High power 2-μm room-temperature continuous-wave operation of GaSb-based strained quantum-well lasers

A high power GaSb-based laser diode with lasing wavelength at 2 μm was fabricated and optimized. With the optimized epitaxial laser structure, the internal loss and the threshold current density decreased and the internal quantum efficiency increased. For uncoated broad-area lasers, the threshold current density was as low as 144 A/cm2 （72 A/cm^2 per quantum well）, and the slope efficiency was 0.2 W/A. The internal loss was 11 cm^-1 and the internal quantum efficiency was 27.1%. The maximum output power of 357 mW under continuous-wave operation at room temperature was achieved. The electrical and optical properties of the laser diode were improved.

GaSb-based type-Ⅰ quantum well cascade diode lasers emitting at nearly 2-μm wavelength with digitally grown AlGaAsSb gradient layers

We report a GaSb-based type-I quantum well cascade diode laser emitting at nearly 2-μm wavelength.The recycling of carriers is realized by the gradient AlGaAsSb barrier and chirped GaSb/AlSb/InAs electron injector.The growth of quaternary digital alloy with a gradually changed composition by short-period superlattices is introduced in detail in this paper.And the quantum well cascade laser with 100-μm-wide,2-mm-long ridge generates an about continuous-wave output of 0.8 W at room temperature.The characteristic temperature T_(0) is estimated at above 60 K.

2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography

We report a type-I Ga Sb-based laterally coupled distributed-feedback（LC-DFB） laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process. Second-order Bragg gratings are fabricated alongside the ridge waveguide by interference lithography. Index-coupled LC-DFB laser with a cavity of 1500 μm achieves single longitudinal mode continuous-wave operation at 20℃ with side mode suppression ratio（SMSR） as high as 24 dB.The maximum single mode continuous-wave output power is about 10 mW at room temperature（uncoated facet）. A low threshold current density of 230 A/cm^2 is achieved with differential quantum efficiency estimated to be 93 mW/A. The laser shows a good wavelength stability against drive current and working temperature.

High quality 2-μm GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy

The epitaxial growth conditions and performance of a diode-pumped GaSb-based optically pumped semiconductor disk laser(SDL) emitting near 2.0 μm in an external cavity configuration are reported. The high quality epitaxial structure,grown on Te-doped(001) oriented GaSb substrate by molecular beam epitaxy, consists of a distributed Bragg reflector(DBR), a multi-quantum-well gain region, and a window layer. An intra-cavity SiC heat spreader was attached to the gain chip for effective thermal management. A continuous-wave output power of over 1 W operating at 2.03 μm wavelength operating near room temperature was achieved using a 3% output coupler.

Optimizing laser coupling,matter heating,and particle acceleration from solids using multiplexed ultraintense lasers

Realizing the full potential of ultrahigh-intensity lasers for particle and radiation generation will require multi-beam arrangements due to technology limitations.Here,we investigate how to optimize their coupling with solid targets.Experimentally,we show that overlapping two intense lasers in a mirror-like configuration onto a solid with a large preplasma can greatly improve the generation of hot electrons at the target front and ion acceleration at the target backside.The underlying mechanisms are analyzed through multidimensional particle-in-cell simulations,revealing that the self-induced magnetic fields driven by the two laser beams at the target front are susceptible to reconnection,which is one possible mechanism to boost electron energization.In addition,the resistive magnetic field generated during the transport of the hot electrons in the target bulk tends to improve their collimation.Our simulations also indicate that such effects can be further enhanced by overlapping more than two laser beams.

975 nm multimode semiconductor lasers with high-order Bragg diffraction gratings

The 975 nm multimode diode lasers with high-order surface Bragg diffraction gratings have been simulated and calcu-lated using the 2D finite difference time domain(FDTD)algorithm and the scattering matrix method(SMM).The periods and etch depth of the grating parameters have been optimized.A board area laser diode(BA-LD)with high-order diffraction grat-ings has been designed and fabricated.At output powers up to 10.5 W,the measured spectral width of full width at half maxi-mum(FWHM)is less than 0.5 nm.The results demonstrate that the designed high-order surface gratings can effectively nar-row the spectral width of multimode semiconductor lasers at high output power.

Collective coherent emission of electrons in strong laser fields and perspective for hard x-ray lasers

Coherent motion of particles in a plasma can imprint itself on radiation.The recent advent of high-power lasers—allowing the nonlinear inverse Compton-scattering regime to be reached—has opened the possibility of looking at collective effects in laser–plasma interactions.Under certain conditions,the collective interaction of many electrons with a laser pulse can generate coherent radiation in the hard x-ray regime.This perspective paper explains the limitations under which such a regime might be attained.

