We report our results on the modeling of the spectral response of the near-infrared（NIR） lattice-matched p-n-p In_（0.53）Ga_（0.47）As/InP heterojunction pbototransistors（HPTs）.The spectral response model is deve...We report our results on the modeling of the spectral response of the near-infrared（NIR） lattice-matched p-n-p In_（0.53）Ga_（0.47）As/InP heterojunction pbototransistors（HPTs）.The spectral response model is developed from the solution of the steady state continuity equations that dominate the excess optically generated minority-carriers in the active regions of the HPTs with accurate boundary-conditions.In addition,a detailed optical-power absorption profile is constructed for the device modeling.The calculated responsivity is in good agreement with the measured one for the incident radiation at980 nm,1310 nm,and 1550 nm.Furthermore,the variation in the responsivity of the device with the base region width is analyzed.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.61307044)the National Basic Research Program of China(Grant No.2012CB619200)+4 种基金the Natural Science Foundation of Jiangsu Province,China(Grant No.BK20130321)the Research Fund for the Doctoral Program of Higher Education of China(Grant No.20133201120009)the Open Project of Key Laboratory of Infrared Imaging Materials and Detectors,Chinese Academy of Sciences(IIMDKFJJ-15-06)the Scientific Research Foundation for the Returned Overseas Chinese Scholars,Ministry of Education of Chinathe Research Innovation Program for College Graduates of Jiangsu Province,China(Grant No.SJLX15-0600)
文摘We report our results on the modeling of the spectral response of the near-infrared（NIR） lattice-matched p-n-p In_（0.53）Ga_（0.47）As/InP heterojunction pbototransistors（HPTs）.The spectral response model is developed from the solution of the steady state continuity equations that dominate the excess optically generated minority-carriers in the active regions of the HPTs with accurate boundary-conditions.In addition,a detailed optical-power absorption profile is constructed for the device modeling.The calculated responsivity is in good agreement with the measured one for the incident radiation at980 nm,1310 nm,and 1550 nm.Furthermore,the variation in the responsivity of the device with the base region width is analyzed.
