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Temperature dependence of single-event transients in SiGe heterojunction bipolar transistors for cryogenic applications
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作者 潘霄宇 郭红霞 +4 位作者 冯亚辉 刘以农 张晋新 付军 喻国芳 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第9期535-544,共10页
We experimentally demonstrate that the dominant mechanism of single-event transients in silicon-germanium heterojunction bipolar transistors(SiGe HBTs)can change with decreasing temperature from+20℃to-180℃.This is a... We experimentally demonstrate that the dominant mechanism of single-event transients in silicon-germanium heterojunction bipolar transistors(SiGe HBTs)can change with decreasing temperature from+20℃to-180℃.This is accomplished by using a new well-designed cryogenic experimental system suitable for a pulsed-laser platform.Firstly,when the temperature drops from+20℃to-140℃,the increased carrier mobility drives a slight increase in transient amplitude.However,as the temperature decreases further below-140℃,the carrier freeze-out brings about an inflection point,which means the transient amplitude will decrease at cryogenic temperatures.To better understand this result,we analytically calculate the ionization rates of various dopants at different temperatures based on Altermatt's new incomplete ionization model.The parasitic resistivities with temperature on the charge-collection pathway are extracted by a two-dimensional(2D)TCAD process simulation.In addition,we investigate the impact of temperature on the novel electron-injection process from emitter to base under different bias conditions.The increase of the emitter-base junction's barrier height at low temperatures could suppress this electron-injection phenomenon.We have also optimized the built-in voltage equations of a high current compact model(HICUM)by introducing the impact of incomplete ionization.The present results and methods could provide a new reference for effective evaluation of single-event effects in bipolar transistors and circuits at cryogenic temperatures,and could provide a new evidence of the potential of SiGe technology in applications in extreme cryogenic environments. 展开更多
关键词 SiGe heterojunction bipolar transistors pulsed laser TCAD simulation single-event transient
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Sensitivity study of the SiGe heterojunction bipolar transistor single event effect based on pulsed laser and technology computer-aided design simulation
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作者 冯亚辉 郭红霞 +6 位作者 潘霄宇 张晋新 钟向丽 张鸿 琚安安 刘晔 欧阳晓平 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第6期420-428,共9页
The single event effect of a silicon–germanium heterojunction bipolar transistor(SiGe HBT) was thoroughly investigated. By considering the worst bias condition, the sensitive area of the proposed device was scanned w... The single event effect of a silicon–germanium heterojunction bipolar transistor(SiGe HBT) was thoroughly investigated. By considering the worst bias condition, the sensitive area of the proposed device was scanned with a pulsed laser.With variation of the collector bias and pulsed laser incident energy, the single event transient of the SiGe HBT was studied.Moreover, the single event transient produced by laser irradiation at a wavelength of 532 nm was more pronounced than at a wavelength of 1064 nm. Finally, the impact of the equivalent linear energy transfer of the 1064 nm pulsed laser on the single event transient was qualitatively examined by performing technology computer-aided design simulations, and a good consistency between the experimental data and the simulated outcomes was attained. 展开更多
关键词 SILICON-GERMANIUM heterojunction bipolar transistor pulsed laser single event effect equivalent linear energy transfer(LET)value
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Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors 被引量:1
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作者 徐小波 张鹤鸣 +1 位作者 胡辉勇 马建立 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第5期444-449,共6页
Silicon germanium (SiGe) heterojunction bipolar transistor (HBT) on thin silicon-on-insulator (SOI) has recently been demonstrated and integrated into the latest SOI BiCMOS technology. The Early effect of the SO... Silicon germanium (SiGe) heterojunction bipolar transistor (HBT) on thin silicon-on-insulator (SOI) has recently been demonstrated and integrated into the latest SOI BiCMOS technology. The Early effect of the SOI SiGe HBT is analysed considering vertical and horizontal collector depletion, which is different from that of a bulk counterpart. A new compact formula of the Early voltage is presented and validated by an ISE TCAD simulation. The Early voltage shows a kink with the increase of the reverse base-collector bias. Large differences are observed between SOI devices and their bulk counterparts. The presented Early effect model can be employed for a fast evaluation of the Early voltage and is useful to the design, the simulation and the fabrication of high performance SOI SiCe devices and circuits. 展开更多