On the generation of high-quality Nyquist pulses in mode-locked fiber lasers

Nyquist pulses have wide applications in many areas,from electronics to optics.Mode-locked lasers are ideal platforms to generate such pulses.However,how to generate high-quality Nyquist pulses in mode-locked lasers remains elusive.We address this problem by managing different physical effects in mode-locked fiber lasers through extensive numerical simulations.We find that net dispersion,linear loss,gain and filter shaping can affect the quality of Nyquist pulses significantly.We also demonstrate that Nyquist pulses experience similariton shaping due to the nonlinear attractor effect in the gain medium.Our work may contribute to the design of Nyquist pulse sources and enrich the understanding of pulse shaping dynamics in mode-locked lasers.

Gigahertz frequency hopping in an optical phase-locked loop for Raman lasers

Raman lasers are essential in atomic physics,and the development of portable devices has posed requirements for time-division multiplexing of Raman lasers.We demonstrate an innovative gigahertz frequency hopping approach of a slave Raman laser within an optical phase-locked loop(OPLL),which finds practical application in an atomic gravimeter,where the OPLL frequently switches between near-resonance lasers and significantly detuned Raman lasers.The method merges the advantages of rapid and extensive frequency hopping with the OPLL’s inherent low phase noise,and exhibits a versatile range of applications in compact laser systems,promising advancements in portable instruments.

Phase-locked single-mode terahertz quantum cascade lasers array

We demonstrated a scheme of phase-locked terahertz quantum cascade lasers(THz QCLs)array,with a single-mode pulse power of 108 mW at 13 K.The device utilizes a Talbot cavity to achieve phase locking among five ridge lasers with first-order buried distributed feedback(DFB)grating,resulting in nearly five times amplification of the single-mode power.Due to the optimum length of Talbot cavity depends on wavelength,the combination of Talbot cavity with the DFB grating leads to better power amplification than the combination with multimode Fabry-Perot(F-P)cavities.The Talbot cavity facet reflects light back to the ridge array direction and achieves self-imaging in the array,enabling phase-locked operation of ridges.We set the spacing between adjacent elements to be 220μm,much larger than the free-space wavelength,ensuring the operation of the fundamental supermode throughout the laser's dynamic range and obtaining a high-brightness far-field distribution.This scheme provides a new approach for enhancing the single-mode power of THz QCLs.

Generation and regulation of electromagnetic pulses generated by femtosecond lasers interacting with multitargets

Ultrashort and powerful laser interactions with a target generate intense wideband electromagnetic pulses(EMPs).In this study,we report EMPs generated by the interactions between petawatt(30 fs,1.4×10^(20) W/cm^(2))femtosecond(fs)lasers with metal flat,plastic flat,and plastic nanowire-array(NWA)targets.Detailed analyses are conducted on the EMPs in terms of their spatial distribution,time and frequency domains,radiation energy,and protection.The results indicate that EMPs from metal targets exhibit larger amplitudes at varying angles than those generated by other types of targets and are enhanced significantly for NWA targets.Using a plastic target holder and increasing the laser focal spot can significantly decrease the radiation energy of the EMPs.Moreover,the composite shielding materials indicate an effective shielding effect against EMPs.The simulation results show that the NWA targets exert a collimating effect on thermal electrons,which directly affects the distribution of EMPs.This study provides guidance for regulating EMPs by controlling the laser focal spot,target parameters,and target rod material and is beneficial for electromagnetic-shielding design.

Characteristic analysis of 1.06μm long-cavity diode lasers based on asymmetric waveguide structures

In long-cavity edge-emitting diode lasers,longitudinal spatial hole burning(LSHB),two-photon ab⁃sorption(TPA)and free carrier absorption(FCA)are among the key factors that affect the linear increase in out⁃put power at high injection currents.In this paper,a simplified numerical analysis model is proposed for 1.06μm long-cavity diode lasers by combining TPA and FCA losses with one-dimensional(1D)rate equations.The ef⁃fects of LSHB,TPA and FCA on the output characteristics are systematically analyzed,and it is proposed that ad⁃justing the front facet reflectivity and the position of the quantum well(QW)in the waveguide layer can improve the front facet output power.

Optical facet coatings for high-performance LWIR quantum cascade lasers atλ∼8.5μm

We report on the performance improvement of long-wave infrared quantum cascade lasers(LWIR QCLs)by studying and optimizing the anti-reflection(AR)optical facet coating.Compared to the Al2O3 AR coat⁃ing,the Y_(2)O_(3)AR coating exhibits higher catastrophic optical mirror damage(COMD)level,and the optical facet coatings of both material systems have no beam steering effect.A 3-mm-long,9.5-μm-wide buried-heterostruc⁃ture(BH)LWIR QCL ofλ~8.5μm with Y_(2)O_(3)metallic high-reflection(HR)and AR of~0.2%reflectivity coating demonstrates a maximum pulsed peak power of 2.19 W at 298 K,which is 149%higher than that of the uncoated device.For continuous-wave(CW)operation,by optimizing the reflectivity of the Y_(2)O_(3)AR coating,the maximum output power reaches 0.73 W,which is 91%higher than that of the uncoated device.

