Exchange Bias Effect in Phase Separated La0.33Pr0.34Ca0.33MnO3 Thin Films

Exchange bias effect is observed in the phase separated La0.33Pr0.34Ca0.33MnO3 thin films. High exchange bias field of about 1 kOe is achieved at 4 K. The exchange bias effect in La0.33Pr0.34Ca0.33MnO3 thin films might originate from the intrinsic phase separation of the La0.33Pr0.34Ca0.33MnO3 or surface effect. The dependence of exchange bias effect on temperature, cooling field, and thickness is also investigated. This work would open an avenue to the application in the magnetic memory devices based on the phase separated manganites.

Non-depletion floating layer in SOI LDMOS for enhancing breakdown voltage and eliminating back-gate bias effect

A non-depletion floating layer silicon-on-insulator （NFL SOI） lateral double-diffused metal–oxide–semiconductor （LDMOS） is proposed and the NFL-assisted modulated field （NFLAMF） principle is investigated in this paper. Based on this principle, the floating layer can pin the potential for modulating bulk field. In particular, the accumulated high concentration of holes at the bottom of the NFL can efficiently shield the electric field of the SOI layer and enhance the dielectric field in the buried oxide layer （BOX）. At variation of back-gate bias, the shielding charges of NFL can also eliminate back-gate effects. The simulated results indicate that the breakdown voltage （BV） is increased from 315 V to 558 V compared to the conventional reduced surface field （RESURF） SOI （CSOI） LDMOS, yielding a 77% improvement. Furthermore, due to the field shielding effect of the NFL, the device can maintain the same breakdown voltage of 558 V with a thinner BOX to resolve the thermal problem in an SOI device.

Substrate bias effects on collector resistance in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator

An analytical expression for the co/lector resistance of a novel vertical SiGe heterojunction bipolar transistor （HBT） on thin film silicon-on-insulator （SOI） is obtained with the substrate bias effects being considered. The resistance is found to decrease slowly and then quickly and to have kinks with the increase of the substrate-collector bias, which is quite different from that of a conventional bulk HBT. The model is consistent with the simulation result and the reported data and is useful to the frequency characteristic design of 0.13 μtm millimeter-wave SiGe SOI BiCMOS devices.

The Effect of Oxygen Partial Pressure during Active Layer Deposition on Bias Stability of a-InGaZnO TFTs

The effect of oxygen partial pressure （Po2） during the channel layer deposition on bias stability of amorphous indium-gallium-zinc oxide （a-IGZO） thin film transistors （TFTs） is investigated. As Po2 increases from 10% to 30%, it is found that the device shows enhanced bias stress stability with significantly reduced threshold voltage drift under positive gate bias stress. Based on the x-ray photoelectron spectroscopy measurement, the concentration of oxygen vacancies （Or） within the a-IGZO layer is suppressed by increasing Po2. Meanwhile, the low-frequency noise analysis indicates that the average trap density near the channel/dielectric interface continuously drops with increasing Po2. Therefore, the improved interface quality with increasing Po2 during the channel layer deposition can be attributed to the reduction of interface Ov-related defects, which agrees with the enhanced bias stress stability of the a-IGZO TFTs.

Spin glassy behavior and large exchange bias effect in cubic perovskite Ba0.8Sr0.2FeO3-δ

A single-phase iron oxideBa0.8Sr0.2FeO3-δwith a simple cubic perovskite structure in Pm-3 m symmetry is successfully synthesized by a solid-state reaction method in O2 flow. The oxygen content is determined to be about 2.81, indicating the formation of mixed Fe3+and Fe4+charge states with a disorder fashion. As a result, the compound shows small-polaron conductivity behavior, as well as spin glassy features arising from the competition between the ferromagnetic interaction and the antiferromagnetic interaction. Moreover, the competing interactions also give rise to a remarkable exchange bias effect in Ba0.8 Sr0.2 FeO2.81, providing an opportunity to use it in spin devices.

EFFECT OF BIAS STRESS ON NON-LINEAR INTERNAL FRICTION OF Al-Mg ALLOY

The influence of longitudinal and torsional bias stresses on anomalous amplitude-dependent internal friction was studied.The longitudinal bias stress may always weaken the anomalous amplitude-dependent effect,while the torsional one may induce different effects from differ- ent directions applied.Bias stress effect exhibits only in properly heat treated and cold worked ahoy specimens.The anomalous amplitude-dependent internal friction peaks,P_3,P_2 and P_1, are found to be related closely to slant dislocation kink chains.Thus,the application of bias stress to internal friction would be contributed to the study on dislocation structure.

