This study delves into ion behavior at the substrate position within RF magnetron discharges utilizing an indium tin oxide(ITO)target.The positive ion energies exhibit an upward trajectory with increasing RF power,att...This study delves into ion behavior at the substrate position within RF magnetron discharges utilizing an indium tin oxide(ITO)target.The positive ion energies exhibit an upward trajectory with increasing RF power,attributed to heightened plasma potential and initial emergent energy.Simultaneously,the positive ion flux escalates owing to amplified sputtering rates and electron density.Conversely,negative ions exhibit broad ion energy distribution functions(IEDFs)characterized by multiple peaks.These patterns are clarified by a combination of radiofrequency oscillation of cathode voltage and plasma potential,alongside ion transport time.This elucidation finds validation in a one-dimensional model encompassing the initial ion energy.At higher RF power,negative ions surpassing 100 e V escalate in both flux and energy,posing a potential risk of sputtering damages to ITO layers.展开更多
This paper reports the fabrication of regular large-area laser-induced periodic surface structures(LIPSSs)in indium tin oxide(ITO)films via femtosecond laser direct writing focused by a cylindrical lens.The regular LI...This paper reports the fabrication of regular large-area laser-induced periodic surface structures(LIPSSs)in indium tin oxide(ITO)films via femtosecond laser direct writing focused by a cylindrical lens.The regular LIPSSs exhibited good properties as nanowires,with a resistivity almost equal to that of the initial ITO film.By changing the laser fluence,the nanowire resistances could be tuned from 15 to 73 kΩ/mm with a consistency of±10%.Furthermore,the average transmittance of the ITO films with regular LIPSSs in the range of 1200-2000 nm was improved from 21%to 60%.The regular LIPSS is promising for transparent electrodes of nano-optoelectronic devices-particularly in the near-infrared band.展开更多
Omnidirectional photodetectors attract enormous attention due to their prominent roles in optical tracking systems and omnidirectional cameras.However,it is still a challenge for the construction of high-performance o...Omnidirectional photodetectors attract enormous attention due to their prominent roles in optical tracking systems and omnidirectional cameras.However,it is still a challenge for the construction of high-performance omnidirectional photodetectors where the incident light can be effectively absorbed in multiple directions and the photo-generated carriers can be effectively collected.Here,a high-performance omnidirectional self-powered photodetector based on the CsSnBr_(3)/indium tin oxide(ITO)heterostructure film was designed and demonstrated.The as-fabricated photodetector exhibited an excellent self-powered photodetection performance,showing responsivity and detectivity up to 35.1 mA/W and 1.82×10^(10) Jones,respectively,along with the smart rise/decay response time of 4 ms/9 ms.Benefitting from the excellent photoelectric properties of the CsSnBr_(3) film as well as the ability of the CsSnBr_(3)/ITO heterostructure to efficiently separate and collect photo-generated carriers,the as-fabricated photodetector also exhibited an excellent omnidirectional self-powered photodetection performance.All the results have certified that this work finds an efficient way to realize high-performance omnidirectional self-powered photodetectors.展开更多
Indium tin oxide (ITO) films were prepared on polyester, Si and glass substrate with relatively high deposition rate of above 0.9 nm/s by DC reactive magnetron sputtering technique at the sputtering pressure of 0.06 P...Indium tin oxide (ITO) films were prepared on polyester, Si and glass substrate with relatively high deposition rate of above 0.9 nm/s by DC reactive magnetron sputtering technique at the sputtering pressure of 0.06 Pa system, respectively. The dependence of resistivity on deposition parameters, such as deposition rate, target-to-substrate distance (TSD), oxygen flow rate and sputtering time (thickness), has been investigated, together with the structural and the optical properties. It was revealed that all ITO films exhibited lattice expansion. The resistivity of ITO thin films shows significant substrate effect: much lower resistivity and broader process window have been reproducibly achieved for the deposition of ITO films onto polyester rather than those prepared on both Si and glass substrates. The films with resistivity of as low as 4.23 x 10^-4 Ω.cm and average transmittance of ～78% at wavelength of 400～700 nm have been achieved for the films on polyester at room temperature.展开更多
