Anomalous CDW ground state in Cu_(2)Se:A wave-like fluctuation of the dc I-v curve near 50 K

A charge density wave(CDW)ground state is observed in polycrystalline Cu_(2)Se below 125 K,which corresponds to an energy gap of 40.9 meV and an electron-phonon coupling constant of 0.6.Due to the polycrystalline structure,the Peierls transition process has been expanded to a wide temperature range from 90 K to 160 K.The Hall carrier concentration shows a continuous decrease from 2.1×10^(20)to 1.6×10^(20)cm^(-3)in the temperature range from 160 K to 90 K,while almost unchanged above 160 K and below 90 K.After entering the CDW ground state,a wave-like fluctuation was observed in theI-Vcurve near 50 K,which exhibits a periodic negative differential resistivity in an applied electric field due to the current.We also investigated the doping effect of Zn,Ni,and Te on the CDWground state.Both Zn and Ni doped Cu_(2)Se show a CDW character with increased energy gap and electron-phonon coupling constant,but no notable Peierls transition was observed in Te doped Cu_(2)Se.Similar wave-likeI-Vcurve was also seen in Cu_(1.98)Zn_(0.02)Se near 40 K.The regular fluctuation in the dcI-Vcurve was not magnetic field sensitive,but temperature and sample size sensitive.

Current-voltage characteristics of individual conducting polymer nanotubes and nanowires

We report the current-voltage （I-V） characteristics of individual polypyrrole nanotubes and poly（3,4- ethylenedioxythiophene） （PEDOT） nanowires in a temperature range from 300 K to 2 K. Considering the complex structures of such quasi-one-dimensional systems with an array of ordered conductive regions separated by disordered barriers, we use the extended fluctuation-induced tunneling （FIT） and thermal excitation model （Kaiser expression） to fit the temperature and electric-field dependent I-V curves. It is found that the I-V data measured at higher temperatures or higher voltages can be well fitted by the Kaiser expression. However, the low-temperature data around the zero bias clearly deviate from those obtained from this model. The deviation （or zero-bias conductance suppression） could be possibly ascribed to the occurrence of the Coulomb-gap in the density of states near the Femi level and/or the enhancement of electron-electron interaction resulting from nanosize effects, which have been revealed in the previous studies on low-temperature electronic transport in conducting polymer films, pellets and nanostructures. In addition, similar I--V characteristics and deviation are also observed in an isolated K0.27MnO2 nanowire.

Pressure effect study on the Ⅰ-Ⅴ property of the GaAs-based resonant tunnelling structure by photoluminescence measurement

This paper discusses the I-V property of the GaAs-based resonant tunnelling structure （RTS） under external uniaxial pressure by photoluminescence studies. Compressive pressure parallel to the [110] direction, whose value is determined by Hooke＇s law, is imposed on the sample by a helix micrometer. With the increase of the applied external uniaxial compressive pressure, the blue shift and splitting of the luminescence peaks were observed, which have some influence on the I-V curve of RTS from the point of view of the energy gap, and the splitting became more apparent with applied pressure. Full width at half maximum broadening could also be observed.

A Robust MPPT Control Based on Double Ended Forward Converter Architecture

In this paper,a stand-alone photovoltaic(PV)system based on a Double Ended Forward Converter(DEFC)is presented.The proposed converter is specified for 48 V,100Wapplications as most of the equipment used in telecommunication and aircraft fall in this range.The literature has limited potential application of DEFCin PV systems.The research work deals with an in-depth study of DEFCand proposes an improvedDEFCfor PV applications with battery backup.Besides,a bi-directional dc-dc converter for the battery is integrated to track theMaximumPower Point(MPP)of the PV generator.The converter is examined under variable irradiance and load conditions,and the analytical analysis of boundary conditions are implemented.The converter’s architecture also ensures built-in I-V curve tracing for the identification of MPP of PV generator.It offers low voltage stresses across switches and avoids sinking power supply and core resetting circuits.The topology’s behavior is analyzed based onMPP achievement and maintaining output under different conditions of battery backup availability,environmental,and load conditions.The PV system architecture is designed and analyzed theoretically and verified with simulations on the PSIM software.

The Langmuir Probe onboard CSES: data inversion analysis method and first results

The Langmuir Probe(LAP), onboard the China Seismo-Electromagnetic Satellite(CSES), has been designed for in situ measurements of bulk parameters of the ionosphere plasma, the first Chinese application of in-situ measurement technology in the field of space exploration. The two main parameters measured by LAP are electron density and temperature. In this paper, a brief description of the LAP and its work mode are provided. Based on characteristics of the LAP, and assuming an ideal plasma environment, we introduce in detail a method used to invert the I-V curve; the data products that can be accessed by users are shown. Based on the LAP data available, this paper reports that events such as earthquakes and magnetic storms are preceded and followed by obvious abnormal changes. We suggest that LAP could provide a valuable data set for studies of space weather, seismic events, and the ionospheric environment.