The 808-nm vertical cavity surface emitting laser(VCSEL) with strained In_(0.13)Ga_(0.75)Al_(0.12)As/Al_(0.3)Ga_(0.7)As quantum wells is designed and fabricated. Compared with the VCSELs with Al_(0.05)Ga_(0.95)As/Al_(...The 808-nm vertical cavity surface emitting laser(VCSEL) with strained In_(0.13)Ga_(0.75)Al_(0.12)As/Al_(0.3)Ga_(0.7)As quantum wells is designed and fabricated. Compared with the VCSELs with Al_(0.05)Ga_(0.95)As/Al_(0.3)Ga_(0.7)As quantum wells, the VCSEL with strained In_(0.13)Ga_(0.75)Al_(0.12)As/Al_(0.3)Ga_(0.7)As quantum wells is demonstrated to possess higher power conversion efficiency(PCE) and better temperature stability. The maximum PCE of 43.8% for 10-μm VCSEL is achieved at an ambient temperature of 30°C. The size-dependent thermal characteristics are also analyzed by characterizing the spectral power and output power. It demonstrates that small oxide-aperture VCSELs are advantageous for temperature-stable performance.展开更多
The 810-nm InGaAlAs/AlGaAs double quantum well （QW） semiconductor lasers with asymmetric waveguide structures, grown by molecular beam epitaxy, show high quantum efficiency and high-power conver- sion efficiency at ...The 810-nm InGaAlAs/AlGaAs double quantum well （QW） semiconductor lasers with asymmetric waveguide structures, grown by molecular beam epitaxy, show high quantum efficiency and high-power conver- sion efficiency at continuous-wave （CW） power output. The threshold current density and slope efficiency of the device are 180 A/cm^2 and 1.3 W/A, respectively. The internal loss and the internal quantum efficiency are 1.7 cm^-1 and 93%, respectively. The 70% maximum power conversion efficiency is achieved with narrow far-field patterns.展开更多
The growth of the InAs film directly on the Si substrate deflected from the plane(100) at 4° towards(110) has been performed using a two-step procedure. The effect of the growth and annealing temperature on the e...The growth of the InAs film directly on the Si substrate deflected from the plane(100) at 4° towards(110) has been performed using a two-step procedure. The effect of the growth and annealing temperature on the electron mobility and surface topography has been investigated for a set of samples. The results show that the highest electron mobility is4640 cm^2/V·s in the sample, in which the 10-nm InAs nucleation layer is grown at a low temperature of 320 ℃ followed by ramping up to 560 ℃, and the nucleation layer was annealed for 15 min and the second layer of InAs is grown at 520 ℃.The influence of different buffer layers on the electron mobility of the samples has also been investigated, which shows that the highest electron mobility of 9222 cm^2/V·s at 300 K is obtained in the sample grown on a thick and linearly graded InGaAlAs metamorphic buffer layer deposited at 420 ℃.展开更多
Usually GaAs/AlGaAs is utilized as an active layer material in laser diodes operating in the spectral range of 800- 850 nm. In this work, in addition to a traditional unstrained GaAs/AlGaAs distributed feedback （DFB...Usually GaAs/AlGaAs is utilized as an active layer material in laser diodes operating in the spectral range of 800- 850 nm. In this work, in addition to a traditional unstrained GaAs/AlGaAs distributed feedback （DFB） laser diode, a compressively strained InGaAlAs/AlGaAs DFB laser diode is numerically investigated in characteristic. The simulation results show that the compressively strained DFB laser diode has a lower transparency carrier density, higher gain, lower Auger recombination rate, and higher stimulated recombination rate, which lead to better a device performance, than the traditional unstrained GaAs/AlGaAs DFB laser diode.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant No. 61804175)the Key Research Program of Frontier Sciences, Chinese Academy of Sciences (Grant No. ZDBS-LY-JSC031)the China Postdoctoral Science Foundation (Grant No. BX20200358)。
文摘The 808-nm vertical cavity surface emitting laser(VCSEL) with strained In_(0.13)Ga_(0.75)Al_(0.12)As/Al_(0.3)Ga_(0.7)As quantum wells is designed and fabricated. Compared with the VCSELs with Al_(0.05)Ga_(0.95)As/Al_(0.3)Ga_(0.7)As quantum wells, the VCSEL with strained In_(0.13)Ga_(0.75)Al_(0.12)As/Al_(0.3)Ga_(0.7)As quantum wells is demonstrated to possess higher power conversion efficiency(PCE) and better temperature stability. The maximum PCE of 43.8% for 10-μm VCSEL is achieved at an ambient temperature of 30°C. The size-dependent thermal characteristics are also analyzed by characterizing the spectral power and output power. It demonstrates that small oxide-aperture VCSELs are advantageous for temperature-stable performance.
文摘The 810-nm InGaAlAs/AlGaAs double quantum well （QW） semiconductor lasers with asymmetric waveguide structures, grown by molecular beam epitaxy, show high quantum efficiency and high-power conver- sion efficiency at continuous-wave （CW） power output. The threshold current density and slope efficiency of the device are 180 A/cm^2 and 1.3 W/A, respectively. The internal loss and the internal quantum efficiency are 1.7 cm^-1 and 93%, respectively. The 70% maximum power conversion efficiency is achieved with narrow far-field patterns.
基金Project supported by the National Defense Advanced Research Project,China(Grant No.315 xxxxx301)National Defense Innovation Program,China(Grant No.48xx4)+2 种基金the National Key Technologies Research and Development Program of China(Grant No.2018YFA03xxx01)the Scientific Instrument Developing Project of the Chinese Academy of Sciences(Grant No.YJKYYQ2017xxx2)the National Natural Science Foundation of China(Grant No.6150xxx6)
文摘The growth of the InAs film directly on the Si substrate deflected from the plane(100) at 4° towards(110) has been performed using a two-step procedure. The effect of the growth and annealing temperature on the electron mobility and surface topography has been investigated for a set of samples. The results show that the highest electron mobility is4640 cm^2/V·s in the sample, in which the 10-nm InAs nucleation layer is grown at a low temperature of 320 ℃ followed by ramping up to 560 ℃, and the nucleation layer was annealed for 15 min and the second layer of InAs is grown at 520 ℃.The influence of different buffer layers on the electron mobility of the samples has also been investigated, which shows that the highest electron mobility of 9222 cm^2/V·s at 300 K is obtained in the sample grown on a thick and linearly graded InGaAlAs metamorphic buffer layer deposited at 420 ℃.
基金Project supported by the National Natural Science Foundation of China （Grant No 10374085）. Acknowledgment The authors would like to thank the members of the nano-opotoelectronics laboratory for helpful discussion.
文摘Usually GaAs/AlGaAs is utilized as an active layer material in laser diodes operating in the spectral range of 800- 850 nm. In this work, in addition to a traditional unstrained GaAs/AlGaAs distributed feedback （DFB） laser diode, a compressively strained InGaAlAs/AlGaAs DFB laser diode is numerically investigated in characteristic. The simulation results show that the compressively strained DFB laser diode has a lower transparency carrier density, higher gain, lower Auger recombination rate, and higher stimulated recombination rate, which lead to better a device performance, than the traditional unstrained GaAs/AlGaAs DFB laser diode.