关键词 heterojunction bipolar transistor (hbt SIGE SILICON-ON-INSULATOR Early effect
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Neuro-Space Mapping for Modeling Heterojunction Bipolar Transistor 被引量:1
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作者 闫淑霞 成千福 +1 位作者 邬海峰 张齐军 《Transactions of Tianjin University》 EI CAS 2015年第1期90-94,共5页
A neuro-space mapping(Neuro-SM) for modeling heterojunction bipolar transistor(HBT) is presented, which can automatically modify the input signals of the given model by neural network. The novel Neuro-SM formulations ... A neuro-space mapping(Neuro-SM) for modeling heterojunction bipolar transistor(HBT) is presented, which can automatically modify the input signals of the given model by neural network. The novel Neuro-SM formulations for DC and small-signal simulation are proposed to obtain the mapping network. Simulation results show that the errors between Neuro-SM models and the accurate data are less than 1%, demonstrating that the accurcy of the proposed method is higher than those of the existing models. 展开更多
关键词 heterojunction bipolar transistor (hbt nonlinear device modeling neural network neuro-space mapping OPTIMIZATION
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A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor 被引量:1
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作者 孙亚宾 付军 +10 位作者 许军 王玉东 周卫 张伟 崔杰 李高庆 刘志弘 余永涛 马英起 封国强 韩建伟 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第5期49-54,共6页
A study on the single event transient (SET) induced by a pulsed laser in a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is presented in this work. The impacts of laser energy and collector lo... A study on the single event transient (SET) induced by a pulsed laser in a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is presented in this work. The impacts of laser energy and collector load resistance on the SET are investigated in detail. The waveform, amplitude, and width of the SET pulse as well as collected charge are used to characterize the SET response. The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significantly affect the SET in the SiGe HBT. Furthermore, the underlying physical mechanisms are analyzed and investigated, and a near-ideal exponential model is proposed for the first time to describe the discharge of laser-induced electrons via collector resistance to collector supply when both base-collector and collector-substrate junctions are reverse biased or weakly forward biased. Besides, it is found that an additional multi-path discharge would play an important role in the SET once the base-collector and collector-substrate junctions get strongly forward biased due to a strong transient step charge by the laser pulse. 展开更多
关键词 single event transient (SET) pulsed laser charge collection SiGe heterojunction bipolar transistor(hbt
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A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology 被引量:2
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作者 李欧鹏 张勇 +4 位作者 徐锐敏 程伟 王元 牛斌 陆海燕 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第5期448-452,共5页
Design and characterization of a G-band(140–220 GHz) terahertz monolithic integrated circuit(TMIC) amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm In Ga As/In P double heteroju... Design and characterization of a G-band(140–220 GHz) terahertz monolithic integrated circuit(TMIC) amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm In Ga As/In P double heterojunction bipolar transistor(DHBT). An inverted microstrip line is implemented to avoid a parasitic mode between the ground plane and the In P substrate. The on-wafer measurement results show that peak gains are 20 dB at 140 GHz and more than 15-dB gain at 140–190 GHz respectively. The saturation output powers are-2.688 dBm at 210 GHz and-2.88 dBm at 220 GHz,respectively. It is the first report on an amplifier operating at the G-band based on 0.5-μm InP DHBT technology. Compared with the hybrid integrated circuit of vacuum electronic devices, the monolithic integrated circuit has the advantage of reliability and consistency. This TMIC demonstrates the feasibility of the 0.5-μm InGaAs/InP DHBT amplifier in G-band frequencies applications. 展开更多
关键词 terahertz amplifier InP double heterojunction bipolar transistor inverted microstrip line monolithic integrated circuit
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Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation 被引量:2
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作者 孙亚宾 付军 +6 位作者 许军 王玉东 周卫 张伟 崔杰 李高庆 刘志弘 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第11期431-437,共7页
