Nonmonotonic anomalous Hall effect and anisotropic magnetoresistance in SrRuO_(3)/PbZr_(0.52)Ti_(0.48)O_(3)heterostructures

We fabricate SrRuO_(3)/PbZr_(0.52)Ti_(0.48)O_(3)heterostructures each with an in-plane tensile-strained SrRuO_(3)layer and investigate the effect of an applied electric field on anomalous Hall effect.The four-fold symmetry of anisotropic magnetoresistance and the nonmonotonic variation of anomalous Hall resistivity are observed.By applying positive electric field or negative electric field,the intersecting hump-like feature is suppressed or enhanced,respectively.The sign and magnitude of the anomalous Hall conductivity can be effectively controlled with an electric field under a high magnetic field.The electric-field-modulated anomalous Hall effect is associated with the magnetization rotation in SrRuO_(3).The experimental results are helpful in modulating the magnetization rotation in spintronic devices based on SrRuO_(3)heterostructures.

Effect of thermal deformation on giant magnetoresistance of flexible spin valves grown on polyvinylidene fluoride membranes

We fabricated flexible spin valves on polyvinylidene fluoride（PVDF） membranes and investigated the influence of thermal deformation of substrates on the giant magnetoresistance（GMR） behaviors. The large magnetostrictive Fe_（81）Ga_（19）（Fe Ga） alloy and the low magnetostrictive Fe_（19）Ni_（81）（Fe Ni） alloy were selected as the free and pinned ferromagnetic layers.In addition, the exchange bias（EB） of the pinned layer was set along the different thermal deformation axes α_（31） or α_（32） of PVDF. The GMR ratio of the reference spin valves grown on Si intrinsically increases with lowering temperature due to an enhancement of spontaneous magnetization. For flexible spin valves, when decreasing temperature, the anisotropic thermal deformation of PVDF produces a uniaxial anisotropy along the α_（32） direction, which changes the distribution of magnetic domains. As a result, the GMR ratio at low temperature for spin valves with EB α_（32）becomes close to that on Si, but for spin valves with EB α_（31）is far away from that on Si. This thermal effect on GMR behaviors is more significant when using magnetostrictive Fe Ga as the free layer.

Giant Magnetoresistance Effect of [bcc-Fe(M)/Cu](M=Co,Ni) Multilayers

GMR effect of multilayers of bcc-Fe(M)(M=Co, Ni) alloy and Cu layers has been investigated. The maximum MR ratio is found at 1.1 nm Fe(Co) and 1.3～1.4 nm Cu layer thickness in [Fe(Co)/CuJ, and at 1.6 nm Fe(Ni) and 1.4 nm Cu layer thickness in [Fe(Ni)/Cu]. Under the optimum annealing condition, the MR ratio increases up to 50% and 38% for Fe(Co) and Fe(Ni) systems, respectively. The origin of the increase of GMR is discussed, taking the progress of preferred orientation of Fe(Co)[100] or Fe(Ni)[100] by anneahng into account.

Effect of sub-layer thickness on magnetic and giant magnetoresistance properties of Ni–Fe/Cu/Co/Cu multilayered nanowire arrays

Ni-Fe/Cu/Co/Cu multilayered nanowire arrays were electrodeposited into anodic aluminum oxide template by using dual-bath method at room temperature. Scanning electron microscopy and transmission electron microscopy were used to characterize the morphology and structure of the multilayered nanowire arrays. Vibrating sample magnetometer and physical property measurement system were used to measure their magnetic and giant magnetoresistance （GMR） properties. The effect of sub-layer thickness on the magnetic and GMR properties was investigated. The results indicate that magnetic properties of electmdeposited nanowires are not affected obviously by Cu layer thickness, while magnetic layers （Ni-Fe and Co layers） have significant influence. In addition, GMR ratio presents an oscillatory behavior as Cu layer thickness changes. The magnetic and GMR properties of the multilayered nanowire arrays are optimum at room temperature for the material structure of Ni-Fe （25 nm）/Cu （15 nm）/Co （25 nm）/Cu （15 nm） with 30 deposition cycles.

