This paper describes a new method to create nanoscale SiO2 pits or channels using single-walled carbon nanotubes （SWNTs） in an HF solution at room temperature within a few seconds. Using aligned SWNT arrays, a patte...This paper describes a new method to create nanoscale SiO2 pits or channels using single-walled carbon nanotubes （SWNTs） in an HF solution at room temperature within a few seconds. Using aligned SWNT arrays, a pattern of nanoscale SiO2 channels can be prepared. The nanoscale SiO2 patterns can also be created on the surface of three- dimensional （3D） SiO2 substrate and even the nanoscale trenches can be constructed with arbitrary shapes. A possible mechanism for this enhanced etching of SiO2 has been qualitatively analysed using defects in SWNTs, combined with H3O＋ electric double layers around SWNTs in an HF solution.展开更多
Polished fused silica samples were etched for different durations by using hydrofluoric（HF） acid solution with HF concentrations in an ultrasonic field. Surface and subsurface polishing residues and molecular struct...Polished fused silica samples were etched for different durations by using hydrofluoric（HF） acid solution with HF concentrations in an ultrasonic field. Surface and subsurface polishing residues and molecular structure parameters before and after the etching process were characterized by using a fluorescence microscope and infrared（IR） spectrometer, respectively. The laser induced damage thresholds（LIDTs） of the samples were measured by using pulsed nanosecond laser with wavelength of 355 nm. The results showed that surface and subsurface polishing residues can be effectively reduced by the acid etching process, and the LIDTs of fused silica are significantly improved. The etching effects increased with the increase of the HF concentration from 5 wt.% to 40 wt.%. The amount of polishing residues decreased with the increase of the etching duration and then kept stable. Simultaneously, with the increase of the etching time, the mechanical strength and molecular structure were improved.展开更多
为了提升电火花线切割(Wire cut Electric Discharge Machining,WEDM)加工后的TC4钛合金表面质量,减少表面重熔层厚度,采用不同浓度配比(1∶4、1∶6和1∶8)的HF-HNO_(3)酸蚀溶液对钛合金试件进行化学抛光处理。实验结果表明,HF-HNO_(3)...为了提升电火花线切割(Wire cut Electric Discharge Machining,WEDM)加工后的TC4钛合金表面质量,减少表面重熔层厚度,采用不同浓度配比(1∶4、1∶6和1∶8)的HF-HNO_(3)酸蚀溶液对钛合金试件进行化学抛光处理。实验结果表明,HF-HNO_(3)酸蚀溶液能使钛合金重熔层得到显著去除,表面微裂纹得到有效控制;当HF-HNO_(3)酸蚀溶液的浓度配比为1:6时,试件能获得最低的表面粗糙度和最大的表面粗糙度下降率,并且抛光前后钛合金表面元素含量发生了不同程度的变化,Ti、Al和V元素质量分数分别提高了21.5%、41.3%和13.2%,而O、C元素质量分数分别降低了82.5%和33.6%;HF-HNO_(3)酸蚀溶液可显著改善TC4钛合金试件电火花线切割加工后的表面缺陷。钛合金重熔层结构的主要成分与化学抛光后氧化膜的主要成分相似,但与氧化膜的结构不同,这对TC4钛合金试件表面质量提升具有重要意义。展开更多
基金supported by the National Natural Science Foundation of China (Grant Nos. 90406007, 61076069, 60776053, and 10434010)the National Basic Research Program of China (Grant No. 2007CB936800)
文摘This paper describes a new method to create nanoscale SiO2 pits or channels using single-walled carbon nanotubes （SWNTs） in an HF solution at room temperature within a few seconds. Using aligned SWNT arrays, a pattern of nanoscale SiO2 channels can be prepared. The nanoscale SiO2 patterns can also be created on the surface of three- dimensional （3D） SiO2 substrate and even the nanoscale trenches can be constructed with arbitrary shapes. A possible mechanism for this enhanced etching of SiO2 has been qualitatively analysed using defects in SWNTs, combined with H3O＋ electric double layers around SWNTs in an HF solution.
基金Project supported by the China Postdoctoral Science Foundation(Grant No.2016M592709)the National Natural Science Foundation of China(Grant No.51535003)
文摘Polished fused silica samples were etched for different durations by using hydrofluoric（HF） acid solution with HF concentrations in an ultrasonic field. Surface and subsurface polishing residues and molecular structure parameters before and after the etching process were characterized by using a fluorescence microscope and infrared（IR） spectrometer, respectively. The laser induced damage thresholds（LIDTs） of the samples were measured by using pulsed nanosecond laser with wavelength of 355 nm. The results showed that surface and subsurface polishing residues can be effectively reduced by the acid etching process, and the LIDTs of fused silica are significantly improved. The etching effects increased with the increase of the HF concentration from 5 wt.% to 40 wt.%. The amount of polishing residues decreased with the increase of the etching duration and then kept stable. Simultaneously, with the increase of the etching time, the mechanical strength and molecular structure were improved.
文摘为了提升电火花线切割(Wire cut Electric Discharge Machining,WEDM)加工后的TC4钛合金表面质量,减少表面重熔层厚度,采用不同浓度配比(1∶4、1∶6和1∶8)的HF-HNO_(3)酸蚀溶液对钛合金试件进行化学抛光处理。实验结果表明,HF-HNO_(3)酸蚀溶液能使钛合金重熔层得到显著去除,表面微裂纹得到有效控制;当HF-HNO_(3)酸蚀溶液的浓度配比为1:6时,试件能获得最低的表面粗糙度和最大的表面粗糙度下降率,并且抛光前后钛合金表面元素含量发生了不同程度的变化,Ti、Al和V元素质量分数分别提高了21.5%、41.3%和13.2%,而O、C元素质量分数分别降低了82.5%和33.6%;HF-HNO_(3)酸蚀溶液可显著改善TC4钛合金试件电火花线切割加工后的表面缺陷。钛合金重熔层结构的主要成分与化学抛光后氧化膜的主要成分相似,但与氧化膜的结构不同,这对TC4钛合金试件表面质量提升具有重要意义。
