Improved radio-frequency(RF)power performance of InAlN/GaN high electron mobility transistor(HEMT)is achieved by optimizing the rapid thermal annealing(RTA)process for high-performance low-voltage terminal application...Improved radio-frequency(RF)power performance of InAlN/GaN high electron mobility transistor(HEMT)is achieved by optimizing the rapid thermal annealing(RTA)process for high-performance low-voltage terminal applications.By optimizing the RTA temperature and time,the optimal annealing condition is found to enable low parasitic resistance and thus a high-performance device.Besides,compared with the non-optimized RTA HEMT,the optimized one demonstrates smoother ohmic metal surface morphology and better heterojunction quality including the less degraded heterojunction sheet resistance and clearer heterojunction interfaces as well as negligible material out-diffusion from the barrier to the channel and buffer.Benefiting from the lowered parasitic resistance,improved maximum output current density of 2279 mA·mm^(-1)and higher peak extrinsic transconductance of 526 mS·mm^(-1)are obtained for the optimized RTA HEMT.In addition,due to the superior heterojunction quality,the optimized HEMT shows reduced off-state leakage current of 7×10^(-3)mA·mm^(-1)and suppressed current collapse of only 4%,compared with those of 1×10^(-1)mA·mm^(-1)and 15%for the non-optimized one.At 8 GHz and V_(DS)of 6 V,a significantly improved power-added efficiency of 62%and output power density of 0.71 W·mm^(-1)are achieved for the optimized HEMT,as the result of the improvement in output current,knee voltage,off-state leakage current,and current collapse,which reveals the tremendous advantage of the optimized RTA HEMT in high-performance low-voltage terminal applications.展开更多
This paper studied the low-resistance ohmic contacts on InAlN/GaN with metal–organic chemical vapor deposition(MOCVD)regrowth technique.The 150-nm regrown n-InGaN exhibits a low sheet resistance of 31Ω/□,resulting ...This paper studied the low-resistance ohmic contacts on InAlN/GaN with metal–organic chemical vapor deposition(MOCVD)regrowth technique.The 150-nm regrown n-InGaN exhibits a low sheet resistance of 31Ω/□,resulting in an extremely low contact resistance of 0.102Ω·mm between n^(+)-InGaN and InAlN/GaN channels.Mask-free regrowth process was also used to significantly improve the sheet resistance of InAlN/GaN with MOCVD regrown ohmic contacts.Then,the diffusion mechanism between n^(+)-InGaN and InAlN during regrowth process was investigated with electrical and structural characterizations,which could benefit the further process optimization.展开更多
A high performance InAlN/GaN high electron mobility transistor(HEMT)at low voltage operation(6-10 V drain voltage)has been fabricated.An 8 nm InAlN barrier layer is adopted to generate large 2DEG density thus to reduc...A high performance InAlN/GaN high electron mobility transistor(HEMT)at low voltage operation(6-10 V drain voltage)has been fabricated.An 8 nm InAlN barrier layer is adopted to generate large 2DEG density thus to reduce sheet resistance.Highly scaled lateral dimension(1.2μm source-drain spacing)is to reduce access resistance.Both low sheet resistance of the InAlN/GaN structure and scaled lateral dimension contribute to an high extrinsic transconductance of 550 mS/mm and a large drain current of 2.3 A/mm with low on-resistance(Ron)of 0.9Ω·mm.Small signal measurement shows an fT/fmax of 131 GHz/196 GHz.Large signal measurement shows that the InAlN/GaN HEMT can yield 64.7%-52.7%(Vds=6-10 V)power added efficiency(PAE)associated with 1.6-2.4 W/mm output power density at 8 GHz.These results demonstrate that GaN-based HEMTs not only have advantages in the existing high voltage power and high frequency rf field,but also are attractive for low voltage mobile compatible rf applications.展开更多