High Sensitivity Biomolecular Recognition Device Based on Giant Magnetoresistance Effect

The structure and microfabrication,the detecting theory and the way of biomolecular recognition device based on giant magnetoresistance(GMR) effect are introduced,also the signal detecting and processing instrumentation are presented. Here the GMR biosensor was fabricated with magnetic tunnel junction(MJT) material.The biomolecular recognition device contains an array of MJT sensors,single MJT sensor size is 10μm×20μm,tunneling magnetoresistance ratio(TMR) at room temperature is 52.2%,the typical values of junction resistance-area product Rs is 2.6 kΩμm^2,detecting sensitivity of this system is about 8×10^(-4) A·m^(-1).Bioadaptation layer of this device was fabricated with PDMS the thickness of which is less than 100 nm.

Giant Magneto-impedance Effect in Composite Wires with Different Core Layer

Composite structure materials were potential sensing elements for magnetic sensors due to Giant magnetoimpedance(GMI) effect. Two kinds of composite wires with different magnetic/non-magnetic structures were fabricated by using electroless deposition methods and the magnetoimpedance properties were investigated. The maximum GMI ratio of 114% was acquired at 60 MHz in the composite wires with a ferromagnetic core, whereas, 116% of maximum GMI ratio was found in the composite wires with a conductive core at low frequency of 600 k Hz. These results exhibit that the GMI ratio reaches the maximum when magnetoresistance ratio ?R/R and magnetoinductance ratio ?X/X make the comparative contributions to the total magnetoimpedance(MI). The obvious GMI effect obtained in the composite wires with conductive core frequency may provide a candidate for applications in magnetic sensors, especially at low frequencies.

Anisotropic Magnetoresistance Effect in Amorphous and Nanocrystalline Fe(Cu,Nb)-Si-B Alloys

The magnetoresistance effect and magnetic properties in amorphous and nanocrystalline Fe(Cu, Nb)-Si-B ribbons have been investigated, it was observed that the anisotropic magnetoresistance (AMR) of nanocrystalline alloy is much smaller than that of amorphous alloy, Indicating that the anisotropy of nanocrystalline alloy becomes smaller after crystallizing, and the smallest AMR is coincident with the excellent soft magnetic characteristics. It is believed that the smaller magnetic crystalline anisotropy is the origin of the excellent soft magnetic characteristics of nanocrystalline alloy.

Non-Stoichiometry Effects on the Extreme Magnetoresistance in Weyl Semimetal WTe2

Non-stoiehiometry effect on the extreme magnetoresistanee is systematically investigated for the Weyl semimetal WTe2. Magnetoresistance and Hall resistivity are measured for the as-grown samples with a slight difference in Te vacancies and the annealed samples with increased Te vacancies. The fits to a two-band model show that the magnetoresistanee is strongly dependent on the residual resistivity ratio （i.e., the degree of non-stoichiometry）, which is eventually understood in terms of electron doping that not only breaks the balance between electron-type and hole-type carrier densities, but also reduces the average carrier mobility. Thus the compensation effect and ultrahigh mobility are probably the main driving force of the extreme magnetoresistance in WTe2.

Giant Magneto-Impedance Effect in Fe_(96-x)B_4 (x=7 or 10) Nanocrystalline Ribbons

The total ribbon voltage of as-quenched and annealed Fe96-xZr_xB_4 (x=7 or 10) ribbons has been measured as a function of applied dc field and drive current frequency. The experimental results show that both samples exist the optimum annealing temperature and optimum frequency at which the relative change in ribbon voltage is strongest, and the sensitivity of the magnetic response of the annealed Fe_89Zr_7B_4 ribbon is two order of magnitude larger than that of the annealed Fe_86Zr_10 B4 ribbon. The effect of magnetic properties and structural characteristics on giant magneto-impedance was discussed.

Giant Volume Magnetostriction Caused by Itinerant Electron Metamagnetic Transition and Pronounced Invar Effects in La(Fe_xSi_(1-x))_(13) Compounds

A first-order itinerant electron metamagnetic (IEM) transition above the Curie temperature Tc for ferromagnetic La(Fe_xSi_1-x)13 compounds has been confirmed by applying magnetic field. The volume change just above T_C for x=0.88 is huge of about 1.5%, which is caused by a large magnetic moment induced by the IEM transition. These compounds have a possibility for practical applications as giant magnetostrictive materials. Pronounced Invar effects bring about a negative thermal expansion below TC, closely correlated with the negative mode-mode coupling among spin fluctuations.

