Periodic transparent nanowires in ITO film fabricated via femtosecond laser direct writing

This paper reports the fabrication of regular large-area laser-induced periodic surface structures(LIPSSs)in indium tin oxide(ITO)films via femtosecond laser direct writing focused by a cylindrical lens.The regular LIPSSs exhibited good properties as nanowires,with a resistivity almost equal to that of the initial ITO film.By changing the laser fluence,the nanowire resistances could be tuned from 15 to 73 kΩ/mm with a consistency of±10%.Furthermore,the average transmittance of the ITO films with regular LIPSSs in the range of 1200-2000 nm was improved from 21%to 60%.The regular LIPSS is promising for transparent electrodes of nano-optoelectronic devices-particularly in the near-infrared band.

Properties of Reactive Magnetron Sputtered ITO Films without in-situ Substrate Heating and Post-deposition Annealing

Indium tin oxide (ITO) films were prepared on polyester, Si and glass substrate with relatively high deposition rate of above 0.9 nm/s by DC reactive magnetron sputtering technique at the sputtering pressure of 0.06 Pa system, respectively. The dependence of resistivity on deposition parameters, such as deposition rate, target-to-substrate distance (TSD), oxygen flow rate and sputtering time (thickness), has been investigated, together with the structural and the optical properties. It was revealed that all ITO films exhibited lattice expansion. The resistivity of ITO thin films shows significant substrate effect: much lower resistivity and broader process window have been reproducibly achieved for the deposition of ITO films onto polyester rather than those prepared on both Si and glass substrates. The films with resistivity of as low as 4.23 x 10^-4 Ω.cm and average transmittance of ～78% at wavelength of 400～700 nm have been achieved for the films on polyester at room temperature.

Study on adhesion and electro-optical properties of ITO films on flexible PET substrate

High-quality ITO films on flexible PET substrate were prepared by RF magnetron sputtering at low deposition temperature with different Ar gas sputtering pressure.Adhesion and electro-optical properties of ITO films were investigated as a function of Ar partial pressure.The sputtering conditions provide very uniform ITO films with high transparency(>85%in 400-760 nm spectra)and low electrical resistivity(1.408×10^(-3)-1.956×10^(-3)Ω·cm).Scratch test experiments indicate that there is a good adhesion property between ITO films and PET substrate,the critical characteristic load increases from 16.5 to 23.2 N with increasing Ar sputtering pressure from 0.2 to 1.4 Pa.

ITO Film应用于投射式电容触控面板的趋势分析

薄膜式投射电容及玻璃式投射电容是投射电容式触控面板的两种主要技术。当前随着ITOGlass的供不应求,越来越多的厂商投身于ITO Film技术的开发与应用。文章主要介绍了两种投射电容式触控技术的现况、优缺点及未来市场发展趋势。

Tuning optical properties of ITO films grown by rf sputtering:Effects of oblique angle deposition and thermal annealing

Indium tin oxide(ITO)thin films were prepared using the technique of rf-sputtering with oblique angle deposition(OAD).The films were as-deposited and thermally treated at 250℃.The combination of substrate inclination and annealing was used for modifying morphological and structural properties that lead to changes of the optical properties.The resulting films show morphology of tilted nanocolumn,fissures among columns,and structural changes.The as-deposited films are structurally disordered with an amorphous component and the annealed films are crystallized and more ordered and the film diffractograms correspond to the cubic structure of In2O3.The refractive index could be modified up to 0.3 in as-deposited films and up to 0.15 in annealed films as functions of the inclination angle of the nanocolumns.Similarly,the band gap energy increases up to about 0.4 eV due to the reduction of the microstrain distribution.It is found that the microstrain distribution,which is related to lattice distortions,defects and the presence of fissures in the films,is the main feature that can be engineered through morphological modifications for achieving the adjustment of the optical properties.

