Low pressure chemical vapor deposition(LPCVD) is one of the most important processes during semiconductor manufacturing.However,the spatial distribution of internal temperature and extremely few samples makes it hard ...Low pressure chemical vapor deposition(LPCVD) is one of the most important processes during semiconductor manufacturing.However,the spatial distribution of internal temperature and extremely few samples makes it hard to build a good-quality model of this batch process.Besides,due to the properties of this process,the reliability of the model must be taken into consideration when optimizing the MVs.In this work,an optimal design strategy based on the self-learning Gaussian process model(GPM) is proposed to control this kind of spatial batch process.The GPM is utilized as the internal model to predict the thicknesses of thin films on all spatial-distributed wafers using the limited data.Unlike the conventional model based design,the uncertainties of predictions provided by GPM are taken into consideration to guide the optimal design of manipulated variables so that the designing can be more prudent Besides,the GPM is also actively enhanced using as little data as possible based on the predictive uncertainties.The effectiveness of the proposed strategy is successfully demonstrated in an LPCVD process.展开更多
In this paper, we study optimal recovery (reconstruction) of functions on the sphere in the average case setting. We obtain the asymptotic orders of average sampling numbers of a Sobolev space on the sphere with a G...In this paper, we study optimal recovery (reconstruction) of functions on the sphere in the average case setting. We obtain the asymptotic orders of average sampling numbers of a Sobolev space on the sphere with a Gaussian measure in the Lq (S^d-1) metric for 1 ≤ q ≤ ∞, and show that some worst-case asymptotically optimal algorithms are also asymptotically optimal in the average case setting in the Lq (S^d-1) metric for 1 ≤ q ≤ ∞.展开更多
基金Supported by the National High Technology Research and Development Program of China(2014AA041803)the National Natural Science Foundation of China(61320106009)
文摘Low pressure chemical vapor deposition(LPCVD) is one of the most important processes during semiconductor manufacturing.However,the spatial distribution of internal temperature and extremely few samples makes it hard to build a good-quality model of this batch process.Besides,due to the properties of this process,the reliability of the model must be taken into consideration when optimizing the MVs.In this work,an optimal design strategy based on the self-learning Gaussian process model(GPM) is proposed to control this kind of spatial batch process.The GPM is utilized as the internal model to predict the thicknesses of thin films on all spatial-distributed wafers using the limited data.Unlike the conventional model based design,the uncertainties of predictions provided by GPM are taken into consideration to guide the optimal design of manipulated variables so that the designing can be more prudent Besides,the GPM is also actively enhanced using as little data as possible based on the predictive uncertainties.The effectiveness of the proposed strategy is successfully demonstrated in an LPCVD process.
基金supported by the National Natural Science Foundation of China(No.11426179)the National Natural Science Foundation of China(Nos.10871132,11271263)+4 种基金the Key Scientific Research Fund of Xihua University(No.z1312624)the Foundation of Sichuan Educational Committee(No.14ZA0112)the Preeminent Youth Fund for School of Science in Xihua Universitythe Beijing Natural Science Foundation(No.1132001)BCMIIS
文摘In this paper, we study optimal recovery (reconstruction) of functions on the sphere in the average case setting. We obtain the asymptotic orders of average sampling numbers of a Sobolev space on the sphere with a Gaussian measure in the Lq (S^d-1) metric for 1 ≤ q ≤ ∞, and show that some worst-case asymptotically optimal algorithms are also asymptotically optimal in the average case setting in the Lq (S^d-1) metric for 1 ≤ q ≤ ∞.