In_2O_3∶SnO_2(ITO) thin films were fabricated on the substrate of flexible polyethylene terephthalate(PET) by DC magnetron sputtering from a ceramic target of In_2O_3/SnO_2(90∶10). Properties of the thin films were ...In_2O_3∶SnO_2(ITO) thin films were fabricated on the substrate of flexible polyethylene terephthalate(PET) by DC magnetron sputtering from a ceramic target of In_2O_3/SnO_2(90∶10). Properties of the thin films were characterized by X-ray diffraction(XRD), four-point probe, Hall-effect measurement, UV-Vis spectrophotometer, and scanning electron microscopy(SEM). The effects of sputtering pressure, oxygen partial pressure and deposition temperature on properties of microstructure and optoelectronics properties of PET/ITO thin films were investigated in detail. High-quality ITO thin films on PET substrates with the resistivity as low as 8.5×10-4 Ω·cm and the optical transmittance over 80% in the visible spectrum range were obtained.展开更多
ITO （indium oxide doped with tin） thin films were deposited on glass substrates by using ITO pellet with a composition of w（In2O3）=90% and w（SnO2）=10% by electron beam evaporated with End-Hall ion source assiste...ITO （indium oxide doped with tin） thin films were deposited on glass substrates by using ITO pellet with a composition of w（In2O3）=90% and w（SnO2）=10% by electron beam evaporated with End-Hall ion source assisted without extra heating. The rate of deposition and flow rate of oxygen were measured and changed to obtain the best properties of ITO thin films. Furthermore, the post annealing process was done in vacuum at different annealing temperatures for 2 h and at 400℃ for different keeping time, respectively. The relation between optical, electrical properties and structure was discussed in detail.展开更多
Indium-tin-oxide(ITO)films were prepared on the quarts glass by sol-gel technique.Effects of different heat treatment temperatures and cooling methods on the morphological,optical and electrical properties of ITO film...Indium-tin-oxide(ITO)films were prepared on the quarts glass by sol-gel technique.Effects of different heat treatment temperatures and cooling methods on the morphological,optical and electrical properties of ITO films were measured by TG/DTA, IR,XRD,SEM,UV-VIS spectrometer and four-probe apparatus.It is found that the crystallized ITO films exhibit a polycrystalline cubic bixbyite structure.The heat treatment process has significant effects on the morphological,optical and electrical properties of ITO films.Elevating the heat treatment temperature can perfect the crystallization process of ITO films,therefore the optical and electrical properties of ITO films are improved.But the further increasing of heat treatment temperature results in the increment of ITO films’resistivity.Compared with ITO films elaborated by furnace cooling,those prepared through air cooling have following characteristics as obviously decreased crystalline size,deeply declined porosity,more compact micro-morphology,improved electrical property and slightly decreased optical transmission.展开更多
The ITO transparent conductive films were prepared on substrate of quartz glass by sol-gel method.The raw materials were nitrate indium,acetylacetone and the dopant of anhydrous chloride(SnCl4).The process from gel to...The ITO transparent conductive films were prepared on substrate of quartz glass by sol-gel method.The raw materials were nitrate indium,acetylacetone and the dopant of anhydrous chloride(SnCl4).The process from gel to crystalline film and the microstructure of the films were investigated by DTA-TG,XRD and SEM.The influence of preparation processes on the electricity performance of the films was also studied by four-probe apparatus.The results show that the crystallization process of ITO xerogel completes when the heat treatment temperature reaches 600 ℃.The ITO films possesses on vesicular structures accumulated by spherical particles,and both heat treatment temperature and cooling rate have important effects on the resistivity of ITO films.展开更多
High-quality ITO films on flexible PET substrate were prepared by RF magnetron sputtering at low deposition temperature with different Ar gas sputtering pressure. Adhesion and electro-optical properties of ITO films w...High-quality ITO films on flexible PET substrate were prepared by RF magnetron sputtering at low deposition temperature with different Ar gas sputtering pressure. Adhesion and electro-optical properties of ITO films were investigated as a function of Ar partial pressure. The sputtering conditions provide very uniform ITO films with high transparency (>85% in 400-760 nm spectra) and low electrical resistivity (1.408×10-3-1.956×10-3 Ω·cm). Scratch test experiments indicate that there is a good adhesion property between ITO films and PET substrate, the critical characteristic load increases from 16.5 to 23.2 N with increasing Ar sputtering pressure from 0.2 to 1.4 Pa.展开更多
