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IC design of low power, wide tuning range VCO in 90 nm CMOS technology 被引量:1
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作者 李竹 王志功 +2 位作者 李智群 李芹 刘法恩 《Journal of Semiconductors》 EI CAS CSCD 2014年第12期133-138,共6页
A low power VCO with a wide tuning range and low phase noise has been designed and realized in a standard 90 nm CMOS technology. A newly proposed current-reuse cross-connected pair is utilized as a negative conductanc... A low power VCO with a wide tuning range and low phase noise has been designed and realized in a standard 90 nm CMOS technology. A newly proposed current-reuse cross-connected pair is utilized as a negative conductance generator to compensate the energy loss of the resonator. The supply current is reduced by half compared to that of the conventional LC-VCO. An improved inversion-mode MOSFET(IMOS) varactor is introduced to extend the capacitance tuning range from 32.8% to 66%. A detailed analysis of the proposed varactor is provided. The VCO achieves a tuning range of 27–32.5 GHz, exhibiting a frequency tuning range(FTR) of 18.4%and a phase noise of –101.38 dBc/Hz at 1 MHz offset from a 30 GHz carrier, and shows an excellent FOM of –185dBc/Hz. With the voltage supply of 1.5 V, the core circuit of VCO draws only 2.1 m A DC current. 展开更多
关键词 CMOS MICROWAVE millimeter wave imos varactor phase noise voltage controlled oscillators
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