Effects of gallium surfactant on AlN thin films by microwave plasma chemical vapor deposition

In this work, AlN films were grown using gallium (Ga) as surfactant on 4° off-axis 4H-SiC substrates via microwave plasma chemical vapor deposition (MPCVD). We have found that AlN growth rate can be greatly improved due to the catalytic effect of trimethyl-gallium (TMGa), but AlN crystal structure and composition are not affected. When the proportion of TMGa in gas phase was low, crystal quality of AlN can be improved and three-dimensional growth mode of AlN was enhanced with the increase of Ga source. When the proportion of TMGa in gas phase was high, two-dimensional growth mode of AlN was presented, with the increase of Ga source results in the deterioration of AlN crystal quality. Finally, employing a two-step growth approach, involving the initial growth of Ga-free AlN nucleation layer followed by Ga-assisted AlN growth, high quality of AlN film with flat surface was obtained and the full width at half maximum (FWHM) values of 415 nm AlN (002) and (102) planes were 465 and 597 arcsec.

Epitaxial growth of ultrathin gallium films on Cd(0001)

Growth and electronic properties of ultrathin Ga films on Cd(0001) are investigated by low-temperature scanning tunneling microscopy(STM) and density functional theory(DFT) calculations. It is found that Ga films exhibit the epitaxial growth with the pseudomorphic 1×1 lattice. The Ga islands deposited at 100 K show a ramified shape due to the suppressed edge diffusion and corner crossing. Furthermore, the majority of Ga islands reveal flat tops and a preferred height of three atomic layers, indicating the electronic growth at low temperature. Annealing to room temperature leads to not only the growth mode transition from electronic growth to conventional Stranski–Krastanov growth, but also the shape transition from ramified islands to smooth compact islands. Scanning tunneling spectroscopy(STS) measurements reveal that the Ga monolayer exhibits metallic behavior. DFT calculations indicate that all the interfacial Ga atoms occupy the energetically favorable hcp-hollow sites of the substrate. The charge density difference analysis demonstrates that the charge transfer from the Cd substrate to the Ga atoms is negligible, and there is weak interaction between Ga atoms and the Cd substrate. These results shall shed important light on fabrication of ultrathin Ga films on metal substrates with novel physical properties.

Soil Profile Concentration Distributions of Aluminum, Gallium, Indium and Thallium across Southeastern Missouri

The soil chemistry of gallium, indium, and thallium is not well defined, particularly with emerging evidence that these elements have toxic properties and may influence food safety. The purpose of this investigation was to estimate the soil concentrations of gallium, indium, and thallium and determine if these elements have a soil chemistry like aluminum and therefore demonstrate significant concentration correlations with aluminum. Twenty-seven soil series were selected, and the elemental concentrations were determined using aqua regia digestion with analytical determination performed using inductively coupled plasma emission-mass spectroscopy. The concentrations of gallium, indium, and thallium generally compared with the known literature. Aluminum-gallium and aluminum-thallium exhibited significant concentration correlations across the soil horizons of the sampled soils. Aluminum, gallium, and thallium did demonstrate concentration increases in soil horizons having illuviation of phyllosilicates, implying these phyllosilicates have adsorption and isomorphic substitution behaviors involving these elements.

Modeling,simulations,and optimizations of gallium oxide on gallium-nitride Schottky barrier diodes

With technology computer-aided design(TCAD)simulation software,we design a new structure of gallium oxide on gallium-nitride Schottky barrier diode(SBD).The parameters of gallium oxide are defined as new material parameters in the material library,and the SBD turn-on and breakdown behavior are simulated.The simulation results reveal that this new structure has a larger turn-on current than Ga2O3 SBD and a larger breakdown voltage than Ga N SBD.Also,to solve the lattice mismatch problem in the real epitaxy,we add a Zn O layer as a transition layer.The simulations show that the device still has good properties after adding this layer.

