In this paper, the design and verification process of an automobile-engine-fan control system on chip （SoC） are introduced. The SoC system, SHU-MV08, reuses four new intellectual property （IP） cores and the design...In this paper, the design and verification process of an automobile-engine-fan control system on chip （SoC） are introduced. The SoC system, SHU-MV08, reuses four new intellectual property （IP） cores and the design flow is accomplished with 0.35 btm chartered CMOS technology. Some special functions of IP cores, the detailed integration scheme of four IP cores, and the verification method of the entire SoC are presented. To settle the verification problems brought by analog IP cores, NanoSim based chip-level mixed-signal verification method is introduced. The verification time is greatly reduced and the first tape-out achieves success which proves the validity of our design.展开更多
This work aims to determine the characteristic PN junction diode, subject to a reverse polarization, while I （breakdown voltage） of the inverse current in a GaAs specifying the parameters that influence the breakdow...This work aims to determine the characteristic PN junction diode, subject to a reverse polarization, while I （breakdown voltage） of the inverse current in a GaAs specifying the parameters that influence the breakdown voltage of the diode. In this work, we simulated the behavior of the ionization phenomenon by impact breakdown by avalanche of the PN junctions, subject to an inverse polarization. We will take into account both the trapping model in a stationary regime in the P＋N structure using like material of basis the Ⅲ-Ⅴ compounds and mainly the GaAs semi-insulating in which the deep centers have in important densities. We are talking about the model of trapping in the space charge region （SCR） and that is the trap density donor and acceptor states. The carrier crossing the space charge region （SCR） of W thickness creates N electron-hole pairs： for every created pair, the electron and the hole are swept quickly by the electric field, each in an opposite direction, which comes back, according to an already accepted reasoning, to the crossing of the space charge region （SCR） by an electron or a hole. So the even N pair created by the initial particle provoke N2 ionizations and so forth. The study of the physical and electrical behaviour of semiconductors is based on the influence of the presence of deep centers on the characteristic I（V） current-tension, which requires the calculation of the electrostatic potential, the electric field, the integral of ionization, the density of the states traps, the diffusion current of minority in the regions （1） and （3）, the current thermal generation in the region （2）, the leakage current in the surface, and the breakdown voltage.展开更多
基金Project supported by the IC Special Foundation of Shanghai Municipal Commission of Science and Technology (Grant No.09706201300)the Shanghai Municipal Commission of Economic and Information (Grant No.090344)the Shanghai High-Tech Industrialization of New Energy Vehicles (Grant No.09625029),and the Graduate Innovation Foundation of Shanghai University
文摘In this paper, the design and verification process of an automobile-engine-fan control system on chip （SoC） are introduced. The SoC system, SHU-MV08, reuses four new intellectual property （IP） cores and the design flow is accomplished with 0.35 btm chartered CMOS technology. Some special functions of IP cores, the detailed integration scheme of four IP cores, and the verification method of the entire SoC are presented. To settle the verification problems brought by analog IP cores, NanoSim based chip-level mixed-signal verification method is introduced. The verification time is greatly reduced and the first tape-out achieves success which proves the validity of our design.
文摘This work aims to determine the characteristic PN junction diode, subject to a reverse polarization, while I （breakdown voltage） of the inverse current in a GaAs specifying the parameters that influence the breakdown voltage of the diode. In this work, we simulated the behavior of the ionization phenomenon by impact breakdown by avalanche of the PN junctions, subject to an inverse polarization. We will take into account both the trapping model in a stationary regime in the P＋N structure using like material of basis the Ⅲ-Ⅴ compounds and mainly the GaAs semi-insulating in which the deep centers have in important densities. We are talking about the model of trapping in the space charge region （SCR） and that is the trap density donor and acceptor states. The carrier crossing the space charge region （SCR） of W thickness creates N electron-hole pairs： for every created pair, the electron and the hole are swept quickly by the electric field, each in an opposite direction, which comes back, according to an already accepted reasoning, to the crossing of the space charge region （SCR） by an electron or a hole. So the even N pair created by the initial particle provoke N2 ionizations and so forth. The study of the physical and electrical behaviour of semiconductors is based on the influence of the presence of deep centers on the characteristic I（V） current-tension, which requires the calculation of the electrostatic potential, the electric field, the integral of ionization, the density of the states traps, the diffusion current of minority in the regions （1） and （3）, the current thermal generation in the region （2）, the leakage current in the surface, and the breakdown voltage.
