采用衬底同步加热磁控溅射的高介电BST材料作为栅绝缘层,研制了BST/Al GaN/GaNMIS结构HEMT器件。通过对器件直流和高频特性的测试以及与同样厚度Si N MIS结构对比,分析了高介电BST材料作为栅绝缘层对Al GaN/GaN MIS HEMT器件性能的影响...采用衬底同步加热磁控溅射的高介电BST材料作为栅绝缘层,研制了BST/Al GaN/GaNMIS结构HEMT器件。通过对器件直流和高频特性的测试以及与同样厚度Si N MIS结构对比,分析了高介电BST材料作为栅绝缘层对Al GaN/GaN MIS HEMT器件性能的影响。使用高介电BST材料作为栅绝缘层可以改善器件的线性特性和跨导特性,提高器件栅的正向工作电压,并有效降低Al GaN/GaN HEMT器件的夹断电压。同时,由于只引入很薄一层高介电材料作为栅绝缘层,器件的高频特性没有显著降低,BST/Al GaN/GaN MIS HEMT器件的电流增益截止频率达到23GHz。展开更多
Felt base carbon/carbon composites fabricated by super-high pressure impregnation carbonization process (SPIC) were heat treated at high temperature 2773K. The oxidation properties of felt base carbon/carbon composite...Felt base carbon/carbon composites fabricated by super-high pressure impregnation carbonization process (SPIC) were heat treated at high temperature 2773K. The oxidation properties of felt base carbon/carbon composites were investigated at different temperatures (773-1173K), and the microstructures of carbon/carbon composites were studied by SEM and X-ray diffraction. The experimental results showed that the inter-laminar distance of (002) plane (d002) deceased while the microcrystalline stack height (Lc) increased. The oxidation rate of felt base carbon/carbon composites was invari-able at certain temperatures. The oxidation mechanism of carbon/carbon composites changed remarkably at the oxidation temperature 973K. At the initial oxidation stage of carbon/carbon composites, carbon matrix was oxidized much more rapidly than carbon felt.展开更多
We present an AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor （MIS-HEMT） with an NbAIO high-k dielectric deposited by atomic layer deposition （ALD）. Surface morphology of samples are obse...We present an AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor （MIS-HEMT） with an NbAIO high-k dielectric deposited by atomic layer deposition （ALD）. Surface morphology of samples are observed by atomic force microscopy （AFM）, indicating that the ALD NbA10 has an excellent-property surface. Moreover, the sharp transition from depletion to accumulation in capacitance voltage （C-V）curse of MIS-HEMT demonstrates the high quality bulk and interface properties of NbA10 on A1GaN. The fabricated MIS-HEMT with a gate length of 0.5 μm exhibits a maximum drain current of 960 mA/mm, and the reverse gate leakage current is almost 3 orders of magnitude lower than that of reference HEMT. Based on the improved direct-current operation, the NbA10 can be considered to be a potential gate oxide comparable to other dielectric insulators.展开更多
AIM To evaluate the levels of mi R-192-5 p in non-alcoholic fatty liver disease(NAFLD) models and demonstrate the role of mi R-192-5 p in lipid accumulation. METHODS Thirty Sprague Dawley rats were randomly divided in...AIM To evaluate the levels of mi R-192-5 p in non-alcoholic fatty liver disease(NAFLD) models and demonstrate the role of mi R-192-5 p in lipid accumulation. METHODS Thirty Sprague Dawley rats were randomly divided into three groups, which were given a standard diet, a high-fat diet(HFD), and an HFD with injection of liraglutide. At the end of 16 weeks, hepatic mi R-192-5 p and stearoyl-Co A desaturase 1(SCD-1) levels were measured. Mi R-192-5 p mimic and inhibitor and SCD-1 si RNA were transfected into Huh7 cells exposed to palmitic acid(PA). Lipid accumulation was evaluated by oil red O staining and triglyceride assays. Direct interaction was validated by dual-luciferase reporter gene assays.RESULTS The HFD rats showed a 0.46-fold decrease and a 3.5-fold increase in hepatic mi R-192-5 p and SCD-1 protein levels compared with controls, respectively, which could be reversed after disease remission by liraglutide injection(P < 0.01). The Huh7 cells exposed to PA also showed down-regulation and up-regulation of mi R-192-5 p and SCD-1 protein levels, respectively(P < 0.01). Transfection with mi R-192-5 p mimic and inhibitor in Huh7 cells induced dramatic repression and promotion of SCD-1 protein levels, respectively(P < 0.01). Luciferase activity was suppressed and enhanced by mi R-192-5 p mimic and inhibitor, respectively, in wild-type SCD-1(P < 0.01) but not in mutant SCD-1. Mi R-192-5 p overexpression reduced lipid accumulation significantly in PA-treated Huh7 cells, and SCD-1 si RNA transfection abrogated the lipid deposition aggravated by mi R-192-5 p inhibitor(P < 0.01).CONCLUSION This study demonstrates that mi R-192-5 p has a negative regulatory role in lipid synthesis, which is mediated through its direct regulation of SCD-1.展开更多