The degradations in NPN silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) were fully studied in this work, by means of 25-MeV Si, 10-MeV C1, 20-MeV Br, and 10-MeV Br ion irradiation, respectively.... The degradations in NPN silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) were fully studied in this work, by means of 25-MeV Si, 10-MeV C1, 20-MeV Br, and 10-MeV Br ion irradiation, respectively. Electrical parameters such as the base current (IB), current gain (β), neutral base recombination (NBR), and Early voltage (VA) were investigated and used to evaluate the tolerance to heavy ion irradiation. Experimental results demonstrate that device degradations are indeed radiation-source-dependent, and the larger the ion nuclear energy loss is, the more the displacement damages are, and thereby the more serious the performance degradation is. The maximum degradation was observed in the transistors irradiated by 10-MeV Br. For 20-MeV and 10-MeV Br ion irradiation, an unexpected degradation in Ic was observed and Early voltage decreased with increasing ion fluence, and NBR appeared to slow down at high ion fluence. The degradations in SiGe HBTs were mainly attributed to the displacement damages created by heavy ion irradiation in the transistors. The underlying physical mechanisms are analyzed and investigated in detail. 展开更多
关键词 heavy ion irradiation displacement damage SiGe heterojunction bipolar transistor
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Common Base Four-Finger InGaAs/InP Double Heterojunction Bipolar Transistor with Maximum Oscillation Frequency 535 GHz 被引量:4
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作者 牛斌 王元 +4 位作者 程伟 谢自力 陆海燕 常龙 谢俊领 《Chinese Physics Letters》 SCIE CAS CSCD 2015年第7期175-178,共4页
A common base four-finger InOaAs/InP double heterojunction bipolar transistor with 535 OHz fmax by using the 0.5 μm emitter technology is fabricated. Multi-finger design is used to increase the input current. Common ... A common base four-finger InOaAs/InP double heterojunction bipolar transistor with 535 OHz fmax by using the 0.5 μm emitter technology is fabricated. Multi-finger design is used to increase the input current. Common base configuration is compared with common emitter configuration, and shows a smaller K factor at high frequency span, indicating a larger breakpoint frequency of maximum stable gain/maximum available gain (MSG/MAG) and thus a higher gain near the cut-off frequency, which is useful in THz amplifier design. 展开更多
关键词 INP INGAAS Common Base Four-Finger InGaAs/InP Double heterojunction bipolar transistor with Maximum Oscillation Frequency 535 GHz
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Laser-Induced Single Event Transients in Local Oxidation of Silicon and Deep Trench Isolation Silicon-Germanium Heterojunction Bipolar Transistors 被引量:2
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作者 李培 郭红霞 +2 位作者 郭旗 张晋新 魏莹 《Chinese Physics Letters》 SCIE CAS CSCD 2015年第8期204-207,共4页
We present a study on the single event transient (SET) induced by a pulsed laser in different silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) with the structure of local oxidation of silicon ... We present a study on the single event transient (SET) induced by a pulsed laser in different silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) with the structure of local oxidation of silicon (LOCOS) and deep trench isolation (DTI). The experimental results are discussed in detail and it is demonstrated that a SiGe HBT with the structure of LOCOS is more sensitive than the DTI SiGe HBT in the SET. Because of the limitation of the DTI structure, the charge collection of diffusion in the DTI SiGe HBT is less than that of the LOCOS SiGe HBT. The SET sensitive area of the LOCOS SiGe HBT is located in the eollector-substrate (C/S) junction, while the sensitive area of the DTI SiGe HBT is located near to the collector electrodes. 展开更多
关键词 LOCOS DTI hbt Laser-Induced Single Event Transients in Local Oxidation of Silicon and Deep Trench Isolation Silicon-Germanium heterojunction bipolar transistors
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Analytical base collector depletion capacitance in vertical SiGe heterojunction bipolar transistors fabricated on CMOS-compatible silicon on insulator 被引量:1
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作者 徐小波 张鹤鸣 +2 位作者 胡辉勇 马建立 许立军 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第1期672-676,共5页
The base-collector depletion capacitance for vertical SiGe npn heterojunction bipolar transistors (HBTs) on silicon on insulator (SOI) is split into vertical and lateral parts. This paper proposes a novel analytic... The base-collector depletion capacitance for vertical SiGe npn heterojunction bipolar transistors (HBTs) on silicon on insulator (SOI) is split into vertical and lateral parts. This paper proposes a novel analytical depletion capacitance model of this structure for the first time. A large discrepancy is predicted when the present model is compared with the conventional depletion model, and it is shown that the capacitance decreases with the increase of the reverse collector- base bias-and shows a kink as the reverse collector-base bias reaches the effective vertical punch-through voltage while the voltage differs with the collector doping concentrations, which is consistent with measurement results. The model can be employed for a fast evaluation of the depletion capacitance of an SOI SiGe HBT and has useful applications on the design and simulation of high performance SiGe circuits and devices. 展开更多