Asymmetric exchange bias training effect in spin glass(FeAu)/FeNi bilayers

A significant exchange bias （EB） traimng ettect has been observea in sputter deposited FeAu/FeNi bilayers, wherein the exchange field （HE） exhibits a special sign-changeable temperature dependence. Very interestingly, despite the absence of multiple easy axes in the FeAu spin glass （SG） layer, HE drops abruptly between the first and second magnetic cycles, which is followed by a more gradual continuous change in the subsequent cycles. This training behavior cannot be described by the empirical n-1/2 law because of the asymmetric magnetization reversal processes. We propose modifying Binek＇s model to include the asymmetric changes of the pinning SG spins at the descending and ascending branches. This new model successfully describes the EB training effect in FeAu/FeNi bilayers.

Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs

The hysteresis effect in the output characteristics,originating from the floating body effect,has been measured in partially depleted（PD） silicon-on-insulator（SOI） MOSFETs at different back-gate biases.I D hysteresis has been developed to clarify the hysteresis characteristics.The fabricated devices show the positive and negative peaks in the I D hysteresis.The experimental results show that the I D hysteresis is sensitive to the back gate bias in 0.13-渭m PD SOI MOSFETs and does not vary monotonously with the back-gate bias.Based on the steady-state Shockley-Read-Hall（SRH） recombination theory,we have successfully interpreted the impact of the back-gate bias on the hysteresis effect in PD SOI MOSFETs.

Bias Effects on the Reynolds Stress Using the Multi-Purpose Probe in IR-T1 Tokamak

The effect of the positive bias on Reynolds stress （RS） and its effect on the radial turbulent transport at the edge plasma （r/a =0.9） and scrape-off layer （SOL） region of plasma in tokamak are investigated. The radial and poloidal electric fields （Sr, Ep） and ion saturation current （Is） are measured by multi-purpose probe （MPP）. This probe is fabricated and constructed for the first time in the IR-T1 tokamak. The most advantage of this probe is that the variations of Er and Ep can be measured in different radii at the single shot. Thus the information of different radii can be compared with high precision. The bias voltage is fixed at Vbias = 200 V and it has been applied with the limiter bias that is fixed in r/a = 0.9. Moreover, the phase difference between radial and poloidal electric fields, and temporal evolution of the RS .spectrum detected by MPP are calculated. RS magnitude on the edge （r/a = 0.9） is more than its value in the SOL （r/a = 1.02）. With the applied bias 200 V, ItS and the magnitude of the phase difference between Er and Ep are increased, while the radial turbulent transport is decreased simultaneously. Thus it can be concluded that RS affects radial turbulence. Temporal evolution of the RS spectrum shows that the frequency of RS is increased and reaches its highest value at r/a=0.9 in the presence of bias.

Methodological challenges to control for immortal time bias in addressing drug effects in type 2 diabetes

There are multiple biases in using observational studies to examine treatment effects such as those from prevalent drug users, immortal time and drug indications. We used renin angiotensin system(RAS) inhibitors and statins as reference drugs with proven efficacies in randomized clinical trials(RCTs) and examined their effectiveness in the prospective Hong Kong Diabetes Registry using adjustment methods proposed in the literature. Using time-dependent exposures to drug treatments yielded greatly inflated hazard ratios(HR) regarding the treatment effects of these drugs for cardiovascular disease(CVD) in type 2 diabetes. These errors were probably due to changing indications to use these drugs during follow up periods, especially at the time of drug commencement making time-dependent analysis extremely problematic. Using time-fixed analysis with exclusion of immortal time and adjustment for confounders at baseline and/or during follow-up periods, the HR of RAS inhibitors for CVD was comparable to that in RCT. The result supported the use of the Registry for performing pharmacoepidemiological analysis which revealed an attenuated low low-density lipoprotein cholesterol related cancer risk with RAS inhibitors. On the other hand, time-fixed analysis with including immortal time and adjustment for confounders at baseline and/or during follow-up periods, the HR of statins for CVD was similar to that in the RCT. Our results highlight the complexity and difficulty in removing these biases. We call for validations of the methods to cope with immortal time and drug use indications before applying them to particular research questions, so to avoid making erroneous conclusions.

Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65 nm NMOSFETs

The bias dependence of radiation-induced narrow-width channel effects（RINCEs） in 65-nm n-type metal-oxidesemiconductor field-effect transistors（NMOSFETs） is investigated. The threshold voltage of the narrow-width65 nm NMOSFET is negatively shifted by total ionizing dose irradiation, due to the RINCE. The experimental results show that the 65 nm narrow-channel NMOSFET has a larger threshold shift when the gate terminal is kept in the ground, which is contrary to the conclusion obtained in the old generation devices. Depending on the three-dimensional simulation, we conclude that electric field distribution alteration caused by shallow trench isolation scaling is responsible for the anomalous RINCE bias dependence in 65 nm technology.

