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DESIGN OF TWO-PHASE SINUSOIDAL POWER CLOCK AND CLOCKED TRANSMISSION GATE ADIABATIC LOGIC CIRCUIT 被引量:5
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作者 Wang Pengjun Yu Junjun 《Journal of Electronics(China)》 2007年第2期225-231,共7页
First the research is conducted on the design of the two-phase sinusoidal power clock generator in this paper. Then the design of the new adiabatic logic circuit adopting the two-phase sinusoidal power clocks--Clocked... First the research is conducted on the design of the two-phase sinusoidal power clock generator in this paper. Then the design of the new adiabatic logic circuit adopting the two-phase sinusoidal power clocks--Clocked Transmission Gate Adiabatic Logic (CTGAL) circuit is presented. This circuit makes use of the clocked transmission gates to sample the input signals, then the output loads are charged and discharged in a fully adiabatic manner by using bootstrapped N-Channel Metal Oxide Semiconductor (NMOS) and Complementary Metal Oxide Semiconductor (CMOS) latch structure. Finally, with the parameters of Taiwan Semiconductor Manufacturing Company (TSMC) 0.25um CMOS device, the transient energy consumption of CTGAL, Bootstrap Charge-Recovery Logic (BCRL) and Pass-transistor Adiabatic Logic (PAL) including their clock generators is simulated. The simulation result indicates that CTGAL circuit has the characteristic of remarkably low energy consumption. 展开更多
关键词 Circuit design Two-phase sinusoidal power clock Clock generator Clocked Transmission gate Adiabatic Logic (CTGAL) circuit
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Two-Dimensional Tellurium:Progress,Challenges,and Prospects 被引量:12
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作者 Zhe Shi Rui Cao +8 位作者 Karim Khan Ayesha Khan Tareen Xiaosong Liu Weiyuan Liang Ye Zhang Chunyang Ma Zhinan Guo Xiaoling Luo Han Zhang 《Nano-Micro Letters》 SCIE EI CAS CSCD 2020年第8期82-115,共34页
Since the successful fabrication of two-dimensional(2D)tellurium(Te)in 2017,its fascinating properties including a thickness dependence bandgap,environmental stability,piezoelectric effect,high carrier mobility,and ph... Since the successful fabrication of two-dimensional(2D)tellurium(Te)in 2017,its fascinating properties including a thickness dependence bandgap,environmental stability,piezoelectric effect,high carrier mobility,and photoresponse among others show great potential for various applications.These include photodetectors,field-effect transistors,piezoelectric devices,modulators,and energy harvesting devices.However,as a new member of the 2D material family,much less known is about 2D Te compared to other 2D materials.Motivated by this lack of knowledge,we review the recent progress of research into 2D Te nanoflakes.Firstly,we introduce the background and motivation of this review.Then,the crystal structures and synthesis methods are presented,followed by an introduction to their physical properties and applications.Finally,the challenges and further development directions are summarized.We believe that milestone investigations of 2D Te nanoflakes will emerge soon,which will bring about great industrial revelations in 2D materials-based nanodevice commercialization. 展开更多
关键词 2D materials TELLURIUM PHOTODETECTORS Solar cells Energy harvesting Logic gate and circuits
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A fully on-chip fast-transient NMOS low dropout voltage regulator with quasi floating gate pass element 被引量:2
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作者 Han Wang Chao Gou Kai Luo 《Journal of Semiconductors》 EI CAS CSCD 2017年第4期88-93,共6页
This paper presents a fully on-chip NMOS low-dropout regulator(LDO) for portable applications with quasi floating gate pass element and fast transient response.The quasi floating gate structure makes the gate of the... This paper presents a fully on-chip NMOS low-dropout regulator(LDO) for portable applications with quasi floating gate pass element and fast transient response.The quasi floating gate structure makes the gate of the NMOS transistor only periodically charged or refreshed by the charge pump,which allows the charge pump to be a small economical circuit with small silicon area.In addition,a variable reference circuit is introduced enlarging the dynamic range of error amplifier during load transient.The proposed LDO has been implemented in a 0.35 μm BCD process.From experimental results,the regulator can operate with a minimum dropout voltage of 250 mV at a maximum 1 A load and Iq of 395 μA.Under full-range load current step,the voltage undershoot and overshoot of the proposed LDO are reduced to 50 and 26 mV,respectively. 展开更多
关键词 quasi floating gate variable reference circuit transient response low-dropout regulator(LDO)
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