BACKGROUND： Many studies have evaluated the role of vascular endothelial growth factor （VEGF） in traumatic brain edema and hemorrhagic brain edema. OBJECTIVE： To observe the effects of VEGF expression on permeabil...BACKGROUND： Many studies have evaluated the role of vascular endothelial growth factor （VEGF） in traumatic brain edema and hemorrhagic brain edema. OBJECTIVE： To observe the effects of VEGF expression on permeability of the blood-brain barrier （BBB） during high-altitude and hypoxia exposure, and to investigate the correlation between VEGF expression and BBB permeability with regard to Evans blue staining and brain edema during high-altitude exposure. DESIGN, TIME AND SETTING： The randomized, controlled, animal study was performed at the Tanggula Etape, Central Laboratory of Chengdu Medical College, and Central Laboratory of General Hospital of Chengdu Military Area Command of Chinese PLA, China, from July 2003 to November 2004. MATERIALS： Quantitative RT-PCR kit （Sigma, USA）, VEGF ELISA kit （Biosource, USA）, and Evans blue （Jingchun, China） were acquired for this study. METHODS： A total of 180 Wistar rats were equally and randomly assigned to 15 groups： low-altitude （500 m）, middle-altitude （2 880 m）, high-altitude （4 200 m）, super-high-altitude （5 000 m）, 1,3, 5, 7, 9, 11, 13, 15, 17, 19, and 21 days of super high-altitude exposure. Wistar rats were exposed to various altitude gradients to establish a hypoxia model. MAIN OUTCOME MEASURES： Brain water content was calculated according to the wet-to-dry weight ratio. BBB permeability to Evans blue was determined by colorimetric method. VEGF mRNA and protein levels in brain tissues were detected using RT-PCR and double-antibody sandwich ELISA. RESULTS： Brain water content, BBB permeability to Evans blue, and VEGF mRNA and protein levels in brain tissues increased with increasing altitude and prolonged exposure to altitude. The greatest increase was determined on day 9 upon ascending 5 000 m. Simultaneously, VEGF expression positively correlated to BBB permeability of Evans blue and brain water content （r = 0.975, 0.917, P〈 0.01）. CONCLUSION： Increased VEGF protein and mRNA expression was responsible for increased BBB permeability, which may be an important mechanism underlying brain edema during high-altitude exposure.展开更多
A novel trench MOS barrier Schottky diode（TMBS） device with a high-k material introduced into the gate insulator is reported, which is named high-k TMBS. By simulation with Medici, it is found that the high-k TMBS c...A novel trench MOS barrier Schottky diode（TMBS） device with a high-k material introduced into the gate insulator is reported, which is named high-k TMBS. By simulation with Medici, it is found that the high-k TMBS can have 19.8% lower leakage current while maintaining the same breakdown voltage and forward turn-on voltage compared with the conventional regular trench TMBS.展开更多
In this study, an etched-SiO-film grating fabrication technique based on solute-solvent separation soft lithography is developed. By using this new technique, high temperature grating with frequency of 600 lines/mm is...In this study, an etched-SiO-film grating fabrication technique based on solute-solvent separation soft lithography is developed. By using this new technique, high temperature grating with frequency of 600 lines/mm is successfully fabricated on the surface of thermal barrier coatings(TBCs). During the fabrication process, the microstructure and chemical compositions of ceramic coating before and after polishing is analyzed with a digital microscope and the energy dispersive X-ray spectroscope(EDS) in scanning electron microscope(SEM). And then the grating on TBCs is heated at the temperature ranging from 300℃ to 1000℃ for examining the high temperature resistance. In the practical application, the displacement and strain field around the crack on the ceramic surface are investigated with geometry phase analysis(GPA). The successful results verify that the etched-SiO-film grating has a good oxidation resistance and can be applied to high temperature deformation measurement of TBCs.展开更多
