An open-end high-power microwave-induced fracturing system for hard rock

Microwave pre-treatment is considered as a promising technique for alleviating cutter wear. This paper introduces a high-power microwave-induced fracturing system for hard rock. The test system consists of a high-power microwave subsystem (100 kW), a true triaxial testing machine, a dynamic monitoring subsystem, and an electromagnetic shielding subsystem. It can realize rapid microwave-induced fracturing, intelligent tuning of impedance, dynamic feedback under strong microwave fields, and active control of microwave parameters by addressing the following issues: the instability and insecurity of the system, the discharge breakdown between coaxial lines during high-power microwave output, and a lack of feedback of rock-microwave response. In this study, microwave-induced surface and borehole fracturing tests under true triaxial stress were carried out. Experimental comparisons imply that high-power microwave irradiation can reduce the fracturing time of hard rock and that the fracture range (160 mm) of a 915-MHz microwave source is about three times that of 2.45 GHz. After microwave-induced borehole fracturing, many tensile cracks occur on the rock surface and in the borehole: the maximum reduction of the P-wave velocity is 12.8%. The test results show that a high-power microwave source of 915 MHz is more conducive to assisting mechanical rock breaking and destressing. The system can promote the development of microwave-assisted rock breaking equipment.

Research progresses on Cherenkov and transit-time high-power microwave sources at NUDT

Research progresses on Cherenkov and transit-time high-power microwave(HPM)sources in National University of Defense Technology(NUDT)of China are presented.The research issues are focused on the following aspects.The pulse-shortening phenomenon in O-type Cerenkov HPM devices is suppressed.The compact coaxial relativistic backward-wave oscillators(RBWOs)at low bands are developed.The power efficiency in M-Type HPM tubes without guiding magnetic field increased.The power capacities and power efficiencies in the triaxial klystron amplifier(TKA)and relativistic transit-time oscillator(TTO)at higher frequencies increased.In experiments,some exciting results were obtained.The X-band source generated 2 GW microwave power with a pulse duration of 110 ns in 30 Hz repetition mode.Both L-and P-band compact RBWOs generated over 2 GW microwave power with a power efficiency of over 30%.There is approximately a 75% decline of the volume compared with that of conventional RBWO under the same power capacity conditions.A 1.755 GHz MILO produced 3.1 GW microwave power with power efficiency of 10.4%.A 9.37 GHz TKA produced the 240 MW microwave power with the gain of 34 dB.A 14.3 GHz TTO produced 1 GW microwave power with power efficiency of 20%.

Damage effects and mechanism of the silicon NPN monolithic composite transistor induced by high-power microwaves

A two-dimensional model of the silicon NPN monolithic composite transistor is established for the first time by utilizing the semiconductor device simulator, Sentaurus-TCAD. By analyzing the internal distributions of electric field, current density, and temperature of the device, a detailed investigation on the damage process and mechanism induced by high-power microwaves （HPM） is performed. The results indicate that the temperature elevation occurs in the negative half-period and the temperature drop process is in the positive half-period under the HPM injection from the output port. The damage point is located near the edge of the base-emitter junction of T2, while with the input injection it exists between the base and the emitter of T2. Comparing these two kinds of injection, the input injection is more likely to damage the device than the output injection. The dependences of the damage energy threshold and the damage power threshold causing the device failure on the pulse-width are obtained, and the formulas obtained have the same form as the experimental equations, which demonstrates that more power is required to destroy the device if the pulse-width is shorter. Furthermore, the simulation result in this paper has a good coincidence with the experimental result.

Investigation on latch-up susceptibility induced by high-power microwave in complementary metal–oxide–semiconductor inverter

The latch-up effect induced by high-power microwave（HPM） in complementary metal–oxide–semiconductor（CMOS） inverter is investigated in simulation and theory in this paper. The physical mechanisms of excess carrier injection and HPM-induced latch-up are proposed. Analysis on upset characteristic under pulsed wave reveals increasing susceptibility under shorter-width pulsed wave which satisfies experimental data, and the dependence of upset threshold on pulse repetitive frequency（PRF） is believed to be due to the accumulation of excess carriers. Moreover, the trend that HPMinduced latch-up is more likely to happen in shallow-well device is proposed.Finally, the process of self-recovery which is ever-reported in experiment with its correlation with supply voltage and power level is elaborated, and the conclusions are consistent with reported experimental results.

