IR Li2Ga2GeS6 nonlinear crystals were directly obtained with the composition of 40GeS2- 30Ga2Ss-30LieS, by the conventional melt-quenching method. The high depth digital image indicated that the obtained LizGa2GeS6 cr...IR Li2Ga2GeS6 nonlinear crystals were directly obtained with the composition of 40GeS2- 30Ga2Ss-30LieS, by the conventional melt-quenching method. The high depth digital image indicated that the obtained LizGa2GeS6 crystals showed a big size of 0.3 × 0.25 × 0.3 mm3. It was shown that the compound was very suscepfive to H20 with second harmonic observation. Besides, the glass-forming region of GeS2-Ga2S3- Li2S system was further studied by the conventional melt-quenching method.GeS2-Ga2S3-Li2S glass-ceramics containing IR Li2Ga2GeS6 nonlinear nanocrystals were obtained at a more carefully controlled heating rate.展开更多
By the method of descending crucible with rotation, crack-free CdGeAs2single crystals of U15 mm 950 mm were grown in a furnace with three independen heating zones after optimizing the temperature field, and the descen...By the method of descending crucible with rotation, crack-free CdGeAs2single crystals of U15 mm 950 mm were grown in a furnace with three independen heating zones after optimizing the temperature field, and the descending and rotational speed to meet the need of CdGeAs2crystal growth. The properties of as-grown crysta were characterized by a variety of techniques. The results of X-ray diffraction（XRD） show that there are two cleavage faces, which are（110） and（101）. The peaks are in high intensity and good symmetry, which demonstrates that the crystal is integral in structure and well crystallized. The energy-dispersive spectrometry results indicate that the wafer of the CdGeAs2crystal is closer to the stoichiometry The IR transmittance of the wafer is ＊48.6 % at 5.5 lm, and the maximum value is up to 51.6 % in the range of2.3–18.0 lm. Etch pits of（001） face are observed and the density of the etch pits is evaluated to be 1 9 105cm-2.展开更多
基金Funded by the National Natural Science Foundation of China(No.51272183)the Nanotechnology Program of Suzhou(No.ZXG201438)
文摘IR Li2Ga2GeS6 nonlinear crystals were directly obtained with the composition of 40GeS2- 30Ga2Ss-30LieS, by the conventional melt-quenching method. The high depth digital image indicated that the obtained LizGa2GeS6 crystals showed a big size of 0.3 × 0.25 × 0.3 mm3. It was shown that the compound was very suscepfive to H20 with second harmonic observation. Besides, the glass-forming region of GeS2-Ga2S3- Li2S system was further studied by the conventional melt-quenching method.GeS2-Ga2S3-Li2S glass-ceramics containing IR Li2Ga2GeS6 nonlinear nanocrystals were obtained at a more carefully controlled heating rate.
基金financially supported by the National Natural Science Foundation Key Programs of China (No. 50732005)the National High Technology Research and Development Program of China (No. 2007AA03Z443)
文摘By the method of descending crucible with rotation, crack-free CdGeAs2single crystals of U15 mm 950 mm were grown in a furnace with three independen heating zones after optimizing the temperature field, and the descending and rotational speed to meet the need of CdGeAs2crystal growth. The properties of as-grown crysta were characterized by a variety of techniques. The results of X-ray diffraction（XRD） show that there are two cleavage faces, which are（110） and（101）. The peaks are in high intensity and good symmetry, which demonstrates that the crystal is integral in structure and well crystallized. The energy-dispersive spectrometry results indicate that the wafer of the CdGeAs2crystal is closer to the stoichiometry The IR transmittance of the wafer is ＊48.6 % at 5.5 lm, and the maximum value is up to 51.6 % in the range of2.3–18.0 lm. Etch pits of（001） face are observed and the density of the etch pits is evaluated to be 1 9 105cm-2.
