采用溶胶-凝胶法制备出Y_(2-2 x)MgTiO_(6)∶2 x Eu^(3+)(YMT∶2 x Eu^(3+),0≤x≤0.11)新型红色荧光粉。通过X射线衍射仪(XRD)检测样品的纯度,结果显示YMT∶Eu^(3+)样品属于单斜晶系,空间群为P21/n,无其他杂相。扫描电子显微镜(SEM)照...采用溶胶-凝胶法制备出Y_(2-2 x)MgTiO_(6)∶2 x Eu^(3+)(YMT∶2 x Eu^(3+),0≤x≤0.11)新型红色荧光粉。通过X射线衍射仪(XRD)检测样品的纯度,结果显示YMT∶Eu^(3+)样品属于单斜晶系,空间群为P21/n,无其他杂相。扫描电子显微镜(SEM)照片显示荧光粉为2μm的不规则颗粒。当激发波长为264 nm时,发射光谱出现四个尖锐的发射峰,分别位于591(^(5)D_(0)→^(7)F_(1))、619(^(5)D_(0)→^(7)F_(2))、657(^(5)D_(0)→^(7)F_(3))和693 nm(^(5)D_(0)→^(7)F_(4))。Eu^(3+)离子之间能量传递为电偶极子-电偶极子(d-d)相互作用。YMT∶0.14Eu^(3+)荧光粉的CIE色度坐标为(0.645,0.332),与红光标准色坐标(0.67,0.33)非常接近。变温PL光谱及热激活能计算结果显示荧光粉具有一定的热稳定性,因此YMT∶Eu^(3+)是一种具有潜在应用价值的LED红色荧光粉。展开更多
Gd 2O 3∶Eu 3+ phosphors were prepared by urea homogeneous precipitation with different surfactant and sol-gel method. XRD patterns show that all the obtained samples are in cubic Gd 2O 3, and the results of FTIR...Gd 2O 3∶Eu 3+ phosphors were prepared by urea homogeneous precipitation with different surfactant and sol-gel method. XRD patterns show that all the obtained samples are in cubic Gd 2O 3, and the results of FTIR and fluorescent spectra conformed that OP is a good surfactant for preparing the Gd 2O 3∶Eu 3+ phosphors. The SEM photographs show that the particles prepared by urea homogeneous precipitation method are all spherical and well-dispersed, and grain morphology can be controlled by different surfactant. XRD and SEM indicate that the particle sizes prepared by sol-gel method are in the range of 5～30 nm, and the grain sizes increase with increasing of heated temperatures. Luminescence spectra indicat that the main emission peaks of all samples are at 610 nm, the intensities are different from samples prepared with different surfactant and the luminescence intensities increase with increasing of annealed temperatures.展开更多
Physical vapor deposition(PVD)can be used to produce high-quality Gd_(2)O_(3)-doped CeO2(GDC)films.Among various PVD methods,reactive sputtering provides unique benefits,such as high deposition rates and easy upscalin...Physical vapor deposition(PVD)can be used to produce high-quality Gd_(2)O_(3)-doped CeO2(GDC)films.Among various PVD methods,reactive sputtering provides unique benefits,such as high deposition rates and easy upscaling for industrial applications.GDC thin films were successfully fabricated through reactive sputtering using a Gd_(0.2)Ce_(0.8)(at%)metallic target,and their application in solid oxide fuel cells,such as buffer layers between yttria-stabilized zirconia(YSZ)/La0.6Sr0.4Co0.2Fe0.8O_(3−δ)and as sublayers in the steel/coating system,was evaluated.First,the direct current(DC)reactive-sputtering behavior of the GdCe metallic target was determined.Then,the GDC films were deposited on NiO-YSZ/YSZ half-cells to investigate the influence of oxygen flow rate on the quality of annealed GDC films.The results demonstrated that reactive sputtering can be used to prepare thin and dense GDC buffer layers without high-temperature sintering.Furthermore,the cells with a sputtered GDC buffer layer showed better electrochemical performance than those with a screen-printed GDC buffer layer.In addition,the insertion of a GDC sublayer between the SUS441 interconnects and the Mn-Co spinel coatings contributed to the reduction of the oxidation rate for SUS441 at operating temperatures,according to the area-specific resistance tests.展开更多