In this paper a novel A1GalnP thin-film light-emitting diode （LED） with omni-directionally reflector （ODR） and transparent conducting indium tin oxide （ITO） n-type contact structure is proposed, and fabrication ...In this paper a novel A1GalnP thin-film light-emitting diode （LED） with omni-directionally reflector （ODR） and transparent conducting indium tin oxide （ITO） n-type contact structure is proposed, and fabrication process is developed. This reflector is realized with the combination of a low-refractive-index dielectric layer and a high reflectivity metal layer. This allows the light emitted or internally reflected downwardly towards the GaAs substrate at any angle of incidence to be reflected towards the top surface of the chip. ITO n-type contact is used for anti-reflection and current spreading layers on the ODR-LED with ITO. The sheet resistance of the ITO films （95 nm） deposited on n- ohmic contact of ODR-LED is of the order 23.5Ω/△ with up to 90% transmittance （above 92% for 590-770 nm） in the visible region of the spectrum. The optical and electrical characteristics of the ODR-LED with ITO are presented and compared to conventional AS-LED and ODR-LED without ITO. It is shown that the light output from the ODR-LED with ITO at forward current 20mA exceeds that of AS-LED and ODR-LED without ITO by about a factor of 1.63 and 0.16, respectively. A favourable luminous intensity of 218.3 mcd from the ODR-LED with ITO （peak wavelength 620 nm） could be obtained under 20 mA injection, which is 2.63 times and 1.21 times higher than that of AS-LED and ODR-LED without ITO, respectively.展开更多
A new effective tool design of three-rank form of electroremoval was present using a precision recycle system offering faster performance in removing the indium-tin-oxide(ITO) thin-films on color filter surface of dis...A new effective tool design of three-rank form of electroremoval was present using a precision recycle system offering faster performance in removing the indium-tin-oxide(ITO) thin-films on color filter surface of displays. Higher electric power is not required since the three-rank form tool is adopted as a feeding mode to reduce the response area. The low yield of ITO persists throughout the entire semiconductor production process. By establishing a recycle process of ultra-precise removal of the thin-film nanostructure, defective products in the optoelectronic semiconductors industry can be effectively recycled, decreasing both production costs and pollution. A 5th generation TFT-LCD was used. The design features of the removal processes for the thin-films and the tool design of three-rank form were of major interest. For the precision removal processes, a pulsed current can improve the effect of dreg discharge and contributes to the achievement of a fast workpiece (displays' color filter) feed rate, but raises the current rating. High flow velocity of the electrolyte with a high rotational speed of the tool electrodes elevates the ITO removal effect. A displays' color filter with a fast feed rate is combined with enough electric power to provide highly effective removal. A small thickness of the rank and a small arc angle of the negative-electrode correspond to a higher removal rate for ITO-film. An effective three-rank form negative-electrode provides larger discharge mobility and better removal effect. It only needs a short period of time to remove the ITO easily and cleanly.展开更多
基金financial supports by National Natural Science Foundation of China(Nos.11975163 and 12175160)Nantong Basic Science Research-General Program(No.JC22022034)Natural Science Research Fund of Jiangsu College of Engineering and Technology(No.GYKY/2023/2)。
文摘This study delves into ion behavior at the substrate position within RF magnetron discharges utilizing an indium tin oxide(ITO)target.The positive ion energies exhibit an upward trajectory with increasing RF power,attributed to heightened plasma potential and initial emergent energy.Simultaneously,the positive ion flux escalates owing to amplified sputtering rates and electron density.Conversely,negative ions exhibit broad ion energy distribution functions(IEDFs)characterized by multiple peaks.These patterns are clarified by a combination of radiofrequency oscillation of cathode voltage and plasma potential,alongside ion transport time.This elucidation finds validation in a one-dimensional model encompassing the initial ion energy.At higher RF power,negative ions surpassing 100 e V escalate in both flux and energy,posing a potential risk of sputtering damages to ITO layers.
基金We are grateful for financial supports from the Ministry of Science and Technology of China(Grant No.2021YFA1401100)National Natural Science Foundation of China(Grant Nos.12074123,11804227,91950112),and the Foundation of‘Manufacturing beyond limits’of Shanghai.
文摘This paper reports the fabrication of regular large-area laser-induced periodic surface structures(LIPSSs)in indium tin oxide(ITO)films via femtosecond laser direct writing focused by a cylindrical lens.The regular LIPSSs exhibited good properties as nanowires,with a resistivity almost equal to that of the initial ITO film.By changing the laser fluence,the nanowire resistances could be tuned from 15 to 73 kΩ/mm with a consistency of±10%.Furthermore,the average transmittance of the ITO films with regular LIPSSs in the range of 1200-2000 nm was improved from 21%to 60%.The regular LIPSS is promising for transparent electrodes of nano-optoelectronic devices-particularly in the near-infrared band.
