Hg Cd Te面阵探测器是空间红外遥感相机的关键部件,随着性能需求的不断提高,器件的规模尺寸不断扩大。Hg Cd Te面阵探测器在常温下与承载板进行装配,但在深冷状态下工作,需要耐受200 K左右的温度波动。由于探测器与承载板的线膨胀系数...Hg Cd Te面阵探测器是空间红外遥感相机的关键部件,随着性能需求的不断提高,器件的规模尺寸不断扩大。Hg Cd Te面阵探测器在常温下与承载板进行装配,但在深冷状态下工作,需要耐受200 K左右的温度波动。由于探测器与承载板的线膨胀系数不匹配,温度波动会引起探测器翘曲变形,变形严重时,将导致探测器损伤。提出基于高导热碳纤维的Hg Cd Te大面阵探测器热适配结构,以碳纤维的轴向高热导率降低结构热阻,以碳纤维的极小抗弯截面模量实现热适配结构两端面间的刚度解耦。相对于探测器与承载板直粘,引入基于高导热碳纤维的热适配结构后,探测器与承载板间的热阻仅增加了约1%,而探测器热失配翘曲变形衰减了99.9%,解决了大面阵探测器与承载板间的热失配翘曲变形损伤问题。并对基于碳纤维的热适配结构制备工艺方案进行了简单介绍。展开更多
The persistent photoconductivity（PPC） of amorphous Hg（0.78）Cd（0.22）Te. In films has been studied under illumination by super-bandgap light（a He–Ne laser, hv=1.96 eV, 30 mW/cm^2） and sub-bandgap light（1000 K ...The persistent photoconductivity（PPC） of amorphous Hg（0.78）Cd（0.22）Te. In films has been studied under illumination by super-bandgap light（a He–Ne laser, hv=1.96 eV, 30 mW/cm^2） and sub-bandgap light（1000 K Blackbody source, the largest photon energies h vp=0.42 eV, 8.9 mW/cm^2） in the range of 80–300 K. The persistent photoconductivity effect increases with increase in illumination intensity and illumination time. However,it decreases with increase in working temperature. The non-exponential decay of photoconductivity implies the presence of continuous distribution of defect states in amorphous Hg（0.78）Cd（0.22）Te. In films. These results indicate that the decay of photoconductivity is not governed by the carrier trapped in the intrinsic defects, but it may be due to light-induced defects under light illumination.展开更多
文摘Hg Cd Te面阵探测器是空间红外遥感相机的关键部件,随着性能需求的不断提高,器件的规模尺寸不断扩大。Hg Cd Te面阵探测器在常温下与承载板进行装配,但在深冷状态下工作,需要耐受200 K左右的温度波动。由于探测器与承载板的线膨胀系数不匹配,温度波动会引起探测器翘曲变形,变形严重时,将导致探测器损伤。提出基于高导热碳纤维的Hg Cd Te大面阵探测器热适配结构,以碳纤维的轴向高热导率降低结构热阻,以碳纤维的极小抗弯截面模量实现热适配结构两端面间的刚度解耦。相对于探测器与承载板直粘,引入基于高导热碳纤维的热适配结构后,探测器与承载板间的热阻仅增加了约1%,而探测器热失配翘曲变形衰减了99.9%,解决了大面阵探测器与承载板间的热失配翘曲变形损伤问题。并对基于碳纤维的热适配结构制备工艺方案进行了简单介绍。
基金Project supported by the Natural Science Foundation of Yunnan Province (No. 2008CD176)
文摘The persistent photoconductivity（PPC） of amorphous Hg（0.78）Cd（0.22）Te. In films has been studied under illumination by super-bandgap light（a He–Ne laser, hv=1.96 eV, 30 mW/cm^2） and sub-bandgap light（1000 K Blackbody source, the largest photon energies h vp=0.42 eV, 8.9 mW/cm^2） in the range of 80–300 K. The persistent photoconductivity effect increases with increase in illumination intensity and illumination time. However,it decreases with increase in working temperature. The non-exponential decay of photoconductivity implies the presence of continuous distribution of defect states in amorphous Hg（0.78）Cd（0.22）Te. In films. These results indicate that the decay of photoconductivity is not governed by the carrier trapped in the intrinsic defects, but it may be due to light-induced defects under light illumination.
