Characteristics of High In-Content InGaN Alloys Grown by MOCVD

InN and In0.46 Ca0.54N films are grown on sapphire with a CaN buffer by metalorganic chemical vapour deposition （MOCVD）. Both high resolution x-ray diffraction and high resolution transmission electron microscopy results reveal that these films have a hexagonal structure of single crystal. The thin InN film has a high mobility of 4 75 cm^2V^-1s^-1 and that oflno.46 Gao.54N is 163 cm^2 V^-1s^-1. Room-temperat ure photoluminescence measurement of the InN film shows a peak at 0.72eV, confirming that a high quality InN film is fabricated for applications to full spectrum solar cells.

DC Characteristics of Lattice-Matched InAlN/AlN/GaN High Electron Mobility Transistors

Lattice-matched InAlN/AlN/GaN high electron mobility transistors (HEMTs) grown on sapphire substrate by using low-pressure metallorganic chemical vapor deposition were prepared, and the comprehensive DC characteristics were implemented by Keithley 4200 Semiconductor Characterization System. The experimental results indicated that a maximum drain current over 400 mA/mm and a peak external transconductance of 215 mS/mm can be achieved in the initial HEMTs. However, after the devices endured a 10-h thermal aging in furnace under nitrogen condition at 300 ℃, the maximum reduction of saturation drain current and external transconductance at high gate-source voltage and drain-source voltage were 30% and 35%, respectively. Additionally, an increased drain-source leakage current was observed at three-terminal off-state. It was inferred that the degradation was mainly related to electron-trapping defects in the InAlN barrier layer.

Performance of La203/InA1N/GaN metal-oxide-semiconductor high electron mobility transistors

We report on the performance of La203/InA1N/GaN metal-oxide-semiconductor high electron mobility transistors （MOSHEMTs） and InA1N/GaN high electron mobility transistors （HEMTs）. The MOSHEMT presents a maximum drain current of 961 mA/mm at Vgs = 4 V and a maximum transconductance of 130 mS/mm compared with 710 mA/mm at Vgs = 1 V and 131 mS/mm for the HEMT device, while the gate leakage current in the reverse direction could be reduced by four orders of magnitude. Compared with the HEMT device of a similar geometry, MOSHEMT presents a large gate voltage swing and negligible current collapse.

Electrically driven, phosphor-free, white light-emitting diodes using gallium nitride-based double concentric truncated pyramid structures

White light-emitting diodes(LEDs)are becoming an alternative general light source,with huge energy savings compared to conventional lighting.However,white LEDs using phosphor(s)suffer from unavoidable Stokes energy converting losses,higher manufacturing cost,and reduced thermal stability.Here,we demonstrate electrically driven,phosphor-free,white LEDs based on three-dimensional gallium nitride structures with double concentric truncated hexagonal pyramids.The electroluminescence spectra are stable with varying current.The origin of the emission wavelength is studied by cathodoluminescence and high-angle annular dark field scanning transmission electron microscopy experiments.Spatial variation of the carrier injection efficiency is also investigated by a comparative analysis between spatially resolved photoluminescence and electroluminescence.

[0001]-Oriented InN Nanoleaves and Nanowires: Synthesis,Growth Mechanism and Optical Properties

Novel indium nitride （INN） leaf-like nanosheets and nanowires have been grown on Si substrate by chemical vapor deposition method. The characterization results indicate that the samples are single-crystalline, and the growth direction of the nanowires and nanoleaves is [0001]. The growth mechanism of the InN nanoleaves is following the pattern of vapor-liquid-solid process with a three-step growth process. In addition, the room temperature photoluminescence spectra of two nanostructures show band-to-band emissions around 0.706 eV, where the emission from single nanoleaf is stronger than nanowire, showing potential for applications in optoelectronic devices.

Structure and photoluminescence properties of InN films grown on porous silicon by MOCVD

In this work, indium nitride(InN) films were successfully grown on porous silicon(PS) using metal oxide chemical vapor deposition(MOCVD) method. Room temperature photoluminescence(PL) and field emission scanning electron microscopy(FESEM) analyses are performed to investigate the optical, structural and morphological properties of the InN/PS nanocomposites. FESEM images show that the pore size of InN/PS nanocomposites is usually less than 4 μm in diameter, and the overall thickness is approximately 40 μm. The InN nanoparticles penetrate uniformly into PS layer and adhere to them very well. Nitrogen(N) and indium(In) can be detected by energy dispersive spectrometer(EDS). An important gradual decrease of the PL intensity for PS occurs with the increase of oxidation time, and the PL intensity of PS is quenched after 24 h oxidization. However, there is a strong PL intensity of InN/PS nanocomposites at 430 nm(2.88 eV), which means that PS substrate can influence the structural and optical properties of the InN, and the grown InN on PS substrate has good optical quality.