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Single-mode GaSb-based laterally coupled distributed-feedback laser for CO_(2)gas detection
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作者 韩实现 严进一 +6 位作者 曹春芳 杨锦 杜安天 陈元宇 刘若涛 王海龙 龚谦 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第10期443-447,共5页
We report on a GaSb-based laterally coupled distributed feedback(LC-DFB)laser with Cr gratings operating at 2004 nm for CO_(2)detection application.Butterfly packaged with single-mode fiber pigtailed,the laser diode o... We report on a GaSb-based laterally coupled distributed feedback(LC-DFB)laser with Cr gratings operating at 2004 nm for CO_(2)detection application.Butterfly packaged with single-mode fiber pigtailed,the laser diode operates in the continuous-wave mode in a temperature range from-10℃to 60℃,with a maximum output power of 2 mW and a maximum side-mode suppression ratio over 30 dB.Wavelength-modulated absorption spectroscopy of CO_(2)demonstrates the applicability of the LC-DFB laser to tunable diode laser absorption spectroscopy.Furthermore,the diode junction temperature,which is measured by using the wavelength shift method,exhibits a maximum value of 17℃in the single-mode operation range. 展开更多
关键词 semiconductor lasers quantum wells laser spectroscopy
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Wavelength-tunable organic semiconductor lasers based on elastic distributed feedback gratings
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作者 Chengfang Liu He Lin +6 位作者 Dongzhou Ji Qun Yu Shuoguo Chen Ziming Guo Qian Luo Xu Liu Wenyong Lai 《Journal of Semiconductors》 EI CAS CSCD 2023年第3期68-75,共8页
Wavelength-tunable organic semiconductor lasers based on mechanically stretchable polydimethylsiloxane (PDMS) gratings were developed. The intrinsic stretchability of PDMS was explored to modulate the period of the di... Wavelength-tunable organic semiconductor lasers based on mechanically stretchable polydimethylsiloxane (PDMS) gratings were developed. The intrinsic stretchability of PDMS was explored to modulate the period of the distributed feedback gratings for fine tuning the lasing wavelength. Notably, elastic lasers based on three typical light-emitting molecules show com-parable lasing threshold values analogous to rigid devices and a continuous wavelength tunability of about 10 nm by mechanic-al stretching. In addition, the stretchability provides a simple solution for dynamically tuning the lasing wavelength in a spec-tral range that is challenging to achieve for inorganic counterparts. Our work has provided a simple and efficient method of fab-ricating tunable organic lasers that depend on stretchable distributed feedback gratings, demonstrating a significant step in the advancement of flexible organic optoelectronic devices. 展开更多
关键词 stretchable electronics organic semiconductor lasers elastic lasers distributed feedback(DFB)gratings wavelength tunability
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High quality 2-μm GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy
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作者 Jin-Ming Shang Jian Feng +5 位作者 Cheng-Ao Yang Sheng-Wen Xie Yi Zhang Cun-Zhu Tong Yu Zhang Zhi-Chuan Niu 《Chinese Physics B》 SCIE EI CAS CSCD 2019年第3期175-179,共5页
The epitaxial growth conditions and performance of a diode-pumped GaSb-based optically pumped semiconductor disk laser(SDL) emitting near 2.0 μm in an external cavity configuration are reported. The high quality epit... The epitaxial growth conditions and performance of a diode-pumped GaSb-based optically pumped semiconductor disk laser(SDL) emitting near 2.0 μm in an external cavity configuration are reported. The high quality epitaxial structure,grown on Te-doped(001) oriented GaSb substrate by molecular beam epitaxy, consists of a distributed Bragg reflector(DBR), a multi-quantum-well gain region, and a window layer. An intra-cavity SiC heat spreader was attached to the gain chip for effective thermal management. A continuous-wave output power of over 1 W operating at 2.03 μm wavelength operating near room temperature was achieved using a 3% output coupler. 展开更多
关键词 semiconductor DISK laser GASB MOLECULAR beam EPITAXY
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Measurement of Cavity Loss and Quasi-Fermi-Level Separation for Fabry-Pérot Semiconductor Lasers
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作者 韩春林 刘瑞喜 +2 位作者 国伟华 于丽娟 黄永箴 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2003年第8期789-793,共5页
