Improvement of Performance of Organic Light-Emitting Diodes with Both a MoO3 Hole Injection Layer and a MoO3 Doped Hole Transport Layer

We improve the performance of organic light-emitting diodes （OLEDs） with both a MoO3 hole injection layer （HIL） and a MoO3 doped hole transport layer （HTL）, and present a systematical and comparative investigation on these devices. Compared with OLEDs with only MoO3 HIL or MoO3 doped HTL, OLEDs with both MoO3 HIL and MoO3 doped HTL show superior performance in driving voltage, power efficiency, and stability. Based on the typical NPB/Alq3 heterojunction structure, OLEDs with both MoO3 HIL and MoO3 doped HTL show a driving voltage of 5.4 V and a power efficiency of 1.41 lm/W for 1000 cd/m2, and a lifetime of around 0. 88 h with an initial luminance of 5268 cd/m2 under a constant current of 190 mA/cm2 operation in air without encapsulation. While OLEDs with only MoO3 HIL or MoO3 doped HTL show higher driving voltages of 6.4 V or 5.8 V and lower power efficiencies of 1.201m/W or 1.341m/W for 1000cd/m2, and a shorter lifetime of 0.33 or 0.60h with an initial luminance of around 5122 or 5300cd/m2 under a constant current of 200 or 216mA/cm2 operation. Our results demonstrate clearly that using both MoO3 HIL and MoO3 doped HTL is a simple and effective approach to simultaneoasly improve both the hole injection and transport efficiency, resulting from the lowered energy barrier at the anode interface and the increased hole carrier density in MoO3 doped HTL.

A novel monoclinic phase and electrically tunable magnetism of van der Waals layered magnet CrTe2

Exploring the novel structural phase of van der Waals(vdW) magnets would promote the development of spintronics.Here, through first-principles calculations, we report a novel monoclinic structure of vdW layered 1T-CrTe2, which is one of the popular vdW magnets normally exhibiting a trigonal structure. The new monoclinic phase emerges from a switchable magnetic state between ferromagnetism and antiferromagnetism through changing hole doping concentration, which suggests a practical approach to obtain such a structure. The results of phonon dispersion and energy analysis convince us that the monoclinic structure is a metastable phase even without hole doping. When the hole doping concentration increases,the stability analysis indicates the preference for a novel monoclinic phase rather than a conventional trigonal phase, and meanwhile, the magnetic properties are accordingly tuned. This work provides new insights into the phase engineering of the chalcogenide family and the electrical control of magnetism of vdW layered magnets.

Single crystal growth and electronic structure of Rh-doped Sr_(3)Ir_(2)O_(7)

Ruddlesden-Popper iridate Sr_(3)Ir_(2)O_(7)is a spin-orbit coupled Mott insulator.Hole doped Sr_(3)Ir_(2)O_(7)provides an ideal platform to study the exotic quantum phenomena that occur near the metal-insulator transition(MIT)region.Rh substitution of Ir is an effective method to induce hole doping into Sr_(3)Ir_(2)O_(7).However,the highest doping level reported in Sr_(3)(Ir_(1-x)Rh_(x))_(2)O_(7)single crystals was only around 3%,which is far from the MIT region.In this paper,we report the successful growth of single crystals of Sr3(Ir_(1-x)Rh_(x))_(2)O_(7)with a doping level of~9%.The samples have been fully characterized,demonstrating the high quality of the single crystals.Transport measurements have been carried out,confirming the tendency of MIT in these samples.The electronic structure has also been examined by angle-resolved photoemission spectroscopy(ARPES)measurements.Our results establish a platform to investigate the heavily hole doped Sr_(3)Ir_(2)O_(7) compound,which also provide new insights into the MIT with hole doping in this material system.

Enormous enhancement in electrical performance of few-layered MoTe2 due to Schottky barrier reduction induced by ultraviolet ozone treatment

Doping can improve the band alignment at the metal-semiconductor interface to modify the corresponding Schottky barrier,which is crucial for the realization of high-performance logic components.Here,we systematically investigated a convenient and effective method,ultraviolet ozone treatment,for p-type doping of MoTe2 field-effect transistors to enormously enhance the corresponding electrical performance.The resulted hole concentration and mobility are near 100 times enhanced to be〜1.0×10^13 cm^-2 and 101.4 cm^2/(V·s),respectively,and the conductivity is improved by 5 orders of magnitude.These values are comparable to the highest ones ever obtained via annealing doping or non-lithographic fabrication methods at room temperature.Compared with the pristine one,the photoresponsivity(522 mA/W)is enhanced approximately 100 times.Such excellent performances can be attributed to the sharply reduced Schottky barrier because of the surface charge transfer from MoTe2 to MoOx(x<3),as proved by photoemission spectroscopy.Additionally,the p-doped devices exhibit excellent stability in ambient air.Our findings show significant potential in future nanoelectronic and optoelectronic applications.

The melilite-type compound (Sr_(1-x),A_x)_2MnGe_2S_6O(A=K,La) being a room temperature ferromagnetic semiconductor

The seeking of room temperature ferromagnetic semiconductors, which take advantages of both the charge and spin degrees of freedom of electrons to realize a variety of functionalities in devices integrated with electronic, optical, and magnetic storage properties, has been a long-term goal of scientists and engi- neers. Here, by using the spin-polarized density functional theory calculations, we predict a new series of high temperature ferromagnetic semiconductors based on the melilite-type oxysulfide Sr2MnGe2S60 through hole （K） and electron （La） doping. Due to the lack of strong antiferromagnetic superexchange between Mn ions, the weak antiferromagnetic order in the parent compound Sr2MnGe2S60 can be sup- pressed easily by charge doping with either p-type magnetic order. At a doping concentration of or n-type carriers, giving rise to the expected ferro- 25%, both the hole-doped and electron-doped compounds can achieve a Curie temperature （To） above 300 K. The underlying mechanism is analyzed. Our study provides an effective approach for exploring new types of high temperature ferromagnetic semiconductors.