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A NOVEL OPTICALLY TRANSPARENT THIN LAYER ELECTRODE FOR IN SITU IR SPECTROELECTROCHEMISTRY
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作者 YiJinXIAO Han Xi YANG ChuanSin CHA (Dept.of Chemistry,Wuhan Univ.,430072)Zi Gang FENG Hua TONG (Anal.Center,Wuhan Univ.) 《Chinese Chemical Letters》 SCIE CAS CSCD 1991年第4期329-330,共2页
A novel design of IR OTTLE is shown to have sufficient sensitivity and experi- mental simplicity for obtaining IR spectra of the species generated during electrochemical oxidation-reduction.
关键词 ir A NOVEL OPTICALLY TRANSPARENT THIN LAYER ELECTRODE FOR IN SITU ir SPECTROELECTROCHEMISTRY
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Optical and near-infrared photometric study of NGC 6724
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作者 Reda Bendary Ashraf Tadross +2 位作者 Priya Hasan Anas Osman Ahmed Essam 《Research in Astronomy and Astrophysics》 SCIE CAS CSCD 2018年第2期37-42,共6页
BVRI CCD photometry of the poorly studied open cluster NGC 6724 has been carried out down to a limiting magnitude of V-20 mag. The stars of the cluster have been observed using the Newtonian focus (f/4.84) of the 74... BVRI CCD photometry of the poorly studied open cluster NGC 6724 has been carried out down to a limiting magnitude of V-20 mag. The stars of the cluster have been observed using the Newtonian focus (f/4.84) of the 74-inch telescope at Kottamia Astronomical Observatory in Egypt. Also, the 2MASS - JHK system is used to confirm the results we obtained. The main photometric parameters have been estimated for the present object; the diameter is found to be 6 arcmin, the distance is 15304-60pc from the Sun and the age is 900+50Myr. The optical reddening E(B - V) = 0.65 mag, while the infrared reddening is E(J - H) = 0.20 mag. The slope of the mass function distribution and the relaxation time estimations indicate that cluster NGC 6724 is dynamically relaxed. 展开更多
关键词 Milky Way -- open clusters and associations: individual (NGC 6724) - optical photom-etry - ir photometry - color-magnitude diagrams
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Simple yet extraordinary: Super-polyhedra-built 3D chalcogenide framework of Cs_(5)Ga_(9)S_(16) with excellent infrared nonlinear optical performance
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作者 Hong Chen Mao-Yin Ran +3 位作者 Sheng-Hua Zhou Xin-Tao Wu Hua Lin Qi-Long Zhu 《Chinese Chemical Letters》 SCIE CAS CSCD 2023年第7期400-403,共4页
Non-centrosymmetric chalcogenides are attracting considerable attention as highly promising infrared nonlinear optical (IR-NLO) candidates,but it is challenging to simultaneously achieve sufficient secondharmonic-gene... Non-centrosymmetric chalcogenides are attracting considerable attention as highly promising infrared nonlinear optical (IR-NLO) candidates,but it is challenging to simultaneously achieve sufficient secondharmonic-generation coefficient (d_(eff)>0.5×AgGaS_(2)) and large energy gap (E_g>3.5 e V).In this work,a novel ternary chalcogenide,Cs_(5)Ga_(9)S_(16) with an ultra-wide E_gof 4.05 e V,has been successfully obtained.This sulfide belongs to the monoclinic space group Pn (No.7) with a novel 3D anionic[Ga_(9)S_(16)]^(5–)framework that is formed by super-polyhedral[Ga_(9)S_(23)]units through corner-sharing S atoms.Such a unique crystal structure displays desirable characteristics which indicate a promising IR-NLO candidate:favourable phase-matching feature,sufficient d_(eff)(0.7×AgGaS_(2)),ultrahigh laser-induced damage threshold (31.6×AgGaS_(2)) and broad transparent region (0.27-14.96μm).In addition,systematic theoretical studies and structural analysis suggest that the desirable IR-NLO performances can be attributed to the super-polyhedral building blocks.This finding may provide useful insight into the understanding and designing other high-performance IR-NLO candidates with super-polyhedral-built structures. 展开更多
关键词 CHALCOGENIDE ir nonlinear optic Super-polyhedra-built framework Wide energy gap Structure-activity relationship
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Electrical and optical property of annealed Te-doped GaSb
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作者 Jie Su Tong Liu +6 位作者 Jingming Liu Jun Yang Guiying Shen Yongbiao Bai Zhiyuan Dong Fangfang Wang Youwen Zhao 《Journal of Semiconductors》 EI CAS CSCD 2017年第4期18-22,共5页
GaSb is the most suitable substrate in the epitaxial growth of mixed semiconductors of GaSb system.In this work,Te-doped GaSb bulk crystals with different doping concentration have been annealed at 550℃ for100 h in a... GaSb is the most suitable substrate in the epitaxial growth of mixed semiconductors of GaSb system.In this work,Te-doped GaSb bulk crystals with different doping concentration have been annealed at 550℃ for100 h in ambient antimony.The annealed samples have been studied by Hall effect measurement,infrared(IR)optical transmission,Glow discharge mass spectroscopy(GDMS) and photoluminescence(PL) spectroscopy.After annealing,Te-doped GaSb samples exhibit a decrease of carrier concentration and increase of mobility,along with an improvement of below gap IR transmission.Native acceptor related electrical compensation analysis suggests a formation of donor defect with deeper energy level.The mechanism of the variation of the defect and its influence on the material properties are discussed. 展开更多
关键词 Te-doped GaSb annealing Hall effect measurement photoluminescence spectroscopy ir optical transmission
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