A fitting process is used to measure the cavity loss and the quasi Fermi level separation for Fabry Pérot semiconductor lasers.From the amplified spontaneous emission (ASE) spectrum,the gain spectrum and sing... A fitting process is used to measure the cavity loss and the quasi Fermi level separation for Fabry Pérot semiconductor lasers.From the amplified spontaneous emission (ASE) spectrum,the gain spectrum and single pass ASE obtained by the Cassidy method are applied in the fitting process.For a 1550nm quantum well InGaAsP ridge waveguide laser,the cavity loss of about ~24cm -1 is obtained. 展开更多
关键词 semiconductor lasers measurement technique cavity loss
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Chaos synchronization in injection-locked semiconductor lasers with optical feedback 被引量:2
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作者 刘玉金 张胜海 钱兴中 《Chinese Physics B》 SCIE EI CAS CSCD 2007年第2期463-467,共5页
Based on the rate equations, we have investigated three types of chaos synchronizations in injection-locked semiconductor lasers with optical feedback. Numerical simulation shows that the synchronization can be realiz... Based on the rate equations, we have investigated three types of chaos synchronizations in injection-locked semiconductor lasers with optical feedback. Numerical simulation shows that the synchronization can be realized by the symmetric or asymmetric laser systems. Also, the influence of parameter mismatches on chaos synchronization is investigated, and the results imply that these two lasers can achieve good synchronization, with smaller tolerance of parameter mismatch existing. 展开更多
关键词 chaos synchronization semiconductor laser optical feedback INJECTION-LOCKED
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Graded doping low internal loss 1060-nm InGaAs/AlGaAs quantum well semiconductor lasers 被引量:2
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作者 谭少阳 翟腾 +3 位作者 张瑞康 陆丹 王圩 吉晨 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第6期374-377,共4页
Internal loss is a key internal parameter for high power 1060-nm InGaAs/A1GaAs semiconductor laser. In this paper, we discuss the origin of internal loss of 1060-nm InGaAs/GaAs quantum welt (QW) AIGaAs separate conf... Internal loss is a key internal parameter for high power 1060-nm InGaAs/A1GaAs semiconductor laser. In this paper, we discuss the origin of internal loss of 1060-nm InGaAs/GaAs quantum welt (QW) AIGaAs separate confinement het- erostructure semiconductor laser, and the method to reduce internal loss. By light doping the n-cladding layer, and stepwise doping the p-cladding layer combined with the expanded waveguide layer, a broad area laser with internal loss of 1/cm is designed and fabricated. Ridge waveguide laser with an output power of 350 mW is obtained. The threshold current and slope efficiency near the threshold current are 20 mA and 0.8 W/A, respectively. 展开更多
关键词 internal loss free carrier absorption semiconductor laser
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Waveguide external cavity narrow linewidth semiconductor lasers 被引量:4
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作者 Chanchan Luo Ruiying Zhang +1 位作者 Bocang Qiu Wei Wang 《Journal of Semiconductors》 EI CAS CSCD 2021年第4期90-97,共8页
Narrow linewidth light source is a prerequisite for high-performance coherent optical communication and sensing.Waveguide-based external cavity narrow linewidth semiconductor lasers(WEC-NLSLs)have become a competitive... Narrow linewidth light source is a prerequisite for high-performance coherent optical communication and sensing.Waveguide-based external cavity narrow linewidth semiconductor lasers(WEC-NLSLs)have become a competitive and attractive candidate for many coherent applications due to their small size,volume,low energy consumption,low cost and the ability to integrate with other optical components.In this paper,we present an overview of WEC-NLSLs from their required technologies to the state-of-the-art progress.Moreover,we highlight the common problems occurring to current WEC-NLSLs and show the possible approaches to resolving the issues.Finally,we present the possible development directions for the next phase and hope this review will be beneficial to the advancements of WEC-NLSLs. 展开更多
关键词 semiconductor laser narrow linewidth waveguide external cavity
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Polarization switching and synchronization of mutually coupled vertical-cavity surface-emitting semiconductor lasers 被引量:1
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作者 张伟利 潘炜 +3 位作者 罗斌 李孝峰 邹喜华 王梦遥 《Chinese Physics B》 SCIE EI CAS CSCD 2007年第7期1996-2002,共7页
