) A1N interlayers by metal-organic chemical-vapour deposition are investigated. An abnormal P-type conductio...The electrical properties of the structure of GaN grown on an Si (111) substrate with low-temperature (LT) A1N interlayers by metal-organic chemical-vapour deposition are investigated. An abnormal P-type conduction is observed in our GaN-on-Si structure by Hall effect measurement, which is mainly due to the A1 atom diffusing into the Si substrate and acting as an acceptor dopant. Meanwhile, a constant n-type conduction channel is observed in LT-A1N, which causes a conduction-type conversion at low temperature (50 K) and may further influence the electrical behavior of this structure.展开更多
This work reports the fabrication of via-thin-film light-emitting diode (via-TF-LED) to improve the light output power (LOP) of blue/white GaN-based LEDs grown on Si (111) substrates. The as-fabricated via-TF-LE...This work reports the fabrication of via-thin-film light-emitting diode (via-TF-LED) to improve the light output power (LOP) of blue/white GaN-based LEDs grown on Si (111) substrates. The as-fabricated via-TF-LEDs were featured with a roughened n-GaN surface and the p-GaN surface bonded to a wafer carrier with a silver-based reflective electrode, together with an array of embedded n-type via pillar metal contact from the p-GaN surface etched through the multiple-quantum-wells (MQWs) into the n-GaN layer. When operated at 350 mA, the via-TF- LED gave an enhanced blue LOP by 7.8% and over 3.5 times as compared to the vertical thin-film LED (TF-LED) and the conventional lateral structure LED (LS-LED). After covering with yellow phosphor that converts some blue photons into yellow light, the via-TF-LED emitted an enhanced white luminous flux by 13.5% and over 5 times, as compared with the white TF-LED and the white LS-LED, respectively. The significant LOP improve- ment of the via-TF-LED was attributed to the elimination of light absorption by the Si (111) epitaxial substrate and the finger-like n-electrodes on the roughened emitting surface.展开更多
基金Project supported financially by the National Natural Science Foundation of China(Nos.61522407,61534007,61404156)the National High Technology Research and Development Program of China(No.2015AA03A102)+3 种基金the Science&Technology Program of Jiangsu Province(Nos.BA2015099,BE2012063)the Suzhou Science&Technology Program(No.ZXG2013042)the Recruitment Program of Global Experts(1000 Youth Talents Plan)supported technically by Nano-X from SINANO,CAS
文摘The dream of epitaxially integrating III-nitride semiconductors on large diameter silicon is being fulfilled through the joint R&D efforts of academia and industry, which is driven by the great potential of Ga N-onsilicon technology in improving the efficiency yet at a much reduced manufacturing cost for solid state lighting and power electronics. It is very challenging to grow high quality Ga N on Si substrates because of the huge mismatch in the coefficient of thermal expansion(CTE) and the large mismatch in lattice constant between Ga N and silicon, often causing a micro-crack network and a high density of threading dislocations(TDs) in the Ga N film.Al-composition graded Al Ga N/Al N buffer layers have been utilized to not only build up a compressive strain during the high temperature growth for compensating the tensile stress generated during the cool down, but also filter out the TDs to achieve crack-free high-quality n-Ga N film on Si substrates, with an X-ray rocking curve linewidth below 300 arcsec for both(0002) and(10N12) diffractions. Upon the Ga N-on-Si templates, prior to the deposition of p-Al Ga N and p-Ga N layers, high quality In Ga N/Ga N multiple quantum wells(MQWs) are overgrown with well-engineered V-defects intentionally incorporated to shield the TDs as non-radiative recombination centers and to enhance the hole injection into the MQWs through the via-like structures. The as-grown Ga N-on-Si LED wafers are processed into vertical structure thin film LED chips with a reflective p-electrode and the N-face surface roughened after the removal of the epitaxial Si(111) substrates, to enhance the light extraction efficiency. We have commercialized Ga N-on-Si LEDs with an average efficacy of 150–160 lm/W for 1mm^2 LED chips at an injection current of 350 m A, which have passed the 10000-h LM80 reliability test. The as-produced Ga N-on-Si LEDs featured with a single-side uniform emission and a nearly Lambertian distribution can adopt the wafer-level phosphor coating procedure, and are suitable for directional lighting, camera flash, streetlighting, automotive headlamps, and otherlighting applications.
