In the present paper, some novel opportunities for the development of high-efficient Si and III-V-based solar cells are considered: energy-saving environment friendly low-temperature technology of forming p-n junction...In the present paper, some novel opportunities for the development of high-efficient Si and III-V-based solar cells are considered: energy-saving environment friendly low-temperature technology of forming p-n junctions in Si (1), elaboration of structurally perfect GaAs/Ge/Si epitaxial substrates (2) and application of protective antireflecting coatings based on cubic zirconia (3). As a result: 1) New technique of forming p-n junctions in silicon has been elaborated. The technique provided easy and comparatively cheap process of production of semiconductor devices such as solar cells. The essence of the technique under the study is comprised in formation p-n junctions in silicon by a change of conductivity in the bulk of the sample occurring as a result of redistribution of the impurities, which already exists in the sample before its processing by ions. It differs from the techniques of diffusion and ion doping where change of conductivity and formation of p-n junction in the sample occur as a result of introduction of atoms of the other dopants from the outside;2) The conditions for synthesis of GaAs/Ge/Si epitaxial substrates with a thin (200 nm) Ge buffer layer featured with (1 - 2) × 105 cm-2 density of the threading dislocation in the GaAs layer. Ge buffer was obtained by chemical vapor deposition with a hot wire and GaAs layer of 1 μm thick was grown by the metal organic chemical vapor deposition. Root mean square surface roughness of GaAs layers of the less than 1 nm and good photoluminescence properties along with their high uniformity were obtained;3) The conditions ensuring the synthesis of uniform functional (buffer, insulating and protective) fianite layers on Si and GaAs substrates by means of magnetron and electron-beam sputtering have been determined. Fianite films have been shown to be suitable for the use as an ideal anti-reflecting material with high protective and anticorrosive properties.展开更多
The effect of doping concentrations and a transverse external magnetostatic field on operational characteristics of parametric amplification of backward Stokes signal has been studied, using hydrodynamic model of semi...The effect of doping concentrations and a transverse external magnetostatic field on operational characteristics of parametric amplification of backward Stokes signal has been studied, using hydrodynamic model of semiconductors, in the far infrared regime. The model suggests three achievable resonance conditions: (i) lattice frequency and plasma frequency (ii) stokes frequency and electron-cyclotron frequency (iii) stokes frequency and hybrid (plasma and electron-cyclotron) frequency and these conditions have been utilised, on one hand, to substantially reduce the value of threshold intensity for onset of the parametric amplification and on the other hand, for switching of parametric large positive and negative gain coefficient (i.e. amplification and absorption). For example a strong transverse magnetostatic field 10.0 T with free carrier concentration 1.5 x 1019m-3 enhances the gain by a factor of 103 as in its absence. Results also suggest that a weakly piezoelectric III–V semiconductor duly illuminated by slightly off-resonant not-too-high-power pulsed lasers with pulse duration sufficiently larger than the acoustic phonon lifetime is one of promising hosts for parametric amplifier/frequency converter.展开更多
III-V semiconductors such as GaAs are widely studied as promising candidates for high-speed integrated circuit.Despite these applications for conventional bulk structures,their fundamental physical properties in the n...III-V semiconductors such as GaAs are widely studied as promising candidates for high-speed integrated circuit.Despite these applications for conventional bulk structures,their fundamental physical properties in the nanoscale limit are still in scarcity,which is of great importance for the development of nanoelectronics.In this work,we demonstrate that the III-V semiconductor MX(M=Al,Ga,In;X=P,As,Sb)in its two-dimensional(2D)limit could exhibit double layer honeycomb(DLHC)configuration and distorted tetrahedral coordination,according to our first-principles calculations with HSE06 hybrid functional.It is found that surface reconstruction endows 2D III-V DLHCs with pronouncedly different electronic and magnetic properties from their bulk counterparts due to strong interlayer coupling.Mexican-hat-shape bands emerge at the top valence bands of pristine AlP,GaP,InP,AlAs,and InAs DLHCs,inducing the density of states showing a sharp van Hove singularity near the Fermi level.As a result,these DLHCs exhibit itinerant magnetism upon moderate hole doping,while the rest GaAs,AlSb,GaSb,and InSb DLHCs become magnetic under tensile strain with hole doping.With an exchange splitting of the localized pz states at the top valence bands,the hole-doped III-V DLHCs become half-metals with 100%spin-polarization.Remarkably,the InSb DLHC shows inverted band structure near the Fermi level,bringing about nontrivial topological band structures in stacked InSb DLHC due to the strong spin-orbital coupling.These III-V DLHCs expand the members of 2D material family and their exotic magnetic and topological properties may offer great potential for applications in the novel electronic and spintronic devices.展开更多