Polarization switching (PS) dynamics and synchronization performances of two mutually coupled vertical-cavity surface-emitting lasers (VCSELs) are studied theoretically in this paper. A group of dimensionless rate... Polarization switching (PS) dynamics and synchronization performances of two mutually coupled vertical-cavity surface-emitting lasers (VCSELs) are studied theoretically in this paper. A group of dimensionless rate equations is derived to describe our model. While analysing the PS characteristics, we focus on the effects of coupling rate and frequency detuning regarding different mutual injection types. The results indicate that the x-mode injection defers the occurrence of PS, while the y-mode injection leads the PS to occur at a lower current. Strong enough polarization-selective injection can suppress the PS. Moreover, if frequency detuning is considered, the effects of polarization-selective mutual injection will be weakened. To evaluate the synchronization performance, the correlation coefficients and output dynamics of VCSELs with both pure mode and mixed mode polarizations are given. It is found that performance of complete synchronization is sensitive to the frequency mismatch but it is little affected by mixed mode polarizations, which is opposite to the case of injection-locking synchronization. 展开更多
关键词 vertical-cavity surface-emitting semiconductor laser polarization mutual injection SYNCHRONIZATION
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Analysis of the time domain characteristics of tapered semiconductor lasers 被引量:1
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作者 Desheng Zeng Li Zhong +1 位作者 Suping Liu Xiaoyu Ma 《Journal of Semiconductors》 EI CAS CSCD 2020年第3期49-53,共5页
We use traveling wave coupling theory to investigate the time domain characteristics of tapered semiconductor lasers with DBR gratings.We analyze the influence of the length of second order gratings on the power and s... We use traveling wave coupling theory to investigate the time domain characteristics of tapered semiconductor lasers with DBR gratings.We analyze the influence of the length of second order gratings on the power and spectrum of output light,and optimizing the length of gratings,in order to reduce the mode competition effect in the device,and obtain the high power output light wave with good longitudinal mode characteristics. 展开更多
关键词 tapered semiconductor lasers time domain characteristics DBR gratings mode competition
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Research on quantum well intermixing of 680 nm AlGaInP/GaInP semiconductor lasers induced by composited Si-Si_(3)N_(4) dielectric layer 被引量:3
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作者 Tianjiang He Suping Liu +4 位作者 Wei Li Cong Xiong Nan Lin Li Zhong Xiaoyu Ma 《Journal of Semiconductors》 EI CAS CSCD 2022年第8期46-52,共7页
The optical catastrophic damage that usually occurs at the cavity surface of semiconductor lasers has become the main bottleneck affecting the improvement of laser output power and long-term reliability.To improve the... The optical catastrophic damage that usually occurs at the cavity surface of semiconductor lasers has become the main bottleneck affecting the improvement of laser output power and long-term reliability.To improve the output power of 680 nm AlGaInP/GaInP quantum well red semiconductor lasers,Si-Si_(3)N_(4)composited dielectric layers are used to induce its quantum wells to be intermixed at the cavity surface to make a non-absorption window.Si with a thickness of 100 nm and Si_(3)N_(4)with a thickness of 100 nm were grown on the surface of the epitaxial wafer by magnetron sputtering and PECVD as diffusion source and driving source,respectively.Compared with traditional Si impurity induced quantum well intermixing,this paper realizes the blue shift of 54.8 nm in the nonabsorbent window region at a lower annealing temperature of 600 ℃ and annealing time of 10 min.Under this annealing condition,the wavelength of the gain luminescence region basically does not shift to short wavelength,and the surface morphology of the whole epitaxial wafer remains fine after annealing.The application of this process condition can reduce the difficulty of production and save cost,which provides an effective method for upcoming fabrication. 展开更多
关键词 high power semiconductor laser rapid thermal annealing composited dielectric layer quantum well intermixing optical catastrophic damage nonabsorbent window
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Waveguide Design Optimization for Long Wavelength Semiconductor Lasers with Low Threshold Current and Small Beam Divergence 被引量:3
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作者 Abdulrahman Al-Muhanna Abdullah Alharbi Abdelmajid Salhi 《Journal of Modern Physics》 2011年第4期225-230,共6页