关键词 depletion capacitance heterojunction bipolar transistors thin film silicon on insulator SIGE
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Substrate bias effects on collector resistance in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator 被引量:1
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作者 徐小波 张鹤鸣 +2 位作者 胡辉勇 李妤晨 屈江涛 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第5期450-454,共5页
An analytical expression for the co/lector resistance of a novel vertical SiGe heterojunction bipolar transistor (HBT) on thin film silicon-on-insulator (SOI) is obtained with the substrate bias effects being cons... An analytical expression for the co/lector resistance of a novel vertical SiGe heterojunction bipolar transistor (HBT) on thin film silicon-on-insulator (SOI) is obtained with the substrate bias effects being considered. The resistance is found to decrease slowly and then quickly and to have kinks with the increase of the substrate-collector bias, which is quite different from that of a conventional bulk HBT. The model is consistent with the simulation result and the reported data and is useful to the frequency characteristic design of 0.13 μtm millimeter-wave SiGe SOI BiCMOS devices. 展开更多
关键词 collector resistance substrate bias effect SiGe heterojunction bipolar transistor thinfilm silicon-on-insulator
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Thermal stability improvement of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations using non-uniform finger spacing 被引量:1
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作者 陈亮 张万荣 +6 位作者 金冬月 沈珮 谢红云 丁春宝 肖盈 孙博韬 王任卿 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第1期667-671,共5页
A method of non-uniform finger spacing is proposed to enhance thermal stability of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations. Temperature distribution on the emi... A method of non-uniform finger spacing is proposed to enhance thermal stability of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations. Temperature distribution on the emitter fingers of a multi-finger SiGe heterojunction bipolar transistor is studied using a numerical electro-thermal model. The results show that the SiGe heterojunction bipolar transistor with non-uniform finger spacing has a small temperature difference between fingers compared with a traditional uniform finger spacing heterojunction bipolar transistor at the same power dissipation. What is most important is that the ability to improve temperature non-uniformity is not weakened as power dissipation increases. So the method of non-uniform finger spacing is very effective in enhancing the thermal stability and the power handing capability of power device. Experimental results verify our conclusions. 展开更多
关键词 heterojunction bipolar transistor thermal coupling power dissipation
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Physical modeling based on hydrodynamic simulation for the design of InGaAs/InP double heterojunction bipolar transistors 被引量:1
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作者 葛霁 刘洪刚 +2 位作者 苏永波 曹玉雄 金智 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第5期669-674,共6页
A physical model for scaling and optimizing InGaAs/InP double heterojunction bipolar transistors(DHBTs) based on hydrodynamic simulation is developed.The model is based on the hydrodynamic equation,which can accurat... A physical model for scaling and optimizing InGaAs/InP double heterojunction bipolar transistors(DHBTs) based on hydrodynamic simulation is developed.The model is based on the hydrodynamic equation,which can accurately describe non-equilibrium conditions such as quasi-ballistic transport in the thin base and the velocity overshoot effect in the depleted collector.In addition,the model accounts for several physical effects such as bandgap narrowing,variable effective mass,and doping-dependent mobility at high fields.Good agreement between the measured and simulated values of cutoff frequency,f t,and maximum oscillation frequency,f max,are achieved for lateral and vertical device scalings.It is shown that the model in this paper is appropriate for downscaling and designing InGaAs/InP DHBTs. 展开更多
关键词 InGaAs/InP double heterojunction bipolar transistors hydrodynamic simulation lateraland vertical scalable model
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Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors 被引量:1
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作者 Jianan Wei Yang Li +5 位作者 Wenlong Liao Fang Liu Yonghong Li Jiancheng Liu Chaohui He Gang Guo 《Chinese Physics B》 SCIE EI CAS CSCD 2022年第8期536-541,共6页