基金Supported by the National Natural Science Foundation of China(61822407,62074161,62004213)the National Key Research and De-velopment Program of China under(2018YFE0125700)。
基金Supported by the National Natural Science Foundation of China (61822407,62074161,62004213)the National Key Research and Development Program of China under (2018YFE0125700)。
文摘采用衬底同步加热磁控溅射的高介电BST材料作为栅绝缘层,研制了BST/Al GaN/GaNMIS结构HEMT器件。通过对器件直流和高频特性的测试以及与同样厚度Si N MIS结构对比,分析了高介电BST材料作为栅绝缘层对Al GaN/GaN MIS HEMT器件性能的影响。使用高介电BST材料作为栅绝缘层可以改善器件的线性特性和跨导特性,提高器件栅的正向工作电压,并有效降低Al GaN/GaN HEMT器件的夹断电压。同时,由于只引入很薄一层高介电材料作为栅绝缘层,器件的高频特性没有显著降低,BST/Al GaN/GaN MIS HEMT器件的电流增益截止频率达到23GHz。
文摘Felt base carbon/carbon composites fabricated by super-high pressure impregnation carbonization process (SPIC) were heat treated at high temperature 2773K. The oxidation properties of felt base carbon/carbon composites were investigated at different temperatures (773-1173K), and the microstructures of carbon/carbon composites were studied by SEM and X-ray diffraction. The experimental results showed that the inter-laminar distance of (002) plane (d002) deceased while the microcrystalline stack height (Lc) increased. The oxidation rate of felt base carbon/carbon composites was invari-able at certain temperatures. The oxidation mechanism of carbon/carbon composites changed remarkably at the oxidation temperature 973K. At the initial oxidation stage of carbon/carbon composites, carbon matrix was oxidized much more rapidly than carbon felt.
基金supported by the State Key Program and Major Program of National Natural Science Foundation of China (Grant Nos. 60736033 and 60890191)
文摘We present an AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor （MIS-HEMT） with an NbAIO high-k dielectric deposited by atomic layer deposition （ALD）. Surface morphology of samples are observed by atomic force microscopy （AFM）, indicating that the ALD NbA10 has an excellent-property surface. Moreover, the sharp transition from depletion to accumulation in capacitance voltage （C-V）curse of MIS-HEMT demonstrates the high quality bulk and interface properties of NbA10 on A1GaN. The fabricated MIS-HEMT with a gate length of 0.5 μm exhibits a maximum drain current of 960 mA/mm, and the reverse gate leakage current is almost 3 orders of magnitude lower than that of reference HEMT. Based on the improved direct-current operation, the NbA10 can be considered to be a potential gate oxide comparable to other dielectric insulators.
基金Supported by National Key R&D Program of China No.2017YFC0908900National Key Basic Research Project,No.2012CB517501National Natural Science Foundation of China,No.81470840 and No.81600464
文摘AIM To evaluate the levels of mi R-192-5 p in non-alcoholic fatty liver disease(NAFLD) models and demonstrate the role of mi R-192-5 p in lipid accumulation. METHODS Thirty Sprague Dawley rats were randomly divided into three groups, which were given a standard diet, a high-fat diet(HFD), and an HFD with injection of liraglutide. At the end of 16 weeks, hepatic mi R-192-5 p and stearoyl-Co A desaturase 1(SCD-1) levels were measured. Mi R-192-5 p mimic and inhibitor and SCD-1 si RNA were transfected into Huh7 cells exposed to palmitic acid(PA). Lipid accumulation was evaluated by oil red O staining and triglyceride assays. Direct interaction was validated by dual-luciferase reporter gene assays.RESULTS The HFD rats showed a 0.46-fold decrease and a 3.5-fold increase in hepatic mi R-192-5 p and SCD-1 protein levels compared with controls, respectively, which could be reversed after disease remission by liraglutide injection(P < 0.01). The Huh7 cells exposed to PA also showed down-regulation and up-regulation of mi R-192-5 p and SCD-1 protein levels, respectively(P < 0.01). Transfection with mi R-192-5 p mimic and inhibitor in Huh7 cells induced dramatic repression and promotion of SCD-1 protein levels, respectively(P < 0.01). Luciferase activity was suppressed and enhanced by mi R-192-5 p mimic and inhibitor, respectively, in wild-type SCD-1(P < 0.01) but not in mutant SCD-1. Mi R-192-5 p overexpression reduced lipid accumulation significantly in PA-treated Huh7 cells, and SCD-1 si RNA transfection abrogated the lipid deposition aggravated by mi R-192-5 p inhibitor(P < 0.01).CONCLUSION This study demonstrates that mi R-192-5 p has a negative regulatory role in lipid synthesis, which is mediated through its direct regulation of SCD-1.