Long wavelength GaSb-based quantum well lasers have been optimized for high coupling efficiency into an optical system. Two approaches were used to reduce the vertical far-field. In the first approach we showed the us... Long wavelength GaSb-based quantum well lasers have been optimized for high coupling efficiency into an optical system. Two approaches were used to reduce the vertical far-field. In the first approach we showed the use of V-shaped Weaker Waveguide in the n-cladding layer dramatically reduces vertical beam divergence without any performance degradation compared to a conventional broad-waveguide laser structure. Starting from a broad waveguide laser structure design which gives low threshold current and a large vertical far-field (VFF), the structure was modified to decrease the VFF while maintaining a low threshold-current density. In a first step the combination of a narrow optical waveguide and reduced refractive index step between the waveguide and the cladding layers reduce the VFF from 67? to 42?. The threshold current density was kept low to a value of ~190 A/cm2 for 1000 × 100 μm2 devices by careful adjustment of the doping profile in the p-type cladding layer. The insertion of a V-Shaped Weaker Waveguide in the n-cladding layer is shown to allow for further reduction of the VFF to a value as low as 35? for better light-coupling efficiency into an optical system without any degradation of the device performance. In the second approach, we showed that the use of a depressed cladding structure design also allows for the reduction of the VFF while maintaining low the threshold current density (210 A/cm2), slightly higher value compare to the first design. 展开更多
关键词 semiconductor laser FAR-FIELD Simulation
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Semiconductor Optical Amplifier and Gain Chip Used in Wavelength Tunable Lasers 被引量:2
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作者 SATO Kenji ZHANG Xiaobo 《ZTE Communications》 2021年第3期81-87,共7页
The design concept of semiconductor optical amplifier(SOA)and gain chip used in wavelength tunable lasers(TL)is discussed in this paper.The design concept is similar to that of a conventional SOA or a laser;however,th... The design concept of semiconductor optical amplifier(SOA)and gain chip used in wavelength tunable lasers(TL)is discussed in this paper.The design concept is similar to that of a conventional SOA or a laser;however,there are a few different points.An SOA in front of the tunable laser should be polarization dependent and has low optical confinement factor.To obtain wide gain bandwidth at the threshold current,the gain chip used in the tunable laser cavity should be something between SOA and fixed-wavelength laser design,while the fixed-wavelength laser has high optical confinement factor.Detailed discussion is given with basic equations and some simulation results on saturation power of the SOA and gain bandwidth of gain chip are shown. 展开更多
关键词 external cavity gain chip saturation power semiconductor optical amplifier tunable laser
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Numerical Simulation of External-Cavity Distributed Feedback Semiconductor Laser
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作者 Tianyu Guan Chaoze Zhang +2 位作者 Yuqin Mao Ligang Huang Tao Zhu 《Optics and Photonics Journal》 2023年第6期109-118,共10页
We propose a theoretical model to describe external-cavity distributed feedback semiconductor lasers and investigate the impact of the number of external feedback points on linewidth and side-mode suppression ratio th... We propose a theoretical model to describe external-cavity distributed feedback semiconductor lasers and investigate the impact of the number of external feedback points on linewidth and side-mode suppression ratio through numerical simulation. The simulation results demonstrate that the linewidth of external-cavity semiconductor lasers can be reduced by increasing the external cavity length and feedback ratio, and adding more external feedback points can further narrow the linewidth and enhance the side mode suppression ratio. This research provides insight into the external cavity distributed feedback mechanism and can guide the design of high-performance external cavity semiconductor lasers. . 展开更多
关键词 External-Cavity Distributed Feedback Linewidth Compression Mul-ti-Point Feedback Narrow-Linewidth laser semiconductor laser
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Synchronization and bidirectional communication without delay line using strong mutually coupled semiconductor lasers
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作者 李光辉 王安帮 +1 位作者 冯野 汪洋 《Chinese Physics B》 SCIE EI CAS CSCD 2010年第7期167-171,共5页
