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Simplified Method of Valence Band Offset Calculation at Strained Layer Heterojunction
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作者 ZHENG Yong-mei (Department of Physics, Xiamen University, Xiamen 361005, CHN) 《Semiconductor Photonics and Technology》 CAS 2000年第2期65-72,共8页
The average bond energy method is popularized and applied to study band offsets at strained layer heterojunctions. By careful examination of hydrostatic and uniaxial strain actions on the band offset parameter Emv,it ... The average bond energy method is popularized and applied to study band offsets at strained layer heterojunctions. By careful examination of hydrostatic and uniaxial strain actions on the band offset parameter Emv,it is found that the average band offset parameter Emv,av=Em-Ev, av remains basically unchanged under different strain conditions. Therefore, provided the band offset parameter before strain Emv,0 of bulk material is calculated, and the experiment values of deformation potential b and spin-orbit (SO) splitting energy △0 are quoted, the Emv at strained layer can be obtained by a simple and convenient algebraic calculation. Thus the valence band offset △Ev at strained layer heterojunction can also be predicted conveniently. This simplified calculation method is characterized by decreased calculation amount and increased conviction due to use as many as possible the experiment values. 展开更多
关键词 Average bond energy Deformation potential heterojunction band offset
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