lnA1N/GaN high-electron-mobility transistors （HEMTs） on SiC substrate were fabricated and character- ized. Several techniques, consisting of high electron density, 70 nm T-shaped gate, low ohmic contacts and a short...lnA1N/GaN high-electron-mobility transistors （HEMTs） on SiC substrate were fabricated and character- ized. Several techniques, consisting of high electron density, 70 nm T-shaped gate, low ohmic contacts and a short drain-source distance, are integrated to gain high device performance. The fabricated InA1N/GaN HEMTs exhibit a maximum drain saturation current density of 1.65 A/ram at Vgs = 1 V and a maximum peak transconductance of 382 mS/rnm. In addition, a unity current gain cut-off frequency （fT） of 162 GHz and a maximum oscillation frequency （fmax） of 176 GHz are achieved on the devices with the 70 nm gate length.展开更多
We report an enhancement-mode InA1N/GaN HEMT using a fluorine plasma treatment. The threshold voltage was measured to be ＋0.86 V by linear extrapolation from the transfer characteristics. The transconductance is 0 mS...We report an enhancement-mode InA1N/GaN HEMT using a fluorine plasma treatment. The threshold voltage was measured to be ＋0.86 V by linear extrapolation from the transfer characteristics. The transconductance is 0 mS/mm at Vc, s = 0 V and VDS = 5 V, which shows a truly normal-offstate. The gate leakage current density of the enhancement-mode device shows two orders of magnitude lower than that of the depletion-mode device. The transfer characteristics of the E-mode InA1N/GaN HEMT at room temperature and high temperature are reported. The current gain cut-off frequency （fT） and the maximum oscillation frequency （fmax） of the enhancement-mode device with a gate length of 0.3 #m were 29.4 GHz and 37.6 GHz respectively, which is comparable with the depletion-mode device. A classical 16 elements small-signal model was deduced to describe the parasitic and the intrinsic parameters of the device.展开更多
We report high performance InA1N/GaN HEMTs grown on sapphire substrates. The lattice-matched InA1N/GaN HEMT sample showed a high 2DEG mobility of 1210 cmZ/（V.s） under a sheet density of 2.6 × 10^13 cm^-2. Large...We report high performance InA1N/GaN HEMTs grown on sapphire substrates. The lattice-matched InA1N/GaN HEMT sample showed a high 2DEG mobility of 1210 cmZ/（V.s） under a sheet density of 2.6 × 10^13 cm^-2. Large signal load-pull measurements for a （2 × 100 μm） x 0.25 μm device have been conducted with a drain voltage of 24 V at 10 GHz. The presented results confirm the high performances reachable by InAIN- based technology with an output power density of 4.69 W/ram, a linear gain of 11.8 dB and a peak power-added efficiency of 48%. This is the first report of high performance InA1N/GaN HEMTs in China's Mainland.展开更多
InA1N/GaN high-electron mobility transistors （HEMTs） with a gate length of 100 nm and oxygen plasma treatment were fabricated. A Si/Ti/A1/Ni/Au ohmic contact was also used to reduce the contact resistance. DC and RF...InA1N/GaN high-electron mobility transistors （HEMTs） with a gate length of 100 nm and oxygen plasma treatment were fabricated. A Si/Ti/A1/Ni/Au ohmic contact was also used to reduce the contact resistance. DC and RF characteristics of the devices were measured. The fabricated devices show a maximum drain current density of 2.18 A/mm at VGs = 2 V, a low on-resistance （Ron） of 1.49 x2.mm and low gate leakage current. An excellent frequency response was also obtained. The current cut-off frequency （fT） is 81 GHz and the maximum oscillation frequency is 138 GHz, respectively.展开更多
The testing techniques and experimental methods of the 60Co gamma irradiation effect on A1GaN/A1N/ GaN high electron mobility transistors （HEMTs） are established. The degradation of the electrical properties of the ...The testing techniques and experimental methods of the 60Co gamma irradiation effect on A1GaN/A1N/ GaN high electron mobility transistors （HEMTs） are established. The degradation of the electrical properties of the device under the actual radiation environment are analyzed theoretically, and studies of the total dose effects of gamma radiation on A1GaN/A1N/GaN HEMTs at three different radiation bias conditions are carried out. The degradation patterns of the main parameters of the A1GaN/A1N/GaN HEMTs at different doses are then investigated, and the device parameters that were sensitive to the gamma radiation induced damage and the total dose level induced device damage are obtained.展开更多
A new surface-potential-based model for A1GaN/A1N/GaN high electron mobility transistor （HEMT） is proposed in this paper. Since the high polarization effects caused by AlN interlayer favorably influence the two dime...A new surface-potential-based model for A1GaN/A1N/GaN high electron mobility transistor （HEMT） is proposed in this paper. Since the high polarization effects caused by AlN interlayer favorably influence the two dimensional electron gas （2DEG） and scattering mechanisms, we first add spontaneous and piezoelectric charge terms to the source equation of surface-potential, and a mobility model for A1GaN/A1N/GaN HEMT is rewritten. Compared with TCAD simulations, the DC characteristics of A1GaN/AIN/GaN HEMT are faithfully reproduced by the new model.展开更多
基金supported by the National Natural Science Foundation of China(No.61306113)
文摘lnA1N/GaN high-electron-mobility transistors （HEMTs） on SiC substrate were fabricated and character- ized. Several techniques, consisting of high electron density, 70 nm T-shaped gate, low ohmic contacts and a short drain-source distance, are integrated to gain high device performance. The fabricated InA1N/GaN HEMTs exhibit a maximum drain saturation current density of 1.65 A/ram at Vgs = 1 V and a maximum peak transconductance of 382 mS/rnm. In addition, a unity current gain cut-off frequency （fT） of 162 GHz and a maximum oscillation frequency （fmax） of 176 GHz are achieved on the devices with the 70 nm gate length.
