A carburized layer with special physical and chemical properties was formed on the surface of commercial purity titanium by a double glow plasma hydrogen-free carburizing technique,High-purity netlike solid graphite w...A carburized layer with special physical and chemical properties was formed on the surface of commercial purity titanium by a double glow plasma hydrogen-free carburizing technique,High-purity netlike solid graphite was used as a raw material and commercial purity titanium was used as the substrate material.Argon gas was used as the working gas.The carburized layer can be obviously observed under a microscope.X-ray diffraction indicates that TiC phase with higher hardness and dissociate state carbon phase was formed in the carburized layer.The glow discharge spectrum（GDS） analysis shows that the carbon concentration distributes grodiently along the depth of carburized layer.The surface hardness of the substrate increases obviously.The hardness distributes gradiently from the surface to inner of carburized layer.The friction coefficient reduces by more than 1/2,the ratio wear rate decreases by above three orders of magnitude.The wear resistance of the substrate material is improved-consumedly.展开更多
围绕压阻传感器领域对高性能类金刚石(Diamond Like Carbon,DLC)薄膜压阻敏感材料的需求,针对金属掺杂DLC存在的载流子输运行为和实际多工况(如温度、湿度等)下压阻性能不明的问题,本工作以Ti-石墨复合拼接靶为靶材,采用高功率脉冲磁控...围绕压阻传感器领域对高性能类金刚石(Diamond Like Carbon,DLC)薄膜压阻敏感材料的需求,针对金属掺杂DLC存在的载流子输运行为和实际多工况(如温度、湿度等)下压阻性能不明的问题,本工作以Ti-石墨复合拼接靶为靶材,采用高功率脉冲磁控溅射技术,高通量制备出4种Ti含量(原子分数为0.43%~4.11%)的Ti掺杂类金刚石(Ti-DLC)薄膜,研究了Ti含量对薄膜组分结构、电学性能、变湿度环境下压阻性能的影响规律。结果表明:Ti含量(原子分数)在0.43%~4.11%范围内,掺杂Ti原子均以固溶形式均匀镶嵌于非晶碳网络中,Ti-DLC薄膜电学行为表现为典型半导体特性,在200~350 K温度范围内,薄膜电阻率均随温度升高而降低。载流子传导机制在200~270 K内为Mott型三维变程跳跃传导,在270~350 K范围内则为热激活传导。Ti-DLC薄膜压阻系数(Gauge Factor,GF)最大值为95.1,在20%~80%相对湿度范围内,所有样品GF均随湿度增加而增大,这可能是引入的固溶Ti原子缩短了导电相之间的平均距离,同时吸附表面水分子导致电阻变化。展开更多
目的研究硅(Si)、氧(O)元素掺杂对类金刚石(Diamond like Carbon,DLC)薄膜沉积、结构、表面形貌以及阻隔性能的影响,为高效制备高阻隔硅氧共掺类金刚石(Si and O Incorporated DLC,Si/O-DLC)薄膜提供新的思路参考。方法利用微波等离子...目的研究硅(Si)、氧(O)元素掺杂对类金刚石(Diamond like Carbon,DLC)薄膜沉积、结构、表面形貌以及阻隔性能的影响,为高效制备高阻隔硅氧共掺类金刚石(Si and O Incorporated DLC,Si/O-DLC)薄膜提供新的思路参考。方法利用微波等离子体化学气相沉积(Plasma Enhanced Chemical Vapor Deposition,PECVD)技术在聚对苯二甲酸乙二醇酯(Polyethylene terephthalate,PET)基底表面沉积Si/O-DLC薄膜,具体研究反应单体中六甲基二硅氧烷(Hexaethyldisiloxane,HMDSO)含量对薄膜沉积和阻隔性能的影响。通过台阶仪、傅里叶红外光谱(FTIR)、X射线光电子能谱(XPS)、原子力显微镜(AFM)表征薄膜厚度、结构和微观形貌,并通过测试氧气透过率表征复合薄膜的阻隔性能。结果随着混合气体中HMDSO含量增加,薄膜的沉积速率提高,不同高度位置上沉积速率波动变弱,平均沉积速率最高达到310 nm·min^(–1),同时,薄膜中Si、O元素含量增加,相关的键合结构含量增加,薄膜表面致密性变差,氧气阻隔性能变弱;当HMDSO流量控制在1 mL·min^(–1)时,PET薄膜的氧气透过率可从未涂覆时的132mL·m^(2)·d^(–1)降低至2mL·m^(2)·d^(-1),阻隔性能明显改善。结论在一定工艺条件下,通过微波PECVD技术在PET薄膜表面涂覆Si/O-DLC薄膜,可明显改善其阻隔性能。展开更多
文摘A carburized layer with special physical and chemical properties was formed on the surface of commercial purity titanium by a double glow plasma hydrogen-free carburizing technique,High-purity netlike solid graphite was used as a raw material and commercial purity titanium was used as the substrate material.Argon gas was used as the working gas.The carburized layer can be obviously observed under a microscope.X-ray diffraction indicates that TiC phase with higher hardness and dissociate state carbon phase was formed in the carburized layer.The glow discharge spectrum（GDS） analysis shows that the carbon concentration distributes grodiently along the depth of carburized layer.The surface hardness of the substrate increases obviously.The hardness distributes gradiently from the surface to inner of carburized layer.The friction coefficient reduces by more than 1/2,the ratio wear rate decreases by above three orders of magnitude.The wear resistance of the substrate material is improved-consumedly.
文摘目的研究硅(Si)、氧(O)元素掺杂对类金刚石(Diamond like Carbon,DLC)薄膜沉积、结构、表面形貌以及阻隔性能的影响,为高效制备高阻隔硅氧共掺类金刚石(Si and O Incorporated DLC,Si/O-DLC)薄膜提供新的思路参考。方法利用微波等离子体化学气相沉积(Plasma Enhanced Chemical Vapor Deposition,PECVD)技术在聚对苯二甲酸乙二醇酯(Polyethylene terephthalate,PET)基底表面沉积Si/O-DLC薄膜,具体研究反应单体中六甲基二硅氧烷(Hexaethyldisiloxane,HMDSO)含量对薄膜沉积和阻隔性能的影响。通过台阶仪、傅里叶红外光谱(FTIR)、X射线光电子能谱(XPS)、原子力显微镜(AFM)表征薄膜厚度、结构和微观形貌,并通过测试氧气透过率表征复合薄膜的阻隔性能。结果随着混合气体中HMDSO含量增加,薄膜的沉积速率提高,不同高度位置上沉积速率波动变弱,平均沉积速率最高达到310 nm·min^(–1),同时,薄膜中Si、O元素含量增加,相关的键合结构含量增加,薄膜表面致密性变差,氧气阻隔性能变弱;当HMDSO流量控制在1 mL·min^(–1)时,PET薄膜的氧气透过率可从未涂覆时的132mL·m^(2)·d^(–1)降低至2mL·m^(2)·d^(-1),阻隔性能明显改善。结论在一定工艺条件下,通过微波PECVD技术在PET薄膜表面涂覆Si/O-DLC薄膜,可明显改善其阻隔性能。