Effects of heat treatment on morphological,optical and electrical properties of ITO films by sol-gel technique

Indium-tin-oxide(ITO)films were prepared on the quarts glass by sol-gel technique.Effects of different heat treatment temperatures and cooling methods on the morphological,optical and electrical properties of ITO films were measured by TG/DTA, IR,XRD,SEM,UV-VIS spectrometer and four-probe apparatus.It is found that the crystallized ITO films exhibit a polycrystalline cubic bixbyite structure.The heat treatment process has significant effects on the morphological,optical and electrical properties of ITO films.Elevating the heat treatment temperature can perfect the crystallization process of ITO films,therefore the optical and electrical properties of ITO films are improved.But the further increasing of heat treatment temperature results in the increment of ITO films’resistivity.Compared with ITO films elaborated by furnace cooling,those prepared through air cooling have following characteristics as obviously decreased crystalline size,deeply declined porosity,more compact micro-morphology,improved electrical property and slightly decreased optical transmission.

Exploring negative ion behaviors and their influence on properties of DC magnetron sputtered ITO films under varied power and pressure conditions

We deposited indium-tin-oxide(ITO)films on silicon and quartz substrates by magnetron sputtering technology in pure argon.Using electrostatic quadrupole plasma diagnostic technology,we investigate the effects of discharge power and discharge pressure on the ion flux and energy distribution function of incidence on the substrate surface,with special attention to the production of high-energy negative oxygen ions,and elucidate the mechanism behind its production.At the same time,the structure and properties of ITO films are systematically characterized to understand the potential effects of high energy oxygen ions on the growth of ITO films.Combining with the kinetic property analysis of sputtering damage mechanism of transparent conductive oxide(TCO)thin films,this study provides valuable physical understanding of optimization of TCO thin film deposition process.

ITO/AgNWs/ITO薄膜的制备及其性能研究

随着显示面板向超大尺寸、超高清、可触控的方向发展,单一的氧化铟锡(ITO)薄膜难以满足显示器件越来越高的光电性能要求,因此复合导电薄膜得以发展。本文制备了以二维银纳米线(AgNWs)导电网络嵌入ITO薄膜形成的ITO(222)/AgNWs/ITO(400)复合薄膜结构,系统研究了AgNWs添加量和上层ITO薄膜溅射温度对复合薄膜结构与光电性能的影响,AgNWs金属导电网络不仅提升了薄膜的电学性能,还保持了优良的光学性能。结果表明,在旋涂600μL的AgNWs分散液、上层ITO薄膜的溅射温度为175℃时,制备的复合ITO薄膜方阻为7.13Ω/□,在550 nm处透过率为91.52%,且品质因数为57.82×10^(-3)Ω^(-1),实现了超低电阻率和高可见光透过率复合ITO薄膜的制备。

Effects of power on ion behaviors in radio-frequency magnetron sputtering of indium tin oxide(ITO)

This study delves into ion behavior at the substrate position within RF magnetron discharges utilizing an indium tin oxide(ITO)target.The positive ion energies exhibit an upward trajectory with increasing RF power,attributed to heightened plasma potential and initial emergent energy.Simultaneously,the positive ion flux escalates owing to amplified sputtering rates and electron density.Conversely,negative ions exhibit broad ion energy distribution functions(IEDFs)characterized by multiple peaks.These patterns are clarified by a combination of radiofrequency oscillation of cathode voltage and plasma potential,alongside ion transport time.This elucidation finds validation in a one-dimensional model encompassing the initial ion energy.At higher RF power,negative ions surpassing 100 e V escalate in both flux and energy,posing a potential risk of sputtering damages to ITO layers.

