4 mol.% Y203 stabilized ZrO2 （YSZ） doped with various quantifies of Gd203 （G-YSZ） ceramic comings were synthesized by electrophoretic deposition method, and followed by vacuum sintering and isothermally annealing ...4 mol.% Y203 stabilized ZrO2 （YSZ） doped with various quantifies of Gd203 （G-YSZ） ceramic comings were synthesized by electrophoretic deposition method, and followed by vacuum sintering and isothermally annealing at 1000 ℃ for different durations. X-ray diffraction （XRD） was used to investigate their phase composition. Scanning electron microscopy （SEM） was employed to examine their microstructure, while energy dispersive X-ray spectrometer （EDS） was used to assess composition of the composite coatings. The results indicated that YSZ coating was composed of tetragonal and monoclinic phase after vacuum sintefing at 1000 ~C for 2 h under vacuum （〈103 Pa）. G-YSZ composite coatings were composed of tetmgonal, monoclinic phase and a small amount of Gd2Zr207 phase after vacuum sintering at 1000 ℃ for 2 h, whereas the content ofmonoclinic phase in G-YSZ composite coatings in- creased with increasing Gd203 concentration. It was found that G-YSZ composite coatings were composed of tetragonal ZrO2 phase, monoclinic ZrO2 phase and cubic phase, whereas Gd2Zr207 phase disappeared, after G-YSZ composite coatings were isothermally annealed at 1000 ℃ in air for 100 h. A detailed description of the results and their discussion was presented in the paper.展开更多
The GHO （Gd2O3-doped HfO2） films were epitaxially grown on Ge （001） substrates adopting cube-on-cube mode with zero interface layer using pulsed laser deposition （PLD）. Reflection high-energy electron diffracti...The GHO （Gd2O3-doped HfO2） films were epitaxially grown on Ge （001） substrates adopting cube-on-cube mode with zero interface layer using pulsed laser deposition （PLD）. Reflection high-energy electron diffraction （RHEED） and high-resolution transmission electron microscopy （HRTEM） observation revealed a sharp interface of GHO/Ge and orientation relationship corre-sponding to （001）GHO//（001）Ge and [011] GHO//[011]Ge. The band offset for GHO/Ge stack was evaluated to be 3.92 eV for va-lence band and 1.38 eV for conduction band by X-ray photoelectron spectrum. Small equivalent oxide thickness （0.49 nm） and inter-face state density （7×1011 cm-2） were achieved from Au/Ti/GHO/Ge/Al capacitors.展开更多
基金Project supported by Shanghai Municipal Developing Foundation of Science and Technology (0852nm01400)National Training Programs of Innovation for Undergraduates (201210856022)Science and Technology Key Fund Project of Shanghai University of Engi-neering Science (2011XZ07) for financial support
文摘4 mol.% Y203 stabilized ZrO2 （YSZ） doped with various quantifies of Gd203 （G-YSZ） ceramic comings were synthesized by electrophoretic deposition method, and followed by vacuum sintering and isothermally annealing at 1000 ℃ for different durations. X-ray diffraction （XRD） was used to investigate their phase composition. Scanning electron microscopy （SEM） was employed to examine their microstructure, while energy dispersive X-ray spectrometer （EDS） was used to assess composition of the composite coatings. The results indicated that YSZ coating was composed of tetragonal and monoclinic phase after vacuum sintefing at 1000 ~C for 2 h under vacuum （〈103 Pa）. G-YSZ composite coatings were composed of tetmgonal, monoclinic phase and a small amount of Gd2Zr207 phase after vacuum sintering at 1000 ℃ for 2 h, whereas the content ofmonoclinic phase in G-YSZ composite coatings in- creased with increasing Gd203 concentration. It was found that G-YSZ composite coatings were composed of tetragonal ZrO2 phase, monoclinic ZrO2 phase and cubic phase, whereas Gd2Zr207 phase disappeared, after G-YSZ composite coatings were isothermally annealed at 1000 ℃ in air for 100 h. A detailed description of the results and their discussion was presented in the paper.
基金supported by National Natural Science Foundation of China(50932001)National Science and Technology Major Projects(2009ZX02039-005,51102020,51202013)
文摘The GHO （Gd2O3-doped HfO2） films were epitaxially grown on Ge （001） substrates adopting cube-on-cube mode with zero interface layer using pulsed laser deposition （PLD）. Reflection high-energy electron diffraction （RHEED） and high-resolution transmission electron microscopy （HRTEM） observation revealed a sharp interface of GHO/Ge and orientation relationship corre-sponding to （001）GHO//（001）Ge and [011] GHO//[011]Ge. The band offset for GHO/Ge stack was evaluated to be 3.92 eV for va-lence band and 1.38 eV for conduction band by X-ray photoelectron spectrum. Small equivalent oxide thickness （0.49 nm） and inter-face state density （7×1011 cm-2） were achieved from Au/Ti/GHO/Ge/Al capacitors.