High-power microwave propagation properties in the argon plasma array

The argon plasma induced by the L-/C-band high-power microwave(HPM) is investigated theoretically and experimentally. Influences of the microwave power, pulse width, polarization and the plasma electron density on the protection performance of the plasma array against HPM are studied. The results show that the effect of HPM is caused by energy accumulation, with the gas breakdown emerging only after a short time. The attenuation of the wave by the plasma array with the tubes off can reach approximately 23 dB at 1.3 GHz. It can also be obtained that the protection performance of the plasma array against the TE wave is better than that against the TM one. The plasma array shows better protection performance in the L-band than in the C-band. In addition,the attenuation of 5.6 GHz HPM can reach 30 dB when the tubes are turned on in the experiment.The research shows that the plasma array has protection ability against HPM.

Analysis of High-Power Microwave Propagation in a Magnetized Plasma Filled Waveguide

Plasma filling can dramatically improve the performance of high power microwave devices. The characteristics of high-power microwave propagation along plasma filled waveguides in an axial magnetic field are analyzed in this paper, and the ponderomotive force effect of high power microwave is taken into consideration. Theoretical analysis and preliminary numerical calculations are performed. The analyses show that the ponderomotive effect would change the plasma density, distribution of microwave field intensity, and dispersion of wave propagation. The higher the microwave power, the stronger the ponderomotive effect. In different magnetic fields, the ponderomotive effect is different.

Short-pulse high-power microwave breakdown at high pressures

The fluid model is proposed to investigate the gas breakdown driven by a short-pulse（such as a Gaussian pulse） highpower microwave at high pressures.However,the fluid model requires specification of the electron energy distribution function（EEDF）;the common assumption of a Maxwellian EEDF can result in the inaccurate breakdown prediction when the electrons are not in equilibrium.We confirm that the influence of the incident pulse shape on the EEDF is tiny at high pressures by using the particle-in-cell Monte Carlo collision（PIC-MCC） model.As a result,the EEDF for a rectangular microwave pulse directly derived from the Boltzmann equation solver Bolsig＋ is introduced into the fluid model for predicting the breakdown threshold of the non-rectangular pulse over a wide range of pressures,and the obtained results are very well matched with those of the PIC-MCC simulations.The time evolution of a non-rectangular pulse breakdown in gas,obtained by the fluid model with the EEDF from Bolsig＋,is presented and analyzed at different pressures.In addition,the effect of the incident pulse shape on the gas breakdown is discussed.

Design of High-power Microwave Waveguide Divider

A new LHW antenna will be used in LHCD system on tokanak HT-7U, where a high-power microwave waveguide power divider is a key device. This paper presents the power divider structure whose coupling element is in the common narrow wall between two identical waveguides, a certain of which is completely excavated. Green's Function Method is used to analyze the electric field distributions of the structure, and consequently the graphs between the scattering matrix and the geometrical dimensions are given. The graphs can be straightly applied to the process of the power divider.

Nonlinear Properties of an Inhomogeneous Diode Structure in a Strong Microwave Field

Results of experimental investigation of detection (rectification) of high power X-band microwave signal in diodes of various design (semiconductor p-n-junction, point-contact, Schottky, Metal-Isolator-Metal—MIM) are reported. The maximum of the detected direct voltage V vs. power P of microwave signal and subsequent polarity reversal, previously found in MIM diodes in the optical and microwave bands, have found to be characteristic of all investigated diodes as well. After the reversal of polarity, this dependence comes linear, and the sign of the voltage corresponds to thermoEMF. In some diodes, the hysteresis on V(P) was observed. All 5 types of V(P) of MIM diodes (have made from different pairs of metals), reported earlier, were reproduced on same p-n-junction diode by variable external DC bias. These results joined with abnormal frequency cutoff forced to suggest that there is an unknown mechanism for direct flow of charge carriers (and for generate direct current) in the high-frequency electrical field, which differs from the conventional rectification.

