Terahertz （THz） direct detectors based on superconducting niobium nitride （NbN） hot electron bolometers （HEBs） with microwave （MW） biasing are studied. The MW is used to bias the HEB to the optimum point and t...Terahertz （THz） direct detectors based on superconducting niobium nitride （NbN） hot electron bolometers （HEBs） with microwave （MW） biasing are studied. The MW is used to bias the HEB to the optimum point and to readout the impedance changes caused by the incident THz signals. Compared with the thermal biasing method, this method would be more promising in large scale array with simple readout. The used NbN HEB has an excellent performance as heterodyne detector with the double sideband noise temperature （T N） of 403K working at 4.2K and 0.65THz. As a result, the noise equivalent power of 1.5pW/Hz 1/2 and the response time of 64ps are obtained for the direct detectors based on the NbN HEBs and working at 4.2K and 0.65THz.展开更多
Typically,infrared detectors require cryogenic cooling to limit dark current w hich is directly dependent on Auger generation-recombination mechanism and highly influential in Hg Cd Te-narrow band gap material.The Aug...Typically,infrared detectors require cryogenic cooling to limit dark current w hich is directly dependent on Auger generation-recombination mechanism and highly influential in Hg Cd Te-narrow band gap material.The Auger suppressed architectures have an advantage over conventional detectors allow ing operation at elevated temperatures>200 K.Architecture w ith combination of exclusion and extraction heterojunctions has been proposed to low er Auger contribution.The paper presents a new long-w ave(≈10μm)infrared Hg Cd Te architecture w ith graded gap/doping interfaces and extra barrier located in exclusion heterojunction to suppress dark current for high operating temperature conditions.Proper barrier implementation reduces dark current by more than 20 A/cm2for room temperature operation.展开更多
基金Supported by the National Basic Research Program of China under Grant No 2014CB339800the National Natural Science Foundation of China under Grant Nos 61521001,11173015 and 11227904+1 种基金the Fundamental Research Funds for the Central Universitiesthe Key Laboratory of Advanced Techniques for Manipulating Electromagnetic Waves of Jiangsu Province
文摘Terahertz （THz） direct detectors based on superconducting niobium nitride （NbN） hot electron bolometers （HEBs） with microwave （MW） biasing are studied. The MW is used to bias the HEB to the optimum point and to readout the impedance changes caused by the incident THz signals. Compared with the thermal biasing method, this method would be more promising in large scale array with simple readout. The used NbN HEB has an excellent performance as heterodyne detector with the double sideband noise temperature （T N） of 403K working at 4.2K and 0.65THz. As a result, the noise equivalent power of 1.5pW/Hz 1/2 and the response time of 64ps are obtained for the direct detectors based on the NbN HEBs and working at 4.2K and 0.65THz.
基金Supported by the Polish National Science Centre(DEC2011/01/B/ST5/06283)
文摘Typically,infrared detectors require cryogenic cooling to limit dark current w hich is directly dependent on Auger generation-recombination mechanism and highly influential in Hg Cd Te-narrow band gap material.The Auger suppressed architectures have an advantage over conventional detectors allow ing operation at elevated temperatures>200 K.Architecture w ith combination of exclusion and extraction heterojunctions has been proposed to low er Auger contribution.The paper presents a new long-w ave(≈10μm)infrared Hg Cd Te architecture w ith graded gap/doping interfaces and extra barrier located in exclusion heterojunction to suppress dark current for high operating temperature conditions.Proper barrier implementation reduces dark current by more than 20 A/cm2for room temperature operation.
