Optimization of ITO/V_(2)O_(5)/Alq3/TPBi/BPhen/LiF/Al Layers Configuration for OLED and Study of Its Optical and Electrical Characteristics

Nowadays,OLEDs have shown aesthetic potential in smart cards,sensor displays,other electronic devices,sensitive medical devices and signal monitoring etc.due to their wide range of applications like low power consumption,high contrast ratio,speed highly electroluminescent,wide viewing angle and fast response time.In this paper,a highly efficient organic LED ITO/V_(2)O_(5)/Alq3/TPBi/BPhen/LiF/Al with low turn-on voltage and high optically efficiency is presented including electrical and optical characteristics.The simulation of electrical characteristics like current versus applied voltage,current density versus applied voltage,recombination prefactor versus excess carrier density characteristics and optical characteristics like light flux versus current density,light flux versus applied voltage and optical efficiency versus applied voltage has been explained.The physical design,working principle and thickness of different layers along with the process of formation of singlet and triplet excitons are discussed in detail.Here double electron transport layer(ETL),cathode layers are used to enhance the electrical and optical efficiency of OLED.The operating voltage is found to be~3.2 V for the ITO/V_(2)O_(5)/Alq3/TPBi/BPhen/LiF/Al heterostructure based OLED.The designed organic LED has achieved the maximum optical efficiency at 3 V.

Effect of High Temperature Annealing on Characteristics of 4H Silicon Carbide MESFET

For very high temperature annealing (1620℃) after ion implantation for 4H silicon carbide (4H SiC),the residual components of Al and O in the alundum furnace impact seriously on the surface of material,which yields the derivation of SiOC.This causes a significant degradation of the 4H SiC surface characteristics according to the results of surface composition analysis.As validity,Ni/SiC ohmic contact measurement illustrates a higher specific contact resistance than the normal value by a factor of 2～3.Consequently the MESFET fabricated with this kind of 4H SiC material results in a degraded I V output performance compared with that of normal 4H SiC MESFET.

The Convergence Characteristic of the Forward I-V Characteristic Curves of a Semiconductor Silicon Barrier at Different Temperatures

The /-V-（T） characteristic curves of p-n junctions with the forward voltage as the independent variable, the logarithm of forward current as the dependent variable, and the junction temperature as the parameter, almost converge at one point in the first quadrant. The voltage corresponding with the convergence point nearly equals the bandgap of the semiconductor material. This convergence point can be used to obtain the I-V characteristic curve at any temperature.

Nonlinear Current-Voltage Characteristics and Electroluminescence of cBN Crystal

The current-voltage（I-V） characteristics of cBN crystal sandwiched between two metallic electrodes are measured and found to be nonlinear. Over 20 samples are measured at room temperature with various electrodes, and the resulting curves are all similar in shape. When a voltage of about 560V is applied to the cBN crystal, the emitted light is visible to the naked eye in a dark room. We explain these phenomena by the space charge limited current and the electronic transition between the X and Г valleys of the conduction band.

Dark output characteristic of γ-ray irradiated CMOS digital image sensors

The quality of dark output images from the CMOS (complementarymetal oxide semiconductor) black and white (B & W) digital imagesensors captured before and after γ-ray irradiation was studied. Thecharacteristic parameters of the dark output images captured atdifferent radiation dose, e.g. average brightness and itsnon-uniformity of dark out- put images, were analyzed by our testsoftware. The primary explanation for the change of the parameterswith the radi- ation dose was given.

The influences of model parameters on the characteristics of memristors

As the fourth passive circuit component, a memristor is a nonlinear resistor that can ＂remember＂ the amount of charge passing through it. The characteristic of ＂remembering＂ the charge and non-volatility makes memristors great potential candidates in many fields. Nowadays, only a few groups have the ability to fabricate memristors, and most researchers study them by theoretic analysis and simulation. In this paper, we first analyse the theoretical base and characteristics of memristors, then use a simulation program with integrated circuit emphasis as our tool to simulate the theoretical model of memristors and change the parameters in the model to see the influence of each parameter on the characteristics. Our work supplies researchers engaged in memristor-based circuits with advice on how to choose the proper parameters.

