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Layered Ag-graphene films synthesized by Gamma ray irradiation for stable lithium metal ano des in carb on ate-based electrolytes
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作者 Jiaxiang Liu Haoshen Ma +5 位作者 Zhipeng Wen Huiyang Li Jin Yang Nanbiao Pei Peng Zhang Jinbao Zhao 《Journal of Energy Chemistry》 SCIE EI CAS CSCD 2022年第1期354-363,I0010,共11页
Lithium metal batteries are considered as high energy density battery systems with very promising prospects and have bee n widely studied.However,The uncon trollable plating/strippi ng behavior,infinite volume change ... Lithium metal batteries are considered as high energy density battery systems with very promising prospects and have bee n widely studied.However,The uncon trollable plating/strippi ng behavior,infinite volume change and den drites formation of lithium metal anode restrict the applicati on.The unc on trolled n ucleati on of lithium caused by the non uniform multi-physical field distributions,can lead to the undesirable lithium deposition.Herein,a graphene composite uniformly loaded with Ag nano-particles(Ag NPs)is prepared through a facile Gamma ray irradiation method and assembled into self-supported film with layered structure(Ag-rGO film).Whe n such film is used as a lithium metal an ode host,the uncontrolled deposition is converted into a highly nucleation-induced process.On one hand,the Ag NPs distributed between the in terlayers of graphe ne can preferentially induce lithium nu cleati on and en able uniform deposition morphology of lithium between interlayers.On the other hand,the stable layered graphene structure can accommodate volume change,stabilize the interface between anode and electrolyte and inhibit dendrites formation.Therefore,the layered Ag-rGO film as anode host can reach a high Coulombic efficiency over 93.3% for 200 cycle(786 h)at a current density of 1 mA cm^(-2) for 2 mAh cm^(-2) in carbonate-based electrolyte.This work proposes a facile Gamma ray irradiation method to prepare metal/3D-skeleton structure as lithium anode host and demonstrates the potential to regulate the lithium metal deposition behaviors via manipulating the distribution of lithiophilic metal(e.g.Ag)in 3D frameworks.This may offer a practicable thinking for the subsequent design of the lithium metal anode. 展开更多
关键词 Lithium metal anode gamma ray irradiation Ag nano-particles Inductive effect Layered structure Uniform lithium deposition
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Synthesis of New Structures and Substances in Dense Gases H2, D2 and He under Irradiation by Braking 10 MeV y-rays in Cu0.98Be0.02 Pressure Chamber
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作者 R. Wisniewski A. Yu. Didyk 《Journal of Physical Science and Application》 2016年第4期13-21,共9页
High-pressure chambers filled with gaseous hydrogen (HHPC), deuterium (DHPC) and helium (HeHPC) under different initial pressures from about I kbar up to 3 kbar were irradiated with braking γ-rays of threshold ... High-pressure chambers filled with gaseous hydrogen (HHPC), deuterium (DHPC) and helium (HeHPC) under different initial pressures from about I kbar up to 3 kbar were irradiated with braking γ-rays of threshold energy 10 MeV during varying periods of exposure at the electron beam currents 22-24μA. Upon opening of these chambers, a lot of new synthesized structures with unusual element compositions very different from the initial ones were found. The described phenomena agree well with a series of studies by authors carried out under the action of γ-rays on dense gases of hydrogen, deuterium and helium in the presence of chosen metals in the reaction chamber. 展开更多
关键词 Element composition structure gamma ray irradiation H D HE high pressure.
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Impact of the displacement damage in channel and source/drain regions on the DC characteristics degradation in deep-submicron MOSFETs after heavy ion irradiation 被引量:1
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作者 薛守斌 黄如 +5 位作者 黄德涛 王思浩 谭斐 王健 安霞 张兴 《Chinese Physics B》 SCIE EI CAS CSCD 2010年第11期597-603,共7页
This paper mainly reports the permanent impact of displacement damage induced by heavy-ion strikes on the deepsubmicron MOSFETs. Upon the heavy ion track through the device, it can lead to displacement damage, includi... This paper mainly reports the permanent impact of displacement damage induced by heavy-ion strikes on the deepsubmicron MOSFETs. Upon the heavy ion track through the device, it can lead to displacement damage, including the vacancies and the interstitials. As the featured size of device scales down, the damage can change the dopant distribution in the channel and source/drain regions through the generation of radiation-induced defects and thus have significant impacts on their electrical characteristics. The measured results show that the radiation-induced damage can cause DC characteristics degradations including the threshold voltage, subthreshold swing, saturation drain current, transconductanee, etc. The radiation-induced displacement damage may become the dominant issue while it was the secondary concern for the traditional devices after the heavy ion irradiation. The samples are also irradiated by Co- 60 gamma ray for comparison with the heavy ion irradiation results. Corresponding explanations and analysis are discussed. 展开更多
关键词 CMOS devices displacement damage heavy ion irradiation gamma ray irradiation
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