In this work, temperature dependences of small-signal model parameters in the SiGe HBT HICUM model are presented. Electrical elements in the small-signal equivalent circuit are first extracted at each temperature, the...In this work, temperature dependences of small-signal model parameters in the SiGe HBT HICUM model are presented. Electrical elements in the small-signal equivalent circuit are first extracted at each temperature, then the temperature dependences are determined by the series of extracted temperature coefficients, based on the established temperature for- mulas for corresponding model parameters. The proposed method is validated by a 1x 0.2 x 16 μm2 SiGe HBT over a wide temperature range （from 218 K to 473 K）, and good matching is obtained between the extracted and modeled resuits. Therefore, we believe that the proposed extraction flow of model parameter temperature dependence is reliable for characterizing the transistor performance and guiding the circuit design over a wide temperature range.展开更多
对VB IC B JT模型用于Ⅲ-V族化合物HBT器件建模的可行性进行了讨论和借鉴,结合UCSD HBT模型优点,提出一个新的可精确用于单异质结InGaP/GaAsHBT模型,并用于该类器件建模。测量和模型仿真I-V特性及多偏置条件下多频率点S参数对比结果表明...对VB IC B JT模型用于Ⅲ-V族化合物HBT器件建模的可行性进行了讨论和借鉴,结合UCSD HBT模型优点,提出一个新的可精确用于单异质结InGaP/GaAsHBT模型,并用于该类器件建模。测量和模型仿真I-V特性及多偏置条件下多频率点S参数对比结果表明,DC^20GHz频率范围内,新模型可对单、多指InGaP/GaAs HBT器件交流小信号特性进行精确表征。运用所建模型准确的预见了一宽带放大器性能。展开更多
基金supported partially by the Important National Science&Technology Specific Projects,China(Grant No.2013ZX02503003)
文摘In this work, temperature dependences of small-signal model parameters in the SiGe HBT HICUM model are presented. Electrical elements in the small-signal equivalent circuit are first extracted at each temperature, then the temperature dependences are determined by the series of extracted temperature coefficients, based on the established temperature for- mulas for corresponding model parameters. The proposed method is validated by a 1x 0.2 x 16 μm2 SiGe HBT over a wide temperature range （from 218 K to 473 K）, and good matching is obtained between the extracted and modeled resuits. Therefore, we believe that the proposed extraction flow of model parameter temperature dependence is reliable for characterizing the transistor performance and guiding the circuit design over a wide temperature range.
文摘对VB IC B JT模型用于Ⅲ-V族化合物HBT器件建模的可行性进行了讨论和借鉴,结合UCSD HBT模型优点,提出一个新的可精确用于单异质结InGaP/GaAsHBT模型,并用于该类器件建模。测量和模型仿真I-V特性及多偏置条件下多频率点S参数对比结果表明,DC^20GHz频率范围内,新模型可对单、多指InGaP/GaAs HBT器件交流小信号特性进行精确表征。运用所建模型准确的预见了一宽带放大器性能。