Recent progress of parameter-adjustable high-power photonic microwave generation based on wide-bandgap photoconductive semiconductors

Radio frequency/microwave-directed energy sources using wide bandgap SiC photoconductive semiconductors have attracted much attention due to their unique advantages of high-power output and multi-parameter adjustable ability.Over the past several years,benefitting from the sustainable innovations in laser technology and the significant progress in materials technology,megawatt-class output power electrical pulses with a flexible frequency in the P and L microwave wavebands have been achieved by photoconductive semiconductor devices.Here,we mainly summarize and review the recent progress of the high-power photonic microwave generation based on the SiC photoconductive semiconductor devices in the linear modulation mode,including the mechanism,system architecture,critical technology,and experimental demonstration of the proposed high-power photonic microwave sources.The outlooks and challenges for the future of multi-channel power synthesis development of higher power photonic microwave using wide bandgap photoconductors are also discussed.

Microwave damage susceptibility trend of a bipolar transistor as a function of frequency

We conduct a theoretical study of the damage susceptibility trend of a typical bipolar transistor induced by a high-power microwave （HPM） as a function of frequency. The dependences of the burnout time and the damage power on the signal frequency are obtained. Studies of the internal damage process and the mechanism of the device are carried out from the variation analysis of the distribution of the electric field, current density, and temperature. The investigation shows that the burnout time linearly depends on the signal frequency. The current density and the electric field at the damage position decrease with increasing frequency. Meanwhile, the temperature elevation occurs in the area between the p-n junction and the n n＋ interface due to the increase of the electric field. Adopting the data analysis software, the relationship between the damage power and frequency is obtained. Moreover, the thickness of the substrate has a significant effect on the burnout time.

Hardening measures for bipolar transistors against microwave-induced damage

In the present paper we study the influences of the bias voltage and the external components on the damage progress of a bipolar transistor induced by high-power microwaves. The mechanism is presented by analyzing the variation in the internal distribution of the temperature in the device. The findings show that the device becomes less vulnerable to damage with an increase in bias voltage. Both the series diode at the base and the relatively low series resistance at the emitter, Re, can obviously prolong the burnout time of the device. However, Re will aid damage to the device when the value is sufficiently high due to the fact that the highest hot spot shifts from the base-emitter junction to the base region. Moreover, the series resistance at the base Rb will weaken the capability of the device to withstand microwave damage.

Dependence of plasma structure and propagation on microwave amplitude and frequency during breakdown of atmospheric pressure air

The structure and propagation of the plasma in air breakdown driven by high-power microwave have attracted great interest.This paper focuses on the microwave amplitude and frequency dependence of plasma formation at atmospheric pressure using one two-dimensional model,which is based on Maxwell’s equations coupled with plasma fluid equations.In this model,we adopt the effective electron diffusion coefficient,which can describe well the change from free diffusion in a plasma front to ambipolar diffusion in the bulk plasma.The filamentary plasma arrays observed in experiments are well reproduced in the simulations.The density and propagation speed of the plasma from the simulations are also close to the corresponding experimental data.The size of plasma filament parallel to the electric field decreases with increasing frequency,and it increases with the electric field amplitude.The distance between adjacent plasma filaments is close to one-quarter wavelength under different frequencies and amplitudes.The plasma propagation speed shows little change with the frequency,and it increases with the amplitude.The variations of plasma structure and propagation with the amplitude and frequency are due to the change in the distribution of the electric field.

Mechanical-electrical synergy damage effect on GaN HEMT under high-power microwave

High-power microwave damage to enhanced-mode Ga N high electron mobility transistors(HEMT)is studied considering the mechanical-electrical synergy effect due to the strong piezoelectric properties of Ga N,which has a wurtzite crystal structure.Based on the piezoelectric constitutive equation,the mechanical and electrical energies were equivalently coupled,and the effective numerical model was built in the simulation software.The results indicated that a part of the electrical energy was stored in the device as a form of elastic energy,causing the burnout time of Ga N HEMT to be extended.The effects of different injection voltages and frequencies were analyzed,and the results revealed that elastic energy plays a different role during the process of device damage.These results are of great significance for the design of Ga N HEMTs with better reliability in harsh electromagnetic environments and for improving their protection design.