基金supported by the National Key R&D Program of China under Grant No.2017YFA0305500National Natural Science Foundation of China under Grant No.61904096,Taishan Scholars Program of Shandong Province under Grant No.tsqn201812006+2 种基金Natural Science Foundation of Shandong Province under Grants No.ZR2022JQ05 and No.ZR2022QF025Shandong University Multidisciplinary Research and Innovation Team of Young Scholars under Grant No.2020QNQT015“Outstanding Youth Scholar and Qilu Young Scholar”Programs of Shandong University.
文摘Omnidirectional photodetectors attract enormous attention due to their prominent roles in optical tracking systems and omnidirectional cameras.However,it is still a challenge for the construction of high-performance omnidirectional photodetectors where the incident light can be effectively absorbed in multiple directions and the photo-generated carriers can be effectively collected.Here,a high-performance omnidirectional self-powered photodetector based on the CsSnBr_(3)/indium tin oxide(ITO)heterostructure film was designed and demonstrated.The as-fabricated photodetector exhibited an excellent self-powered photodetection performance,showing responsivity and detectivity up to 35.1 mA/W and 1.82×10^(10) Jones,respectively,along with the smart rise/decay response time of 4 ms/9 ms.Benefitting from the excellent photoelectric properties of the CsSnBr_(3) film as well as the ability of the CsSnBr_(3)/ITO heterostructure to efficiently separate and collect photo-generated carriers,the as-fabricated photodetector also exhibited an excellent omnidirectional self-powered photodetection performance.All the results have certified that this work finds an efficient way to realize high-performance omnidirectional self-powered photodetectors.
文摘Indium tin oxide (ITO) films were prepared on polyester, Si and glass substrate with relatively high deposition rate of above 0.9 nm/s by DC reactive magnetron sputtering technique at the sputtering pressure of 0.06 Pa system, respectively. The dependence of resistivity on deposition parameters, such as deposition rate, target-to-substrate distance (TSD), oxygen flow rate and sputtering time (thickness), has been investigated, together with the structural and the optical properties. It was revealed that all ITO films exhibited lattice expansion. The resistivity of ITO thin films shows significant substrate effect: much lower resistivity and broader process window have been reproducibly achieved for the deposition of ITO films onto polyester rather than those prepared on both Si and glass substrates. The films with resistivity of as low as 4.23 x 10^-4 Ω.cm and average transmittance of ～78% at wavelength of 400～700 nm have been achieved for the films on polyester at room temperature.
基金Chinese Ministry of Science and Technology for financial support under construct(2003AA513010)
文摘In_2O_3∶SnO_2(ITO) thin films were fabricated on the substrate of flexible polyethylene terephthalate(PET) by DC magnetron sputtering from a ceramic target of In_2O_3/SnO_2(90∶10). Properties of the thin films were characterized by X-ray diffraction(XRD), four-point probe, Hall-effect measurement, UV-Vis spectrophotometer, and scanning electron microscopy(SEM). The effects of sputtering pressure, oxygen partial pressure and deposition temperature on properties of microstructure and optoelectronics properties of PET/ITO thin films were investigated in detail. High-quality ITO thin films on PET substrates with the resistivity as low as 8.5×10-4 Ω·cm and the optical transmittance over 80% in the visible spectrum range were obtained.
基金supported by the National Natural Science Foundation of China (Nos. 52071278, 51827801)the National Key Research and Development Program of China (No. 2018YFA0703603)。
文摘ITO （indium oxide doped with tin） thin films were deposited on glass substrates by using ITO pellet with a composition of w（In2O3）=90% and w（SnO2）=10% by electron beam evaporated with End-Hall ion source assisted without extra heating. The rate of deposition and flow rate of oxygen were measured and changed to obtain the best properties of ITO thin films. Furthermore, the post annealing process was done in vacuum at different annealing temperatures for 2 h and at 400℃ for different keeping time, respectively. The relation between optical, electrical properties and structure was discussed in detail.
基金Project(50271084)supported by the National Natural Science Foundation of China
文摘Indium-tin-oxide(ITO)films were prepared on the quarts glass by sol-gel technique.Effects of different heat treatment temperatures and cooling methods on the morphological,optical and electrical properties of ITO films were measured by TG/DTA, IR,XRD,SEM,UV-VIS spectrometer and four-probe apparatus.It is found that the crystallized ITO films exhibit a polycrystalline cubic bixbyite structure.The heat treatment process has significant effects on the morphological,optical and electrical properties of ITO films.Elevating the heat treatment temperature can perfect the crystallization process of ITO films,therefore the optical and electrical properties of ITO films are improved.But the further increasing of heat treatment temperature results in the increment of ITO films’resistivity.Compared with ITO films elaborated by furnace cooling,those prepared through air cooling have following characteristics as obviously decreased crystalline size,deeply declined porosity,more compact micro-morphology,improved electrical property and slightly decreased optical transmission.
