A reverse biased p-n junction diode with proper resonant cavity and boundary conditions is able to generate rf power and shows normal DC and small signal properties designed with semiconductor materials like 4H-SiC, G...A reverse biased p-n junction diode with proper resonant cavity and boundary conditions is able to generate rf power and shows normal DC and small signal properties designed with semiconductor materials like 4H-SiC, GaAs, InP, Si-based DDR IMPATT structure at Ka band with dark condition. But when it is exposed to optical illumination through a proper optical window for both top mounted（TM） and flip chip（FC） configuration,it shows the influence on the oscillator performances in that band of frequency. The simulated results are analyzed for 36 GHz window frequency in each of the diodes and relative differences are found in power output and frequency of all these diodes with variable intensities of illumination. Finally it is found that optical control has immense effect in both FC and TM mode regarding the reduction of output power and shifting of operating frequency from which optimization is done for the best optically sensitive material for IMPATT diode.展开更多
The prospects ofa p＋nn＋ cubic silicon carbide （3C-SiC/fl-SiC） based IMPATT diode as a potential solidstate terahertz source is studied for the first time through a modified generalized simulation scheme. The simul...The prospects ofa p＋nn＋ cubic silicon carbide （3C-SiC/fl-SiC） based IMPATT diode as a potential solidstate terahertz source is studied for the first time through a modified generalized simulation scheme. The simulation predicts that the device is capable of generating an RF power output of 63.0 W at 0.33 THz with an efficiency of 13%. The effects of parasitic series resistance on the device performance and exploitable RF power level are further simulated. The studies clearly establish the potential of 3C-SiC as a base semiconductor material for a high-power THz IMPATT device. Based on the simulation results, an attempt has been made to fabricate β-SiC based IMPATT devices in the THz region. Single crystalline, epitaxial 3C-SiC films are deposited on silicon （Si） （100） substrates by rapid thermal chemical vapour deposition （RTPCVD） at a temperature as low as 800 ℃ using a single precursor methylsilane, which contains Si and C atoms in the same molecule. No initial surface carbonization step is required in this method. A p-n junction with an n-type doping concentration of 4 × 10^24 m-3 （which is similar to the simulated design data） has been grown successfully and the characterization of the grown 3C-SiC film is reported in this paper. It is found that the inclusion of Ge improves the crystal quality and reduces the surface roughness.展开更多
文摘A reverse biased p-n junction diode with proper resonant cavity and boundary conditions is able to generate rf power and shows normal DC and small signal properties designed with semiconductor materials like 4H-SiC, GaAs, InP, Si-based DDR IMPATT structure at Ka band with dark condition. But when it is exposed to optical illumination through a proper optical window for both top mounted（TM） and flip chip（FC） configuration,it shows the influence on the oscillator performances in that band of frequency. The simulated results are analyzed for 36 GHz window frequency in each of the diodes and relative differences are found in power output and frequency of all these diodes with variable intensities of illumination. Finally it is found that optical control has immense effect in both FC and TM mode regarding the reduction of output power and shifting of operating frequency from which optimization is done for the best optically sensitive material for IMPATT diode.
文摘The prospects ofa p＋nn＋ cubic silicon carbide （3C-SiC/fl-SiC） based IMPATT diode as a potential solidstate terahertz source is studied for the first time through a modified generalized simulation scheme. The simulation predicts that the device is capable of generating an RF power output of 63.0 W at 0.33 THz with an efficiency of 13%. The effects of parasitic series resistance on the device performance and exploitable RF power level are further simulated. The studies clearly establish the potential of 3C-SiC as a base semiconductor material for a high-power THz IMPATT device. Based on the simulation results, an attempt has been made to fabricate β-SiC based IMPATT devices in the THz region. Single crystalline, epitaxial 3C-SiC films are deposited on silicon （Si） （100） substrates by rapid thermal chemical vapour deposition （RTPCVD） at a temperature as low as 800 ℃ using a single precursor methylsilane, which contains Si and C atoms in the same molecule. No initial surface carbonization step is required in this method. A p-n junction with an n-type doping concentration of 4 × 10^24 m-3 （which is similar to the simulated design data） has been grown successfully and the characterization of the grown 3C-SiC film is reported in this paper. It is found that the inclusion of Ge improves the crystal quality and reduces the surface roughness.