This paper numerically demonstrates synchronization and bidirectional communication without delay line by using two semiconductor lasers with strong mutual injection in a face-to-face configuration. These results show... This paper numerically demonstrates synchronization and bidirectional communication without delay line by using two semiconductor lasers with strong mutual injection in a face-to-face configuration. These results show that both of the two lasers' outputs synchronize with their input chaotic carriers. In addition, simulations demonstrate that this kind of synchronization can be used to realize bidirectional communications without delay line. Further studies indicate that within a small deviation in message amplitudes of two sides (±6%), the message can be extracted with signal-noise-ratio more than 10 dB; and the signal-noise-ratio is extremely sensitive to the message rates mismatch of two sides, which may be used as a key of bidirectional communication. 展开更多
关键词 SYNCHRONIZATION bidirectional communication without delay line semiconductor laser
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Compression of the self-Q-switching in semiconductor disk lasers with single-layer graphene saturable absorbers
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作者 于振华 田金荣 宋晏蓉 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第9期228-231,共4页
We demonstrate the first use of single layer graphene for compressing self-Q-switching pulses in semiconductor disk lasers. The gain region of the semiconductor disk laser used InGaAs quantum wells with a central wave... We demonstrate the first use of single layer graphene for compressing self-Q-switching pulses in semiconductor disk lasers. The gain region of the semiconductor disk laser used InGaAs quantum wells with a central wavelength of 1030 nm. Due to self saturable absorption of the quantum wells, the disk laser emitted at the self-Q-switching state with a pulse width of 13 μs. By introducing the single layer graphene as a saturable absorber into the V-shaped laser cavity, the pulse width of the self-pulse was compressed to 2 μs with a lower pump power of 300 mW. As the pump power was increased, multiple pulses with the pulse width of 1.8 μs appeared. The compression factor was about 7.2. 展开更多
关键词 semiconductor disk laser GRAPHENE compression
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Square microcavity semiconductor lasers
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作者 Yuede Yang Haizhong Weng +2 位作者 Youzeng Hao Jinlong Xiao Yongzhen Huang 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第11期176-185,共10页
Square microcavities, which support whispering-gallery modes with total internal reflections, can be employed as high-quality laser resonators for fabricating compact, low-threshold semiconductor lasers. In this paper... Square microcavities, which support whispering-gallery modes with total internal reflections, can be employed as high-quality laser resonators for fabricating compact, low-threshold semiconductor lasers. In this paper, we review the recent progress of square microcavity semiconductor lasers. The characteristics of confined optical modes in the square microcavities are introduced briefly. Based on the mode properties of the square microcavities, dual-mode lasers with tunable wavelength intervals are realized for generating microwave signals. Furthermore, deformed square microcavity lasers with the sidewalls replaced by circular sides are proposed and experimentally demonstrated to enhance the mode confinement and increase the dual-mode interval to the THz range. In order to further reduce the device size, metal-confined wavelength-scale square cavity lasers are also demonstrated. 展开更多
关键词 square microcavity whispering-gallery modes semiconductor lasers
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Multi-target ranging using an optical reservoir computing approach in the laterally coupled semiconductor lasers with self-feedback
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作者 Dong-Zhou Zhong Zhe Xu +5 位作者 Ya-Lan Hu Ke-Ke Zhao Jin-Bo Zhang Peng Hou Wan-An Deng Jiang-Tao Xi 《Chinese Physics B》 SCIE EI CAS CSCD 2022年第7期309-320,共12页