We demonstrate nearly i e V GaN0.03As0.97 /In0.09 Ga0.91As strain-compensated short-period superlattice solar cells by all solid-state molecular beam epitaxy. The optimal period thickness for the superlattice growth i...We demonstrate nearly i e V GaN0.03As0.97 /In0.09 Ga0.91As strain-compensated short-period superlattice solar cells by all solid-state molecular beam epitaxy. The optimal period thickness for the superlattice growth is achieved to realize high structural quality. Meanwhile, the annealing conditions are optimized to realize a pho- toluminescence （PL） at a low temperature. However, no PL signal is detected at room temperature, which could be reflected by a lower open-circuit voltage of the fabricated devices. The GaN0.03As0.97/In0.09Ga0.91As super- lattice solar cells show a reasonably-high short-circuit current density （Jsc） of over lOmA/cm2. Eurthermore, a concentration behavior is measured, which shows a linear relationship between Jsc and concentration ratios. The extrapolated ideality factor and saturated current density by the concentration action are in good agreement with that extracted by the dark case of the p-i-n diodes.展开更多
4H-SiC junction barrier Schottky （JBS） diodes with a high-temperature annealed resistive termination extension （HARTE） are designed, fabricated and characterized in this work. The differential specific on-state re...4H-SiC junction barrier Schottky （JBS） diodes with a high-temperature annealed resistive termination extension （HARTE） are designed, fabricated and characterized in this work. The differential specific on-state resistance of the device is as low as 3.64 mΩ·cm^2 with a total active area of 2.46× 10 ^-3 cm^2. Ti is the Schottky contact metal with a Schottky barrier height of 1.08 V and a low onset voltage of 0.7 V. The ideality factor is calculated to be 1.06. Al implantation annealing is performed at 1250 ℃ in Ar, while good reverse characteristics are achieved. The maximum breakdown voltage is 1000 V with a leakage current of 9× 10^-5 A on chip level. These experimental results show good consistence with the simulation results and demonstrate that high-performance 4H-SiC JBS diodes can be obtained based on the double HARTE structure.展开更多
By solving Poisson＇s equation in both semiconductor and gate insulator regions in the cylindrical coordinates, an analytical model for a dual-material surrounding-gate （DMSG） metal-oxide semiconductor field-effect ...By solving Poisson＇s equation in both semiconductor and gate insulator regions in the cylindrical coordinates, an analytical model for a dual-material surrounding-gate （DMSG） metal-oxide semiconductor field-effect transistor （MOSFET） with a high-k gate dielectric has been developed. Using the derived model, the influences of fringing-induced barrier lowering （FIBL） on surface potential, subthreshold current, DIBL, and subthreshold swing are investigated. It is found that for the same equivalent oxide thickness, the gate insulator with high-k dielectric degrades the short-channel performance of the DMSG MOSFET. The accuracy of the analytical model is verified by the good agreement of its results with that obtained from the ISE three-dimensional numerical device simulator.展开更多
The fringing-induced barrier lowering（FIBL） effect of sub-100 nm MOSFETs with high-k gate dielectrics is investigated using a two-dimensional device simulator.An equivalent capacitance theory is proposed to explain ...The fringing-induced barrier lowering（FIBL） effect of sub-100 nm MOSFETs with high-k gate dielectrics is investigated using a two-dimensional device simulator.An equivalent capacitance theory is proposed to explain the physics mechanism of the FIBL effect.The FIBL effect is enhanced and the short channel performance is degraded with increasing capacitance.Based on equivalent capacitance theory,the influences of channel length,junction depth,gate/lightly doped drain（LDD） overlap length,spacer material and spacer width on FIBL is thoroughly investigated.A stack gate dielectric is presented to suppress the FIBL effect.展开更多
An enhancement-mode （E-mode） A1GaN/GaN high electron mobility transistor （HEMTs） was fabricated with 15-nm A1GaN barrier layer. E-mode operation was achieved by using fluorine plasma treatment and post-gate rapid ...An enhancement-mode （E-mode） A1GaN/GaN high electron mobility transistor （HEMTs） was fabricated with 15-nm A1GaN barrier layer. E-mode operation was achieved by using fluorine plasma treatment and post-gate rapid thermal annealing. The thin barrier depletion-HEMTs with a threshold voltage typically around -1.7 V, which is higher than that of the 22-nm barrier depletion-mode HEMTs （-3.5 V）. Therefore, the thin barrier is emerging as an excellent candidate to realize the enhancement-mode operation. With 0.6-tim gate length, the devices treated by fluorine plasma for 150-W RF power at 150 s exhibited a threshold voltage of 1.3 V. The maximum drain current and maximum transconductance are 300 mA/mm, and 177 mS/ram, respectively. Compared with the 22-nm barrier E-mode devices, VT of the thin barrier HEMTs is much more stable under the gate step-stress,展开更多