Current–voltage characteristics of hydrogen DC plasma torches with different sizes in an external axial magnetic field

Current-voltage （l-V） characteristics of hydrogen DC plasma torches with different sizes in an external axial magnetic field under atmospheric pressure are reported. Three anodes with different diameters are adopted in a 50-kW torch： 25 mm, 30 mm, and 35 nun, respectively. Two different diameters of anodes, that is, 100 mm and 130 mm, are adopted in a 1-MW plasma torch. The arc voltage shows a negative trend with the increase of arc current under the operating regimes. On the contrary, arc voltage shows a positive trend as the flow rate of carder gas increases, and a similar trend is found with increasing the external magnetic flux density. A similarity formula is constructed to correlate the experimental data of the torches mentioned above. Linear fitting shows that the Pearson correlation coefficient is 0.9958.

Analysis of Electrical Characteristics of Photovoltaic Single Crystal Silicon Solar Cells at Outdoor Measurements

The electrical performance of a photovoltaic (PV) silicon solar cell is described by its current–voltage (I–V) character-istic curve, which is in turn determined by device and material properties. In this study, an investigation of the performance and device parameters of photovoltaic single crystalline silicon (Si.) solar cell of the construction n+pp++ PESC(Passivatted Emitter Solar Cell) at different conditions of solar irradiance, title angle and mirror boosting effects had been studied. Also the paper reports on the performance data of the Si. cell, using standard I–V characteristic curves to obtain output parameters and to show that there are possible performance degrading defects presents.

Structure design and characteristics analysis of a cylindrical giant magnetostrictive actuator for ball screw preload

In order to achieve automatic adjustment of the double-nut ball screw preload, a magnetostrictive ball screw preload system is proposed. A new cylindrical giant magnetostrictive actuator （CGMA）, which is the core component of the preload system, is developed using giant magnetostrictive material （GMM） with a hole. The pretightening force of the CGMA is determined by testing. And the magnetic circuit analysis method is introduced to calculate magnetic field intensity of the actuator with a ball screw shaft. To suppress the thermal effects on the magnetostrictive outputs, an oil cooling method which can directly cool the heat source is adopted. A CGMA test platform is established and the static and dynamic output characteristics are respectively studied. The experimental results indicate that the CGMA has good linearity and no double-frequency effect under the bias magnetic field and the output accuracy of the CGMA is significantly improved with cooling measures. Although the output decreased with screw shaft through the actuator, the performance of CGMA meets the design requirements for ball screw preload with output displacement more than 26 μm and force up to 6200 N. The development of a CGMA will provide a new approach for automatic adjustment of double-nut ball screw preload.

Difference in electron-and gamma-irradiation effects on output characteristic of color CMOS digital image sensors

Changes of the average brightness and non-uniformity of dark output images,and quality of pictures captured under natural lighting for the color CMOS digital image sensorsirradiated at different electron doses have been studied in comparison to those from theγ-irradiated sensors. For the electron-irradiated sensors, the non-uniformity increases obviouslyand a small bright region on the dark image appears at the dose of 0.4 kGy. The average brightnessincreases at 0.4 kGy, increases sharply at 0.5 kGy. The picture is very blurry only at 0.6 kGy,showing the sensor undergoes severe performance degradation. Electron radiation damage is much moresevere than γ radiation damage for the CMOS image sensors. A possible explanation is presented inthis paper.

Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs

We investigate the influence of fin architecture on linearity characteristics of AlGaN/GaNFinFET.It is found that the Fin FET with scaled fin dimensions exhibits much flatter Gm characteristics than the one with long fins as well as planar HEMT.According to the comparative study,we provide direct proof that source resistance rather than tri-gate structure itself dominates the Gm behavior.Furthermore,power measurements show that the optimized FinFET is capable of delivering a much higher output power density along with significant improvement in linearity characteristics than conventional planar HEMT.This study also highlights the importance of fin design in GaN-based FinFET for microwave power application,especially high-linearity applications.

Characteristics and Thermal Efficiency of a Non-transferred DC Plasma Spraying Torch Under Low Pressure

Current-voltage （I-V） characteristics of a non-transferred DC arc plasma spray torch operated in argon at vacuum are reported. The arc voltage is of negative characteristics for a current below 200 A, fiat for a current between 200 A to 250 A and positive for a current beyond 250 A. The voltage increases slowly with the increase in carrier gas of arc. The rate of change in voltage with currents is about 3-4 V/100 A at a gas flow rate of about 1-1.5 V/10 standard liter per minute （slpm）. The I-V characteristics of the DC plasma torch are of a shape of hyperbola. Arc power increases with the argon flow rate. and the thermal efficiency of the torch acts in a similar way. The thermal efficiency of the non-transferred DC plasmatron is about 65-78%.

