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Influence of total gas flow rate on microcrystalline silicon films prepared by VHF-PECVD
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作者 高艳涛 张晓丹 +4 位作者 赵颖 孙健 朱峰 魏长春 陈飞 《Chinese Physics B》 SCIE EI CAS CSCD 2006年第5期1110-1113,共4页
Hydrogenated microcrystalline silicon (μc-Si:H) films are fabricated by very high frequency plasma enhanced chemical vapour deposition (VHF-PECVD) at a silane concentration of 7% and a varying total gas flow ra... Hydrogenated microcrystalline silicon (μc-Si:H) films are fabricated by very high frequency plasma enhanced chemical vapour deposition (VHF-PECVD) at a silane concentration of 7% and a varying total gas flow rate (H2+SiH4). Relations between the total gas flow rate and the electrical and structural properties as well as deposition rate of the films are studied. The results indicate that with the total gas flow rate increasing the photosensitivity and deposition rate increase, but the crystalline volume fraction (Xc) and dark conductivity decrease. And the intensity of (220) peak first increases then decreases with the increase of the total gas flow rate. The cause for the changes in the structure and deposition rate of the films with the total gas flow rate is investigated using optical emission spectroscopy (OES). 展开更多
关键词 very high frequency plasma enhanced chemical vapour deposition intrinsic microcrystalline silicon gas flow rate
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