基金Supported by:the Tackle Key Problem in Science and Technology during the "11~(th) Five-Year Plan" Period of Chinese PLA,No.06G030
文摘BACKGROUND： Many studies have evaluated the role of vascular endothelial growth factor （VEGF） in traumatic brain edema and hemorrhagic brain edema. OBJECTIVE： To observe the effects of VEGF expression on permeability of the blood-brain barrier （BBB） during high-altitude and hypoxia exposure, and to investigate the correlation between VEGF expression and BBB permeability with regard to Evans blue staining and brain edema during high-altitude exposure. DESIGN, TIME AND SETTING： The randomized, controlled, animal study was performed at the Tanggula Etape, Central Laboratory of Chengdu Medical College, and Central Laboratory of General Hospital of Chengdu Military Area Command of Chinese PLA, China, from July 2003 to November 2004. MATERIALS： Quantitative RT-PCR kit （Sigma, USA）, VEGF ELISA kit （Biosource, USA）, and Evans blue （Jingchun, China） were acquired for this study. METHODS： A total of 180 Wistar rats were equally and randomly assigned to 15 groups： low-altitude （500 m）, middle-altitude （2 880 m）, high-altitude （4 200 m）, super-high-altitude （5 000 m）, 1,3, 5, 7, 9, 11, 13, 15, 17, 19, and 21 days of super high-altitude exposure. Wistar rats were exposed to various altitude gradients to establish a hypoxia model. MAIN OUTCOME MEASURES： Brain water content was calculated according to the wet-to-dry weight ratio. BBB permeability to Evans blue was determined by colorimetric method. VEGF mRNA and protein levels in brain tissues were detected using RT-PCR and double-antibody sandwich ELISA. RESULTS： Brain water content, BBB permeability to Evans blue, and VEGF mRNA and protein levels in brain tissues increased with increasing altitude and prolonged exposure to altitude. The greatest increase was determined on day 9 upon ascending 5 000 m. Simultaneously, VEGF expression positively correlated to BBB permeability of Evans blue and brain water content （r = 0.975, 0.917, P〈 0.01）. CONCLUSION： Increased VEGF protein and mRNA expression was responsible for increased BBB permeability, which may be an important mechanism underlying brain edema during high-altitude exposure.
基金Project supported by the National Basic Research Program of China(Grant No.2011CBA00607)the National Natural Science Foundation of China(Grant Nos.61106089 and 61376097)the Zhejiang Provincial Natural Science Foundation of China(Grant No.LR14F040001)
文摘A novel trench MOS barrier Schottky diode（TMBS） device with a high-k material introduced into the gate insulator is reported, which is named high-k TMBS. By simulation with Medici, it is found that the high-k TMBS can have 19.8% lower leakage current while maintaining the same breakdown voltage and forward turn-on voltage compared with the conventional regular trench TMBS.
基金financially supported by the National Natural Science Foundation of China(11672153,11232008)
文摘In this study, an etched-SiO-film grating fabrication technique based on solute-solvent separation soft lithography is developed. By using this new technique, high temperature grating with frequency of 600 lines/mm is successfully fabricated on the surface of thermal barrier coatings(TBCs). During the fabrication process, the microstructure and chemical compositions of ceramic coating before and after polishing is analyzed with a digital microscope and the energy dispersive X-ray spectroscope(EDS) in scanning electron microscope(SEM). And then the grating on TBCs is heated at the temperature ranging from 300℃ to 1000℃ for examining the high temperature resistance. In the practical application, the displacement and strain field around the crack on the ceramic surface are investigated with geometry phase analysis(GPA). The successful results verify that the etched-SiO-film grating has a good oxidation resistance and can be applied to high temperature deformation measurement of TBCs.