Nonlinear frequency conversion is one of the most fundamental processes in nonlinear optics.It has a wide range of applications in our daily lives,including novel light sources,sensing,and information processing.It is...Nonlinear frequency conversion is one of the most fundamental processes in nonlinear optics.It has a wide range of applications in our daily lives,including novel light sources,sensing,and information processing.It is usually assumed that nonlinear frequency conversion requires large crystals that gradually accumulate a strong effect.However,the large size of nonlinear crystals is not compatible with the miniaturisation of modern photonic and optoelectronic systems.Therefore,shrinking the nonlinear structures down to the nanoscale,while keeping favourable conversion efficiencies,is of great importance for future photonics applications.In the last decade,researchers have studied the strategies for enhancing the nonlinear efficiencies at the nanoscale,e.g.by employing different nonlinear materials,resonant couplings and hybridization techniques.In this paper,we provide a compact review of the nanomaterials-based efforts,ranging from metal to dielectric and semiconductor nanostructures,including their relevant nanofabrication techniques.展开更多
A first-principles plane wave method with the ultrasoft pseudopotential scheme in the frame of the density functional theory （DFT） is performed to calculate the lattice parameters a and c, the bulk modulus B0 and it...A first-principles plane wave method with the ultrasoft pseudopotential scheme in the frame of the density functional theory （DFT） is performed to calculate the lattice parameters a and c, the bulk modulus B0 and its pressure derivative B0 of the zinc-blende GaAs （ZB-GaAs）, rocksalt GaAs （RS-GaAs）, CsCl-GaAs, NiAs- GaAs and wurtzite GaAs （WZ-GaAs）. Our results are consistent with the available experimental data and other theoretical results. We also calculate the phase transition pressures among these different phases. The results are satisfactory.展开更多
In order to predict the actual quantity of non-bulk GaAs layers after long-time homoepitaxy on GaAs （001） by theo- retical calculation, a half-terrace diffusion model based on thermodynamics is used to calculate the...In order to predict the actual quantity of non-bulk GaAs layers after long-time homoepitaxy on GaAs （001） by theo- retical calculation, a half-terrace diffusion model based on thermodynamics is used to calculate the ripening time of GaAs layers to form a fiat morphology in annealing. To verify the accuracy of the calculation, real space scanning tunneling microscopy images of GaAs surface after different annealing times are obtained and the roughness of the GaAs surface is measured. The results suggest that the half terrace model is an accurate method with a relative error of about 4.1%.展开更多
In view of the important application of GaAs and GaN photocathodes in electron sources, differences in photoe- mission behaviour, namely the activation process and quantum yield decay, between the two typical types of...In view of the important application of GaAs and GaN photocathodes in electron sources, differences in photoe- mission behaviour, namely the activation process and quantum yield decay, between the two typical types of III-V compound photocathodes have been investigated using a multi-information measurement system. The activation exper- iment shows that a surface negative electron affinity state for the GaAs photocathode can be achieved by the necessary Cs-O two-step activation and by Cs activation alone for the GaN photocathode. In addition, a quantum yield decay experiment shows that the GaN photocathode exhibits better stability and a longer lifetime in a demountable vacuum system than the GaAs photocathode. The results mean that GaN photocathodes are more promising candidates for electron source emitter use in comparison with GaAs photocathodes.展开更多
In situ resistivity measurement has been performed to investigate the electron transport property of powered CdTe under high pressure and moderate temperature in a designed diamond anvil cell. Several abnormal resisti...In situ resistivity measurement has been performed to investigate the electron transport property of powered CdTe under high pressure and moderate temperature in a designed diamond anvil cell. Several abnormal resistivity changes can be found at room temperature when the pressure increases from ambient to 33 GPa. The abnormal resistivity changes at about 3.8 GPa and 10 GPa are caused by the structural phase transitions to the rock-salt phase and to the Cmcm phase, respectively. The other abnormal resistivity changes at about 6.5 GPa, 15.5 GPa, 22.2 GPa and about 30 GPa never observed before are due to the electronic phase transitions of CdTe. The origin of the abnormal change occurred at about 6.5 GPa is discussed. The temperature dependence of the resistivity of CdTe shows its semiconducting behaviour at least before 11.3 GPa.展开更多
