Four-inch high quality crack-free AlN layer grown on a hightemperature annealed AlN template by MOCVD

In this work,based on physical vapor deposition and high-temperature annealing(HTA),the 4-inch crack-free high-quality AlN template is initialized.Benefiting from the crystal recrystallization during the HTA process,the FWHMs of X-ray rocking curves for(002)and(102)planes are encouragingly decreased to 62 and 282 arcsec,respectively.On such an AlN template,an ultra-thin AlN with a thickness of~700 nm grown by MOCVD shows good quality,thus avoiding the epitaxial lateral over-growth(ELOG)process in which 3-4μm AlN is essential to obtain the flat surface and high crystalline quality.The 4-inch scaled wafer provides an avenue to match UVC-LED with the fabrication process of traditional GaN-based blue LED,therefore significantly improving yields and decreasing cost.

Insight into the influence of high temperature annealing on the onset potential of Ti-doped hematite photoanodes for solar water splitting

For Ti-doped hematite photoanodes, high temperature annealing drastically increases the water oxidation plateau photocurrent, but also induces an anodic shift of onset potential by about 100 m V, thus hindering the performance under low applied bias. To the best of our knowledge, the effects of high temperature annealing on the onset potential have been rarely studied. Herein, both X-ray photoelectron spectroscopy（XPS） measurements and theoretical calculations indicated that the increase of surface Ti/Fe atomic ratio after high temperature annealing decreased the adsorption capacity of hydroxide ions on the hematite surface. Subsequently, the flatband potential（i.e., the theoretical onset potential） of Ti doped hematite photoanodes positively shifted, which was supported by the Mott-Schottky measurements.

Off-stoichiometry indexation of BiFeO_3 thin film on silicon by Rutherford backscattering spectrometry

BiFeO3 is a multiferroic material with physical properties very sensitive to its stoichiometry.BiFeO3 thin films on silicon substrate are prepared by the sol–gel method combined with layer-by-layer annealing and final annealing schemes.X-ray diffraction and scanning electron microscopy are employed to probe the phase structures and surface morphologies.Using Rutherford backscattering spectrometry to quantify the nonstoichiometries of BiFeO3 thin films annealed at 100？C–650？C.The results indicate that Bi and Fe cations are close to the stoichiometry of BiFeO3,whereas the deficiency of O anions possibly plays a key role in contributing to the leakage current of 10^-5 A/cm^2 in a wide range of applied voltage rather than the ferroelectric polarizations of BiFeO3 thin films annealed at high temperature.

The Mechanism of Heating Rate on the Secondary Recrystallization Evolution in Grain Oriented Silicon Steel

Grain-oriented silicon steels were prepared at different heating rates during high temperature annealing,in which the evolution of magnetic properties,grain orientations and precipitates were studied.To illustrate the Zener factor,the diameter and number density of precipitates of interrupted testing samples were statistically calculated.The effect of precipitate ripening on the Goss texture and magnetic property was investigated.Data indicated that the trend of Zener factor was similar under different heating rates,first increasing and then decreasing,and that the precipitate maturing was greatly inhibited as the heating rate increased.Secondary recrystallization was developed at the temperature of 1010℃when a heating rate of 5℃/h was used,resulting in Goss,Brass and{110}<227>oriented grains growing abnormally and a magnetic induction intensity of 1.90T.Furthermore,increasing the heating rate to 20℃/h would inhibit the development of undesirable oriented grains and obtain a sharp Goss texture.However,when the heating rate was extremely fast,such as 40℃/h,poor secondary recrystallization was developed with many island grains,corresponding to a decrease in magnetic induction intensity to 1.87 T.At a suitable heating rate of 20℃/h,the sharpest Goss texture and the highest magnetic induction of 1.94 T with an onset secondary recrystallization temperature of 1020℃were found among the experimental variables in this study.The heating rate affected the initial temperature of secondary recrystallization by controlling the maturation of precipitates,leading to the deviation and dispersion of Goss texture,thereby reducing the magnetic properties.

Study on irradiation effect and damage mechanism in cascode GaN HEMT irradiated by 10 MeV electron

This study investigated the irradiation effect of cascode-structure GaN HEMT(High Electron Mobility Transistor)devices,employing high-energy electrons with an energy of 10 MeV and irradiation doses ranging from 5 to 80 Mrad(Si).The variation of electrical properties of the device under annealing condition was analyzed.Geant4 and TCAD simulations were used to analyze the irradiation effect and damage mechanisms.The results show that the threshold voltage has obvious negative drift and the drain current increases after irradiation.The threshold voltage deviation amplitude of the device increases with the increase of irradiation dose,and the maximum deviation is 1.41V.Annealing at high temperatures(80℃,120℃ and 145℃)partially restores the electrical properties,with a 0.49 V restoration in threshold voltage at 145℃.Geant4 simulations reveal that enhanced Si MOSFET is more susceptible to total dose effects.TCAD simulations of enhanced Si MOSFET devices demonstrate an increase in electric field intensity,trapped electron concentration,and hole concentration in Si and SiO_(2) layers with the increase of irradiation dose.These findings can provide support for the space application and irradiation hardening of cascode GaN HEMT devices.