We investigate the angular dependence of proton-induced single event transient(SET) in silicon-germanium heterojunction bipolar transistors. Experimental results show that the overall SET cross section is almost indep... We investigate the angular dependence of proton-induced single event transient(SET) in silicon-germanium heterojunction bipolar transistors. Experimental results show that the overall SET cross section is almost independent of proton incident angle. However, the proportion of SET events with long duration and high integral charge collection grows significantly with the increasing angle. Monte Carlo simulations demonstrate that the integral cross section of proton incident events with high ionizing energy deposition in the sensitive volume tends to be higher at larger incident angles, which is associated with the angular distribution of proton-induced secondary particles and the geometry of sensitive volume. 展开更多
关键词 heterojunction bipolar transistor proton irradiation single event transient angular effect
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Heavy Ion and Laser Microbeam Induced Current Transients in SiGe Heterojunction Bipolar Transistor 被引量:1
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作者 Pei Li Chao-Hui He +4 位作者 Gang Guo Hong-Xia Guo Feng-Qi Zhang Jin-Xin Zhang Shu-Ting Shi 《Chinese Physics Letters》 SCIE CAS CSCD 2017年第10期100-103,共4页
Silicon-germanium (SiGe) hereto-junction bipolar transistor current transients induced by pulse laser and heavy iron are measured using a real-time digital oscilloscope. These transients induced by pulse laser and h... Silicon-germanium (SiGe) hereto-junction bipolar transistor current transients induced by pulse laser and heavy iron are measured using a real-time digital oscilloscope. These transients induced by pulse laser and heavy iron exhibit the same waveform and charge collection time except for the amplitude of peak current. Different laser energies and voltage biases under heavy ion irradiation also have impact on current transient, whereas the waveform remains unchanged. The position-correlated current transients suggest that the nature of the current transient is controlled by the behavior of the C/S junction. 展开更多
关键词 hbt Heavy Ion and Laser Microbeam Induced Current Transients in SiGe heterojunction bipolar transistor
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Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor
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作者 Jia-Nan Wei Chao-Hui He +2 位作者 Pei Li Yong-Hong Li Hong-Xia Guo 《Chinese Physics B》 SCIE EI CAS CSCD 2019年第7期375-380,共6页
This paper presents an investigation into the impact of proton-induced alteration of carrier lifetime on the singleevent transient(SET) caused by heavy ions in silicon–germanium heterojunction bipolar transistor(SiGe... This paper presents an investigation into the impact of proton-induced alteration of carrier lifetime on the singleevent transient(SET) caused by heavy ions in silicon–germanium heterojunction bipolar transistor(SiGe HBT).The ioninduced current transients and integrated charge collections under different proton fluences are obtained based on technology computer-aided design(TCAD) simulation.The results indicate that the impact of carrier lifetime alteration is determined by the dominating charge collection mechanism at the ion incident position and only the long-time diffusion process is affected.With a proton fluence of 5 × 1013 cm-2, almost no change is found in the transient feature, and the charge collection of events happened in the region enclosed by deep trench isolation(DTI), where prompt funneling collection is the dominating mechanism.Meanwhile, for the events happening outside DTI where diffusion dominates the collection process, the peak value and the duration of the ion-induced current transient both decrease with increasing proton fluence, leading to a great decrease in charge collection. 展开更多
关键词 silicon–germanium heterojunction bipolar transistor(SiGe hbt) proton irradiation MINORITY carrier lifetime single-event transient technology COMPUTER-AIDED design(TCAD) simulation
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A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation effects
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作者 徐小波 徐凯选 +1 位作者 张鹤鸣 秦珊珊 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第9期445-449,共5页
In this paper, we describe the saturation effect of a silicon germanium (SiGe) heterojunction bipolar transistor (HBT) fabricated on a thin silicon-on-insulator (SOI) with a step-by-step derivation of the model ... In this paper, we describe the saturation effect of a silicon germanium (SiGe) heterojunction bipolar transistor (HBT) fabricated on a thin silicon-on-insulator (SOI) with a step-by-step derivation of the model formulation. The collector injection width, the internal base-collector bias, and the hole density at the base-collector junction interface are analysed by considering the unique features of the internal and the external parts of the collector, as they are different from those of a bulk counterpart. 展开更多