文摘In the present paper, some novel opportunities for the development of high-efficient Si and III-V-based solar cells are considered: energy-saving environment friendly low-temperature technology of forming p-n junctions in Si (1), elaboration of structurally perfect GaAs/Ge/Si epitaxial substrates (2) and application of protective antireflecting coatings based on cubic zirconia (3). As a result: 1) New technique of forming p-n junctions in silicon has been elaborated. The technique provided easy and comparatively cheap process of production of semiconductor devices such as solar cells. The essence of the technique under the study is comprised in formation p-n junctions in silicon by a change of conductivity in the bulk of the sample occurring as a result of redistribution of the impurities, which already exists in the sample before its processing by ions. It differs from the techniques of diffusion and ion doping where change of conductivity and formation of p-n junction in the sample occur as a result of introduction of atoms of the other dopants from the outside;2) The conditions for synthesis of GaAs/Ge/Si epitaxial substrates with a thin (200 nm) Ge buffer layer featured with (1 - 2) × 105 cm-2 density of the threading dislocation in the GaAs layer. Ge buffer was obtained by chemical vapor deposition with a hot wire and GaAs layer of 1 μm thick was grown by the metal organic chemical vapor deposition. Root mean square surface roughness of GaAs layers of the less than 1 nm and good photoluminescence properties along with their high uniformity were obtained;3) The conditions ensuring the synthesis of uniform functional (buffer, insulating and protective) fianite layers on Si and GaAs substrates by means of magnetron and electron-beam sputtering have been determined. Fianite films have been shown to be suitable for the use as an ideal anti-reflecting material with high protective and anticorrosive properties.
文摘The effect of doping concentrations and a transverse external magnetostatic field on operational characteristics of parametric amplification of backward Stokes signal has been studied, using hydrodynamic model of semiconductors, in the far infrared regime. The model suggests three achievable resonance conditions: (i) lattice frequency and plasma frequency (ii) stokes frequency and electron-cyclotron frequency (iii) stokes frequency and hybrid (plasma and electron-cyclotron) frequency and these conditions have been utilised, on one hand, to substantially reduce the value of threshold intensity for onset of the parametric amplification and on the other hand, for switching of parametric large positive and negative gain coefficient (i.e. amplification and absorption). For example a strong transverse magnetostatic field 10.0 T with free carrier concentration 1.5 x 1019m-3 enhances the gain by a factor of 103 as in its absence. Results also suggest that a weakly piezoelectric III–V semiconductor duly illuminated by slightly off-resonant not-too-high-power pulsed lasers with pulse duration sufficiently larger than the acoustic phonon lifetime is one of promising hosts for parametric amplifier/frequency converter.
基金supported by the National Natural Science Foundation of China(Nos.12274335 and 52202111)the Natural Science Foundation of Shaanxi Province(Nos.2022JM-008,2021JC-062,and 2019TD-020)This research used the resources of the HPCC platform in Xi’an Jiaotong University.
文摘III-V semiconductors such as GaAs are widely studied as promising candidates for high-speed integrated circuit.Despite these applications for conventional bulk structures,their fundamental physical properties in the nanoscale limit are still in scarcity,which is of great importance for the development of nanoelectronics.In this work,we demonstrate that the III-V semiconductor MX(M=Al,Ga,In;X=P,As,Sb)in its two-dimensional(2D)limit could exhibit double layer honeycomb(DLHC)configuration and distorted tetrahedral coordination,according to our first-principles calculations with HSE06 hybrid functional.It is found that surface reconstruction endows 2D III-V DLHCs with pronouncedly different electronic and magnetic properties from their bulk counterparts due to strong interlayer coupling.Mexican-hat-shape bands emerge at the top valence bands of pristine AlP,GaP,InP,AlAs,and InAs DLHCs,inducing the density of states showing a sharp van Hove singularity near the Fermi level.As a result,these DLHCs exhibit itinerant magnetism upon moderate hole doping,while the rest GaAs,AlSb,GaSb,and InSb DLHCs become magnetic under tensile strain with hole doping.With an exchange splitting of the localized pz states at the top valence bands,the hole-doped III-V DLHCs become half-metals with 100%spin-polarization.Remarkably,the InSb DLHC shows inverted band structure near the Fermi level,bringing about nontrivial topological band structures in stacked InSb DLHC due to the strong spin-orbital coupling.These III-V DLHCs expand the members of 2D material family and their exotic magnetic and topological properties may offer great potential for applications in the novel electronic and spintronic devices.