Single-mode GaSb-based laterally coupled distributed-feedback laser for CO_(2)gas detection

We report on a GaSb-based laterally coupled distributed feedback(LC-DFB)laser with Cr gratings operating at 2004 nm for CO_(2)detection application.Butterfly packaged with single-mode fiber pigtailed,the laser diode operates in the continuous-wave mode in a temperature range from-10℃to 60℃,with a maximum output power of 2 mW and a maximum side-mode suppression ratio over 30 dB.Wavelength-modulated absorption spectroscopy of CO_(2)demonstrates the applicability of the LC-DFB laser to tunable diode laser absorption spectroscopy.Furthermore,the diode junction temperature,which is measured by using the wavelength shift method,exhibits a maximum value of 17℃in the single-mode operation range.

Quantitative Moisture Measurement with a Cavity Ring-down Spectrometer using Telecom Diode Lasers

Moisture measurement is of great needs in semiconductor industry, combustion diagnosis, meteorology, and atmospheric studies. We present an optical hygrometer based on cavity ring-down spectroscopy （CRDS）. By using different absorption lines of H20 in the 1.56 and 1.36 gm regions, we are able to determine the relative concentration （mole fraction） of water vapor from a few percent down to the 10-12 level. The quantitative accuracy is examined by comparing the CRDS hygrometer with a commercial chilled-mirror dew-point meter. The high sensitivity of the CRDS instrument allows a water detection limit of 8 pptv.

Investigation of 980nm Ridge Waveguide Lasers with Current Non-Injection Regions by He Ion Implantaion

The technology of He ion implantation for improving the catastrophic optical damage (COD) level of 980nm semiconductor lasers is introduced.After He ion implantation,p-GaAs obtain higher resistivity than before.About 25μm-long current non-injection regions are introduced near both facets,where the injection current is blocked by high resistivity area.The current non-injection regions can reduce carriers inject to facets,and the rate of the non-radiative recombination are reduced.So the COD level is higher than before.The He ion implantation LDs exhibit no COD failure until the rollover occure at a mean maximum power of 440.5mW.Mean COD level of conventional LDs is given as 407.5mW.Compared to conventional LDs,the mean maximum output power level of He ion implantation LDs is improved by 8%.

GSMBE-Grown InGaAs/InGaAsP Strained Quantum Well Lasers at 1.84 Micron Wavelength

GSMBE grown 1 84 micron wavelength InGaAs/InGaAsP/InP strained quantum well lasers are reported. Lasers with 800 micron long cavity and 40 micron wide planar electrical stripe have been operated under the pulsed regime at room temperature. At 20℃, the threshold current density is 3 8kA/cm 2 and the external different quantum efficiency is 9 3%.

Effect of DBR Geometry on Reflectivity and Spectral Linewidth of DBR Lasers

The linewidths of InGaAs-GaAs-AlGaAs DBR lasers with varied DBR dimensional parameters are measured and analyzed. These lasers were built with different DBR grating lengths and depths in order to explore the effect of the size of the DBR on its coupling coefficient and reflectivity,and hence on the linewidth of the laser diodes. The linewidths were measured by employing a self heterodyne linewidth measurement system. The experimental and calculated data for DBR reflectivity and spectral linewidth are given. The relationship between these data and the dimensions of the DBR is analyzed. Based on this analysis,the effect of the DBR geometry on the linewidth of the lasers is explored. The results give useful information related to the design and fabrication of such DBR lasers.

Lateral Oxidation in Vertical Cavity Surface Emitting Lasers

Lateral oxidation in vertical cavity surface emitting lasers （VCSELs） is described,and its characteristics are investigated.A linear growth law is found for stripe mesas. However, oxide growth （above 435℃ ） follows a nonlinear law for the two geometry mesa structures which we employ in VCSEL. Theoretical analysis indicates that mesa structure geometry influences oxide growth rate at higher temperatures.

Highly-Strained InGaAs/GaAs Single-Quantum-Well Lasers Grown by Molecular Beam Epitaxy

Highly stained InGaAs/GaAs Quantum Wells (QW) are grown by using molecular beam epitaxy.The room-temperature photoluminescence (PL) peak wavelength as long as 1160nm is obtained from QW with the In composition of 38% and the well width of 6 8nm.The full-width at half-maximum of the PL peak is 22meV,indicating a good quality.InGaAs/GaAs QW ridge-waveguide lasers with emission wavelength of 1120nm are demonstrated.For 100-μm-wide ridge-waveguide lasers with a cavity length of 800μm,the kink-free output power up to 200mW is achieved with the slope efficiency of 0 84mW/mA under the continue-wave operation.For 10μm-wide ridge-waveguide lasers,the lowest threshold current density of 450A/cm2 and the characteristic temperature of 90K are obtained.