关键词 saturation effect heterojunction bipolar transistor SIGE SILICON-ON-INSULATOR
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Thermal resistance matrix representation of thermal effects and thermal design in multi-finger power heterojunction bipolar transistors
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作者 金冬月 张万荣 +4 位作者 陈亮 付强 肖盈 王任卿 赵昕 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第6期277-282,共6页
The thermal resistance matrix including self-heating thermal resistance and thermal coupling resistance is presented to describe the thermal effects of multi-finger power heterojunction bipolar transistors. The depend... The thermal resistance matrix including self-heating thermal resistance and thermal coupling resistance is presented to describe the thermal effects of multi-finger power heterojunction bipolar transistors. The dependence of thermal resistance matrix on finger spacing is also investigated. It is shown that both self-heating thermal resistance and thermal coupling resistance are lowered by increasing the finger spacing, in which the downward dissipated heat path is widened and the heat flow from adjacent fingers is effectively suppressed. The decrease of self-heating thermal resistance and thermal coupling resistance is helpful for improving the thermal stability of power devices. Furthermore, with the aid of the thermal resistance matrix a 10-finger power heterojunction bipolar transistor (HBT) with non-uniform finger spacing is designed for high thermal stability. The optimized structure can effectively lower the peak temperature while maintaining a uniformity of the temperature profile at various biases and thus the device effectively may operate at a higher power level. 展开更多
关键词 heterojunction bipolar transistor POWER thermal stability thermal resistance matrix
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Designing power heterojunction bipolar transistors with non-uniform emitter finger lengths to achieve high thermal stability
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作者 金冬月 张万荣 +4 位作者 付强 陈亮 肖盈 王任卿 赵昕 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第7期259-265,共7页
With the aid of a thermal-electrical model, a practical method for designing multi-finger power heterojunction bipolar transistors with finger lengths divided in groups is proposed. The method can effectively enhance ... With the aid of a thermal-electrical model, a practical method for designing multi-finger power heterojunction bipolar transistors with finger lengths divided in groups is proposed. The method can effectively enhance the thermal stability of the devices without sacrificing the design time. Taking a 40-finger heterojunction bipolar transistor for example, the device with non-uniform emitter finger lengths is optimized and fabricated. Both the theoretical and the experimental results show that, for the optimum device, the peak temperature is lowered by 26.19 K and the maximum temperature difference is reduced by 56.67% when compared with the conventional heterojunction bipolar transistor with uniform emitter finger length. Furthermore, the ability to improve the uniformity of the temperature profile and to expand the thermal stable operation range is strengthened as the power level increases, which is ascribed to the improvement of the thermal resistance in the optimum device. A detailed design procedure is also summarized to provide a general guide for designing power heterojunction bipolar transistors with non-uniform finger lengths. 展开更多
关键词 heterojunction bipolar transistor high power thermal stability
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Weak avalanche multiplication in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator
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作者 徐小波 张鹤鸣 +2 位作者 胡辉勇 李妤晨 屈江涛 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第10期480-485,共6页
In this paper, we propose an analytical avalanche multiplication model for the next generation of SiGe silicon- on-insulator (SOI) heterojunction bipolar transistors (HBTs) and consider their vertical and lateral ... In this paper, we propose an analytical avalanche multiplication model for the next generation of SiGe silicon- on-insulator (SOI) heterojunction bipolar transistors (HBTs) and consider their vertical and lateral impact ionizations for the first time. Supported by experimental data, the analytical model predicts that the avalanche multiplication governed by impact ionization shows kinks and the impact ionization effect is small compared with that of the bulk HBT, resulting in a larger base-collector breakdown voltage. The model presented in the paper is significant and has useful applications in the design and simulation of the next generation of SiCe SOI BiCMOS technology. 展开更多
关键词 avalanche multiplication heterojunction bipolar transistor thin film silicon-on-insulator SiGe
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