F4-TCNQ concentration dependence of the current voltage characteristics in the Au/P3HT:PCBM:F4-TCNQ/n-Si(MPS) Schottky barrier diode

In this study, we investigate some main electrical parameters of the gold/poly（3-hexylthiophene）：[6,6]-phenyl C61 bu- tyric acid methyl ester：2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon （Au/P3HT：PCBM：F4-TCNQ/n- Si） metal-polymer-semiconductor （MPS） Schottky barrier diode （SBD） in terms of the effects of F4-TCNQ concentration （0%, 1%, and 2%）. F4-TCNQ-doped P3HT：PCBM is fabricated to figure out the p-type doping effect on the device per- formance. The main electrical parameters, such as ideality factor （n）, barrier height （ФB0）, series resistance （Rs）, shunt resistance （Rsh）, and density of interface states （Nss） are determined from the forward and reverse bias current-voltage （l-V） characteristics in the dark and at room temperature. The values of n, Rs, ФB0, and Nss are significantly reduced by using the 1% F4-TCNQ doping in P3HT：PCBM：F4-TCNQ organic blend layer, additionally, the carrier mobility and current are increased by the soft （1%） doping. The most ideal values of electrical parameters are obtained for 1% F4-TCNQ used diode. On the other hand, the carrier mobility and current for the hard doping （2%） become far away from the ideal diode values due to the unbalanced generation of holes/electrons and doping-induced disproportion when compared with 1% F4-TCNQ doping. These results show that the electrical properties of MPS SBDs strongly depend on the F4-TCNQ doping and doping concentration of interfacial P3HT：PCBM：F4-TCNQ organic layer. Moreover, the soft F4-TCNQ dop- ing concentration （1%） in P3HT：PCBM：F4-TCNQ organic layer significantly improves the electrical characteristics of the Au/P3HT：PCBM：F4-TCNQ/n-Si （MPS） SBDs which enables the fabricating of high-quality electronic and optoelectronic devices.

Effect of Temperature on I-V Characteristic for ZnO/CuO

Research on nonmaterials has become increasingly popular because of their unique physical, chemical, optical and catalytic properties compared to their bulk counterparts. Therefore, many efforts have been made to synthesize multidimensional nanostructures for new and efficient nanodevices. Among those materials, zinc oxide (ZnO) has gained substantial attention owing to many outstanding properties. ZnO besides its wide band gap of 3.34 eV exhibits a relatively large excitons binding energy (60 meV) at room temperature which is attractive for optoelectronic applications. Likewise, cupric oxide (CuO) has a narrow band gap of 1.2 eV and a variety of chemo-physical properties that are attractive in many fields. Moreover, composite nanostructures of these two oxides (CuO/ZnO) may pave the way for various new applications. So in this thesis, eight samples of CuO/ZnO junction were synthesized and exposed to temperatures 60, 70, 80, 90, 100, 110, 120 and 130. The electrical properties of Schottky diode junctions were analyzed by I-V measurements under the influence of direct solar radiation and, lag of radiation (darkness) which shows the semi-logarithmic I-V characteristic curve of the fabricated photodiodes. Also energy band gap was estimated and the morphology and particle sizes of the as-prepared sample were determined by SEM. The SEM images of ZnO + CuO sample films were annealed at 60°C to 130°C step 10.

基于数据驱动的分布式光伏发电功率预测方法研究进展

从综述的角度,以分布式光伏系统为对象,分析了功率预测技术的发展情况、存在的难点以及主要影响因素,梳理了应用数据驱动方法实现功率准确预测的技术路线。再以空间相关性、历史出力功率以及气象等影响因素为切入点,梳理了光伏系统数据驱动的功率预测研究现状,分析其相应的数据增强、时空图信息以及特征融合的手段,讨论了技术的优缺点。最后给出了功率预测数据驱动方法研究方向和发展建议。

