Gradual variation method for thick GaN heteroepitaxy by hydride vapour phase epitaxy

Two strain-state samples of GaN, labelled the strain-relief sample and the quality-improved sample, were grown by hydride vapour phase epitaxy （HVPE）, and then characterized by high-resolution X-ray diffraction, photoluminescence and optical microscopy. Two strain states of GaN in HVPE, like 3D and 2[） growth modes in metal-organic chemical vapour deposition （MOCVD）, provide an effective way to solve the heteroepitaxial problems of both strain relief and quality improvement. The gradual variation metbod （GVM）, developed based on the two strain states, is characterized by growth parameters＇ gradual variation alternating between the strain-relief growth conditions and the quality-improved growth conditions. In GVM, the introduction of the strain-relief amplitude, which is defined by the range from the quality-improved growth conditions to the strain-relief growth conditions, makes the strain-relief control concise and effective. The 300-μm thick bright and crack-free GaN film grown on a two-inch sapphire proves the effectiveness of GVM.

Effect of Substrate Nitridation on Properties of Thick GaN Film Grown by Hydride Vapour Phase Epitaxy

Thick GaN films were grown on the sapphire substrate by hydride vapour phase epitaxy. The properties of GaN films were found to be significantly influenced by the duration of exposing the sapphire substrate to ammonia prior to the GaN growth initiation. The crystalline quality of GaN films revealed by high resolution X-ray diffraction were strongly dependent on the nitridation time, which determined substrate surface topography. The different nitridation schemes strongly affected the morphology of GaN overlayers resulting in the blue shift of the main excitonic peak in photoluminescence spectra at room temperature.

Preparation of Porous GaN Buffer and Its Influence on the Residual Stress of GaN Epilayers Grown by Hydride Vapor Phase Epitaxy

The preparation of porous structure on the molecular beam epitaxy （MBE）-grown mixed-polarity GaN epilayers was reported by using the wet chemical etching method. The effect of this porous structure on the residual stress of subsequent-growth GaN epilayers was studied by Raman and photoluminescence （PL） spectrum. Substantial decrease in the biaxial stresse can be achieved by employing the porous buffers in the hydride vapour phase epitaxy （HVPE） epilayer growth.

AFM Observation of GaN Grown on Different Substrates at Low Temperatures

Aim To study the relationship between the substrate temperature and the morphology and properties of GaN. Methods\ Applying the hydride chemical vapor deposition method, GaN films were deposited on different kinds of substrates, including sapphire, Si(111),Si(100),GaAs and GaP(111) both on the P face and the Ga face. The growth was performed at low temperatures of below 700℃. XRD, Hall measurement, cathodoluminescence (CL) and atomic force microscopy (AFM) were used to characterise the film properties. Results\ It was found that the temperature and the nature of substrate materials influence the layer morphology. Conclusion\ The analysis shows that no apparent relationship exists between the optical properties and layer morphology.