Martensitic transformation and related magnetic effects in Ni-Mn-based ferromagnetic shape memory alloys

Ferromagnetic shape memory alloys, which undergo the martensitic transformation, are famous multifunctional materials. They exhibit many interesting magnetic properties around the martensitic transformation temperature due to the strong coupling between magnetism and structure. Tuning magnetic phase transition and optimizing the magnetic effects in these alloys are of great importance. In this paper, the regulation of martensitic transformation and the investigation of some related magnetic effects in Ni–Mn-based alloys are reviewed based on our recent research results.

Spatial-temporal Heterogeneity of Industrial Structure Transformation and Carbon Emission Effects in Xuzhou Metropolitan Area

Employing decoupling index and industrial structure characteristic bias index methods, this study analyzed the spatial-temporal characteristics of industrial structure transformations and their resulting carbon emissions in the Xuzhou Metropolitan Area from 2000 to 2014, with a focus on their relationships and driving factors. Our research indicates that carbon emission intensity from industrial structures in the Xuzhou Metropolitan Area at first showed an increasing trend, which then decreased. Furthermore, the relationship between emissions and industrial economic growth has been trending toward absolute decoupling. From the perspective of the center-periphery, the Xuzhou Metropolitan Area formed a concentric pattern, where both progress towards low emissions and the level of technological advancement gradually diminished from the center to the periphery. In terms of variation across provinces, the ISCB index in the eastern Henan has decreased the slowest, followed by the southern Shandong and the northern Anhui, with the northern Jiangsu ranking last. During this period, resource-and labor-intensive industries were the primary growth industries in the northern Anhui and the eastern Henan, while labor-intensive industries dominated the southern Shandong and capital-intensive industries dominated the northern Jiangsu. In terms of city types, the spatial pattern for industrial structure indicates that recession resource-based cities had higher carbon emission intensities than mature resource-based cities, followed by non-resource-based cities and regenerative resource-based cities. Generally, the industrial structure in the Xuzhou Metropolitan Area has transformed from being resource-intensive to capital-intensive, and has been trending toward technology-intensive as resource availability has been exploited to exhaustion and then been regenerated. Industrial structure has been the leading factor causing heterogeneity of carbon emission intensities between metropolitan cities. Therefore, the key to optimizing the industrial structure and layout of metropolitan areas is to promote industrial structure transformation and improve the system controlling collaborative industrial development between cities.

Effect of power parameters on microdischarge induced by corona discharge

This research mainly describes the generation and diagnosis of plasma using a wire-plate discharge device driven by different power supplies, aimed at investigating the effect of driving source parameters on micro-discharge induced by a corona. The influence of parameters such as waveform, duty ratio and bias voltage on discharge characteristics was explored preliminarily.Experiment results show that the determination of volt-ampere characteristics under different driving source waveforms indicates that the application of square and pulse waveforms shows great advantages over that of sawtooth and sinusoidal waveforms. Similarly, the photo-thermal effects of the system were investigated by comparing the high-voltage electrode temperature and relative emission intensity of N2(C3Пu → B3Пg, 0–0, 337 nm), where square and pulse waveforms also achieved better performance. But the pulse waveform had a slight advantage over the square waveform in terms of energy conversion. Further, investigations of the duty ratio and bias voltage applied on the pulse waveform were conducted, and the results indicate that the duty ratio could effectively improve the discharge power and thermal effect to a certain extent;however, the application of bias voltage on the pulse signal had little influence on the discharge power and thermal effect.

Bias-induced reconstruction of hybrid interface states in magnetic molecular junctions

Based on first-principles calculations,the bias-induced evolutions of hybrid interface states inπ-conjugated tricene and in insulating octane magnetic molecular junctions are investigated.Obvious bias-induced splitting and energy shift of the spin-resolved hybrid interface states are observed in the two junctions.The recombination of the shifted hybrid interface states from different interfaces makes the spin polarization around the Fermi energy strongly bias-dependent.The transport calculations demonstrate that in theπ-conjugated tricene junction,the bias-dependent hybrid interface states work efficiently for large current,current spin polarization,and distinct tunneling magnetoresistance.But in the insulating octane junction,the spin-dependent transport via the hybrid interface states is inhibited,which is only slightly disturbed by the bias.This work reveals the phenomenon of bias-induced reconstruction of hybrid interface states in molecular spinterface devices,and the underlying role of conjugated molecular orbitals in the transport ability of hybrid interface states.

