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A simplified compact model of miniaturized cross-shaped CMOS integrated Hall devices 被引量:1
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作者 黄海云 王德君 +3 位作者 李文波 徐跃 秦会斌 胡永才 《Journal of Semiconductors》 EI CAS CSCD 2012年第8期60-66,共7页
A simplified compact model for a miniaturized cross-shaped CMOS integrated Hall device is presented. The model has a simple circuit structure,only consisting of a passive network with eight non-linear resistors and fo... A simplified compact model for a miniaturized cross-shaped CMOS integrated Hall device is presented. The model has a simple circuit structure,only consisting of a passive network with eight non-linear resistors and four current-controlled voltage sources.It completely considers the following effects:non-linear conductivity,geometry dependence of sensitivity,temperature drift,lateral diffusion,and junction field effect.The model has been implemented in Verilog-A hardware description language and was successfully performed in a Cadence Spectre simulator.The simulation results are in good accordance with the classic experimental results reported in the literature. 展开更多
关键词 miniaturized hall device compact model lateral diffusion junction field effect
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Resistance Matrix for an Anisotropic Hall Plate with Multiple Extended Asymmetric Contacts on the Boundary
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作者 Dorel Homentcovschi Radu Oprea Bruce T. Murray 《Journal of Applied Mathematics and Physics》 2021年第8期1911-1925,共15页
The electrical properties of magnetic sensing devices fabricated from anisotropic materials are not easily extracted. Here we present a method for determining the resistance matrix for an anisotropic device with multi... The electrical properties of magnetic sensing devices fabricated from anisotropic materials are not easily extracted. Here we present a method for determining the resistance matrix for an anisotropic device with multiple electrical contacts placed in a perpendicular magnetic field. By using the methods developed by Van der Pauw and Wasscher, the analysis for the anisotropic system is reduced to the equivalent problem for an isotropic sample, which can then be solved using methods developed previously. As a result, the method works in the case of structures with an arbitrary number of asymmetric extended contacts at large magnetic field strength. In addition to the extraction of nonisotropic resistivities, the resistance matrix can be used to analyze the Hall effect for anisotropic plates. 展开更多
关键词 hall device Resistance Matrix Van Der Pauw Method ANISOTROPIC
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Performance prediction of four-contact vertical Hall-devices using a conformal mapping technique 被引量:2
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作者 黄杨 徐跃 郭宇锋 《Journal of Semiconductors》 EI CAS CSCD 2015年第12期105-109,共5页
Instead of the conventional design with five contacts in the sensor active area, innovative vertical Hall devices (VHDs) with four contacts and six contacts are asymmetrical in structural design but symmetrical in t... Instead of the conventional design with five contacts in the sensor active area, innovative vertical Hall devices (VHDs) with four contacts and six contacts are asymmetrical in structural design but symmetrical in the current flow that can be well fit for the spinning current technique for offset elimination. In this article, a conformal mapping calculation method is used to predict the performance of asymmetrical VHD embedded in a deep n-well with four contacts. Furthermore, to make the calculation more accurate, the junction field effect is also involved into the conformal mapping method. The error between calculated and simulated results is less than 5% for the currentrelated sensitivity, and approximately 13% for the voltage-related sensitivity. This proves that such calculations can be used to predict the optimal structure of the vertical Hall-devices. 展开更多
关键词 conformal mapping technique vertical hall device geometry factor magnetic sensitivity
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