Extraction-Atomic-Absorption Determination of Gallium (III) with 2-hydroxy-5-T-butylphenol-4’-methoxy-azobenzene

The complexation of gallium with 2-hydroxy-5-T-butylphenol-4’-methoxy-azobenzene (HR) has been studied by atomic absorption and spectrophotometric methods. The optimal conditions for the formation and extraction of the complex were found. The maximum light absorption of the complex in n-butanol is in the range of 450 - 470 nm. The molar absorption coefficient is (3.3 - 4.2)⋅104. The stability constant of the gallium coordination compound in n-butanol is βl = 4.2⋅1010. The developed technique allows to determine the gallium content within n × 10−1 - n × 10−4%. The selective and sensitive technique for the extraction-atomic absorption determination of gallium in soils has been developed.

A review of the most recent progresses of state-of-art gallium oxide power devices

Until very recently, gallium oxide(Ga_2O_3) has aroused more and more interests in the area of power electronics due to its ultra-wide bandgap of 4.5–4.8 eV, estimated critical field of 8 MV/cm and decent intrinsic electron mobility limit of250 cm2/(V·s), yielding a high Baliga's figures-of-merit(FOM) of more than 3000, which is several times higher than GaN and SiC.In addition to its excellent material properties, potential low-cost and large size substrate through melt-grown methodology also endows β-Ga_2O_3 more potential for future low-cost power devices. This article focuses on reviewing the most recent advances ofβ-Ga_2O_3 based power devices. It will be starting with a brief introduction to the material properties of β-Ga_2O_3 and then the growth techniques of its native substrate, followed by the thin film epitaxial growth. The performance of state-of-art β-Ga_2O_3 devices, including diodes and FETs are fully discussed and compared. Finally, potential solutions to the challenges of β-Ga_2O_3 are also discussed and explored.

Review of gallium oxide based field-effect transistors and Schottky barrier diodes

Gallium oxide(Ga_2O_3), a typical ultra wide bandgap semiconductor, with a bandgap of ~4.9 e V, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of 3444, is promising to be used in high-power and high-voltage devices.Recently, a keen interest in employing Ga_2O_3 in power devices has been aroused. Many researches have verified that Ga_2O_3 is an ideal candidate for fabricating power devices. In this review, we summarized the recent progress of field-effect transistors(FETs) and Schottky barrier diodes(SBDs) based on Ga_2O_3, which may provide a guideline for Ga_2O_3 to be preferably used in power devices fabrication.

Review of deep ultraviolet photodetector based on gallium oxide

Ultraviolet(UV) photodetectors(PDs) have drawn great attention in recent years due to their potential application in civil and military fields. Because of its ultrawide bandgap, low cost, strong radiation hardness, and high thermal and chemical stability with high visible-light transparency, Ga_2O_3 is regarded as the most promising candidate for UV detection.Furthermore, the bandgap of Ga_2O_3 is as high as 4.7–4.9 eV, directly corresponding to the solar-blind UV detection band with wavelength less than 280 nm. There is no need of doping in Ga_2O_3 to tune its bandgap, compared to AlGaN, MgZnO,etc, thereby avoiding alloy composition fluctuations and phase separation. At present, solar-blind Ga_2O_3 photodetectors based on single crystal or amorphous Ga_2O_3 are mainly focused on metal–semiconductor–metal and Schottky photodiodes.In this work, the recent achievements of Ga_2O_3 photodetectors are systematically reviewed. The characteristics and performances of different photodetector structures based on single crystal Ga_2O_3 and amorphous Ga_2O_3 thin film are analyzed and compared. Finally, the prospects of Ga_2O_3 UV photodetectors are forecast.

Separation of indium (Ⅲ), gallium (Ⅲ), and zinc (Ⅱ) with Levextrel resin containing di(2-ethylhexyl) phosphoric acid (CL-P204): Part I. Selection of separation conditions

A kind of Levextrel resin separation process was developed for separation ofindium (III), gallium (III), and zinc (II) from aqueous sulfate solution with Levextrel resincontaining di(2-ethylhexyl) phosphoric acid (CL-P 204). The aim of the research is to collectpreliminary results for a pilot-scale production. Properties of adsorbing indium (III), gallium(III), and zinc (II) from sulfate solution with the Levextrel resin were first studied by batchoperation and column operation. The optimum pH, adsorption capacities and concentrations ofstripping agents for indium (III), gallium (III) were tested. The separation order of indium (III),gallium (III), and zinc (II) from sulfate solution with CL-P 204 Levextrel resin was found thatindium (III) could be first separated by adsorbing at the acidity of 1.0 mol/L whereas gallium (III)and zinc (II) could not, and they were adsorbed together by adsorbing at pH =2.8, then separatedfrom each other by stripping with 0.1 and 0.5 mol/L hydrochloric acid, respectively. The recoveriesof three metal ions were all higher than 99 percent. The cyclic properties of this resin are well.