We utilize three parallel reservoir computers using semiconductor lasers with optical feedback and light injection to model radar probe signals with delays.Three radar probe signals are generated by driving lasers con... We utilize three parallel reservoir computers using semiconductor lasers with optical feedback and light injection to model radar probe signals with delays.Three radar probe signals are generated by driving lasers constructed by a threeelement laser array with self-feedback.The response lasers are implemented also by a three-element lase array with both delay-time feedback and optical injection,which are utilized as nonlinear nodes to realize the reservoirs.We show that each delayed radar probe signal can be predicted well and to synchronize with its corresponding trained reservoir,even when parameter mismatches exist between the response laser array and the driving laser array.Based on this,the three synchronous probe signals are utilized for ranging to three targets,respectively,using Hilbert transform.It is demonstrated that the relative errors for ranging can be very small and less than 0.6%.Our findings show that optical reservoir computing provides an effective way for applications of target ranging. 展开更多
关键词 coupled semiconductor lasers lidar ranging optical reservoir computing chaos synchronization
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Packaging and Performance of 980nm Broad Area Semiconductor Lasers 被引量:1
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作者 XingshengLiu LawrenceC.Hughes MichaelH.Rasmussen Martin H.Hu Venkata A Bhagavatula Ronald W.Davis Sean Coleman Rajaram Bhat Chung-En Zah 《电子与封装》 2006年第3期6-14,共9页
<正>High power broad area semiconductor lasers have found increasing applications in pumping of solid state laser systems and fiber amplifiers, frequency doubling, medical systems and material processing. Packag... <正>High power broad area semiconductor lasers have found increasing applications in pumping of solid state laser systems and fiber amplifiers, frequency doubling, medical systems and material processing. Packaging including the assembly design, process and thermal management, has a significant impact on the optical performance and reliability of a high power broad area laser. In this paper, we introduce the package structures and assembling process of 980nm broad area lasers and report the performances including output power, thermal behavior and far fields.We will report two types of high power broad area laser assemblies. One is a microchannel liquid cooled assembly and the other is a conduction cooled CT-mount assembly .Optical powers of 15W and 10W were achieved from a 980nm broad area laser with a 120μm stripe width in a microchannel liquid cooled assembly and conduction cooled CT-mount assembly, respectively .Furthermore, a high power of 6.5 W out of fiber was demonstrated from a pigtailed, fully packaged butterfly-type module without TEC ( Thermoelectric cooler ).The measurement results showed that thermal management is the key in not only improving output power, but also significantly improving beam divergence and far field distribution. The results also showed that the die attach solder can significant impact the reliability of high power broad area lasers and that indium solder is not suitable for high power laser applications due to electromigration at high current densities and high temperatures. 展开更多
关键词 半导体激光器 封装 性能 电迁移 激光组装 测试
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Studies on Three-electrode Semiconductor Lasers
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作者 SUN Hong-xia LU Hongchang (Southwest Jiaotong University, Chengdu 610031, CHN) 《Semiconductor Photonics and Technology》 CAS 1998年第2期74-77,98,共5页
Using the ray trace method, three-section semiconductor lasers are studied. An analytic expression of output power for the three-section semiconductor lasers is derived for the first time. From this expression, thresh... Using the ray trace method, three-section semiconductor lasers are studied. An analytic expression of output power for the three-section semiconductor lasers is derived for the first time. From this expression, threshold condition is also obtained. 展开更多
关键词 Optical Output Power Ray Method semiconductor laser
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Multielectrode Semiconductor Lasers
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作者 LU Hongchang,SUN Hongxia,LUO Bin,CHEN Jianguo (Southwest Jiaotong University,Chengdu 610031,CHN) 《Semiconductor Photonics and Technology》 CAS 1997年第4期243-247,共5页
Multielectrode semiconductor lasers are studied via the ray method.The expression of the output photon number of N -electrode semiconductor lasers has been derived for the first time.When N =1 or 2,the expressio... Multielectrode semiconductor lasers are studied via the ray method.The expression of the output photon number of N -electrode semiconductor lasers has been derived for the first time.When N =1 or 2,the expression of the output photon number fits in that of one-electrode (general) or two-electrode semiconductor lasers perfectly. 展开更多
关键词 Multielectrode semiconductor lasers Output Photon Number Ray Method
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