In this work, we use a 3-nm-thick Al0.64In0.36N back-barrier layer in In0.17Al0.83N/GaN high-electron mobility transistor （HEMT） to enhance electron confinement. Based on two-dimensional device simulations, the infl...In this work, we use a 3-nm-thick Al0.64In0.36N back-barrier layer in In0.17Al0.83N/GaN high-electron mobility transistor （HEMT） to enhance electron confinement. Based on two-dimensional device simulations, the influences of Al0.64In0.36N back-barrier on the direct-current （DC） and radio-frequency （RF） characteristics of InAlN/GaN HEMT are investigated, theoretically. It is shown that an effective conduction band discontinuity of approximately 0.5 eV is created by the 3-nm-thick Al0.64In0.36N back-barrier and no parasitic electron channel is formed. Comparing with the conventional InAlN/GaN HEMT, the electron confinement of the back-barrier HEMT is significantly improved, which allows a good immunity to short-channel effect （SCE） for gate length decreasing down to 60 nm （9-nm top barrier）. For a 70-nm gate length, the peak current gain cut-off frequency （fT） and power gain cut-off frequency （fmax） of the back-barrier HEMT are 172 GHz and 217 GHz, respectively, which are higher than those of the conventional HEMT with the same gate length.展开更多
In the framework of effective mass approximation, we theoretically investigate the electronic structure of the Si δ-doped InAIN/GaN single quantum well by solving numerically the coupled equations Schrodinger-Poisson...In the framework of effective mass approximation, we theoretically investigate the electronic structure of the Si δ-doped InAIN/GaN single quantum well by solving numerically the coupled equations Schrodinger-Poisson self-consistently. The linear, nonlinear optical absorption coefficients and relative refractive index changes are calculated as functions of the doping concentration and its thickness. The obtained results show that the position and the amplitude of the linear and total optical absorption coefficients and the refractive index changes can be modified by varying the doping concentration and its thickness. In addition, it is found that the maximum of the optical absorption can be red-shifted or blue-shifted by varying the doping concentration. The obtained results are important for the design of various electronic components such as high-power FETs and infrared photonic devices.展开更多
基金Project supported by the National Key Research and Development Project of China (Grant No.2021YFB3602404)part by the National Natural Science Foundation of China (Grant Nos.61904135 and 62234009)+4 种基金the Key R&D Program of Guangzhou (Grant No.202103020002)Wuhu and Xidian University special fund for industry-university-research cooperation (Grant No.XWYCXY-012021014-HT)the Fundamental Research Funds for the Central Universities (Grant No.XJS221110)the Natural Science Foundation of Shaanxi,China (Grant No.2022JM-377)the Innovation Fund of Xidian University (Grant No.YJSJ23019)。
文摘Improved radio-frequency(RF)power performance of InAlN/GaN high electron mobility transistor(HEMT)is achieved by optimizing the rapid thermal annealing(RTA)process for high-performance low-voltage terminal applications.By optimizing the RTA temperature and time,the optimal annealing condition is found to enable low parasitic resistance and thus a high-performance device.Besides,compared with the non-optimized RTA HEMT,the optimized one demonstrates smoother ohmic metal surface morphology and better heterojunction quality including the less degraded heterojunction sheet resistance and clearer heterojunction interfaces as well as negligible material out-diffusion from the barrier to the channel and buffer.Benefiting from the lowered parasitic resistance,improved maximum output current density of 2279 mA·mm^(-1)and higher peak extrinsic transconductance of 526 mS·mm^(-1)are obtained for the optimized RTA HEMT.In addition,due to the superior heterojunction quality,the optimized HEMT shows reduced off-state leakage current of 7×10^(-3)mA·mm^(-1)and suppressed current collapse of only 4%,compared with those of 1×10^(-1)mA·mm^(-1)and 15%for the non-optimized one.At 8 GHz and V_(DS)of 6 V,a significantly improved power-added efficiency of 62%and output power density of 0.71 W·mm^(-1)are achieved for the optimized HEMT,as the result of the improvement in output current,knee voltage,off-state leakage current,and current collapse,which reveals the tremendous advantage of the optimized RTA HEMT in high-performance low-voltage terminal applications.
基金the Fundamental Research Funds for the National Key Research and Development Project of China(Grant No.2020YFB1807403)the National Natural Science Foundation of China(Grant Nos.62174125 and 62131014)+1 种基金the Fundamental Research Funds for the Central Universities(Grant Nos.QTZX22022 and YJS2213)the Innovation Fund of Xidian University.