基金Supported by National Natural Science Foundation of China(11474248,61176127,61006085,61274013,61306013)Key Program for International S&T cooperation Projects of China(2011DFA62380)Ph.D.Programs Foundation of Ministry of Education of China(20105303120002)
基金National High-tech R＆D program of China （863 Program, 2014AA032602） National Key R＆D program （2016YFB0400400） Shanghai Engineering Research Center of Single Crystal Silicon Carbide
文摘Nonlinear frequency conversion is one of the most fundamental processes in nonlinear optics.It has a wide range of applications in our daily lives,including novel light sources,sensing,and information processing.It is usually assumed that nonlinear frequency conversion requires large crystals that gradually accumulate a strong effect.However,the large size of nonlinear crystals is not compatible with the miniaturisation of modern photonic and optoelectronic systems.Therefore,shrinking the nonlinear structures down to the nanoscale,while keeping favourable conversion efficiencies,is of great importance for future photonics applications.In the last decade,researchers have studied the strategies for enhancing the nonlinear efficiencies at the nanoscale,e.g.by employing different nonlinear materials,resonant couplings and hybridization techniques.In this paper,we provide a compact review of the nanomaterials-based efforts,ranging from metal to dielectric and semiconductor nanostructures,including their relevant nanofabrication techniques.
基金Supported by the National Natural Science Foundation of China under Grant Nos 10776022, 10576020, and 60436010.
文摘A first-principles plane wave method with the ultrasoft pseudopotential scheme in the frame of the density functional theory （DFT） is performed to calculate the lattice parameters a and c, the bulk modulus B0 and its pressure derivative B0 of the zinc-blende GaAs （ZB-GaAs）, rocksalt GaAs （RS-GaAs）, CsCl-GaAs, NiAs- GaAs and wurtzite GaAs （WZ-GaAs）. Our results are consistent with the available experimental data and other theoretical results. We also calculate the phase transition pressures among these different phases. The results are satisfactory.
基金Project supported by the National Natural Science Foundation of China(Grant No.60866001)the Doctorate Foundation of the Education Ministry of China(Grant No.20105201110003)
文摘In order to predict the actual quantity of non-bulk GaAs layers after long-time homoepitaxy on GaAs （001） by theo- retical calculation, a half-terrace diffusion model based on thermodynamics is used to calculate the ripening time of GaAs layers to form a fiat morphology in annealing. To verify the accuracy of the calculation, real space scanning tunneling microscopy images of GaAs surface after different annealing times are obtained and the roughness of the GaAs surface is measured. The results suggest that the half terrace model is an accurate method with a relative error of about 4.1%.
基金supported by the National Natural Science Foundation of China (Grant Nos. 60801036 and 61067001)the Research and Innovation Plan for Graduate Students of Jiangsu Higher Education Institutions (Grant No. CX09B 096Z)the Research Foundation of Nanjing University of Science and Technology (Grant No. 2010ZYTS032)
文摘In view of the important application of GaAs and GaN photocathodes in electron sources, differences in photoe- mission behaviour, namely the activation process and quantum yield decay, between the two typical types of III-V compound photocathodes have been investigated using a multi-information measurement system. The activation exper- iment shows that a surface negative electron affinity state for the GaAs photocathode can be achieved by the necessary Cs-O two-step activation and by Cs activation alone for the GaN photocathode. In addition, a quantum yield decay experiment shows that the GaN photocathode exhibits better stability and a longer lifetime in a demountable vacuum system than the GaAs photocathode. The results mean that GaN photocathodes are more promising candidates for electron source emitter use in comparison with GaAs photocathodes.
基金Supported by the National Natural Science Foundation of China under Grant Nos 40473034, 40404007, 10574055, and 50532020, and the National Basic Research Programme of China under Grant No 2005CB724404. To whom correspondence should be addressed.
文摘In situ resistivity measurement has been performed to investigate the electron transport property of powered CdTe under high pressure and moderate temperature in a designed diamond anvil cell. Several abnormal resistivity changes can be found at room temperature when the pressure increases from ambient to 33 GPa. The abnormal resistivity changes at about 3.8 GPa and 10 GPa are caused by the structural phase transitions to the rock-salt phase and to the Cmcm phase, respectively. The other abnormal resistivity changes at about 6.5 GPa, 15.5 GPa, 22.2 GPa and about 30 GPa never observed before are due to the electronic phase transitions of CdTe. The origin of the abnormal change occurred at about 6.5 GPa is discussed. The temperature dependence of the resistivity of CdTe shows its semiconducting behaviour at least before 11.3 GPa.