Spin-valley-dependent transport and giant tunneling magnetoresistance in silicene with periodic electromagnetic modulations

The transport property of electrons tunneling through arrays of magnetic and electric barriers is studied in silicene. In the tunneling transmission spectrum, the spin-valley-dependent filtered states can be achieved in an incident energy range which can be controlled by the electric gate voltage. For the parallel magnetization configuration, the transmission is asymmetric with respect to the incident angle θ, and electrons with a very large negative incident angle can always transmit in propagating modes for one of the spin-valley filtered states under a certain electromagnetic condition. But for the antiparallel configuration, the transmission is symmetric about θ and there is no such transmission channel. The difference of the transmission between the two configurations leads to a giant tunneling magnetoresistance （TMR） effect. The TMR can reach to 100% in a certain Fermi energy interval around the electrostatic potential. This energy interval can be adjusted significantly by the magnetic field and/or electric gate voltage. The results obtained may be useful for future valleytronic and spintronic applications, as well as magnetoresistance device based on silicene.

Model of output characteristics of giant magnetoresistance(GMR) multilayer sensor

In this paper,the giant magnetoresistance(GMR)multilayer sensor is fabricated with a Wheatstone bridge,and it exhibits excellent performance with a sensitivity of 2.8349 mV/(V/Oe)(1 Oe=79.5775 A·m^-1)and a saturation field of 26 Oe along the sensitive axis.The GMR sensor is also characterized in a high magnetic field.The sensitivity decreases from 2.8349 mV/(V/Oe)at an angle of 0°to 0.0175 mV/(V/Oe)at an angle of 90°.Then,the sensor is placed in a series of rotating magnetic fields.We propose a model to express the output characteristics of the GMR multilayer sensor.The transfer curves of the sensor can be shown as two exactly symmetrical circles with an increasing radius when the magnetic field increases.The experimental results are consistent with the simulation results of the model.The advantage of this model is that it is simpler and more intuitive.

Simultaneous observation of positive and negative giant magnetoresistances in composite （La0.83Sr0.17MnO3） 1-x （ITO）x

We have studied the transport property of the composites （La0.83Sr0.17 MnO3）1-x（ITO）x [ITO=（In2O3）0.95 （SNO2）0.05], which were fabricated by mechanically mixing La0.83Sr0.17MnO3 and ITO grains. A giant positive magnetoresistance （PMR） has been observed above the Curie temperature Tc for samples with x around 0.40, in addition to the negative magnetoresistanee related to spin-dependent interracial tunnelling below To. For （La0.83Sr0.17MnO3）0.6（ITO）0.4, the magnetoresistive ratio for the PMR can reach 39.3% under a magnetic field H=2.24×10^5A/m. Theoretical analysis suggests that the magnetic-field-induced broadening of the p-n barrier between both kinds of grains and the density of the p-n heterostructures should be responsible for the PMR behaviour.

Lattice Effects and Irreversible Magnetoresistance in Gd Doped La-Ca-Mn-O

The Gd substituting effects for La in La0.67Ca0.33MnO3 has been studied. With increasing the substituting amount of Gd, the phase transition temperature of metal-isolator for the samples decreases, the corresponding peak resistivity increases, the Curie temperature decreases monotonically. The substitution of La-Ca-Mn-O with 11% Gd for La improved the magnetoresistance ratio by an order of magnitude. The effects of substituting Gd can be explained in terms of the lattice effects. An irreversible MR behaviour was observed in Gd-substituting compounds. This effect became marked when the substituting amount of Gd was greater than 7%. A maximum irreversible increment of MR ratio as large as 91% was obtained when Gd substituting amount was 11%.

Influence of Pr Content on the Sructure and Giant Magnetoresistance of Pr_x(Co_(40)Ag_(60))_(100-x) Granular Films

Prx（Co40Ag60）100-x （x=0, 0.5, 1, 1.5, 2, 3） granular films have been prepared by DC magneto controlled sputtering method. The XRD data indicated that Pr element favors the （111） plane preferential orientation. Magnetic measurements indicate that the average size of magnetic particles decreases as Pr content increases. For relatively low addition of Pr to CoAg granular films, Pr element can enhance GMR value and a peak value of about -14.3% is obtained at x=1.

Magnetoresistance Effect in (La_(0.9)Nd_(0.1))_(2/3)Ca_(1/3)Mn_(1-x)Fe_xO_3 (x=0, 0.05)

Due to the remarkable magnetoresistance (MR) effect on perovskite-type manganite, magnetoelectronics and spintronics have become attractive subjects of experimental and theoretical investigations for the application purpose. (La0.9Nd0.1)2/3Ca1/3Mn1-xFexO3(x=0, x=0.05) were prepared successfully by sol-gel method. The structure, magnetic properties, and transport properties of the compounds were investigated. The magnetoresistance effect depends on the composition and the temperature. XRD patterns show that the compound is a single phase polycrystal with pseudocubic structure. A large negative isotropic magnetoresistance effect in the samples were observed at low temperature region. The maximum MR of the samples was 77% and 97%, respectively. It was most likely due to the scattering or the tunneling transport of spin-polarized carriers in lattice under strong magnetic field.