模压成型压力对氧化铟锡(ITO)靶材性能影响研究

以化学共沉淀-煅烧法制备的纳米ITO粉体为原料,通过模压、冷等静压成型,采用常压烧结法制备了ITO靶材,研究了模压成型压力对ITO靶材相对密度、电阻率和晶粒尺寸的影响。结果表明,模压成型压力60 MPa且烧结条件适宜时,制得的ITO靶材相对密度为99.81%、电阻率为1.707×10^(-4)Ω·cm、平均晶粒尺寸为7.62μm。研究结果可为ITO靶材的致密化与大型化生产提供借鉴。

High-performance omnidirectional self-powered photodetector constructed by CsSnBr_(3)/ITO heterostructure film

Omnidirectional photodetectors attract enormous attention due to their prominent roles in optical tracking systems and omnidirectional cameras.However,it is still a challenge for the construction of high-performance omnidirectional photodetectors where the incident light can be effectively absorbed in multiple directions and the photo-generated carriers can be effectively collected.Here,a high-performance omnidirectional self-powered photodetector based on the CsSnBr_(3)/indium tin oxide(ITO)heterostructure film was designed and demonstrated.The as-fabricated photodetector exhibited an excellent self-powered photodetection performance,showing responsivity and detectivity up to 35.1 mA/W and 1.82×10^(10) Jones,respectively,along with the smart rise/decay response time of 4 ms/9 ms.Benefitting from the excellent photoelectric properties of the CsSnBr_(3) film as well as the ability of the CsSnBr_(3)/ITO heterostructure to efficiently separate and collect photo-generated carriers,the as-fabricated photodetector also exhibited an excellent omnidirectional self-powered photodetection performance.All the results have certified that this work finds an efficient way to realize high-performance omnidirectional self-powered photodetectors.

退火处理对低阻LCD屏ITO薄膜光电性能的影响

采用磁控溅射法制备氧化铟锡(ITO)薄膜,对制备好的ITO薄膜样品进行不同温度、不同时间的退火处理。用WGT-S透过率雾度仪、四探针测试仪测量退火后的电阻屏ITO薄膜光电性能参数,并采用扫描电子显微镜观测退火前后薄膜的表面状态,分析退火处理对电阻屏ITO薄膜光电性能的影响。研究结果表明:制备的ITO薄膜的最佳退火温度为400℃,退火时间约为70 min。

ITO薄膜的制备及其光电性能研究

随着HJT太阳电池的发展,对其氧化铟锡(ITO)薄膜的研究日益增多。通过直流磁控溅射法在玻璃衬底上制备ITO薄膜,研究了氧含量、溅射功率、沉积温度及溅射气压对ITO薄膜光电性能的影响。研究结果显示:1)ITO薄膜的光电性能对氧含量较为敏感,随着氧含量增加,ITO薄膜的电阻率也随之增加,而透过率则呈先上升后下降,然后基本保持不变的趋势;2)随着沉积温度升高,ITO薄膜的透过率也随之升高,而电阻率则呈先下降后上升的趋势;3)随着溅射气压的升高,ITO薄膜的电阻率呈上升趋势,而透过率则是先降低再略微升高;4)当氧含量在1.8%~2.0%,溅射功率在3000~4000 W,沉积温度在150~190℃,溅射气压在0.5~0.7 Pa时,ITO薄膜具有较优的光电性能。因此,在合理范围内提高沉积温度,其则会具有退火作用,有助于进一步改善ITO薄膜的光电性能。

基于Drude模型ITO薄膜性能及工艺控制分析

利用离子辅助电子束蒸发技术制备锡掺杂氧化铟薄膜,参考“第四范式”研究思路,根据薄膜光学性质特点建立以Drude振子为核心的光学模型,从模型参数入手,分析载流子浓度、迁移率对光学性能影响,得出提高载流子迁移率能够同步提升薄膜产品的光、电性能。总结分析文献报道中的主要成果,提出性能提升工艺方案,样品经验证载流子迁移率由6.3 cm^(2)·V^(-1)·s^(-1)提高到18.3 cm^(2)·V^(-1)·s^(-1),厚度由315.5 nm减薄到155.2 nm情况下,面电阻由50.1 Ω/□减小到26.2Ω/□。

Finite Element Analysis for Temperature Compensation of ITO Conductive Film System

Indium tin oxide(ITO)heating film is primarily used as the defogging component of an instrument observation window.Conventionally,a constant current is used to heat the film.Through the feedback of the temperature sensing component,the output current is adjusted to achieve a set temperature.However,the temperature of the heating film is nonuniformly distributed,and determining the correct output current is time-consuming.This study adopted finite element heat transfer analysis to determine a heating method(such as heat power and heat flux)for an ITO conductive heating film system.The results of the analysis may serve as a reference for temperature compensation in ITO conductive heating films.