Gallium trichloride-catalyzed conjugate addition of indole and pyrrole to α,β-unsaturated ketones in aqueous media

Michael addition of indole and pyrrole to a variety of α, β-unsaturated ketones was efficiently promoted by a catalytic amount of GaCl3 in aqueous media to afford the corresponding products in good to excellent yields.

Effect of gallium addition on microstructure and properties of Ag-Cu-Zn-Sn alloys＊

The effects of Ga on microstructures and mechanical properties of the cadmium-free silver based brazing filler metals have been investigated. The results indicated that C,a additions had the noticeable effect on the microstructure, especially on the shape of the phases. With the increase of Ga addition, the amount of eutectic structure increased, and the acicular eutectic structure changed into the fine eutectic structure with micro-vermiform and rod-like shape. When the addition of Ga was 3.0 wt. %, none of defects exist in the microstructure of the brazed joint. The tensile strength increased from 382 MPa to 511 MPa with the content of Ga increasing from 0 to 3.0 wt. %.

Hydride vapor phase epitaxy for gallium nitride substrate

Due to the remarkable growth rate compared to another growth methods for gallium nitride(GaN)growth,hydride vapor phase epitaxy(HVPE)is now the only method for mass product GaN substrates.In this review,commercial HVPE systems and the GaN crystals grown by them are demonstrated.This article also illustrates some innovative attempts to develop homebuilt HVPE systems.Finally,the prospects for the further development of HVPE for GaN crystal growth in the future are also discussed.

Recovery of gallium from zinc concentrate by pressure oxygen leaching

Zinc concentrate with high gallium content is one of the main resources of gallium.The gallium presents in the form of isomorphism in tetrahedron coordination with sulfur in sphalerite.The research was to investigate the amenability of zinc concentrate with high gallium to pressure oxygen leaching.The particle size,sulfuric acid concentration,oxygen partial pressure,additive amount,and time of reaction were studied.The extraction yields of gallium and zinc are 86%and 98%,respectively.The optimal condition is 100 g of zinc concentrate with particle size smaller than 38 lm,sulfuric acid concentration150 g L-1,leaching temperature 150℃,leaching time120 min,oxygen partial pressure 0.7 MPa,additive amount of 0.2 wt%.

Preparation, characterization and nonlinear optical properties of colloidal gallium arsenide nanocrystals

GaAs nanocrystals were prepared via a simple mechanical ball milling technique. The prepared GaAs nanocrystals have high purity and could form colloidal ethanol suspension without any surfactant additives. The colloidal GaAs nanocrystal suspension displayed excellent two-photon absorption property over the visible and near-infrared region from 490 nm to 1064 nm, which enables it to become a promising broadband optical limiting material.

Synthesis and purification of trialkyl compounds of gallium and indium

The The research progress in trialkyl compounds of gallium andindium was discussed from two aspect, one was the chemical synthesisof the compounds and the other was the purification of them. Thereare three synthesis routes be- ing reported in the first aspect, i.e.the route staring form pure metal, the route starting from the puremetal trihalides, and the electrochemical route. In the secondaspect, the purifying methods of decomposition-distillation and zonerefining were reviewed.

Tetrahydrofuran Ring Opening with Acyl Chlorides or Anhydrides Catalyzed by Gallium Triiodides: A Novel and Facile Method for the Preparation of Iodo Esters

Tetrahydrofuran ring can be opened with acyl chlorides or anhydrides catalyzed by gallium triiodides to afford iodo esters under mild conditions in good yields.