基金Supported by the National Natural Science Foundation of China under Grant No 61274134the University of Science and Technology Beijing Talents Start-up Program under Grant No 06105033the International Cooperation Projects of Suzhou City under Grant No SH201215
文摘We demonstrate nearly i e V GaN0.03As0.97 /In0.09 Ga0.91As strain-compensated short-period superlattice solar cells by all solid-state molecular beam epitaxy. The optimal period thickness for the superlattice growth is achieved to realize high structural quality. Meanwhile, the annealing conditions are optimized to realize a pho- toluminescence （PL） at a low temperature. However, no PL signal is detected at room temperature, which could be reflected by a lower open-circuit voltage of the fabricated devices. The GaN0.03As0.97/In0.09Ga0.91As super- lattice solar cells show a reasonably-high short-circuit current density （Jsc） of over lOmA/cm2. Eurthermore, a concentration behavior is measured, which shows a linear relationship between Jsc and concentration ratios. The extrapolated ideality factor and saturated current density by the concentration action are in good agreement with that extracted by the dark case of the p-i-n diodes.
基金supported by the National Natural Science Foundation of China (Grant No. 51102225)the Natural Science Foundation of Beijing City, China (Grant No. 4132076)the Youth Innovation Promotion Association, Chinese Academy of Sciences
文摘4H-SiC junction barrier Schottky （JBS） diodes with a high-temperature annealed resistive termination extension （HARTE） are designed, fabricated and characterized in this work. The differential specific on-state resistance of the device is as low as 3.64 mΩ·cm^2 with a total active area of 2.46× 10 ^-3 cm^2. Ti is the Schottky contact metal with a Schottky barrier height of 1.08 V and a low onset voltage of 0.7 V. The ideality factor is calculated to be 1.06. Al implantation annealing is performed at 1250 ℃ in Ar, while good reverse characteristics are achieved. The maximum breakdown voltage is 1000 V with a leakage current of 9× 10^-5 A on chip level. These experimental results show good consistence with the simulation results and demonstrate that high-performance 4H-SiC JBS diodes can be obtained based on the double HARTE structure.
基金supported by the Fundamental Research Funds for the Central Universities (Grant No. K50511250001)the National Natural Science Foundation of China (Grant No. 61076101)
文摘By solving Poisson＇s equation in both semiconductor and gate insulator regions in the cylindrical coordinates, an analytical model for a dual-material surrounding-gate （DMSG） metal-oxide semiconductor field-effect transistor （MOSFET） with a high-k gate dielectric has been developed. Using the derived model, the influences of fringing-induced barrier lowering （FIBL） on surface potential, subthreshold current, DIBL, and subthreshold swing are investigated. It is found that for the same equivalent oxide thickness, the gate insulator with high-k dielectric degrades the short-channel performance of the DMSG MOSFET. The accuracy of the analytical model is verified by the good agreement of its results with that obtained from the ISE three-dimensional numerical device simulator.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.60936005 and 61076097)the Cultivation Fund of the Key Scientific and Technical Innovation Project of Ministry of Education of China(Grant No.708083)the Fundamental Research Funds for the Central Universities,China(Grant No.20110203110012)
文摘The fringing-induced barrier lowering（FIBL） effect of sub-100 nm MOSFETs with high-k gate dielectrics is investigated using a two-dimensional device simulator.An equivalent capacitance theory is proposed to explain the physics mechanism of the FIBL effect.The FIBL effect is enhanced and the short channel performance is degraded with increasing capacitance.Based on equivalent capacitance theory,the influences of channel length,junction depth,gate/lightly doped drain（LDD） overlap length,spacer material and spacer width on FIBL is thoroughly investigated.A stack gate dielectric is presented to suppress the FIBL effect.
基金supported by the Major Program and State Key Program of National Natural Science Foundation of China (GrantNos. 60890191 and 60736033)the National Key Science & Technology Special Project (Grant No. 2008ZX01002-002)
文摘An enhancement-mode （E-mode） A1GaN/GaN high electron mobility transistor （HEMTs） was fabricated with 15-nm A1GaN barrier layer. E-mode operation was achieved by using fluorine plasma treatment and post-gate rapid thermal annealing. The thin barrier depletion-HEMTs with a threshold voltage typically around -1.7 V, which is higher than that of the 22-nm barrier depletion-mode HEMTs （-3.5 V）. Therefore, the thin barrier is emerging as an excellent candidate to realize the enhancement-mode operation. With 0.6-tim gate length, the devices treated by fluorine plasma for 150-W RF power at 150 s exhibited a threshold voltage of 1.3 V. The maximum drain current and maximum transconductance are 300 mA/mm, and 177 mS/ram, respectively. Compared with the 22-nm barrier E-mode devices, VT of the thin barrier HEMTs is much more stable under the gate step-stress,