HPM对大鼠大脑结构及其神经递质的影响

目的探讨S波段高功率微波(HPM)辐射对大鼠皮层形态结构及其氨基酸类神经递质的影响。方法采用2～90mW/cm2S波段高功率微波辐照Wistar大鼠,通过苏素素—伊红染色(HE)、甲苯胺蓝染色和电镜观察大脑皮层的形态结构改变;采用高效液相色谱仪检测10和50mW/cm2照后6h和1d大脑皮层中4种氨基酸(谷氨酸、天门冬氨酸、γ氨基丁酸和甘氨酸)含量的变化。结果平均功率密度10,50和90mW/cm2S波段高功率微波可引起大脑皮层神经元固缩、深染,尼氏体减少;突触结构模糊,囊泡堆积;髓鞘融合、解离等。10和50mW/cm2组照后6h大脑皮层上述4种氨基酸含量均显著增高(P<0.01);而照后1d仅见γ氨基丁酸和甘氨酸含量仍较高(P<0.01)。结论S波段高功率微波辐射可引起大鼠大脑皮层神经元尼氏体、突触结构和髓鞘等损伤及氨基酸类神经递质代谢紊乱。

HPM武器电子毁伤效能评估方法

为综合考虑高功率微波(high-power microwave,HPM)电子毁伤过程中涉及的各要素并给出特定概率下的毁伤程度分级,提出HPM武器电子毁伤效能的灰色-贝叶斯网络评估方法。通过分析HPM武器的电子毁伤过程,构建了毁伤的评估指标体系,并采用层次分析法和熵权法确定了指标权重;根据各指标的取值定义了基于隶属度的均匀评分规则,并以此为输入,借助灰色和贝叶斯网络理论,构建了HPM武器电子毁伤等级和毁伤概率评估模型,明确了干扰、削弱、损伤及破坏4种毁伤等级对应的评估值区间,计算了相应毁伤等级下的毁伤概率。最后通过算例进行了验证,效果良好。该评估方法对定量研究HPM武器的电子毁伤具有一定的参考价值。

基于效应数据的微波器件HPM效应分析及建模方法

HPM对微波器件的输出脉冲影响主要有幅度变化、脉宽变化、相位变化以及暂时性压制,以此为基础建立了4种效应参量的模型,分别是衰减因子、脉宽、相移和压制时间。在建立效应参量模型时,参照分离变量法,提出使用加权函数的方法把多维函数分解成多个1维函数相乘,基本解决了利用有限实验数据建立数学模型的问题。给出了利用效应数据建立数学模型所常用的几种数据处理方法,如曲线拟合、查表/插值和概率统计,并给出了该方法在TR放电管效应评估中的使用实例。

Theoretical Analysis of the Interaction between the High-Power Microwave and the Electronic Circuits

A simple theoretical model based on plasma physics is presented to analyze the microwave plasma effects on the electronic circuits.Results show that under certain parameter conditions the threshold for damaging the electronic circuits decreases with the decrease of the frequency of the high-power microwave.In addition,the oscillation amplitudes of the plasma electrons increase dramatically when the plasma frequency is near the high-power microwave frequency, which can easily damage the electronic circuits.

HPM效应研究中的FDTD-PSPICE混合仿真方法

用FDTD-PSPICE混合仿真方法研究了高功率微波(HPM)对印制电路板(PCB)上电路信号的作用机理,通过开发FDTD-PSPICE仿真程序完成电磁波和电路信号的混合计算,以实现电磁波对电路作用的分析。在FDTD与SPICE之间的快速混合仿真中,文章采用进程间通信的方法使程序运行效率有很大的提高。进一步分析了HPM对一个简单放大器电路的影响。

HPM等离子体有源天线散射研究

应用高功率微波大气传输机理和等离子体物理理论,提出了一种新概念天线—等离子有源天线;首先计算高功率微波脉冲的等离子体的折射指数,分析折射指数与反射能流密度及输入功率密度的关系,然后研究了高度等参量对等离子有源天线输出能量的影响.