文摘We report an enhancement-mode InA1N/GaN HEMT using a fluorine plasma treatment. The threshold voltage was measured to be ＋0.86 V by linear extrapolation from the transfer characteristics. The transconductance is 0 mS/mm at Vc, s = 0 V and VDS = 5 V, which shows a truly normal-offstate. The gate leakage current density of the enhancement-mode device shows two orders of magnitude lower than that of the depletion-mode device. The transfer characteristics of the E-mode InA1N/GaN HEMT at room temperature and high temperature are reported. The current gain cut-off frequency （fT） and the maximum oscillation frequency （fmax） of the enhancement-mode device with a gate length of 0.3 #m were 29.4 GHz and 37.6 GHz respectively, which is comparable with the depletion-mode device. A classical 16 elements small-signal model was deduced to describe the parasitic and the intrinsic parameters of the device.
基金Project supported by the National Natural Science Foundation of China(Nos.60890192,60876009).
文摘We report high performance InA1N/GaN HEMTs grown on sapphire substrates. The lattice-matched InA1N/GaN HEMT sample showed a high 2DEG mobility of 1210 cmZ/（V.s） under a sheet density of 2.6 × 10^13 cm^-2. Large signal load-pull measurements for a （2 × 100 μm） x 0.25 μm device have been conducted with a drain voltage of 24 V at 10 GHz. The presented results confirm the high performances reachable by InAIN- based technology with an output power density of 4.69 W/ram, a linear gain of 11.8 dB and a peak power-added efficiency of 48%. This is the first report of high performance InA1N/GaN HEMTs in China's Mainland.
基金supported by the National Natural Science Foundation of China(No.61306113)
文摘InA1N/GaN high-electron mobility transistors （HEMTs） with a gate length of 100 nm and oxygen plasma treatment were fabricated. A Si/Ti/A1/Ni/Au ohmic contact was also used to reduce the contact resistance. DC and RF characteristics of the devices were measured. The fabricated devices show a maximum drain current density of 2.18 A/mm at VGs = 2 V, a low on-resistance （Ron） of 1.49 x2.mm and low gate leakage current. An excellent frequency response was also obtained. The current cut-off frequency （fT） is 81 GHz and the maximum oscillation frequency is 138 GHz, respectively.
文摘The testing techniques and experimental methods of the 60Co gamma irradiation effect on A1GaN/A1N/ GaN high electron mobility transistors （HEMTs） are established. The degradation of the electrical properties of the device under the actual radiation environment are analyzed theoretically, and studies of the total dose effects of gamma radiation on A1GaN/A1N/GaN HEMTs at three different radiation bias conditions are carried out. The degradation patterns of the main parameters of the A1GaN/A1N/GaN HEMTs at different doses are then investigated, and the device parameters that were sensitive to the gamma radiation induced damage and the total dose level induced device damage are obtained.
基金supported by the Major State Basic Research Development Program of China(No.2010CB327403)the Zhejiang Provincial Key Science and Technology Innovation Team(No.Gk110908002)the National Science Foundation of China(No.61102027)
文摘A new surface-potential-based model for A1GaN/A1N/GaN high electron mobility transistor （HEMT） is proposed in this paper. Since the high polarization effects caused by AlN interlayer favorably influence the two dimensional electron gas （2DEG） and scattering mechanisms, we first add spontaneous and piezoelectric charge terms to the source equation of surface-potential, and a mobility model for A1GaN/A1N/GaN HEMT is rewritten. Compared with TCAD simulations, the DC characteristics of A1GaN/AIN/GaN HEMT are faithfully reproduced by the new model.
