文中提出一款基于自主设计的尺寸为8mm×8mm的10kV碳化硅(silicon carbide,SiC)门极可关断晶闸管(gate-turn-off thyristor,GTO)单芯片封装的焊接式模块。详细介绍10kV SiC GTO模块的设计与制造工艺,通过对比裸芯片与封装后模块在10...文中提出一款基于自主设计的尺寸为8mm×8mm的10kV碳化硅(silicon carbide,SiC)门极可关断晶闸管(gate-turn-off thyristor,GTO)单芯片封装的焊接式模块。详细介绍10kV SiC GTO模块的设计与制造工艺,通过对比裸芯片与封装后模块在10.5kV阻断电压下的漏电流,验证模块绝缘设计冗余和封装工艺,对模块的动态、静态、极限过流能力、关断增益等性能进行测试并给出初步测试结果。展开更多
近年来,基于宽禁带半导体材料碳化硅(SiC)的高压功率器件迅速发展。在SiC高压功率器件中,门极可关断晶闸管(GTO)具有高阻断电压、大电流、快速关断、低正向导通压降以及耐高温等优点。文章主要阐述了SiC GTO在衬底材料、外延材料、载流...近年来,基于宽禁带半导体材料碳化硅(SiC)的高压功率器件迅速发展。在SiC高压功率器件中,门极可关断晶闸管(GTO)具有高阻断电压、大电流、快速关断、低正向导通压降以及耐高温等优点。文章主要阐述了SiC GTO在衬底材料、外延材料、载流子寿命和阻断电压等方面近十几年的发展历程和现状;介绍了具有改良SiC GTO开关特性的碳化硅发射极关断晶闸管(SiC ETO)的特性及其结构和原理;分析了6 500 V SiC ETO的正向导通特性和阻断特性,并通过实验验证了其快速关断特性。最后从器件及其应用的角度提出了SiC GTO晶闸管技术未来发展的方向。展开更多
An ultra-high voltage 4H-silicon carbide(Si C) gate turn-off(GTO) thyristor for low switching time is proposed and analyzed by numerical simulation. It features a double epitaxial p-base in which an extra electrical f...An ultra-high voltage 4H-silicon carbide(Si C) gate turn-off(GTO) thyristor for low switching time is proposed and analyzed by numerical simulation. It features a double epitaxial p-base in which an extra electrical field is induced to enhance the transportation of the electrons in the thin p-base and reduce recombination. As a result, the turn-on characteristics are improved. What is more, to obtain a low turn-off loss, an alternating p^+/n^+region formed in the backside acts as the anode in the GTO thyristor. Consequently, another path formed by the reverse-biased n^+–p junction accelerates the fast removal of excess electrons during turn-off. This work demonstrates that the turn-on time and turn-off time of the new structure are reduced to 37 ns and 783.1 ns, respectively, under a bus voltage of 8000 V and load current of 100 A/cm^2.展开更多
文摘文中提出一款基于自主设计的尺寸为8mm×8mm的10kV碳化硅(silicon carbide,SiC)门极可关断晶闸管(gate-turn-off thyristor,GTO)单芯片封装的焊接式模块。详细介绍10kV SiC GTO模块的设计与制造工艺,通过对比裸芯片与封装后模块在10.5kV阻断电压下的漏电流,验证模块绝缘设计冗余和封装工艺,对模块的动态、静态、极限过流能力、关断增益等性能进行测试并给出初步测试结果。
文摘近年来,基于宽禁带半导体材料碳化硅(SiC)的高压功率器件迅速发展。在SiC高压功率器件中,门极可关断晶闸管(GTO)具有高阻断电压、大电流、快速关断、低正向导通压降以及耐高温等优点。文章主要阐述了SiC GTO在衬底材料、外延材料、载流子寿命和阻断电压等方面近十几年的发展历程和现状;介绍了具有改良SiC GTO开关特性的碳化硅发射极关断晶闸管(SiC ETO)的特性及其结构和原理;分析了6 500 V SiC ETO的正向导通特性和阻断特性,并通过实验验证了其快速关断特性。最后从器件及其应用的角度提出了SiC GTO晶闸管技术未来发展的方向。
基金Project supported by the National Natural Science Foundation of China(Grant No.51677149)
文摘An ultra-high voltage 4H-silicon carbide(Si C) gate turn-off(GTO) thyristor for low switching time is proposed and analyzed by numerical simulation. It features a double epitaxial p-base in which an extra electrical field is induced to enhance the transportation of the electrons in the thin p-base and reduce recombination. As a result, the turn-on characteristics are improved. What is more, to obtain a low turn-off loss, an alternating p^+/n^+region formed in the backside acts as the anode in the GTO thyristor. Consequently, another path formed by the reverse-biased n^+–p junction accelerates the fast removal of excess electrons during turn-off. This work demonstrates that the turn-on time and turn-off time of the new structure are reduced to 37 ns and 783.1 ns, respectively, under a bus voltage of 8000 V and load current of 100 A/cm^2.