文摘This paper studied the low-resistance ohmic contacts on InAlN/GaN with metal–organic chemical vapor deposition(MOCVD)regrowth technique.The 150-nm regrown n-InGaN exhibits a low sheet resistance of 31Ω/□,resulting in an extremely low contact resistance of 0.102Ω·mm between n^(+)-InGaN and InAlN/GaN channels.Mask-free regrowth process was also used to significantly improve the sheet resistance of InAlN/GaN with MOCVD regrown ohmic contacts.Then,the diffusion mechanism between n^(+)-InGaN and InAlN during regrowth process was investigated with electrical and structural characterizations,which could benefit the further process optimization.
基金Project supported by the China Postdoctoral Science Foundation(Grant No.2018M640957)the Fundamental Research Funds for the Central Universities,China(Grant No.20101196761)+2 种基金the National Natural Science Foundation of China(Grant No.61904135)the National Defense Pre-Research Foundation of China(Grant No.31513020307)the Natural Science Foundation of Shaanxi Province of China(Grant No.2020JQ-316).
文摘A high performance InAlN/GaN high electron mobility transistor(HEMT)at low voltage operation(6-10 V drain voltage)has been fabricated.An 8 nm InAlN barrier layer is adopted to generate large 2DEG density thus to reduce sheet resistance.Highly scaled lateral dimension(1.2μm source-drain spacing)is to reduce access resistance.Both low sheet resistance of the InAlN/GaN structure and scaled lateral dimension contribute to an high extrinsic transconductance of 550 mS/mm and a large drain current of 2.3 A/mm with low on-resistance(Ron)of 0.9Ω·mm.Small signal measurement shows an fT/fmax of 131 GHz/196 GHz.Large signal measurement shows that the InAlN/GaN HEMT can yield 64.7%-52.7%(Vds=6-10 V)power added efficiency(PAE)associated with 1.6-2.4 W/mm output power density at 8 GHz.These results demonstrate that GaN-based HEMTs not only have advantages in the existing high voltage power and high frequency rf field,but also are attractive for low voltage mobile compatible rf applications.
基金supported by the Natural Science Foundation of Hebei Province,China(Grant No.F2013202256)
文摘In this work, we use a 3-nm-thick Al0.64In0.36N back-barrier layer in In0.17Al0.83N/GaN high-electron mobility transistor （HEMT） to enhance electron confinement. Based on two-dimensional device simulations, the influences of Al0.64In0.36N back-barrier on the direct-current （DC） and radio-frequency （RF） characteristics of InAlN/GaN HEMT are investigated, theoretically. It is shown that an effective conduction band discontinuity of approximately 0.5 eV is created by the 3-nm-thick Al0.64In0.36N back-barrier and no parasitic electron channel is formed. Comparing with the conventional InAlN/GaN HEMT, the electron confinement of the back-barrier HEMT is significantly improved, which allows a good immunity to short-channel effect （SCE） for gate length decreasing down to 60 nm （9-nm top barrier）. For a 70-nm gate length, the peak current gain cut-off frequency （fT） and power gain cut-off frequency （fmax） of the back-barrier HEMT are 172 GHz and 217 GHz, respectively, which are higher than those of the conventional HEMT with the same gate length.
基金Supported by the Deanship of Scientific Research of University of Dammam under Grant No 2015134
文摘In the framework of effective mass approximation, we theoretically investigate the electronic structure of the Si δ-doped InAIN/GaN single quantum well by solving numerically the coupled equations Schrodinger-Poisson self-consistently. The linear, nonlinear optical absorption coefficients and relative refractive index changes are calculated as functions of the doping concentration and its thickness. The obtained results show that the position and the amplitude of the linear and total optical absorption coefficients and the refractive index changes can be modified by varying the doping concentration and its thickness. In addition, it is found that the maximum of the optical absorption can be red-shifted or blue-shifted by varying the doping concentration. The obtained results are important for the design of various electronic components such as high-power FETs and infrared photonic devices.
