With the advent ofinternet of things （lOT）, the need for studying new material and devices for various applications is increasing. Traditionally we build compact models for transistors on the basis of physics. But p...With the advent ofinternet of things （lOT）, the need for studying new material and devices for various applications is increasing. Traditionally we build compact models for transistors on the basis of physics. But physi- cal models are expensive and need a very long time to adjust for non-ideal effects. As the vision for the application of many novel devices is not certain or the manufacture process is not mature, deriving generalized accurate physi- cal models for such devices is very strenuous, whereas statistical modeling is becoming a potential method because of its data oriented property and fast implementation. In this paper, one classical statistical regression method, LASSO, is used to model the I-V characteristics of CNT-FET and a pseudo-PMOS inverter simulation based on the trained model is implemented in Cadence. The normalized relative mean square prediction error of the trained model versus experiment sample data and the simulation results show that the model is acceptable for digital circuit static simulation. And such modeling methodology can extend to general devices.展开更多
It is adopted the single-diode solar cell model and extended for a PV module. The current vs. voltage (I-V) characteristic based on the Lambert W-function was used. The estimation parameters for the simulation approac...It is adopted the single-diode solar cell model and extended for a PV module. The current vs. voltage (I-V) characteristic based on the Lambert W-function was used. The estimation parameters for the simulation approach of the photovoltaic (PV) module make use of Levenberg-Marquardt method. It was considered an industrial polycrystalline silicon photovoltaic (PV) module and the simulated results were compared with the experimental ones extracted from a specific datasheet. The I-V characteristic for the analysed PV module and its maximum output power are investigated for different operating conditions of incident solar radiation flux and temperature, as well as parameters related to the solar cells material and technology (series resistance, shunt resistance and gamma factor). The analysis gives indications and limitations for design and optimization of the performance for industrial PV modules. This study can be implemented in any type of PV module.展开更多
文摘With the advent ofinternet of things （lOT）, the need for studying new material and devices for various applications is increasing. Traditionally we build compact models for transistors on the basis of physics. But physi- cal models are expensive and need a very long time to adjust for non-ideal effects. As the vision for the application of many novel devices is not certain or the manufacture process is not mature, deriving generalized accurate physi- cal models for such devices is very strenuous, whereas statistical modeling is becoming a potential method because of its data oriented property and fast implementation. In this paper, one classical statistical regression method, LASSO, is used to model the I-V characteristics of CNT-FET and a pseudo-PMOS inverter simulation based on the trained model is implemented in Cadence. The normalized relative mean square prediction error of the trained model versus experiment sample data and the simulation results show that the model is acceptable for digital circuit static simulation. And such modeling methodology can extend to general devices.
基金This research was conducted under the research project“High-performance tandem heterojunction solar cells for specific applications(SOLHET)”,funded by the Research Council of Norway(RCN),project no.251789 the Romanian Executive Agency for Higher Education,Research,Development and Innovation Funding(UEFISCDI),project no.34/2016 and 35/2016,through the M-Era.net program.
文摘It is adopted the single-diode solar cell model and extended for a PV module. The current vs. voltage (I-V) characteristic based on the Lambert W-function was used. The estimation parameters for the simulation approach of the photovoltaic (PV) module make use of Levenberg-Marquardt method. It was considered an industrial polycrystalline silicon photovoltaic (PV) module and the simulated results were compared with the experimental ones extracted from a specific datasheet. The I-V characteristic for the analysed PV module and its maximum output power are investigated for different operating conditions of incident solar radiation flux and temperature, as well as parameters related to the solar cells material and technology (series resistance, shunt resistance and gamma factor). The analysis gives indications and limitations for design and optimization of the performance for industrial PV modules. This study can be implemented in any type of PV module.