Leaching of gallium from corundum flue dust using mixed acid solution

In order to extract gallium from a high-silica-content flue dust generated in corundum production,a mixed acid solution of H2SO4 and HF was used for leaching,and test parameters of the leaching process were optimized.Experimental results show that the leaching rate of gallium was only 38%when H2SO4 was used as leaching agent.Composition analysis results of micro areas in this corundum flue dust indicate that the content of gallium in silica-enriched phases was high;this portion of gallium was insoluble in H2SO4 solution.The leaching rate of gallium increased significantly with addition of HF due to corrosion of silica.Effects of reaction time,temperature,and concentrations of HF and H2SO4 on leaching rates of gallium were investigated.The leaching rate of gallium reached 91%when this corundum flue dust was leached in a mixed acid solution of H2SO4 and HF for 4 h,at a temperature of 80°C,with a liquid-to-solid ratio of 5:1(mL/g).The optimal concentrations of H2SO4 and HF in the mixed acid solution were 1.5 and 6.4 mol/L,respectively.

Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

The time and temperature dependence of threshold voltage shift under positive-bias stress（PBS） and the following recovery process are investigated in amorphous indium-gallium-zinc-oxide（a-IGZO） thin-film transistors. It is found that the time dependence of threshold voltage shift can be well described by a stretched exponential equation in which the time constant τ is found to be temperature dependent. Based on Arrhenius plots, an average effective energy barrier Eτ stress= 0.72 eV for the PBS process and an average effective energy barrier Eτ recovery= 0.58 eV for the recovery process are extracted respectively. A charge trapping/detrapping model is used to explain the threshold voltage shift in both the PBS and the recovery process. The influence of gate bias stress on transistor performance is one of the most critical issues for practical device development.

Gallium oxide: promise to provide more efficient life

Despite being the long-time mainstream semiconductor for both logic and power devices, Silicon is now facing its dilemma and limitation of scalability and material potential.Especially for power devices, people are demanding escalating efficiency with higher blocking voltage while its power consumption and heat generation are less. Constrained by its narrow bandgap of 1.14 eV, Silicon only has a critical breakdown field(E_c) of 0.3 MV/cm, yielding a Baliga figureof-merit(BFOM = ε×μ× E_c^3) of unity when normalized to itself. It is hence required that the dominating factor E_c should be as high as possible such that the BFOM will be hundreds or even thousands of times when compared to Silicon so as to minimize the conduction loss. Beta-Gallium Oxide(β-Ga_2O_3) with decent μ of 250 cm2/Vs, ultra-wide bandgap of4.8 eV and high critical E_c of 8 MV/cm, yielding a superior high BFOM of more than 3000. Therefore, system made withβ-Ga_2O_3 can be thinner, lighter and capable of handling more power than the one with Silicon. In addition, low-cost and large size substrate through melt-grown method endows β-Ga_2O_3 more potentials as cost-effective power devices. After resolving the low thermal conductivity issue,unipolar devices made with ultra-wide bandgap β-Ga_2O_3 are promised to make power transition and our life more efficient.

Burst mode enabled ultrafast laser inscription inside gallium arsenide

Ultrafast laser inscription(ULI)inside semiconductors offers new perspectives for 3D monolithic structures to be fabricated and new functionalities to be added in electronic and photonic microdevices.However,important challenges remain because of nonlinear effects such as strong plasma generation that distort the energy delivery at the focal point when exposing these materials to intense infrared light.Up to now,the successful technological demonstrations have primarily concentrated on silicon(Si).In this paper,we target at another important semiconductor:gallium arsenide(GaAs).With nonlinearities higher than those of Si,3D-machining of GaAs with femtosecond pulses becomes even harder.However,we show that the difficulty can be circumvented by burst-mode irradiation.We generate and apply trains of pulses at terahertz repetition rates for efficient pulse-to-pulse accumulation of laser-induced free carriers in the focal region,while avoiding an overdose of prefocal excitations.The superior performance of burst-mode irradiation is confirmed by a comparative study conducted with infrared luminescence microscopy.The results indicate a successful reduction of the plasma density in the prefocal region so that higher pulse energy reaches the focal spot.The same method is applied to identify optimum irradiation conditions considering particular cases such as asymmetric pulse trains and aberrated beams.With 64-pulse trains,we successfully manage to cross the writing threshold providing a solution for ULI inside GaAs.The application potential is finally illustrated with a stealth dicing demonstration by taking benefit of the burst mode.The irradiation method opens wide possibilities for 3D structuring inside GaAs by ULI.