Body Bias Dependence of Bias Temperature Instability(BTI)in Bulk FinFET Technology

In this article,the body bias dependence of the bias temperature instability(BTI)in bulk FinFETs is experimentally studied,under different test conditions for the first time.In contrast to the traditional understanding that changing body bias has little impact on BTI degradation in FinFETs due to its weak body effect,it is observed that it actually has non-negligible impacts.And a forward body bias(FBB)can reduce the BTI degradation in FinFETs,which is opposite with the trend in planar devices.The underlying physics is found due to the trade-off between two competing factors.The results are helpful for understanding and modeling reliability in FinFETs.

Age Related Changes in Attentional Bias Triggered by Gaze Cues

We investigated if attentional bias directed to the right increased with age. We assessed the characteristics of the following types of eye-gaze by using the Posner cueing paradigm. Younger (n =16) and older (n = 20) adults participated in this study. First of all, a face which looked straight ahead was presented at the center of screen, followed by a gaze cue that looked left or right. Immediately after this informative cue, a target stimulus (“*”) appeared to the left or right of the face. The stimulus-onset asynchrony (SOA) between the cue and the target was selected from 300, 700, and 1100 ms. Participants were required to judge whether the target appeared to the left or the right of the gaze cue as quickly and accurately as possible. Results showed that older adults indicate a larger positive gaze-cueing effect when the eye-gaze shifted rightward, whereas this effect was not observed for a leftward shift. Moreover, a negative gaze-cueing effect (inhibition of return) was observed when the SOA was longer only for the leftward eye-gaze shift of older adults. These modulations of the cueing effect did not appear in younger adults. These findings demonstrate that the rightward attentional bias in older adults is more robust than the leftward bias.

How Cognitive Biases Make Innovation Difficult in Markets for Fast Moving Consumer Goods

Biases affect our judgments and decisions everywhere,because in our daily life,no matter where you are,what kind of occupation you are doing,every decision we make is more or less interfered by cognitive biases,which even determines the outcome of things.In addition,with the development of the times,the progress of science and technology,and the change of social structure,we have experienced too many processes from rejection to acceptance,from stubbornness to change.However,it often takes time;especially in the commercial field,the timing when users accept products can better reflect this point.This article mainly aims at these phenomena,through the information,examples and data from the online sources,to explore how four kinds of cognitive biases:status quo bias,loss aversion bias,mere-exposure effect,and bounded-rationality that affect the smooth progress of innovation products in the fast consumer market,and how these biases can attack the confidence of merchants,so that the originally widely favored products will eventually end in failure.At the end of the article will also discuss the heuristics that can deal with the biases.

Three-dimensional Monte Carlo simulation of bulk fin field effect transistor

In this paper, we investigate the performance of the bulk fin field effect transistor （FinFET） through a three- dimensional （3D） full band Monte Carlo simulator with quantum correction. Several scattering mechanisms, such as the acoustic and optical phonon scattering, the ionized impurity scattering, the impact ionization scattering and the surface roughness scattering are considered in our simulator. The effects of the substrate bias and the surface roughness scattering near the Si/SiO2 interface on the performance of bulk FinFET are mainly discussed in our work. Our results show that the on-current of bulk FinFET is sensitive to the surface roughness and that we can reduce the substrate leakage current by modulating the substrate bias voltage.

基于主成分分析探讨偏颇体质在乳腺癌患者焦虑抑郁共病中的作用

目的:于乳腺癌患者群体中探讨偏颇体质在焦虑形成抑郁过程中的中介作用。方法:应用自制量表、中医体质量表(constitution in Chinese medicine questionnaire,CCMQ)和医院焦虑抑郁量表(hospital anxiety and depression scale,HADS)对2019年7月—2021年5月选取于云南省肿瘤医院并符合纳排标准的患者进行基本信息采集、中医体质评价及焦虑抑郁状况评定。在数据标准化的基础上,对所获偏颇体质得分进行主成分分析,再进一步通过Pearson相关分析、多元线性回归模型及Bootstrap法探讨偏颇体质得分的中介作用。结果:回收有效问卷950份,有效回收率90.65%。950例患者中存在焦虑或抑郁的患者共398例,其中283例(71.11%)属于焦虑抑郁共病。8种偏颇体质得分降维后获得一个主成分“偏颇体质得分”,特征值>1,方差贡献率为80.13%。将其纳入Pearson相关分析后得出,偏颇体质得分与焦虑得分、抑郁得分均呈正相关(r=0.688,0.643,P<0.001),焦虑得分与抑郁得分呈正相关(r=0.860,P<0.001)。偏颇体质在焦虑与抑郁发生间起部分中介作用,中介效应量为0.063,总效应量为0.063+0.784=0.847,中介效应占总效应的7.44%。结论:对焦虑患者的偏颇体质进行纠正治疗,可在一定程度上预防抑郁的发生,从而减少乳腺癌患者焦虑抑郁共病的发生率,改善其心理健康及远期预后。