ITO thin films prepared by electron beam evaporation with End-Hall ion source assisted without heating to the substrate

ITO （indium oxide doped with tin） thin films were deposited on glass substrates by using ITO pellet with a composition of w（In2O3）=90% and w（SnO2）=10% by electron beam evaporated with End-Hall ion source assisted without extra heating. The rate of deposition and flow rate of oxygen were measured and changed to obtain the best properties of ITO thin films. Furthermore, the post annealing process was done in vacuum at different annealing temperatures for 2 h and at 400℃ for different keeping time, respectively. The relation between optical, electrical properties and structure was discussed in detail.

Properties of PET/ITO Thin Films Deposited by DC Magnetron Sputtering

In_2O_3∶SnO_2(ITO) thin films were fabricated on the substrate of flexible polyethylene terephthalate(PET) by DC magnetron sputtering from a ceramic target of In_2O_3/SnO_2(90∶10). Properties of the thin films were characterized by X-ray diffraction(XRD), four-point probe, Hall-effect measurement, UV-Vis spectrophotometer, and scanning electron microscopy(SEM). The effects of sputtering pressure, oxygen partial pressure and deposition temperature on properties of microstructure and optoelectronics properties of PET/ITO thin films were investigated in detail. High-quality ITO thin films on PET substrates with the resistivity as low as 8.5×10-4 Ω·cm and the optical transmittance over 80% in the visible spectrum range were obtained.

Preparation of ITO transparent conductive film by sol-gel method

The ITO transparent conductive films were prepared on substrate of quartz glass by sol-gel method.The raw materials were nitrate indium,acetylacetone and the dopant of anhydrous chloride(SnCl4).The process from gel to crystalline film and the microstructure of the films were investigated by DTA-TG,XRD and SEM.The influence of preparation processes on the electricity performance of the films was also studied by four-probe apparatus.The results show that the crystallization process of ITO xerogel completes when the heat treatment temperature reaches 600 ℃.The ITO films possesses on vesicular structures accumulated by spherical particles,and both heat treatment temperature and cooling rate have important effects on the resistivity of ITO films.

The Electrical Characterization and NIR Absorption of ITO Film under Different Sputtering Time

Indium-tin-oxide(ITO)films with different sputtering time have been prepared by dc magnetron sputtering method on PET substrate at room temperature.The film structure,thickness,electrical and optical properties are investigated through XRD,SEM,van der Pauw method and FTIR,respectively.The XRD results indicate that all the films are amorphous structure.With the increase of sputtering time,resistivity and transmittance decrease simultaneously.However the absorption gets stronger,especially in near-infrared light region.Through Drude model the plasma frequency is calculated and the calculation result is pretty consistent with films deposited at 60 and 90 min.

基底温度对射频磁控溅射PI基ITO薄膜的影响

采用射频(RF)磁控溅射法在柔性耐高温聚酰亚胺(PI)薄膜上沉积了氧化铟锡(ITO)薄膜,研究了基底温度对ITO薄膜性能的影响。运用四探针测试仪研究了基底温度对ITO薄膜方块电阻及电阻率的影响,并用扫描电子显微镜(SEM)、X射线衍射仪(XRD)研究了基底温度对ITO薄膜表面形貌及结晶度的影响。采用X射线光电子能谱仪(XPS)、附着力测试仪分析电学性能最优的样品化学组成与附着力。研究结果表明,ITO薄膜方块电阻及电阻率随基底温度上升先下降后上升,在基底温度为250℃时,ITO薄膜方块电阻为14.1Ω/□,电阻率为1.9×10^(-4)Ω·cm,基膜附着力好,薄膜结晶度高,(222)晶面存在择优取向。