文摘The ITO transparent conductive films were prepared on substrate of quartz glass by sol-gel method.The raw materials were nitrate indium,acetylacetone and the dopant of anhydrous chloride(SnCl4).The process from gel to crystalline film and the microstructure of the films were investigated by DTA-TG,XRD and SEM.The influence of preparation processes on the electricity performance of the films was also studied by four-probe apparatus.The results show that the crystallization process of ITO xerogel completes when the heat treatment temperature reaches 600 ℃.The ITO films possesses on vesicular structures accumulated by spherical particles,and both heat treatment temperature and cooling rate have important effects on the resistivity of ITO films.
基金This work was financially supported bythe Sichuan Outstanding Youth Foundation of China(No.04ZQ026-008).
文摘High-quality ITO films on flexible PET substrate were prepared by RF magnetron sputtering at low deposition temperature with different Ar gas sputtering pressure. Adhesion and electro-optical properties of ITO films were investigated as a function of Ar partial pressure. The sputtering conditions provide very uniform ITO films with high transparency (>85% in 400-760 nm spectra) and low electrical resistivity (1.408×10-3-1.956×10-3 Ω·cm). Scratch test experiments indicate that there is a good adhesion property between ITO films and PET substrate, the critical characteristic load increases from 16.5 to 23.2 N with increasing Ar sputtering pressure from 0.2 to 1.4 Pa.
文摘In this paper a novel A1GalnP thin-film light-emitting diode （LED） with omni-directionally reflector （ODR） and transparent conducting indium tin oxide （ITO） n-type contact structure is proposed, and fabrication process is developed. This reflector is realized with the combination of a low-refractive-index dielectric layer and a high reflectivity metal layer. This allows the light emitted or internally reflected downwardly towards the GaAs substrate at any angle of incidence to be reflected towards the top surface of the chip. ITO n-type contact is used for anti-reflection and current spreading layers on the ODR-LED with ITO. The sheet resistance of the ITO films （95 nm） deposited on n- ohmic contact of ODR-LED is of the order 23.5Ω/△ with up to 90% transmittance （above 92% for 590-770 nm） in the visible region of the spectrum. The optical and electrical characteristics of the ODR-LED with ITO are presented and compared to conventional AS-LED and ODR-LED without ITO. It is shown that the light output from the ODR-LED with ITO at forward current 20mA exceeds that of AS-LED and ODR-LED without ITO by about a factor of 1.63 and 0.16, respectively. A favourable luminous intensity of 218.3 mcd from the ODR-LED with ITO （peak wavelength 620 nm） could be obtained under 20 mA injection, which is 2.63 times and 1.21 times higher than that of AS-LED and ODR-LED without ITO, respectively.
基金supported by BEN TEN THECO.,and National Science Council,under contract 96-2622-E-152-001-CC397-2410-H-152-016
文摘A new effective tool design of three-rank form of electroremoval was present using a precision recycle system offering faster performance in removing the indium-tin-oxide(ITO) thin-films on color filter surface of displays. Higher electric power is not required since the three-rank form tool is adopted as a feeding mode to reduce the response area. The low yield of ITO persists throughout the entire semiconductor production process. By establishing a recycle process of ultra-precise removal of the thin-film nanostructure, defective products in the optoelectronic semiconductors industry can be effectively recycled, decreasing both production costs and pollution. A 5th generation TFT-LCD was used. The design features of the removal processes for the thin-films and the tool design of three-rank form were of major interest. For the precision removal processes, a pulsed current can improve the effect of dreg discharge and contributes to the achievement of a fast workpiece (displays' color filter) feed rate, but raises the current rating. High flow velocity of the electrolyte with a high rotational speed of the tool electrodes elevates the ITO removal effect. A displays' color filter with a fast feed rate is combined with enough electric power to provide highly effective removal. A small thickness of the rank and a small arc angle of the negative-electrode correspond to a higher removal rate for ITO-film. An effective three-rank form negative-electrode provides larger discharge mobility and better removal effect. It only needs a short period of time to remove the ITO easily and cleanly.