文摘采用溶胶-凝胶法制备出Y_(2-2 x)MgTiO_(6)∶2 x Eu^(3+)(YMT∶2 x Eu^(3+),0≤x≤0.11)新型红色荧光粉。通过X射线衍射仪(XRD)检测样品的纯度,结果显示YMT∶Eu^(3+)样品属于单斜晶系,空间群为P21/n,无其他杂相。扫描电子显微镜(SEM)照片显示荧光粉为2μm的不规则颗粒。当激发波长为264 nm时,发射光谱出现四个尖锐的发射峰,分别位于591(^(5)D_(0)→^(7)F_(1))、619(^(5)D_(0)→^(7)F_(2))、657(^(5)D_(0)→^(7)F_(3))和693 nm(^(5)D_(0)→^(7)F_(4))。Eu^(3+)离子之间能量传递为电偶极子-电偶极子(d-d)相互作用。YMT∶0.14Eu^(3+)荧光粉的CIE色度坐标为(0.645,0.332),与红光标准色坐标(0.67,0.33)非常接近。变温PL光谱及热激活能计算结果显示荧光粉具有一定的热稳定性,因此YMT∶Eu^(3+)是一种具有潜在应用价值的LED红色荧光粉。
文摘Gd 2O 3∶Eu 3+ phosphors were prepared by urea homogeneous precipitation with different surfactant and sol-gel method. XRD patterns show that all the obtained samples are in cubic Gd 2O 3, and the results of FTIR and fluorescent spectra conformed that OP is a good surfactant for preparing the Gd 2O 3∶Eu 3+ phosphors. The SEM photographs show that the particles prepared by urea homogeneous precipitation method are all spherical and well-dispersed, and grain morphology can be controlled by different surfactant. XRD and SEM indicate that the particle sizes prepared by sol-gel method are in the range of 5～30 nm, and the grain sizes increase with increasing of heated temperatures. Luminescence spectra indicat that the main emission peaks of all samples are at 610 nm, the intensities are different from samples prepared with different surfactant and the luminescence intensities increase with increasing of annealed temperatures.
基金financially supported by the National Key R&D Program of China (No. 2018YFB1502203-1)the Guangdong Basic and Applied Basic Research Foundation (No. 2021B1515120087)the Stable Supporting Fund of Shenzhen, China (No. GXWD20201230155427003-202007 28114835006)
文摘Physical vapor deposition(PVD)can be used to produce high-quality Gd_(2)O_(3)-doped CeO2(GDC)films.Among various PVD methods,reactive sputtering provides unique benefits,such as high deposition rates and easy upscaling for industrial applications.GDC thin films were successfully fabricated through reactive sputtering using a Gd_(0.2)Ce_(0.8)(at%)metallic target,and their application in solid oxide fuel cells,such as buffer layers between yttria-stabilized zirconia(YSZ)/La0.6Sr0.4Co0.2Fe0.8O_(3−δ)and as sublayers in the steel/coating system,was evaluated.First,the direct current(DC)reactive-sputtering behavior of the GdCe metallic target was determined.Then,the GDC films were deposited on NiO-YSZ/YSZ half-cells to investigate the influence of oxygen flow rate on the quality of annealed GDC films.The results demonstrated that reactive sputtering can be used to prepare thin and dense GDC buffer layers without high-temperature sintering.Furthermore,the cells with a sputtered GDC buffer layer showed better electrochemical performance than those with a screen-printed GDC buffer layer.In addition,the insertion of a GDC sublayer between the SUS441 interconnects and the Mn-Co spinel coatings contributed to the reduction of the oxidation rate for SUS441 at operating temperatures,according to the area-specific resistance tests.