基于皮肤-脂肪模型的太赫兹体内多输入多输出信道特性分析与建模

为探究太赫兹(THz)频段体内多输入多输出(MIMO)通信系统的传输特性,该文在0.8~1.2 THz下构建了精确的皮肤-脂肪模型,对皮肤-脂肪模型中垂直方向和水平方向的链路进行全波电磁仿真,分析太赫兹体内信道特性,建立路径损耗模型。首先,结合太赫兹频段人体组织的介电特性和人体皮肤的解剖学结构构建皮肤-脂肪模型。其次,对比分析了3条链路的路径损耗和阴影衰落,提出带有等效吸收因子的太赫兹体内路径损耗模型。最后,对3条链路的莱斯K因子、均方根时延扩展、MIMO容量进行分析。仿真分析表明,带有等效吸收因子的太赫兹体内路径损耗模型可以更准确地描述加长距离垂直链路2的路径损耗,发射端在体表可以增强MIMO容量。该文的工作可以为太赫兹体内通信系统的设计和优化提供参考。

热声制冷机中磁致伸缩换能器设计及特性分析

本文针对传统驱动方式热声制冷机效率低的问题,提出一种用磁致伸缩换能器驱动热声制冷机的设计方案。磁致伸缩换能器作为热声制冷机的驱动器,其输出特性对热声制冷机制冷效果至关重要。基于此对磁致伸缩换能器开展了从超磁致伸缩材料几何参数、激励线圈最佳电磁转换效率和内部磁路3个方面的优化设计研究,最后对换能器输出特性进行了仿真分析。结果表明:在4.6 kHz时位移最大,输出位移达到63μm,满足驱动热声制冷机需求。

水风光储一体化系统中储能平抑出力波动效果评价研究

随着新型电力系统的发展,风能、光能等高比例新能源的联网运行是实现其大规模开发利用重要途径,也是在双碳政策背景下节能减排的重要方式。由于风电和光伏出力具有极强的随机性与不可控性,高比例的风电与光伏接入电网势必会产生巨大的波动,从而降低电能质量,给电网运行带来许多不便。如何既能高比例地消纳风电与光伏,又能尽量减少其并网产生的不利影响成为一项重要课题。本文建立了风电、光伏及水电的出力模型,分析了不同情景下的出力特点与趋势,根据其出力的强不确定性、间歇性与周期性的特点,计算不同组合方式下的组合能源系统出力数据并对比分析。以某水电站为例,建立以水电调节为主的水风光发电系统,并在其中加入超短期储能装置,研究发现此组合能源出力系统可以很好地平抑出力波动并达到出力最高,且经济效益良好。

基于改进K-means聚类的轨道交通基础设施分布式光伏发电典型场景生成及出力特性分析

受限于自然条件,光伏出力具有很强的随机性。为准确评估轨道交通基础设施分布式光伏发电的光伏出力特性,提出一种基于改进K-means聚类算法的轨道交通基础设施分布式光伏发电典型场景生成方法,并基于此进行光伏出力特性分析。首先,基于分布式光伏发电设施以及气象数据,利用PVsyst软件模拟光伏发电出力数据。然后,针对基本K-means聚类算法聚类参数和初始聚类中心盲目性高的问题,结合聚类有效性指标(Density based index,DBI)和层次聚类对其进行改进并利用改进K-means聚类算法生成光伏典型日出力场景。最后,基于华中地区某地轨道交通基础设施分布式光伏系统对所提方法的有效性和优越性进行验证,并通过定性和定量分析各典型场景的出力特性揭示轨道交通基础设施分布式光伏出力的规律和特点。

积灰对光伏组件性能影响的试验研究及数值模拟

探究光伏组件表面积灰对其输出特性的影响及污秽颗粒在组件表面的沉积规律,有助于制定清灰方案,提高光电转化效率。以置于华北电力大学风机大厅楼顶的光伏阵列为研究对象,进行人工布灰试验,探究了不同积灰量对组件输出功率、电流和电压的影响;为探究某单一因素对污秽颗粒沉积的影响,利用COMSOL软件建立与光伏组件自然积灰试验条件相同的颗粒沉积数值模型,模拟分析了风速、湿度、颗粒粒径和污秽浓度对光伏组件表面污秽颗粒沉积的影响。试验结果表明:积灰对工作电压影响较小,对输出功率和工作电流影响较大,且当积灰密度为5.07 g/m^(2)时,组件输出功率、电流和电压的变化率分别为8.71%、6.48%和0.40%。模拟结果表明:其他条件相同时,颗粒的沉积量随风速和粒径的增大均先减小后增大,在风速3 m/s和粒径15μm时取得最小值;相同条件下,颗粒沉积量均随湿度和污秽的浓度的增大而增大。