Commercial indium-tin oxide glass:A catalyst electrode for efficient N_(2)reduction at ambient conditions

The typical Haber technical process for industrial NH_(3)production involves plenty of energy-consumption and large quantities of greenhouse gas emission.In contrast,electrochemical N_(2)reduction proffers environment-friendly and energy-efficient avenues to synthesize NH_(3)at mild conditions but demands efficient electrocatalysts for the N_(2)reduction reaction(NRR).Herein we report for the first time that commercial indium-tin oxide glass(ITO/G)can be used as a catalyst electrode toward artificial N_(2)fixation,as it demonstrates excellent selectivity at mild conditions.Such ITO/G delivers excellent NRR performance with a NH_(3)yield of 1.06×10^(-10) mol s^(-1) cm^(-2) and a faradaic efficiency of 6.17%at-0.40 V versus the reversible hydrogen electrode(RHE)in 0.5 M LiClO4.Furthermore,the ITO/G also possesses good electrochemical stability and durability.Finally,the possible reaction mechanism for the NRR on the ITO catalysts was explored using first-principles calculations.

In situ IR, pulse reaction and TPD-ITD study of catalytic performance of room-temperature carbon monoxide oxidation on supported gold catalysts

With in situ IR, two different CO adsorption bands were detected on various chemical state gold catalysts. One band is attributed to the linear CO on an oxidized gold catalyst(2100 cm -1 ), the other one is ascribed to the bridged CO on metallic gold (2085 cm -1 ). CO pulse reaction showed that Au/Fe 2O 3 catalyst had a room temperature activity even in the presence of moisture. The produced CO 2 was detained and more easily desorbed from supported gold catalyst than support oxide. TPD IDT results indicated that the O - 2 superoxide ions are the possible active oxygen species.

Phase evolutions of two kinds of co-precipitated indium-tin oxide pre-cursors by heat-treatment

Two kinds of indium-tin oxide (ITO) precursors, cubic indium hydroxide(In(OH)_3) and orthorhombic indium oxide hydroxide (InOOH), were prepared by a co-precipitationmethod. With the help of X-ray diffraction (XRD), thermo-gravimetric analysis (TGA) and differentialthermal analysis (DTA), phase evolutions from cubic In(OH)_3 and orthorhombic InOOH to cubic ITOsolid solution and rhombohedral ITO solid solution by heat-treatment had been comprehensivelyinvestigated. The transformation from cubic In(OH)_3 to cubic ITO solid solution started as low as150 deg C and ended at about 300 degC, and it exhibited an endothermic behavior. The transformationfrom orthorhombic InOOH to rhombohedral ITO solid solution started at 220 deg C and ended at about430 deg C. Moreover, this transformation was composed of two processes: the one was the dehydrationof InOOH exhibiting an endothermic behavior and the other was the transformation from dehydrationproducts to rhombohedral ITO solid solution exhibiting a strong exothermic behavior. RhombohedralITO solid solution was metastable in air and it would transform to cubic ITO solid solution byheat-treatment. The transformation from rhombohedral ITO solid solution to cubic ITO solid solutionstarted at 578 deg C and ended below 800 deg C, and it exhibited a weak exothermic behavior.

Improvement of Open-Circuit Voltage in Organic Photovoltaic Cells with Chemically Modified Indium-Tin Oxide

The possibility of the increase in open-circuit voltage of organic photovoltaic cells based primarily indium-tin oxide (ITO)/rubrene/fullerene/Al structure by changing the work function of ITO anodes and Al cathodes was described in this work. To change built-in potential preferably in order to increase the open-circuit voltage, the work function of ITO should be increased and work function of Al should be decreased. The correlation between the change in work functions of electrodes and performance of the organic photovoltaic cells before and after surface modifications was examined in detail. The enhancement of open-circuit voltage depends on a function of work function change of both ITO and Al electrode. We could show that the built-in potential in the cells played an important role in open-circuit voltage.

Microstructure and properties of indium tin oxide thin films deposited by RF-magnetron sputtering

Tin-doped indium oxide （ITO） thin films were prepared using conventional radio frequency （RF） planar magnetron sputtering equipped with IR irradiation using a ceramic target of In2O3/SnO2 with a mass ratio of 1：1 at various IR irradiation temperatures T1 （from room temperature to 400℃）. The refractive index, deposited ratio, and resistivity are functions of the sputtering Ar gas pressure. The microstructure of ITO thin films is related to IR T1, the crystalline seeds appear at T1= 300℃, and the films are amorphous at the temperature ranging from 27℃ to 400℃. AFM investigation shows that the roughness value of peak-valley of ITO thin film （Rp-v） and the surface microstructure of rio thin films have a close relation with T1. The IR irradiation results in a widening value of band-gap energy due to Burstein-Moss effect and the maximum visible transmittance shifts toward a shorter wavelength along with a decrease in the film＇s refractive index. The plasma wavelength and the refractive index of ITO thin films are relative to the T1. XPS investigation shows that the photoelectrolytic properties can be deteriorated by the sub-oxides. The deterioration can be decreased by increasing the oxygen flow rote （fo2）, and the mole ratio of Sn/In in the samples reduces with an increase info2.

ITO膜方块电阻测试条件的探讨

本文根据半导体材料薄层方块电阻的测试原理，探讨并提出了ＩＴＤ膜方块电 阻的测试条件．