基金This work was supported by the National Natural Science Foundation of China(Grants No.62174174,61775230,61804162,61874131,62074158,U1601210,61874114,61922001,11634002,61521004,and 61927806)Guangdong Province Key-Area Research and Development Program(Grants No.2019B010130001,2019B090917005,2019B090904002,2019B090909004,2020B010174003,and 2020B010174004)+1 种基金the National Key Research and Development Program of China(Grants No.2016YFB0400100 and 2017YFB0402800)the Science Challenge Project(Grant No.TZ2018003).
文摘The past decades have witnessed a tremendous development of GaN-based power electronic devices grown on Si substrate.This article provides a concise introduction,review,and outlook of the research developments of GaN-on-Si power device technology.The comprehensive review has discussed the crucial issues in the state-of-the-art device technology based on both GaN materials epitaxy including stress control and point defects study,and device fabrication including normally offsolutions like Cascode,trench MIS-gate,and p-GaN gate.Device reliability and other common fabrication issues in GaN high electron mobility transistors(HEMTs)are also discussed.Lastly,we give an outlook on the GaN-on-Si power devices from two aspects,namely high frequency,and high power GaN ICs,and GaN vertical power devices.
基金supported by the National Basic Research Program of China(Grant No.2010CB923200)the National "863" Project of China(GrantNo.2011AA03A101)+2 种基金the Foundation of the Key Technologies R&D Program of Guangdong Province,China(Grant No.2007A010500011)the International Science and Technology Cooperation Program of China(Grant No.2012DFG52260)the National Science Foundation of China-Guangdong Province Jointed Foundation(Grant No.U0834001)
文摘The electrical properties of the structure of GaN grown on an Si (111) substrate with low-temperature (LT) A1N interlayers by metal-organic chemical-vapour deposition are investigated. An abnormal P-type conduction is observed in our GaN-on-Si structure by Hall effect measurement, which is mainly due to the A1 atom diffusing into the Si substrate and acting as an acceptor dopant. Meanwhile, a constant n-type conduction channel is observed in LT-A1N, which causes a conduction-type conversion at low temperature (50 K) and may further influence the electrical behavior of this structure.
基金Project supported by the National Key R&D Program(Nos.2016YFB0400100,2016YFB0400104)the National Natural Science Foundation of China(Nos.61534007,61404156,61522407,61604168,61775230)+7 种基金the Key Frontier Scientific Research Program of the Chinese Academy of Sciences(No.QYZDB-SSW-JSC014)the Science and Technology Service Network Initiative of the Chinese Academy of Sciencesthe Key R&D Program of Jiangsu Province(No.BE2017079)the Natural Science Foundation of Jiangsu Province(No.BK20160401)the China Postdoctoral Science Foundation(No.2016M591944)supported by the Open Fund of the State Key Laboratory of Luminescence and Applications(No.SKLA-2016-01)the Open Fund of the State Key Laboratory on Integrated Optoelectronics(Nos.IOSKL2016KF04,IOSKL2016KF07)the Seed Fund from SINANO,CAS(No.Y5AAQ51001)
文摘This work reports the fabrication of via-thin-film light-emitting diode (via-TF-LED) to improve the light output power (LOP) of blue/white GaN-based LEDs grown on Si (111) substrates. The as-fabricated via-TF-LEDs were featured with a roughened n-GaN surface and the p-GaN surface bonded to a wafer carrier with a silver-based reflective electrode, together with an array of embedded n-type via pillar metal contact from the p-GaN surface etched through the multiple-quantum-wells (MQWs) into the n-GaN layer. When operated at 350 mA, the via-TF- LED gave an enhanced blue LOP by 7.8% and over 3.5 times as compared to the vertical thin-film LED (TF-LED) and the conventional lateral structure LED (LS-LED). After covering with yellow phosphor that converts some blue photons into yellow light, the via-TF-LED emitted an enhanced white luminous flux by 13.5% and over 5 times, as compared with the white TF-LED and the white LS-LED, respectively. The significant LOP improve- ment of the via-TF-LED was attributed to the elimination of light absorption by the Si (111) epitaxial substrate and the finger-like n-electrodes on the roughened emitting surface.