Ultralow detection limit of giant magnetoresistance biosensor using Fe3O4–graphene composite nanoparticle label

A special Fe3O4nanoparticles–graphene（Fe3O4–GN） composite as a magnetic label was employed for biodetection using giant magnetoresistance（GMR） sensors with a Wheatstone bridge. The Fe3O4–GN composite exhibits a strong ferromagnetic behavior with the saturation magnetization MS of approximately 48 emu/g, coercivity HC of 200 Oe, and remanence Mr of 8.3 emu/g, leading to a large magnetic fringing field. However, the Fe3O4 nanoparticles do not aggregate together, which can be attributed to the pinning and separating effects of graphene sheet to the magnetic particles. The Fe3O4–GN composite is especially suitable for biodetection as a promising magnetic label since it combines two advantages of large fringing field and no aggregation. As a result, the concentration x dependence of voltage difference ｜？V｜ between detecting and reference sensors undergoes the relationship of ｜？V｜ = 240.5 lgx ＋ 515.2 with an ultralow detection limit of 10 ng/mL（very close to the calculated limit of 7 ng/mL） and a wide detection range of 4 orders.

Giant magnetoimpedance effect in Fe-Zr-Nb-Cu-B nanocrystalline ribbons

The giant magnetoimpedance effect of the nanocrystalline ribbonFe_(84)Zr_(2.08)Nb_(1.92)Cu_1B_(11) (atom fraction in %) was investigated. There is an optimumannealing temperature (T_A≈ 998 K) for obtaining the largest GMI (giant magneto-impedance) effectin the ribbon Fe_(84)Zr_(2.08)Nb_(1.92)Cu_1B_(11). The ribbon with longer ribbon length has strongerGMI effect, which may be connected with the demagnetization effect of samples. The frequencyf_(max), where the maximum magnetoimpedance GMI(Z)_(max) = [(Z(H) - Z(0))/Z(0)]_(max) occurs, isnear the intersecting frequency f_i of the curves of GMI(R), GMI(X), and GMI(Z) versus frequency.The magnetoreactance GMI(X) decreases monotonically with increasing frequency, which may be due tothe decrease of permeability. In contrast, with the AC (alternating current) frequency increasing,the inagnetore-sistance GMI(R) increases at first, undergoes a peak, and under then drops. Theincrease of the magnetoresistance may result from the enhancement of the skin effect with frequency.The maximum magnetoimpedance value GMI(Z)_(max) under H = 7.2 kA/m is about -56.18% at f= 0.3 MHzfor the nanocrystalline ribbon Fe_(84)Zr_(2.08)Nb_(1.92)Cu_1B_(11) with the annealing temperatureT_A= 998 K and the ribbon length L = 6 cm.

Quantum Analytical Theory for Giant Magnetoresistance in Magnetic Multilayered Cylindrical Systems

Taking into account the quantum size effects and considering three types of scattering from bulk impurities,rough surface and rough interfaces, we use quantum-statistical Green's function approach and Kubo theory to calculate the electronic conductivity and the giant magnetoresistance in magnetic multilayered cylindrical systems. It is found that in the limit of weakly scattering from impurities surface and interfaces, the total conductivity is given by a sum of conductivities of all the subbands and two spin-channels. For each subband and each spin-channel the scattering rate due to the impurities, surface and interfaces is added up.

Frequency dependence of magnetization and giant magneto impedance effect of amorphous wires

The frequency dependence of magnetization process and giant magneto impedance （GMI） effect of Co-rich melt-extracted amorphous wires was studied by Kerr effect and impedance analyzer, respectively. It is demonstrated that the transverse Kerr intensity and the corresponding GMI response increase with increasing frequency, which contributes to the upgraded skin effect. However, the skin depth has a slothful trend with frequency when it is up to the megahertz range, which gives rise to the transformation of magnetization. The process is much more sensitive to the direct current magnetic field and the sensitive change of the circular permeability, and GMI response is observed as its consequence. This proves that the evolution of circumferential magnetization and the corresponding permeability with the direct current magnetic field is the essence of GMI response, and a much more sensitive magnetization promises a better GMI response.